onsemi-BD13716STU
| Part # | onsemi-BD13716STU |
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BD135/137/139
Medium Power Linear and Switching
Applications
•
Complement to BD136, BD138 and BD140 respectively
TO-126
1. Emitter
2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
: BD135
: BD137
: BD139
45
60
80
V
V
V
CBO
V
: BD135
: BD137
: BD139
45
60
80
V
V
V
CEO
EBO
V
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
5
1.5
V
A
I
I
I
C
3.0
A
CP
B
0.5
A
P
Collector Dissipation (T
=25
°
C)
12.5
W
W
°
C
°
C
C
C
P
Collector Dissipation (T =25
°
C)
1.25
C
a
T
T
Junction
T
e
mperature
Storage
T
e
mperature
150
J
– 55 ~ 150
STG
Electrical Characteristics
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
V
(sus)
Collector-Emitter Sustaining Voltage
CEO
: BD135
: BD137
: BD139
I
= 30mA, I
= 0
45
60
80
V
V
V
C
B
I
Collector Cut-off Current
Emitter Cut-off Current
V
V
= 30
V
, I
= 0
0.1
10
µ
A
µ
A
CBO
CB
E
I
= 5
V
, I
= 0
C
EBO
EB
h
h
h
DC Current Gain
: ALL DEVICE
: ALL DEVICE
: BD135
V
V
V
= 2
V
, I
=
5
mA
25
25
40
40
FE1
CE
CE
CE
C
= 2
V
, I
=
0
.5A
FE2
FE3
C
= 2
V
, I
=
1
50mA
250
160
C
: BD137, BD139
V
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
I
= 500mA, I
= 50mA
0.5
1
V
V
CE
BE
C
B
(on)
V
= 2
V
, I
=
0
.5A
CE
C
h
Classification
FE
Classification
6
10
16
100 ~ 250
h
40 ~ 100
63 ~ 160
FE3
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
100
90
80
70
60
50
40
30
20
10
0
500
450
400
350
300
250
200
150
100
50
V
CE
= 2V
0
1E-3
10
100
1000
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I
C
MAX. (Pulsed)
10us
I
C
MAX. (Continuous)
100us
1
0.1
0.01
1
10
100
1E-3
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-126
8.00
±
0.30
3.25
±
0.20
ø3.20
±
0.10
(1.00)
(0.50)
0.75
±
0.10
1.75
±
0.20
1.60
±
0.10
0.75
±
0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28
±
0.20]
2.28TYP
[2.28
±
0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST
®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
