onsemi-BD237G
| Part # | onsemi-BD237G |
Download  | onsemi-BD237G |
BD237G (NPN),
BD234G,ꢀBD238G (PNP)
Plastic Medium Power
Bipolar
T
r
ansistors
Designed for use in 5.0 to 10
W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
•
High DC Current Gain
•
Epoxy Meets UL 94 V0 @ 0.125 in
•
These Devices are Pb−Free and are RoHS Compliant*
PNP
NPN
MAXIMUM RATINGS
COLLECTOR
2, 4
COLLECTOR
2, 4
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD234G
DB237G, BD238G
V
V
V
Vdc
CEO
CBO
EBO
45
80
3
3
BASE
BASE
Collector−Base Voltage
BD234G
DB237G, BD238G
Vdc
60
100
1
1
EMITTER
EMITTER
Emitter−Base Voltage
Collector Current
5.0
2.0
1.0
Vdc
Adc
Adc
W
I
C
Base Current
I
B
T
o
tal Device Dissipation
P
D
TO−225
CASE 77−09
STYLE 1
@ T
= 25
_
C
Operating and Storage Junction
T
e
mperature Range
25
C
T , T
–
5
5 to
+
1
50
_
C
J
stg
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
YWW
BD23xG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
5.0
_
C/W
q
JC
Y
=
Y
e
ar
WW
= Work Week
BD23x = Device Code
x = 4, 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON
Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 17
BD237/D
BD237G (NPN), BD234G, BD238G (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
V
Vdc
(BR)CEO
(I =
0.1 Adc, I
= 0)
BD237G, BD238G
BD234G
C
B
80
45
−
−
Collector Cutoff Current
I
mAdc
CBO
(V =
100 Vdc, I
= 0)
BD237G, BD238G
CB
E
−
−
0.1
0.1
(V =
60 Vdc, I
= 0)
CB
E
BD234G
Emitter Cutoff Current
I
mAdc
−
EBO
(V =
5.0 Vdc, I
= 0)
−
1.0
BE
C
DC Current Gain
(I =
0.15 A, V
= 2.0 V)
C
CE
h
FE1
h
FE2
40
25
−
−
(I =
1.0 A, V
= 2.0 V)
C
CE
(I =
1.0 Adc, I
= 0.1 Adc)
V
Vdc
Vdc
MHz
CE(sat)
−
−
0.6
1.3
−
C
B
(I =
1.0 Adc, V
= 2.0 Vdc)
V
BE(on)
C
CE
Current−Gain − Bandwidth Product
(I =
250 mAdc, V
= 10 Vdc, f = 1.0 MHz)
f
T
3.0
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
10
The Safe Operating Area Curves indicate I
V
limits
C− CE
100
m
s
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum T
,
power−temperature derating must be observed for both
steady state and pulse power conditions.
1 ms
3
1
5 ms
J
T =
150
°
C
J
dc
0.3
0.1
BD236
BD237
30
1
3
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
2
BD237G (NPN), BD234G, BD238G (PNP)
1.0
0.8
I =
0.1 A
C
0.25 A
0.5 A
1.0 A
0.6
0.4
0.2
T =
25
°
C
J
0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200
I ,
BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1000
700
1.5
V
CE
= 2.0 V
500
T =
25
°
C
J
1.2
0.9
0.6
0.3
0
300
200
T =
+ 150
°
C
J
100
70
V
@ I
/I =
10
C B
BE(sat)
T =
+ 25
°
C
J
50
V
BE
@ V
= 2.0 V
CE
30
20
T =
– 55
°
C
J
V
@ I
/I =
10
C B
CE(sat)
10
2.0 3.0
5.0 10
20 30
50 100 200
300 500
1000 2000
2.0 3.0
5.0 10
20 30
50 100 200
300 500
1000 2000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Current Gain
Figure 4. “On” Voltages
1.0
0.7
0.5
D = 0.5
D = 0.2
0.3
0.2
D = 0.1
SINGLE PULSE
q
q
q
(t) = r(t)
q
JC
P
(pk)
JC
JC
JC
D = 0.05
0.1
0.07
0.05
= 4.16
°
C/W MAX
= 3.5
°
C/W TYP
D = 0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
t
2
READ TIME AT t
1
T
– T
= P
q
(t)
C (pk)
JC
DUTY CYCLE, D = t
/t
1
J(pk)
2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500 1000
t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response
3
BD237G (NPN), BD234G, BD238G (PNP)
ORDERING INFORMATION
Device
Package
Shipping
BD234G
TO−225
(Pb−Free)
500 Units / Box
BD237G
BD238G
TO−225
(Pb−Free)
500 Units / Box
500 Units / Box
TO−225
(Pb−Free)
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
225
CASE 77
−
09
ISSUE AD
4
DATE 25 MAR 2015
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
Y
=
Y
e
ar
WW
= Work Week
XXXXX = Device Code
= Pb
−
Free Package
e
2X
c
G
b
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
FRONT VIEW
SIDE VIEW
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
STYLE 4:
STYLE 5:
PIN 1.
MT 1
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
PIN 1.
CATHODE
2., 4.
ANODE
3. GATE
PIN 1.
ANODE 1
2., 4.
ANODE 2
3. GATE
2., 4.
COLLECTOR
3. EMITTER
2., 4.
MT 2
3. GATE
STYLE 6:
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2., 4.
GATE
3. ANODE
PIN 1.
MT 1
2., 4.
GATE
3. MT
2
PIN 1.
SOURCE
2., 4.
GATE
3. DRAIN
PIN 1.
GATE
2., 4.
DRAIN
3. SOURCE
PIN 1.
SOURCE
2., 4.
DRAIN
3. GATE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO
−
225
PAGE 1 OF 1
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T
:
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−
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−
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T
o
ll Free USA/Canada
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