onsemi-BCP53-16T1G

Part #onsemi-BCP53-16T1G
Download 
onsemi-BCP53-16T1G
BCP53 Series  
PNP Silicon  
Epitaxial
T
r
ansistors  
This PNP Silicon Epitaxial transistor is designed for use in audio  
amplifier applications. The device is housed in the SOT−223 package  
which is designed for medium power surface mount applications.  
•
High Current  
•
NPN Complement is BCP56  
•
The SOT−223 Package can be soldered using wave or reflow.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die  
MEDIUM POWER HIGH  
CURRENT SURFACE MOUNT  
PNP TRANSISTORS  
COLLECTOR 2, 4  
•
Device Marking:  
BCP53T1G = AH  
BCP53−10T1G = AH−10  
BCP53−16T1G = AH−16  
1
BASE  
•
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
EMITTER 3  
MARKING DIAGRAM  
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
4
Compliant  
1
AYW  
XXXXX
G  
G
2
3
SOT−223  
CASE 318E  
STYLE 1  
MAXIMUM RATINGS
(T =
 
25
°
C unless otherwise noted)  
C
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
−80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
V
CEO  
A
Y
W
= Assembly Location  
=
Y
e
ar  
= Work Week  
V
CBO  
V
EBO  
−100  
−5.0  
1.5  
XXXXX =
 
Specific Device Code  
G
= Pb−Free Package  
I
C
(Note: Microdot may be in either location)  
T
o
tal Power Dissipation  
P
D
@ T
 
= 25
°

1.5  
12  
W
mW/
°
C  
A
ORDERING INFORMATION  
Derate above 25
°
C  
†
Device  
Package  
Shipping  
Operating and Storage  
T
e
mperature Range  
T , T  
−65 to +150  
°
C  
J
stg  
BCP53T1G  
SOT−223 1000/
T
a
pe
 
& Reel  
(Pb−Free)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Device
 
mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.  
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.  
SBCP53−10T1G  
BCP53−10T1G  
SBCP53−10T1G  
BCP53−16T1G  
SBCP53−16T1G  
BCP53−16T3G  
SOT−223 1000/
T
a
pe
 
& Reel  
(Pb−Free)  
SOT−223 1000/
T
a
pe
 
& Reel  
(Pb−Free)  
SOT−223 1000/
T
a
pe
 
& Reel  
(Pb−Free)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
SOT−223 1000/
T
a
pe
 
& Reel  
(Pb−Free)  
Thermal Resistance, Junction−to−Ambient  
(Surface Mounted)  
R
83.3  
°
C/W  
q
JA  
SOT−223 1000/
T
a
pe
 
& Reel  
(Pb−Free)  
Lead
T
e
mperature for Soldering,  
0.0625
″
from case  
Time in Solder Bath  
T
L
260  
10  
°
C  
s
SOT−223 4000/
T
a
pe
 
& Reel  
(Pb−Free)  
NSVBCP53−16T3G SOT−223
 
4000/
T
a
pe & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
December, 2015 − Rev. 12  
BCP53T1/D  
 

BCP53 Series  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristics  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Base Breakdown Voltage  
(I =
 
−100
m
Adc, I
 
= 0)  
V
Vdc  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)CER  
(BR)EBO  
−100  
−
8
0  
−100  
−
5
.0  
−
−
−
−
−
−
−
−
−
C
E
Collector−Emitter Breakdown Voltage  
(I =
 
−1.0 mAdc, I
 
= 0)  
V
V
V
C
B
Collector−Emitter Breakdown Voltage  
(I =
 
−100
m
Adc, R
 
= 1.0 k
W
)  
Vdc  
−
C
BE  
Emitter−Base Breakdown Voltage  
(I =
 
−10
m
Adc, I
 
= 0)  
Vdc  
−
E
C
Collector−Base Cutoff Current  
(V =
 
−
3
0 Vdc, I
 
= 0)  
I
nAdc  
m
Adc  
CBO  
−100  
−10  
CB  
E
Emitter−Base Cutoff Current  
(V =
 
−
5
.0 Vdc, I
 
= 0)  
I
EBO  
−
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I =
 
−
5
.0 mAdc, V
 
=
−
2
.0 Vdc)  
C
CE  
All Part Types  
(I =
 
−150 mAdc, V
 
=
−
2
.0 Vdc)  
25  
−
−
C
CE  
BCP53, SBCP53  
BCP53−10, SBCP53−10  
BCP53−16, SBCP53−16, NSVBCP53−16  
40  
63  
100  
−
−
−
250  
160  
250  
(I =
 
−
5
00 mAdc, V
 
=
−
2
.0 Vdc)  
All Part Types  
C
CE  
25  
−
−
−
−
−
Collector−Emitter Saturation Voltage  
V
Vdc  
Vdc  
CE(sat)  
(I =
 
−
5
00 mAdc, I
 
=
−
5
0 mAdc)  
−
0
.5  
−1.0  
C
B
Base−Emitter On Voltage  
(I =
 
−
5
00 mAdc, V
 
=
−
2
.0 Vdc)  
V
BE(on)  
−
C
CE  
DYNAMIC CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
T
MHz  
(I =
 
−10 mAdc, V
 
=
−
5
.0 Vdc, f = 35 MHz)  
−
50  
−
C
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2

BCP53 Series  
TYPICAL CHARACTERISTICS  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
180  
IC/IB = 10  
BCP53, −10, −16  
150
°
C, 5 V  
150
°
C, 2 V  
+150
°
C  
160  
140  
120  
100  
80  
−55
°
C  
+25
°
C  
25
°
C, 5 V  
25
°
C, 2 V  
−55
°
C, 5 V  
−55
°
C, 2 V  
60  
0.4  
40  
0.2  
0
20  
0
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
10  
10  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 1. Collector Emitter Saturation Voltage  
vs. Collector Current  
Figure 2. DC Current Gain vs. Collector  
Current (BCP53)  
180  
300  
250  
200  
150  
100  
150
°
C, 5 V  
150
°
C, 2 V  
150
°
C, 5 V  
150
°
C, 2 V  
160  
140  
120  
100  
80  
25
°
C, 5 V  
25
°
C, 2 V  
25
°
C, 5 V  
25
°
C, 2 V  
−55
°
C, 5 V  
−55
°
C, 2 V  
−55
°
C, 5 V  
−55
°
C, 2 V  
60  
40  
50  
0
20  
0
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 3. DC Current Gain vs. Collector  
Current (BCP53−10)  
Figure 4. DC Current Gain vs. Collector  
Current (BCP53−16)  
1.2  
1.2  
1.1  
1.0  
0.9  
IC/IB = 10  
BCP53, −10  
IC/IB = 10  
BCP53 −16  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
−55
°
C  
−55
°
C  
0.8  
0.7  
0.6  
+25
°
C  
+25
°
C  
0.5  
0.4  
0.5  
0.4  
+150
°
C  
+150
°
C  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 5. BCP53, −10 Base Emitter Saturation  
Voltage vs. Collector Current  
Figure 6. BCP53−16 Base Emitter Saturation  
Voltage vs. Collector Current  
3

BCP53 Series  
TYPICAL CHARACTERISTICS  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
1.2  
BCP53, −10  
Vce = 2 V  
BCP53 −16  
Vce = 2 V  
1.1  
1.0  
0.9  
−55
°
C  
0.8  
−55
°
C  
0.7  
+25
°
C  
0.6  
0.5  
+25
°
C  
+150
°
C  
0.4  
0.4  
0.3  
0.3  
0.2  
+150
°
C  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
I ,
 
COLLECTOR CURRENT (A)  
C
I ,
 
COLLECTOR CURRENT (A)  
C
Figure 7. BCP53, −10 Base Emitter Turn−On  
Voltage vs. Collector Current V

BE(on)  

Figure 8. BCP53−16 Base Emitter Turn−On  
Voltage vs. Collector Current  
1.0  
110  
100  
BCP53, −10, −16  
IC = 1.0 A  
IC = 1.5 A  
BCP53−10  
BCP53  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
IC = 500 mA  
90  
80  
70  
60  
IC = 100 mA  
BCP53−16  
50  
40  
0.1  
0
0.001  
0.01  
0.1  
1
0
1
2
3
4
5
I ,
 
BASE CURRENT (A)  
b
VOLTAGE (V)  
Figure 9. BCP53, −10, −16 Saturation Region  
Figure 10. Input Capacitance  
25  
20  
10  
1
100 ms  
1 s  
10 ms  
1 ms  
BCP53−10  
15  
10  
BCP53  
CONTINUOUS THERMAL LIMIT  
0.1  
BCP53−16  
5
0
SINGLE PULSE TEST AT T  
= 25
°
C  
amb  
0.01  
0
2
4
6
8
10 12 14 16 18 20  
0.1  
1
10  
100  
VOLTAGE (V)  
Vce, COLLECTOR EMITTER VOLTAGE (V)  
Figure 11. Output Capacitance  
Figure 12. Standard Operating Area  
4

BCP53 Series  
PACKAGE DIMENSIONS  
SOT−223 (TO−261)  
CASE 318E−04  
ISSUE N  
D
b1  
NOTES:  
ꢀꢁ1. DIMENSIONING
 
AND TOLERANCING PER ASME Y14.5M,  
1994.  
ꢀꢁ2. CONTROLLING
 
DIMENSION: INCH.  
MILLIMETERS  
INCHES  
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
0.20  
1.50  
6.70  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
−−−  
1.75  
7.00  
−
MAX  
MIN  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
−−−  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
−−−  
H
E
E
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
−−−  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.008  
0.060  
0.264  
1
3
b
e1  
e
2.00  
7.30  
0.069  
0.276  
−
0.078  
0.287  
1
0
°  
C
q
H
E
q
A
0
°  
1
0
°  
0
°  
0.08 (0003)  
STYLE 1:  
A1  
L
PIN 1.
 
BASE  
2. COLLECTOR  
3. EMITTER  
L1  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
ON Semiconductor
and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
 
SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

. SCILLC  
reserves the right to make changes without further notice to any products herein.
 
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages.
 
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time.
 
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
 
SCILLC  
does not convey any license under its patent rights nor the rights of others.
 
SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur.
 
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part.
 
SCILLC is an Equal Opportunity/Affirmative Action Employer.
 
This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMEN
T
:  
N. American Technical Support
: 800−282−9855
T
o
ll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website
:

Literature Distribution Center for ON Semiconductor  
P
.
O. Box 5163, Denver, Colorado 80217 USA  
Phone
: 303−675−2175 or 800−344−3860
T
o
ll Free USA/Canada  
Fax
: 303−675−2176 or 800−344−3867
T
o
ll Free USA/Canada  
Email
: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BCP53T1/D