onsemi-BD442STU-ON

Part #onsemi-BD442STU-ON
Download 
onsemi-BD442STU-ON
BD440/442  
Medium Power Linear and Switching  
Applications  
•
Complement to BD439, BD441 respectively  
TO-126  
1. Emitter
 
2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings

T =25
°
C unless otherwise noted  

C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD440  
: BD442  
– 60  
– 80  
V
V
CES  
CEO  
EBO  
: BD440  
: BD442  
– 60  
– 80  
V
V
: BD440  
: BD442  
– 60  
– 80  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
– 5  
V
A
I
I
I
– 4  
– 7  
C
*Collector Current (Pulse)  
Base Current  
A
CP  
B
– 1  
A
P
Collector Dissipation (T
 
=25
°
C)  
36  
W
°
C  
°
C  
C
C
T
T
Junction
T
e
mperature  
Storage
T
e
mperature  
150  
J
– 65 ~ 1 50  
STG  
Electrical Characteristics

T =25
°
C unless otherwise noted  

C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: BD440  
: BD442  
I =
 
– 100mA, I
 
= 0  
-60  
-80  
V
V
C
B
I
Collector Cut-off Current  
Collector Cut-off Current  
: BD440  
: BD442  
V
V
= – 60V, I
 
= 0  
= – 80V, I
 
= 0  
E
– 100  
– 100  
µ
A  
µ
A  
CBO  
CB  
CB  
E
I
: BD440  
: BD442  
V
V
= – 60V, V
 
= 0  
– 100  
– 100  
µ
A  
µ
A  
CES  
CE  
CE  
BE  
= – 80V, V
 
= 0  
BE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
V
= – 5
V
, I
 
= 0  
– 1  
mA  
EBO  
EB  
CE  
C
h
: BD440  
: BD442  
: BD440  
: BD442  
: BD440  
: BD442  
= – 5V, I
 
= – 10mA  
20  
15  
40  
40  
25  
15  
140  
140  
140  
140  
FE  
C
V
V
= – 1
V
, I
 
= –
5
00mA  
C
CE  
CE  
= – 1V, I
 
= – 2A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= – 2A, I
 
= – 0.2A  
– 0.8  
– 1.5  
V
CE  
C
B
V
(on)  
V
V
= – 5V, I
 
= – 10mA  
-0.58  
V
V
BE  
CE  
CE  
C
= -1
V
, I
 
= –
2
A  
C
f
Current Gain Bandwidth Product  
V
= – 1
V
, I
 
= –
2
50mA  
3
MHz  
T
CE  
C
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

Typical Characteristics  
1000  
100  
10  
-1  
V

CE

= -1V  
I

C

= 10 I

B  

-0.1  
1
-0.01  
-0.1  
-0.01  
-0.1  
-1  
-10  
-1  
-10  
I

C

[A], COLLECTOR CURRENT  
I

C

[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
-5.0  
1000  
V

CE

= -1V  
-4.5  
-4.0  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
-0.0  
100  
10  
1
-0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-0.1  
-1  
-10  
-100  
V

BE

[V], BASE-EMITTER VOLTAGE  
V

CB

[V], COLLECTOR BASE VOLTAGE  
Figure 3. Base-Emitter On Voltage  
Figure 4. Collector-Base Capacitance  
48  
42  
36  
30  
24  
18  
12  
6
-10  
I

C

MAX. (Pulsed)  
1
µ
s  
10
µ
s  
I

C

Max. (Continuous)  
-1  
BD440  
BD442  
-0.1  
0
-1  
-10  
-100  
0
25  
50  
75  
100  
125  
150  
175  
200  
T

C

[

o

C], CASE TEMPERATURE  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

Package Demensions  
TO-126  
8.00
±
0.30  
3.25
±
0.20  
ø3.20
±
0.10  
(1.00)  
(0.50)  
0.75
±
0.10  
1.75
±
0.20  
1.60
±
0.10  
0.75
±
0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28
±
0.20]  
2.28TYP  
[2.28
±
0.20]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
SuperSOT™-3  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E

2

CMOS™  
EnSigna™  
FAST

®  

FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN
™  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
POP™  
PowerTrench

®  

QFET™  
HiSeC™  
QS™  
UltraFET

®  

VCX™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER

®  

SMART START™  
Stealth™  
FACT™  
FACT Quiet Series™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H2  

SEARCH |
Parametric
|
Cross Reference  
sp  
GO  
space  
Product Folders and  
Applica  
sp
a
s
pa  
Home
>>
Find products
>>  
sp
a
s
pa  
BD440  
PNP Epitaxial Silicon Transistor  
Contents  
Features
|
Applications
|
Product  
status/pricing/packaging  
Features  
●
Complement to BD439, BD441  
respectively  
Print version  
Design tools  
back to top  
Applications  
Medium Power Linear and Switching  
back to top  
Product status/pricing/packaging  
company  
Product  
Product status  
Pricing*  
$0.233  
Leads  
Packing method  
TO-126  
BD440S  
Full Production  
3
BULK  
* 1,000 piece Budgetary Pricing  
back to top  
Support
|
Company
|
Contact us
|
Site index
|
Privacy policy  
© Copyright 2002 Fairchild Semiconductor  

SEARCH |
Parametric
|
Cross Reference  
sp  
GO  
space  
Product Folders and  
Applica  
sp
a
s
pa  
Home
>>
Find products
>>  
sp
a
s
pa  
BD442  
PNP Epitaxial Silicon Transistor  
Contents  
Features
|
Applications
|
Product  
status/pricing/packaging  
Features  
●
Complement to BD439, BD441  
respectively  
Print version  
Design tools  
back to top  
Applications  
Medium Power Linear and Switching  
back to top  
Product status/pricing/packaging  
company  
Product  
BD442S  
BD442STU  
Product status  
Full Production  
Full Production  
Pricing*  
Leads  
Packing method  
BULK  
$0.233  
$0.233  
3
3
TO-126  
RAIL  
* 1,000 piece Budgetary Pricing  
back to top  
Support
|
Company
|
Contact us
|
Site index
|
Privacy policy  
© Copyright 2002 Fairchild Semiconductor