onsemi-BD675AG
| Part # | onsemi-BD675AG |
Download  | onsemi-BD675AG |
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
Features
•
High DC Current Gain
•
Monolithic Construction
60, 80, 100 VOLTS, 40 WATTS
•
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
•
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
•
These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR 2, 4
BASE 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
EMITTER 1
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
V
V
V
Vdc
CEO
CBO
EBO
45
60
80
100
TO−225
CASE 77−09
STYLE 1
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Vdc
45
60
80
100
1
2
3
Emitter−Base Voltage
Collector Current
5.0
4.0
1.0
Vdc
Adc
Adc
I
C
MARKING DIAGRAMS
Base Current
I
B
T
o
tal Device Dissipation
P
D
YWW
BD6xxG
YWW
BD6xxAG
@ T
= 25
°
C
40
0.32
W
W/
°
C
C
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
–
5
5 to
+
1
50
°
C
J
stg
BD6xx/BD6xxA =
Device Code
x = 75, 77, 79, 81
=
Y
e
ar
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
G
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ORDERING INFORMATION
Thermal Resistance, Junction−to−Case
R
3.13
°
C/W
q
JC
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 15
BD675/D
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
BV
Vdc
CEO
(I =
50 mAdc, I
= 0)
C
B
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
45
60
80
−
−
−
−
100
Collector Cutoff Current
I
I
m
Adc
CEO
(V =
Half Rated V
, I
= 0)
B
−
500
CE
CEO
Collector Cutoff Current
mAdc
CBO
(V =
Rated BV
(V =
Rated BV
CB
, I
= 0)
, I
= 0, T
= 100’C)
E C
−
−
0.2
2.0
CB
CEO
CEO
E
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
mAdc
−
EBO
−
2.0
BE
C
ON CHARACTERISTICS
h
FE
(I =
1.5 Adc,V
= 3.0 Vdc)
C
CE
BD675G, BD677G, BD679G, BD681G
(I =
2.0 Adc, V
= 3.0 Vdc)
750
750
−
−
C
CE
BD675AG, BD677AG, BD679AG
(I =
1.5 Adc, I
= 30 mAdc)
V
CE(sat)
Vdc
Vdc
C
B
BD677G, BD679G, BD681G
(I =
2.0 Adc, I
= 40 mAdc)
−
−
2.5
2.8
C
B
BD675AG, BD677AG, BD679AG
V
BE(on)
(I =
1.5 Adc, V
= 3.0 Vdc)
C
CE
BD677G, BD679G, BD681G
(I =
2.0 Adc, V
= 3 0 Vdc)
−
−
2.5
2.5
C
CE
BD675AG, BD677AG, BD679AG
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
h
fe
−
(I =
1.5 Adc, V
= 3.0 Vdc, f = 1.0 MHz)
1.0
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
50
45
5.0
40
35
30
25
20
2.0
1.0
BONDING WIRE LIMIT
THERMALLY LIMIT at T
= 25
°
C
C
SECONDARY BREAKDOWN LIMIT
0.5
15
10
0.2
0.1
BD675, 675A
BD677, 677A
T =
25
°
C
C
BD679, 679A
BD681
5.0
0
0.05
15 30
45
60
75
90
105 120 135 150 165
1.0
2.0
V
5.0
10
20
50
100
T ,
CASE TEMPERATURE (
°
C)
C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Power Temperature Derating
Figure 2. DC Safe Operating Area
2
BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
COLLECTOR
NPN
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
BASE
[
8.0 k
[
120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
BD675G
TO−225
500 Units / Box
(Pb−Free)
BD675AG
BD677G
BD677AG
BD679G
BD679AG
BD681G
TO−225
(Pb−Free)
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
225
CASE 77
−
09
ISSUE AD
4
DATE 25 MAR 2015
1
3
2
2
1
3
FRONT VIEW
BACK VIEW
SCALE 1:1
NOTES:
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A1
Q
A
MILLIMETERS
PIN 4
BACKSIDE TAB
DIM MIN
MAX
3.00
1.50
0.90
0.88
0.63
11.10
7.80
2.54
16.63
2.54
3.30
4.20
A
A1
b
2.40
1.00
0.60
0.51
0.39
10.60
7.40
2.04
14.50
1.27
2.90
3.80
D
b2
c
P
D
E
1
2
3
e
L
L1
P
Q
L1
GENERIC
MARKING DIAGRAM*
L
YWW
XX
XXXXXG
2X
b2
Y
=
Y
e
ar
WW
= Work Week
XXXXX = Device Code
= Pb
−
Free Package
e
2X
c
G
b
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
FRONT VIEW
SIDE VIEW
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1.
BASE
STYLE 4:
STYLE 5:
PIN 1.
MT 1
PIN 1.
EMITTER
2., 4.
COLLECTOR
3. BASE
PIN 1.
CATHODE
2., 4.
ANODE
3. GATE
PIN 1.
ANODE 1
2., 4.
ANODE 2
3. GATE
2., 4.
COLLECTOR
3. EMITTER
2., 4.
MT 2
3. GATE
STYLE 6:
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1.
CATHODE
2., 4.
GATE
3. ANODE
PIN 1.
MT 1
2., 4.
GATE
3. MT
2
PIN 1.
SOURCE
2., 4.
GATE
3. DRAIN
PIN 1.
GATE
2., 4.
DRAIN
3. SOURCE
PIN 1.
SOURCE
2., 4.
DRAIN
3. GATE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42049B
TO
−
225
PAGE 1 OF 1
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