onsemi-BD677AS-ON
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BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
•
•
Medium Power Darlington TR
Complement to BD676A, BD678A, BD680A and BD682 respectively
TO-126
1. Emitter
2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
: BD675A
45
60
80
V
V
V
V
CBO
: BD677A
: BD679A
: BD681
100
V
V
: BD675A
: BD677A
: BD679A
: BD681
45
60
80
V
V
V
V
CEO
EBO
100
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
5
V
A
I
I
I
4
6
C
A
CP
B
100
mA
W
°
C
°
C
P
Collector Dissipation (T
=25
°
C)
40
C
C
T
T
Junction
T
e
mperature
Storage
T
e
mperature
150
J
– 65 ~ 150
STG
Electrical Characteristics
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
V
(sus) *Collector-Emitter
Sustaining Voltage
CEO
: BD675A
: BD677A
: BD679A
: BD681
I
= 50mA, I
= 0
45
60
80
V
V
V
V
C
B
100
I
I
I
Collector-Base Voltage
: BD675A
V
V
V
V
= 45
V
, I
= 0
200
200
200
200
µ
A
µ
A
µ
A
µ
A
CBO
CEO
EBO
CB
CB
CB
CB
E
: BD677A
: BD679A
: BD681
= 60
V
, I
= 0
E
= 80
V
, I
= 0
E
= 100V, V
= 0
BE
Collector Cut-off Current
: BD675A
V
V
V
V
= 45
V
, V
= 0
500
500
500
500
µ
A
µ
A
µ
A
µ
A
CE
CE
CE
CE
BE
: BD677A
: BD679A
: BD681
= 60
V
, V
= 0
BE
= 80
V
, V
= 0
BE
= 100V, V
= 0
BE
Emitter Cut-off Current
V
= 5
V
, I
= 0
2
mA
EB
C
h
* DC Current Gain
: BD675A/677A/679A
: BD681
* Collector-Emitter Saturation Voltage
: BD675A/677A/679A
V
V
= 3
V
, I
=
2
A
750
750
FE
CE
CE
C
= 3
V
, I
=
1
.5A
C
V
V
(sat)
(on)
CE
I
I
= 2A, I
= 40mA
2.8
2.5
V
V
C
C
B
: BD681
= 1.5A, I
= 30mA
B
* Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
V
V
= 3
V
, I
=
2
A
2.5
2.5
V
V
BE
CE
CE
C
= 3
V
, I
=
1
.5A
C
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
10000
Ic = 250 I
B
2.4
2.0
1.6
1.2
0.8
0.4
0.0
V
CE
= 3V
1000
100
0.1
1
10
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
CE
= 3V
I
C
(max). Pulsed
10
µ
s
I
C
(max). Continuous
100
µ
s
1
1ms
BD675A
BD677A
BD679A
10ms
BD681
0.1
1
10
100
1000
0.0
0.5 0
1.0 1
1.5
2.0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T
C
[
o
C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-126
8.00
±
0.30
3.25
±
0.20
ø3.20
±
0.10
(1.00)
(0.50)
0.75
±
0.10
1.75
±
0.20
1.60
±
0.10
0.75
±
0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28
±
0.20]
2.28TYP
[2.28
±
0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST
®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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BD679A
NPN Epitaxial Silicon Transistor
Contents
Features
|
Applications
|
Product
status/pricing/packaging
Features
●
●
Medium Power Darlington TR
Complement to BD676A, BD678A,
BD680A and BD682 respectively
Print version
Design tools
back to top
Applications
Medium Power Linear and Switching
back to top
company
Product status/pricing/packaging
Product
BD679ASTU
BD679AS
Product status
Full Production
Full Production
Pricing*
Leads
Packing method
RAIL
$0.249
$0.249
3
3
TO-126
BULK
* 1,000 piece Budgetary Pricing
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|
Company
|
Contact us
|
Site index
|
Privacy policy
© Copyright 2002 Fairchild Semiconductor
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BD677A
NPN Epitaxial Silicon Transistor
Contents
Features
|
Applications
|
Product
status/pricing/packaging
Features
●
●
Medium Power Darlington TR
Complement to BD676A, BD678A,
BD680A and BD682 respectively
Print version
Design tools
back to top
Applications
Medium Power Linear and Switching
back to top
company
Product status/pricing/packaging
Product
BD677AS
BD677ASTU
Product status
Full Production
Full Production
Pricing*
Leads
Packing method
BULK
$0.249
$0.249
3
3
TO-126
RAIL
* 1,000 piece Budgetary Pricing
back to top
Support
|
Company
|
Contact us
|
Site index
|
Privacy policy
© Copyright 2002 Fairchild Semiconductor
SEARCH |
Parametric
|
Cross Reference
sp
GO
Home
>>
Find products
>>
BD675A
NPN Epitaxial Silicon Transistor
Contents
Features
|
Applications
|
Product
status/pricing/packaging
Features
●
●
Medium Power Darlington TR
Complement to BD676A, BD678A,
BD680A and BD682 respectively
Print version
Design tools
back to top
Applications
Medium Power Linear and Switching
back to top
company
Product status/pricing/packaging
Product
Product status
Pricing*
Leads
Packing method
TO-126
BD675AS
Full Production
$0.245
3
BULK
* 1,000 piece Budgetary Pricing
back to top
Support
|
Company
|
Contact us
|
Site index
|
Privacy policy
© Copyright 2002 Fairchild Semiconductor
SEARCH |
Parametric
|
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BD681
NPN Epitaxial Silicon Transistor
Contents
Features
|
Applications
|
Product
status/pricing/packaging
Features
●
●
Medium Power Darlington TR
Complement to BD676A, BD678A,
BD680A and BD682 respectively
Print version
Design tools
back to top
Applications
Medium Power Linear and Switching
back to top
company
Product status/pricing/packaging
Product
BD681STU
BD681S
Product status
Full Production
Full Production
Pricing*
Leads
Packing method
RAIL
$0.247
$0.247
3
3
TO-126
BULK
* 1,000 piece Budgetary Pricing
back to top
Support
|
Company
|
Contact us
|
Site index
|
Privacy policy
© Copyright 2002 Fairchild Semiconductor
