onsemi-BCW32LT1G
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BCW32LT1G
General Purpose
Transistors
NPN Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
32
Unit
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
V
V
CEO
32
Vdc
CBO
EBO
5.0
Vdc
3
Collector Current − Continuous
I
C
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
2
SOT−23 (TO−236)
CASE 318
THERMAL CHARACTERISTICS
STYLE 6
Characteristic
Symbol
Value
Unit
T
o
tal Device Dissipation
FR-5 Board
P
D
mW
MARKING DIAGRAM
(1)
225
T =
25
°
C
Derate above 25
°
C
A
1.8
mW/
°
C
°
C/W
D2 M
G
Thermal Resistance,
Junction−to−Ambient
R
556
G
q
JA
1
T
o
tal Device Dissipation
Alumina Substrate,
T =
25
°
C
Derate above 25
°
C
P
300
mW
D
D2 =
Device Code
(2)
A
M
= Date Code*
2.4
mW/
°
C
°
C/W
G
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Junction and Storage
T
e
mperature
T , T
J
−55 to +150
°
C
stg
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
BCW32LT1G
SOT−23 3000
/
T
a
pe & Reel
(Pb−Free)
NSVBCW32LT1G
SOT−23 3000
/
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
November, 2016 − Rev. 4
BCW32LT1/D
BCW32LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collecto
r
−
E
mitter Breakdown Voltage
V
32
32
−
−
−
−
−
−
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I =
2.0 mAdc, V
= 0)
C
EB
Collecto
r
−
B
ase Breakdown Voltage
(I =
10
m
Adc, I
= 0)
V
V
C
E
Emitte
r
−
B
ase Breakdown Voltage
(I =
10
m
Adc, I
= 0)
5.0
E
C
Collector Cutoff Current
(V =
32 Vdc, I
= 0)
I
CBO
−
−
−
−
100
10
nAdc
m
Adc
CB
E
(V =
32 Vdc, I
= 0, T
= 100
°
C)
CB
E
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
2.0 mAdc, V
= 5.0 Vdc)
200
−
−
−
−
450
0.25
0.70
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
10 mAdc, I
= 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
Bas
e
−
E
mitter On Voltage
(I =
2.0 mAdc, V
= 5.0 Vdc)
V
BE(on)
0.55
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Output Capacitance
C
−
−
−
−
4.0
10
pF
dB
obo
(I =
0, V
= 10 Vdc, f = 1.0 MHz)
E
CB
Noise Figure
(I =
0.2 mAdc, V
= 5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
NF
C
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
20
10
100
50
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
≈ ∞
BANDWIDTH = 1.0 Hz
= 0
I
C
= 1.0 mA
R
S
S
20
300
m
A
300
m
A
100
m
A
10
5.0
7.0
5.0
100
m
A
2.0
1.0
10
m
A
30
m
A
0.5
0.2
0.1
30
m
A
3.0
2.0
10
m
A
10 20
50 100 200
500 1ꢀk
2ꢀk
5ꢀk 10ꢀk
10
20
50 100 200
500 1ꢀk
2ꢀk
5ꢀk 10ꢀk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
2
BCW32LT1G
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C)
500ꢀk
1ꢀM
500ꢀk
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200ꢀk
100ꢀk
50ꢀk
200ꢀk
100ꢀk
50ꢀk
20ꢀk
20ꢀk
10ꢀk
10ꢀk
5ꢀk
2.0 dB
1.0 dB
5ꢀk
2ꢀk
1ꢀk
3.0 dB
4.0 dB
2.0 dB
2ꢀk
1ꢀk
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300
500 700
1ꢀk
10
20 30
50 70 100
200 300
500 700
1ꢀk
I ,
COLLECTOR CURRENT (
m
A)
C
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
500ꢀk
10 Hz to 15.7 kHz
200ꢀk
100ꢀk
50ꢀk
Noise Figure is defined as:
2
20ꢀk
2
R
n S
2
1
ń
2
e
n
)
4KTR
)
I
S
10ꢀk
5ꢀk
10
ǒ
Ǔ
NF
+
20 log
4KTR
S
1.0 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
2ꢀk
1ꢀk
2.0 dB
I
= Noise Current of the Transistor referred to the input.
3.0 dB
(Figure 4)
n
500
−23
K
= Boltzman’s Constant (1.38 x 10
j/
°
K)
5.0 dB
8.0 dB
T
R
=
T
e
mperature of the Source Resistance (
°
K)
= Source Resistance (
W
)
200
100
50
S
20 30
50 70 100
200 300
500 700
1ꢀk
10
I ,
COLLECTOR CURRENT (
m
A)
C
Figure 5. Wideband
3
BCW32LT1G
TYPICAL STATIC CHARACTERISTICS
400
200
T =
125
°
C
J
25
°
C
-ꢁ55
°
C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.004 0.006 0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1.0
3.0
2.0
5.0 7.0 10
20
30
50 70
100
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. DC Current Gain
1.0
100
T =
25
°
C
A
T =
25
°
C
J
I
B
= 500
m
A
400
m
A
PULSE WIDTH = 300
m
s
DUTY CYCLE
≤
2.0%
0.8
0.6
0.4
0.2
0
80
60
300
m
A
200
m
A
I
C
= 1.0 mA
10 mA
50 mA
100 mA
40
20
0
100
m
A
0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
0
5.0
10
15
20
25
30
35
40
I ,
BASE CURRENT (mA)
B
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I
/I
≤
h /2
C
B
FE
T =
25
°
C
J
25
°
C to 125
°
C
–
5
5
°
C to 25
°
C
1.0
0.8
0.6
0.4
*
q
for V
VC
CE(sat)
V
@ I
/I =
10
C B
BE(sat)
-ꢁ0.8
-ꢁ1.6
-ꢁ2.4
V
BE(on)
@ V
= 1.0 V
CE
25
°
C to 125
°
C
–
5
5
°
C to 25
°
C
0.2
0
q
for V
BE
VB
V
@ I
/I =
10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0 10 20
50 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
4
BCW32LT1G
TYPICAL DYNAMIC CHARACTERISTICS
10
7.0
5.0
T =
25
°
C
J
f = 1.0 MHz
C
ib
C
ob
3.0
2.0
1.0
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
50
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 11. Capacitance
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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