onsemi-BD244BG
| Part # | onsemi-BD244BG |
Download  | onsemi-BD244BG |
BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
•
High Current Gain Bandwidth Product
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
65 WATTS
Rating
Symbol
Value
Unit
PNP
NPN
Collector−Emitter Voltage
BD243B, BD244B
V
CEO
Vdc
COLLECTOR 2, 4
COLLECTOR 2, 4
80
BD243C, BD244C
100
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
V
CB
Vdc
1
1
80
100
BASE
BASE
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
V
5.0
6
Vdc
Adc
Adc
Adc
EB
EMITTER 3
EMITTER 3
I
C
4
I
10
2.0
CM
I
B
TO−220
CASE 221A
STYLE 1
T
o
tal Device Dissipation
P
D
@ T
= 25
°
C
65
0.52
W
W/
°
C
C
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−65 to +150
°
C
J
stg
1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
BD24xy =
Device Code
x = 3 or 4
Characteristics
Symbol
Max
Unit
y = B or C
BD24xyG
AY WW
Thermal Resistance, Junction−to−Case
R
1.92
°
C/W
q
JC
A
Y
WW
G
=
=
=
=
Assembly Location
Y
e
ar
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD243BG
BD243CG
BD244BG
BD244CG
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
TO−220
(Pb−Free)
TO−220
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
TO−220
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 15
BD243B/D
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
V
Vdc
CEO(sus)
(I =
30 mAdc, I
= 0)
BD243B, BD244B
BD243C, BD244C
C
B
80
100
−
−
Collector Cutoff Current
I
mAdc
CEO
(V =
60 Vdc, I
= 0)
BD243B, BD243C, BD244B, BD244C
CE
B
−
0.7
Collector Cutoff Current
I
m
Adc
CES
(V =
80 Vdc, V
= 0)
CE
EB
BD243B, BD244B
(V =
100 Vdc, V
= 0)
−
−
400
400
CE
EB
BD243C, BD244C
Emitter Cutoff Current
I
mAdc
−
EBO
(V =
5.0 Vdc, I
= 0)
−
1.0
BE
C
ON CHARACTERISTICS
(Note 1)
DC Current Gain
h
FE
(I =
0.3 Adc, V
= 4.0 Vdc)
30
15
−
−
C
CE
(I =
3.0 Adc, V
= 4.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
6.0 Adc, I
= 1.0 Adc)
V
Vdc
Vdc
CE(sat)
−
−
1.5
2.0
C
B
Base−Emitter On Voltage
(I =
6.0 Adc, V
= 4.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
f
MHz
−
T
(I =
500 mAdc, V
= 10 Vdc, f
= 1.0 MHz)
3.0
20
−
−
C
CE
test
Small−Signal Current Gain
(I =
0.5 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulsewidth
≤
300
m
s, Duty Cycle
≤
2.0%.
2. f =
h
•
f
test
T
fe
80
60
40
20
0
0
20
40
60
80
100
120
140
160
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
2
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
2.0
V
CC
– 30 V
T =
25
°
C
J
1.0
V
CC
I /I
= 10
= 30 V
25
m
s
R
0.7
0.5
C
C B
+ 11 V
0
SCOPE
R
0.3
0.2
B
t
r
– 9.0 V
51
D
1
0.1
0.07
0.05
t , t
v
10 ns
r
f
DUTY CYCLE = 1.0%
t @
V
d
= 5.0 V
BE(off)
– 4 V
R
AND R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
0.03
0.02
D MUST
BE FAST RECOVERY TYPE eg.
1
ꢂ1N5825 USED ABOVE I
[
100 mA
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
B
ꢂMSD6100 USED BELOW I
[
100 mA
B
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
0.05
0.02
0.1
0.07
0.05
R
= 1.92
°
C/W
q
JC(max)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
SINGLE
PULSE
1
0.03
0.02
t
2
SINGLE PULSE
0.01
T
– T
= P
C
R
q
(pk) JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1 2
0.01
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
0.5 ms
5.0
3.0
2.0
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0
ms
T =
150
°
C
J
5.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
1.0
0.5
The data of Figure 5 is based on T
= 150
°
C: T
is
J(pk)
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
THERMAL LIMITATION @ T
= 25
°
C
C
J(pk)
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
≤
150
°
C, T
may be calculated from the data in Figure 4.
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
BD243B, BD244B
BD243C, BD244C
0.1
5.0
10
20
40
60
80
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
5.0
300
T =
25
°
C
T =
25
°
C
J
J
3.0
2.0
V
CC
I /I
= 10
= 30 V
200
t
s
C B
I =
I
B1 B2
1.0
C
ib
0.7
0.5
100
70
0.3
0.2
C
ob
t
f
50
0.1
0.07
0.05
30
0.5
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
1.0
2.0 3.0
5.0
10
20 30
50
I ,
COLLECTOR CURRENT (AMP)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Turn-Off Time
Figure 7. Capacitance
500
2.0
1.6
1.2
0.8
V
CE
= 2.0 V
T =
25
°
C
J
300
200
T =
150
°
C
J
I
C
= 1.0 A
2.5 A
5.0 A
100
70
25
°
C
50
30
20
-ꢃ55
°
C
0.4
0
10
7.0
5.0
0.06 0.1
0.2 0.3
0.4 0.6
1.0
2.0
4.0 6.0
10
20 30
50
100
200 300
500
1000
I ,
COLLECTOR CURRENT (AMP)
C
I ,
BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.6
1.2
0.8
+ꢃ2.5
+ꢃ2.0
+ꢃ1.5
+ꢃ1.0
T =
25
°
C
*APPLIES FOR I
/I
≤
5.0
C B
J
V
@ I
/I =
10
C B
+ 25
°
C to + 150
°
C
BE(sat)
+ꢃ0.5
0
*
q
FOR V
VC
CE(sat)
– 55
°
C to + 25
°
C
+ 25
°
C to + 150
°
C
V
BE
@ V
= 4.0 V
CE
-ꢃ0.5
-ꢃ1.0
-ꢃ1.5
-ꢃ2.0
V
@ I
/I =
10
C B
CE(sat)
0.4
0
q
FOR V
BE
VB
– 55
°
C to + 25
°
C
1.0 2.0
3.0 0.4
0.6
-ꢃ2.5
0.06
0.1
0.2 0.3
0.4 0.6
1.0
2.0 3.0
4.0 6.0
0.06 0.1
0.2 0.3
0.5
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
4
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
3
2
M
10
10
V
CE
= 30 V
V
CE
= 30 V
10
M
1.0
I
T =
150
°
C
J
= 10 x I
C
CES
1
0
10
100
°
C
I
C
= 2 x I
CES
k
k
100
10
25
°
C
10
I
C
≈
I
CES
-1
10
I
C
= I
CES
k
-ꢃ2
1.0
0.1
10
10
REVERSE
FORWARD
(TYPICAL I
VALUES
CES
OBTAINED FROM FIGURE 12)
k
-ꢃ3
-ꢃ0.3 -ꢃ0.2
-ꢃ0.1
V
0
+ꢃ0.1 +ꢃ0.2 +ꢃ0.3
+ꢃ0.4 +ꢃ0.5 +ꢃ0.6
+ꢃ0.7
20
40
60
80
100
120
140
160
, BASE‐EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
BE
Figure 12. Collector Cut-Off Region
Figure 13. Effects of Base−Emitter Resistance
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
