onsemi-BD809G
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BD809ꢀ(NPN),
BD810ꢀ(PNP)
Plastic High Power
Silicon
T
r
ansistors
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
Features
10 AMPERE
POWER TRANSISTORS
80 VOLTS
•
High DC Current Gain
•
These Devices are Pb−Free and are RoHS Compliant*
90 WATTS
MAXIMUM RATINGS
PNP
NPN
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
COLLECTOR 2, 4
COLLECTOR 2, 4
V
CEO
V
CBO
V
EBO
80
1
1
5.0
10
BASE
BASE
I
C
EMITTER 3
EMITTER 3
Base Current
I
B
6.0
T
o
tal Device Dissipation
P
D
4
@ T
= 25
°
C
90
0.72
W
W/
°
C
C
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−55 to +150
°
C
J
stg
TO−220
CASE 221A
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
2
3
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
1.39
°
C/W
q
JC
BD8xxG
AY WW
BD8xx
=
Device Code
x = 09 or 10
Assembly Location
Y
e
ar
Work Week
Pb−Free Package
A
Y
WW
G
=
=
=
=
ORDERING INFORMATION
Device
Package
Shipping
BD809G
TO−220
50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
BD810G
TO−220
(Pb−Free)
50 Units/Rail
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 8
BD809/D
BD809 (NPN), BD810 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
BV
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(I =
0.1 Adc, I
= 0)
Vdc
CEO
80
−
C
B
Collector Cutoff Current
(V =
80 Vdc, I
= 0)
I
mAdc
CBO
CB
E
−
−
1.0
2.0
Emitter Cutoff Current
I
mAdc
−
EBO
(V =
5.0 Vdc, I
= 0)
BE
C
DC Current Gain
h
FE
(I =
2.0 A, V
= 2.0 V)
C
CE
30
15
−
−
(I =
4.0 A, V
= 2.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 1)
(I =
3.0 Adc, I
= 0.3 Adc)
V
Vdc
Vdc
MHz
CE(sat)
−
−
1.1
1.6
−
C
B
Base−Emitter On Voltage (Note 1)
(I =
4.0 Adc, V
= 2.0 Vdc)
V
BE(on)
C
CE
Current−Gain Bandwidth Product
(I =
1.0 Adc, V
= 10 Vdc, f = 1.0 MHz)
f
T
1.5
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
90
.5 ms
80
1 ms
1 ms
5 ms
10
70
60
50
40
30
20
10
0
3
1
dc
0.3
0.1
1
3
10
30
100
0
25
50
75
100
125
150
175
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Active Region DC Safe Operating Area
Figure 2. Power−Temperature Derating Curve
BD810 (PNP)
(see Note on page 3)
BD809 (NPN)
500
500
T =
150
°
C
J
T =
150
°
C
J
200
100
50
200
100
50
25
°
C
25
°
C
-ꢀ55
°
C
-ꢀ55
°
C
20
10
20
10
V
CE
= 2.0 V
0.5
V
CE
= 2.0 V
0.5
5.0
5.0
0.2
1.0
2.0
5.0
10
20
0.2
1.0
2.0
5.0
10
20
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 3. DC Current Gain
2
BD809 (NPN), BD810 (PNP)
2.0
1.8
1.6
1.4
1.2
1.0
2.0
T =
25
°
C
J
T =
25
°
C
J
1.8
1.6
1.4
1.2
1.0
I =
1.0 A
C
4.0 A
8.0 A
I =
1.0 A
C
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
4.0 A
8.0 A
0
0
5.0 10
20
50 100
200 500
1000
2000 5000
5.0 10
20
50 100
200 500
1000 2000
5000
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
2.8
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
T =
25
°
C
J
T =
25
°
C
2.4
2.0
1.6
1.2
0.8
0.4
0
J
V
@ I
/I =
10
C B
V
= I
/I =
10
C B
BE(sat)
BE(sat)
V
@ V
= 2.0 V
CE
V
BE
@ V
= 2.0 V
CE
BE
V
@ I
/I =
10
B
V @
I /I
= 10
CE(sat) C
B
CE(sat)
C
0.2
0.5
1.0
2.0
5.0
10
20
0.2
0.5
1.0
2.0
5.0
10
20
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 5. “On” Voltages
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
0.02
P
(pk)
SINGLE
PULSE
0.1
0.07
0.05
q
(t) = r(t)
q
JC
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
t
2
SINGLE PULSE
READ TIME AT t
1
0.01
T
– T
= P
q
(t)
C (pk)
JC
J(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
20 30
50
100
200 300
500
1000
t, PULSE WIDTH (ms)
Figure 6. Thermal Response
Note:
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
The data of Figure 1 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
= 150
°
C; T
is
J(pk) C
breakdown. Safe operating area curves indicate I
− V
C
CE
J(pk)
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
≤
150
°
C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
PAGE 1 OF 1
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Semiconductor Components Industries, LLC, 2019
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