onsemi-BCP56-16T3G

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Is Now  

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” or its affiliates and/or  

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products, including compliance with all laws,  

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onsemi

. “

T

ypical” parameters which may be provided in

onsemi

data sheets and/  

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  

by customer’s technical experts.

onsemi

does not convey any license under any of its intellectual property rights nor the rights of others.

onsemi

products are not designed, intended, or authorized  

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d

onsemi

and its officers, employees,  

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associated with such unintended or unauthorized use, even if such claim alleges that

onsemi

was negligent regarding the design or manufacture of the part.

 

onsemi

is an Equal Opportunity/Affirmative  

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  

BCP56 Series  

NPN Silicon  

Epitaxial

T

r

ansistor  

These NPN Silicon Epitaxial transistors are designed for use in  

audio amplifier applications. The device is housed in the SOT−223  

package, which is designed for medium power surface mount  

applications.  

Features  

MEDIUM POWER NPN SILICON  

HIGH CURRENT TRANSISTOR  

SURFACE MOUNT  

•

High Current: 1.0 A  

•

The SOT−223 package can be soldered using wave or reflow. The  

formed leads absorb thermal stress during soldering, eliminating the  

possibility of damage to the die  

•

Available in 12 mm Tape and Reel  

COLLECTOR 2,4  

Use BCP56T1G to Order the 7 inch/1000 Unit Reel  

Use BCP56T3G to Order the 13 inch/4000 Unit Reel  

•

PNP Complement is BCP53T1G  

BASE  

1

•

S and NSV Prefix for Automotive and Other Applications Requiring  

Unique Site and Control Change Requirements; AEC−Q101  

Qualified and PPAP Capable  

EMITTER 3  

4

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  

Compliant  

1

2

3

MAXIMUM RATINGS

(T =

 

25

°

C unless otherwise noted)  

C

Rating  

Symbol  

Value  

80  

100  

5

Unit  

Vdc  

Vdc  

Vdc  

Adc  

Adc  

SOT−223  

CASE 318E  

STYLE 1  

Collector−Emitter Voltage  

Collector−Base Voltage  

Emitter−Base Voltage  

Collector Current  

V

CEO  

V

CBO  

V

EBO  

MARKING DIAGRAM  

I

C

1

Collector Current − Peak (Note 1)  

I

2

CM  

AYW  

XXXXX

G  

G

T

o

tal Power Dissipation  

@ T

 

= 25

°

C (Note 2)  

Derate above 25

°

C  

P

D

1.5  

12  

W

mW/

°

C  

A

1

Operating and Storage  

T

e

mperature Range  

T , T  

−

6

5 to 150  

°

C  

XXXXX =

 

Specific Device Code  

J

stg  

A

Y

W

G

= Assembly Location  

=

Y

e

ar  

= Work Week  

THERMAL CHARACTERISTICS  

Characteristic  

= Pb−Free Package  

Symbol  

Max  

Unit  

(Note: Microdot may be in either location)  

Thermal Resistance,  

Junction−to−Ambient  

(surface mounted)  

R

83.3  

°

C/W  

q

JA  

ORDERING INFORMATION  

See detailed ordering, marking and shipping information in the  

package dimensions section on page 5 of this data sheet.  

Maximum

T

e

mperature for  

Soldering Purposes  

Time in Solder Bath  

T

L

260  

10  

°

C  

Sec  

Stresses exceeding those listed in the Maximum Ratings table may damage the  

device. If any of these limits are exceeded, device functionality should not be  

assumed, damage may occur and reliability may be affected.  

1. Reference

 

SOA curve.  

2. Device

 

mounted on a FR−4 glass epoxy printed circuit board 1.575 in x  

1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.  

©

Semiconductor Components Industries, LLC, 2016  

1

Publication Order Number:  

March, 2018 − Rev. 14  

BCP56T1/D  

BCP56 Series  

ELECTRICAL CHARACTERISTICS

(T =

 

25

°

C unless otherwise noted)  

A

Characteristics  

OFF CHARACTERISTICS  

Symbol  

Min  

Typ  

Max  

Unit  

Collector−Base Breakdown Voltage  

V

100  

80  

5.0  

−

−

−

−

−

−

−

−

Vdc  

Vdc  

(BR)CBO  

(BR)CEO  

(BR)EBO  

(I =

 

100

m

Adc, I

 

= 0)  

C

E

Collector−Emitter Breakdown Voltage  

(I =

 

1.0 mAdc, I

 

= 0)  

V

V

C

B

Emitter−Base Breakdown Voltage  

(I =

 

10

m

Adc, I

 

= 0)  

−

Vdc  

E

C

Collector−Base Cutoff Current  

(V =

 

30 Vdc, I

 

= 0)  

I

100  

10  

nAdc  

m

Adc  

CBO  

CB  

E

Emitter−Base Cutoff Current  

(V =

 

5.0 Vdc, I

 

= 0)  

I

−

EBO  

EB  

C

ON CHARACTERISTICS

(Note 3)  

DC Current Gain  

h

FE  

−

(I =

 

5.0 mA, V

 

= 2.0 V)  

All Part Types  

BCP56  

25  

40  

63  

100  

25  

−

−

−

−

−

−

C

CE  

(I =

 

150 mA, V

 

= 2.0 V)  

250  

160  

250  

−

C

CE  

BCP56−10  

BCP56−16  

All Types  

(I =

 

500 mA, V

 

= 2.0 V)  

C

CE  

Collector−Emitter Saturation Voltage  

(I =

 

500 mAdc, I

 

= 50 mAdc)  

V

−

−

0.5  

Vdc  

Vdc  

CE(sat)  

C

B

Base−Emitter On Voltage  

(I =

 

500 mAdc, V

 

= 2.0 Vdc)  

V

BE(on)  

−

−

1.0  

C

CE  

SWITCHING CHARACTERISTICS  

Rise Time  

t

−

−

−

−

14  

9

−

−

−

−

ns  

ns  

ns  

ns  

r

(V =

 

30 Vdc, I

 

= 150 mA, I

 

= 15 mA)  

CC  

C

B1  

Delay Time  

(V =

 

30 Vdc, I

 

= 150 mA, I

 

= 15 mA)  

CC  

t

d

C

B1  

Storage Time  

t

s

714  

58  

(V =

 

30 Vdc, I

 

= 150 mA, I

 

= 15 mA, I

 

= 15 mA)  

CC  

C

B1  

B2  

Fall Time  

t

f

(V =

 

30 Vdc, I

 

= 150 mA, I

 

= 15 mA, I

 

= 15 mA)  

CC  

C

B1  

B2  

DYNAMIC CHARACTERISTICS  

Current−Gain − Bandwidth Product  

f

T

−

130  

−

MHz  

(I =

 

10 mAdc, V

 

= 5.0 Vdc, f = 35 MHz)  

C

CE  

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  

performance may not be indicated by the Electrical Characteristics if operated under different conditions.  

3. Pulse

 

T

e

st: Pulse Width

≤

300

m

s, Duty Cycle

≤

2.0%  

2

BCP56 Series  

TYPICAL ELECTRICAL CHARACTERISTICS  

1000  

V

CE  

= 2 V  

T =

 

150

°

C  

A

125

°

C  

25

°

C  

100  

–

5

5

°

C  

–

6

5

°

C  

10  

0.1  

1

10  

100  

1000  

I ,

 

COLLECTOR CURRENT (mA)  

C

Figure 1. DC Current Gain  

1000  

100  

10  

80  

60  

T =

 

25

°

C  

J

40  

20  

C

ibo  

10  

8.0  

6.0  

C

obo  

4.0  

0.1  

1.0  

10  

100  

1000  

0.2  

0.5 1.0 2.0  

5.0 10  

20  

50 100  

I ,

 

COLLECTOR CURRENT (mA)  

C

V ,

 

REVERSE VOLTAGE (VOLTS)  

R

Figure 2. Current−Gain − Bandwidth Product  

Figure 3. Capacitance  

1

1.2  

I /I

 

= 10  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

I /I

 

= 10  

C

B

C

B

150

°

C  

25

°

C  

−55

°

C  

25

°

C  

−55

°

C  

0.1  

150

°

C  

0.3  

0.2  

0.01  

0.001  

0.01  

0.1  

1

0.001  

0.01  

0.1  

1

I ,

 

COLLECTOR CURRENT (A)  

C

I ,

 

COLLECTOR CURRENT (A)  

C

Figure 4. Collector Emitter Saturation Voltage  

vs. Collector Current  

Figure 5. Base Emitter Saturation Voltage vs.  

Collector Current  

3

BCP56 Series  

TYPICAL ELECTRICAL CHARACTERISTICS  

1.0  

0.8  

1.2  

1.1  

1.0  

0.9  

T =

 

25

°

C  

V

= 2 V  

J

CE  

−55

°

C  

25

°

C  

50  

mA  

I =

 

10ꢁmA  

C

100ꢁmA  

250ꢁmA  

500ꢁmA  

0.6  

0.4  

0.8  

0.7  

0.6  

0.5  

0.4  

150

°

C  

0.2  

0

0.3  

0.2  

0.05 0.1 0.2  

0.5  

1.0 2.0  

5.0  

10  

20  

50  

0.001  

0.01  

0.1  

1

I ,

 

BASE CURRENT (mA)  

B

I ,

 

COLLECTOR CURRENT (A)  

C

Figure 6. Base Emitter Voltage vs. Collector  

Current  

Figure 7. Collector Saturation Region  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

1

1 mS  

1 S  

100 mS  

10 mS  

0.1  

0.01  

0.1  

1

10  

100  

0

20  

40  

60  

80  

100  

120  

140  

160  

T ,

 

AMBIENT TEMPERATURE (

°

C)  

A

V

CE  

, COLLECTOR EMITTER VOLTAGE (V)  

Figure 8. Safe Operating Area  

Figure 9. Power Derating Curve  

4

BCP56 Series  

ORDERING INFORMATION  

Device  

†

Marking  

Package  

Shipping  

BCP56T1G  

BH  

SOT−223  

(Pb−Free)  

1000 /

T

a

pe & Reel  

4000 /

T

a

pe & Reel  

1000 /

T

a

pe & Reel  

4000 /

T

a

pe & Reel  

1000 /

T

a

pe & Reel  

4000 /

T

a

pe & Reel  

SBCP56T1G*  

BCP56T3G  

BH  

SOT−223  

(Pb−Free)  

SBCP56T3G*  

BCP56−10T1G  

SBCP56−10T1G*  

BCP56−10T3G  

NSVBCP56−10T3G*  

BCP56−16T1G  

SBCP56−16T1G*  

BCP56−16T3G  

SBCP56−16T3G*  

BH−10  

BH−10  

BH−16  

BH−16  

SOT−223  

(Pb−Free)  

SOT−223  

(Pb−Free)  

SOT−223  

(Pb−Free)  

SOT−223  

(Pb−Free)  

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our

T

a

pe and Reel Packaging  

Specifications Brochure, BRD8011/D.  

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and  

PPAP Capable.  

5

BCP56 Series  

PACKAGE DIMENSIONS  

SOT−223 (TO−261)  

CASE 318E−04  

ISSUE N  

D

b1  

NOTES:  

1. DIMENSIONING

 

AND TOLERANCING PER ASME Y14.5M, 1994.  

2. CONTROLLING

 

DIMENSION: INCH.  

MILLIMETERS  

INCHES  

NOM  

0.064  

0.002  

0.030  

0.121  

0.012  

0.256  

0.138  

0.091  

0.037  

−−−  

4

2

DIM  

A

A1  

b

b1  

c

D

E

e

e1  

L

L1  

MIN  

1.50  

0.02  

0.60  

2.90  

0.24  

6.30  

3.30  

2.20  

0.85  

0.20  

1.50  

6.70  

NOM  

1.63  

0.06  

0.75  

3.06  

0.29  

6.50  

3.50  

2.30  

0.94  

−−−  

1.75  

7.00  

−

MAX  

MIN  

MAX  

0.068  

0.004  

0.035  

0.126  

0.014  

0.263  

0.145  

0.094  

0.041  

−−−  

H

E

E

1.75  

0.10  

0.89  

3.20  

0.35  

6.70  

3.70  

2.40  

1.05  

−−−  

0.060  

0.001  

0.024  

0.115  

0.009  

0.249  

0.130  

0.087  

0.033  

0.008  

0.060  

0.264  

1

3

b

e1  

e

2.00  

7.30  

0.069  

0.276  

−

0.078  

0.287  

1

0

°  

C

q

H

E

A

q

0

°  

1

0

°  

0

°  

0.08 (0003)  

STYLE 1:  

A1  

PIN 1.

 

BASE  

2. COLLECTOR  

3. EMITTER  

L

L1  

4. COLLECTOR  

SOLDERING FOOTPRINT*  

3.8  

0.15  

2.0  

0.079  

6.3  

0.248  

2.3  

0.091  

2.3  

0.091  

2.0  

0.079  

mm  

inches  

1.5  

0.059  

ǒ

Ǔ

SCALE 6:1  

*For additional information on our Pb−Free strategy and soldering  

details, please download the ON Semiconductor Soldering and  

Mounting

T

e

chniques Reference Manual, SOLDERRM/D.  

ON Semiconductor and  

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  

coverage may be accessed at

. ON Semiconductor reserves the right to make changes without further notice to any products herein.  

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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T

:  

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◊

BCP56T1/D  

6