onsemi-BCW68GLT1
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BCW68GL
General Purpose
T
r
ansistor
PNP Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and P
P
A
P Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
MAXIMUM RATINGS
EMITTER
Rating
Symbol
Value
−45
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
V
CEO
−60
Vdc
3
CBO
SOT−23
V
EBO
−5.0
−800
Vdc
CASE 318
STYLE 6
1
Collector Current − Continuous
I
C
mAdc
2
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
DG M
G
G
T
o
tal Device Dissipation FR−5 Board
P
D
225
mW
A
Derate above 25
°
C
1.8
mW/
°
C
°
C/W
DG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556
T
o
tal Device Dissipation
T =
25
°
C
Derate above 25
°
C
P
D
300
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
dependin
g
u
pon manufacturing location.
A
2.4
mW/
°
C
°
C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417
ORDERING INFORMATION
†
Junction and Storage
T
e
mperature
T , T
−55 to +150
°
C
Device
Package
Shipping
J
stg
1. FR−5
= 1.0
0.75
0.062 in.
BCW68G
L
T
1G,
NSVBCW68G
L
T
1G
SOT−23
(Pb−Free)
3000 /
T
a
pe &
Reel
2. Alumina
= 0.4
0.3
0.024 in 99.5% alumina.
BCW68G
L
T
3G
SOT−23
(Pb−Free)
10000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
Novembe
r
,
2
016 − Rev. 8
BCW68G
L
T
1/D
BCW68GL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
V
−45
−60
−5.0
−
−
−
−
−
−
Vdc
Vdc
Vdc
(BR)CEO
(I =
−10 mAdc, I
= 0)
C
B
Collector−Emitter Breakdown Voltage
(I =
−10
m
Adc, V
= 0)
V
(BR)CES
(BR)EBO
C
EB
Emitter−Base Breakdown Voltage
(I =
−10
m
Adc, I
= 0)
V
E
C
Collector Cutoff Current
(V =
−45 Vdc, I
= 0)
I
CES
−
−
−
−
−20
−10
nAdc
m
Adc
CE
E
(V =
−45 Vdc, I
= 0, T
= 150
°
C)
CE
B
A
Emitter Cutoff Current (V
= −4.0 Vdc, I
= 0)
I
−
−
−20
nAdc
−
EB
C
EBO
ON CHARACTERISTICS
DC Current Gain
h
FE
(I =
−10 mAdc, V
= −1.0 Vdc)
120
160
60
−
−
−
400
−
−
C
CE
(I =
−100 mAdc, V
= −1.0 Vdc)
C
CE
(I =
−300 mAdc, V
= −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
−500 mAdc, I
= −50 mAdc)
V
−
−
−0.7
−2.0
Vdc
Vdc
CE(sat)
C
B
Base−Emitter Saturation Voltage
(I =
−500 mAdc, I
= −50 mAdc)
V
BE(sat)
−
−
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
−
−
MHz
pF
T
(I =
−20 mAdc, V
= −10 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
obo
18
(V =
−10 Vdc, I
= 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
−
105
10
pF
(V =
−0.5 Vdc, I
= 0, f = 1.0 MHz)
EB
C
Noise Figure
N
−
dB
F
(I =
−0.2 mAdc, V
= −5.0 Vdc, R
= 1.0 k
W
, f
= 1.0 kHz, BW = 200 Hz)
C
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performanc
e
m
ay not be indicated by the Electrical Characteristics if operated under different conditions.
2
BCW68GL
TYPICAL CHARACTERISTICS
500
400
300
200
1
150
°
C
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
25
°
C
25
°
C
−55
°
C
0.1
−55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
3
BCW68GL
TYPICAL CHARACTERISTICS
-1.0
-0.8
-0.6
-0.4
T =
25
°
C
J
I
=
C
-500 mA
I
= -300 mA
C
-0.2
0
I
= -100 mA
C
I
= -10 mA
C
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 6. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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