onsemi-BD242CG
| Part # | onsemi-BD242CG |
Download  | onsemi-BD242CG |
BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
Designed for use in general purpose amplifier and switching
applications.
POWER TRANSISTORS
COMPLEMENTARY
SILICON
Features
•
High Current Gain − Bandwidth Product
•
Compact TO−220 AB Package
3 AMP
80−100 VOLTS
40 WATTS
•
Epoxy Meets UL94 V−0 @ 0.125 in
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
COMPLEMENTARY
BD241C
BD242C
COLLECTOR 2,4
COLLECTOR 2,4
Rating
Symbol BD242B
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current −Continuous
Collector Current − Peak
Base Current
V
80
90
100
115
CEO
V
CES
1
1
BASE
BASE
V
EB
5.0
3.0
5.0
1.0
I
C
EMITTER 3
EMITTER 3
I
CM
I
B
MARKING
DIAGRAM
4
T
o
tal Device Dissipation
P
D
@ T
= 25
°
C
40
0.32
W
W/
°
C
C
Derate above 25
°
C
TO−220
CASE 221A
STYLE 1
Operating and Storage
Junction
T
e
mperature Range
T , T
–
6
5 to
+
1
50
°
C
J
stg
AYWW
BD24xxG
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BD24xx = Device
Code
xx = 1C, 2B, or 2C
= Assembly
Location
A
Y
WW
G
THERMAL CHARACTERISTICS
=
Y
e
ar
= Work
Week
= Pb−Free
Package
Characteristic
Symbol
Max
62.5
Unit
°
C/W
°
C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
R
3.125
q
ORDERING INFORMATION
†
Device
Package
Shipping
BD241CG
BD242BG
BD242CG
TO−220
(Pb−Free)
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
TO−220
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 10
BD241C/D
BD241C (NPN), BD242B (PNP), BD242C (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I =
30 mAdc, I
= 0)
V
CEO
Vdc
BD242B
80
C
B
BD241C, BD242C
100
Collector Cutoff Current
(V =
50 Vdc, I
= 0)
I
mAdc
m
Adc
mAdc
CEO
BD242B
BD241C, BD242C
0.3
200
1.0
CE
B
(V =
60 Vdc, I
= 0)
CE
B
Collector Cutoff Current
(V =
80 Vdc, V
= 0)
I
CES
BD242B
BD241C, BD242C
CE
EB
(V =
100 Vdc, V
= 0)
CE
EB
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
EBO
BE
C
ON CHARACTERISTICS
(Note 1)
DC Current Gain
h
FE
(I =
1.0 Adc, V
= 4.0 Vdc)
C
CE
25
10
(I =
3.0 Adc, V
= 4.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
3.0 Adc, I
= 0.6 Adc)
V
Vdc
Vdc
CE(sat)
1.2
1.8
C
B
Base−Emitter On Voltage
(I =
3.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
f
T
MHz
(I =
500 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
test
3.0
20
C
CE
Small−Signal Current Gain
(I =
0.5 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2. f =
|h |
•
f .
test
T
fe
40
30
20
10
0
0
20
40
60
80
100
120
140
160
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
2
BD241C (NPN), BD242B (PNP), BD242C (PNP)
2.0
V
CC
TURN‐ON PULSE
I /I
= 10
C B
R
L
1.0
0.7
0.5
APPROX
+ 11 V
T =
25
°
C
J
V
in
t @
V =
30 V
r CC
SCOPE
R
K
C ꢁ
%
ꢁC
jd
V
in
0
eb
0.3
t @
V =
10 V
r CC
V
EB(off)
t
1
– 4.0 V
t
3
APPROX
+ 11 V
t
v
7.0 ns
1
0.1
100
t
t
t
500
m
s
2
0.07
0.05
t @
V
d
= 2.0 V
BE(off)
t
t
15 ns
3
V
in
0.03
0.02
DUTY CYCLE
[
2.0%
t
2
0.03 0.05
0.07 0.1
0.3
0.5 0.7 1.0
3.0
APPROX – 9.0 V
TURN‐OFF PULSE
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Equivalent Circuit
Figure 3. Turn−On Time
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P
(pk)
Z
(t) = r(t) R
q
JC
q
JC
0.05
0.02
R
= 3.125
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.03
0.02
t
1
1
t
2
0.01
0.02
T
– T
= P
C
Z
q
(pk) JC(t)
J(pk)
SINGLE PULSE
DUTY CYCLE, D = t
/t
1 2
0.01
0.01
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0
k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
5.0
breakdown. Safe operating area curves indicate I
− V
C
CE
1.0 ms
100
m
s
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0 ms
2.0
1.0
0.5
The data of Figure 5 is based on T
= 150
°
C; T
is
J(pk)
C
SECOND BREAKDOWN
LIMITED @ T
v
150
°
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
J
THERMAL LIMITATION @ T
= 25
°
C
C
BONDING WIRE LIMITED
T
≤
150
°
C, T
may be calculated from the data in
J(pk)
J(pk)
CURVES APPLY BELOW
RATED V
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.2
0.1
CEO
BD241C, BD242C
5.0
10
20
50
100
I ,
COLLECTOR CURRENT (AMP)
C
Figure 5. Active Region Safe Operating Area
3
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3.0
2.0
300
I
= I
B1 B2
I /I
= 10
T =
+ 25
°
C
J
C B
t
′
s
200
t
s
= t
– 1/8 t
s f
′
1.0
0.7
0.5
T =
25
°
C
J
t @
V =
30 V
f CC
100
70
0.3
0.2
t @
V =
10 V
f CC
C
eb
0.1
50
0.07
0.05
C
cb
0.03
30
0.1
0.03 0.05
0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
40
I ,
COLLECTOR CURRENT (AMP)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn−Off Time
Figure 7. Capacitance
500
300
2.0
1.6
1.2
V
CE
= 2.0 V
T =
25
°
C
J
T =
150
°
C
J
25
°
C
-ꢂ55
°
C
100
70
I
C
= 0.3 A
1.0 A
3.0 A
50
0.8
30
10
0.4
0
7.0
5.0
0.03 0.05
0.07 0.1
0.3
0.5 0.7 1.0
3.0
1.0 2.0
5.0
10
20
50
100 200
500 1000
I ,
COLLECTOR CURRENT (AMP)
C
I ,
BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.4
1.2
+ꢂ2.5
+ꢂ2.0
T =
25
°
C
*APPLIES FOR I
/I
≤
5.0
T =
– 65
°
C TO + 150
°
C
J
J
C B
+ꢂ1.5
+ꢂ1.0
1.0
0.8
0.6
0.4
0.2
0
*
q
FOR V
VC
+ꢂ0.5
0
CE(sat)
V
@ I
/I =
10
C B
BE(sat)
-ꢂ0.5
-ꢂ1.0
-ꢂ1.5
-ꢂ2.0
V
BE
@ V
= 2.0 V
CE
q
FOR V
BE
V
@ I
/I =
10
C B
VB
CE(sat)
-ꢂ2.5
3.0
1.0 2.0
0.003 0.005
0.01 0.020.03
0.05
0.1 0.2
0.3 0.5
1.0 2.0
3.0
0.003 0.005
0.01 0.02
0.05 0.1
0.2 0.3
0.5
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
4
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3
2
1
7
10
10
10
10
V
CE
= 30 V
I
C
= 10 x I
CES
V
= 30 V
CE
6
10
T =
150
°
C
J
5
10
I
C
≈
I
CES
100
°
C
0
10
I
= 2 x I
CES
C
4
3
2
10
10
10
-1
10
REVERSE
25
°
C
FORWARD
-ꢂ2
(TYPICAL I
VALUES
CES
OBTAINED FROM FIGURE 12)
10
10
I
CES
-ꢂ3
-ꢂ0.4 -ꢂ0.3
-ꢂ0.2 -ꢂ0.1
0
+ꢂ0.1 +ꢂ0.2 +ꢂ0.3
+ꢂ0.4 +ꢂ0.5
+ꢂ0.6
20
40
60
80
100
120
140
160
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
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