onsemi-BD13910STU

BD135 / 137 / 139  

NPN Epitaxial Silicon Transistor  

Features  

• Complement

 

to BD136, BD138 and BD140 respectively  

Applications  

•

Medium Power Linear and Switching  

TO-126  

1. Emitter

 

2.Collector 3.Base  

1

Ordering Information  

Part Number  

BD13516S  

Marking  

BD135-16  

BD135-6  

Package  

Packing Method  

Bulk  

BD1356STU  

BD13510STU  

BD13516STU  

BD13716STU  

BD13710STU  

BD13716S  

BD135-10  

BD135-16  

BD137-16  

BD137-10  

BD137-16  

BD139-16  

BD139-10  

BD139-16  

BD139-6  

Rail  

TO-126 3L  

Bulk  

Rail  

BD13916STU  

BD13910S  

Bulk  

Rail  

BD13916S  

BD1396STU  

BD13910STU  

BD139-10  

© 2007

Semiconductor Components Industries, LLC.  

November-2017,

Rev.

2  

Publication Order Number:  

BD139/D  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

C

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Value  

Units  

BD135  

BD137  

BD139  

BD135  

BD137  

BD139  

45  

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

60  

V

80  

45  

V

CEO  

60  

V

80  

5

V

EBO  

I

C  

I

CP  

I

B  

Emitter-Base Voltage  

Collector Current (DC)  

Collector Current (Pulse)  

Base Current  

V

A

1.5  

3.0  

A

0.5  

A

T

C

= 25

°

C  

T

A

= 25

°

C  

12.5  

1.25  

150  

W

W

°

C  

°

C  

P

C  

Device Dissipation  

T

J  

Junction

T

e

mperature  

Storage

T

e

mperature  

T

STG  

– 55 to +150  

Electrical Characteristics  

Values are at T

C

= 25

°

C unless otherwise noted.  

Symbol  

Parameter  

Test Condition  

Min.  

45  

Typ.  

Max.  

Units  

BD135  

Collector-Emitter Sustaining  

Voltage  

V

CEO

(sus)  

BD137 I

C

= 30 mA, I

B

= 0  

BD139  

60  

V

80  

I

CBO  

I

EBO  

Collector Cut-off Current  

Emitter Cut-off Current  

V

CB

= 30 V, I

E

= 0  

V

EB

= 5

V

, I

C

= 0  

0.1  

10  

μ

A  

μ

A  

h

FE1  

V

CE

= 2

V

,

I

C

= 5 mA  

V

CE

= 2

V

,

I

C

= 0.5 A  

V

CE

= 2

V

,

I

C

= 150 mA  

25  

25  

40  

h

FE2  

DC Current Gain  

h

FE3  

250  

0.5  

1

V

CE

(sat)  

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

I

C

= 500 mA, I

B

= 50 mA  

V

CE

= 2

V

,

I

C

= 0.5 A  

V

V

V

BE

(on)  

h

FE

Classification  

Classification  

6

10  

16  

h

FE3  

40 ~ 100  

63 ~ 160  

100 ~ 250  

2

Typical Performance Characteristics  

100  

500  

450  

400  

350  

300  

250  

200  

150  

100  

50  

V

CE

= 2V  

90  

80  

70  

60  

50  

40  

30  

20  

10  

0

0

1E-3  

0.01  

0.1  

1

10  

10  

100  

1000  

I

C

[A], COLLECTOR CURRENT  

I

C

[mA], COLLECTOR CURRENT  

Figure 1. DC current Gain  

Figure 2. Collector-Emitter Saturation Voltage  

10  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

I

C

MAX. (Pulsed)  

10us  

I

C

MAX. (Continuous)  

100us  

1

0.1  

0.01  

1

10  

100  

1E-3  

0.01  

0.1  

1

10  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 3. Base-Emitter Voltage  

Figure 4. Safe Operating Area  

20.0  

17.5  

15.0  

12.5  

10.0  

7.5  

5.0  

2.5  

0.0  

0

25  

50  

75  

100  

125  

150  

175  

T

C

[

o

C], CASE TEMPERATURE  

Figure 5. Power Derating  

3

Physical Dimensions  

TO-126 3L  

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Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)  

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