onsemi-BDX33CG
| Part # | onsemi-BDX33CG |
Download  | onsemi-BDX33CG |
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power
T
r
ansistors
These devices are designed for general purpose and low speed
switching applications.
Features
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
•
High DC Current Gain − h
= 2500 (typ.) at I
= 4.0
FE
C
•
Collector−Emitter Sustaining
V
o
ltage at 100 mAdc
V
= 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
CEO(sus)
•
Low Collector−Emitter Saturation
V
o
ltage
V
= 2.5 Vdc (max) at I
= 3.0 Adc
CE(sat)
C
− BDX33B, 33C/34B, 34C
•
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
V
CEO
Vdc
80
100
1
2
3
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
V
CB
Vdc
TO−220
CASE 221A
STYLE 1
80
100
Emitter−Base Voltage
V
5.0
Vdc
Adc
EB
MARKING DIAGRAM
Collector Current
Continuous
Peak
I
10
15
C
Base Current
I
B
0.25
Adc
T
o
tal Device Dissipation @ T
= 25
°
C
P
70
0.56
W
W/
°
C
C
D
BDX3xyG
AY WW
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
J
−65 to +150
°
C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BDX3xy =
Device Code
x = 3 or 4
THERMAL CHARACTERISTICS
y = B or C
A
Y
WW
G
=
=
=
=
Assembly Location
Y
e
ar
Work Week
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
1.78
°
C/W
q
JC
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 14
BDX33B/D
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
80
60
40
20
0
0
20
40
60
80
100
120
140 160
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
V
Vdc
CEO(sus)
CER(sus)
(I =
100 mAdc, I
= 0)
BDX33B/BDX34B
BDX33C/BDX34C
80
100
−
−
C
B
Collector−Emitter Sustaining Voltage (Note 1)
(I =
100 mAdc, I
= 0, R
= 100)
V
Vdc
Vdc
BDX33B/BDX34B
BDX33C/BDX33C
80
100
−
−
C
B
BE
Collector−Emitter Sustaining Voltage (Note 1)
V
CEX(sus)
(I =
100 mAdc, I
= 0, V
= 1.5 Vdc)
BDX33B/BDX34B
BDX33C/BDX34C
80
100
−
−
C
B
BE
Collector Cutoff Current
I
I
mAdc
mAdc
mAdc
CEO
CBO
(V =
1/2 rated V
, I
= 0)
T =
25
°
C
C
C
−
−
0.5
10
CE
CEO
B
T
= 100
°
C
Collector Cutoff Current
(V =
rated V
, I
= 0)
T
= 25
°
C
−
−
1.0
5.0
CB
CBO
E
C
T
C
= 100
°
C
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
−
10
EBO
BE
C
ON CHARACTERISTICS
DC Current Gain (Note 1)
h
750
−
−
−
FE
(I =
3.0 Adc, V
= 3.0 Vdc)
BDX33B, 33C/34B, 34C
BDX33B, 33C/34B, 34C
BDX33B, 33C/34B, 34C
C
CE
Collector−Emitter Saturation Voltage
(I =
3.0 Adc, I
= 6.0 mAdc)
V
2.5
2.5
4.0
Vdc
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I =
3.0 Adc, V
= 3.0 Vdc)
V
−
BE(on)
C
CE
Diode Forward Voltage
(I =
8.0 Adc)
V
−
F
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2. Pulse
T
e
st non repetitive: Pulse Width = 0.25 seconds.
2
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
0.05
0.02
0.1
0.07
0.05
R
R
(t) = r(t) R
q
JC
q
q
JC
JC
= 1.92
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
SINGLE
PULSE
0.03
0.02
t
2
SINGLE PULSE
READ TIME AT t
1
0.01
T
– T
= P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 1. Thermal Response
20
10
20
100
m
s
100
m
s
10
500
m
s
500
m
s
5.0 ms
1.0 ms
5.0 ms
1.0 ms
5.0
5.0
T
= 25
°
C
T =
25
°
C
C
C
dc
dc
2.0
1.0
0.5
2.0
1.0
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
= 25
°
C
ꢀ(SINGLE PULSE)
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
= 25
°
C
ꢀ(SINGLE PULSE)
C
C
0.2
0.1
0.2
0.1
SECOND BREAKDOWN LIMITED
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
CURVES APPLY BELOW RATED V
CEO
0.05
0.05
BDX34B
BDX34C
BDX33B
BDX33C
0.02
0.02
1.0 2.0
3.0
5.0 7.0
10
20 30
50 70
100
1.0 2.0
3.0
5.0 7.0
V ,
COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
10
20 30
50 70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
− V
limits
= 150
°
C; T
is variable depending on conditions. Second
C
breakdown pulse limits are valid for duty cycles to 10%
provided T
= 150
°
C. T
may be calculated from the
C
CE
J(pk)
J(pk)
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
data in Figure
4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
than the curves indicate. The data of Figure 3 is based on T
J(pk)
10,000
5000
300
T =
25
°
C
J
3000
2000
200
1000
500
T =
25
°
C
J
CE
C
100
70
ob
V
= 4.0 Vdc
300
200
I
C
= 3.0 Adc
C
ib
100
50
50
PNP
NPN
PNP
NPN
30
20
10
30
0.1 0.2
1.0 2.0
5.0 10
20
f, FREQUENCY (kHz)
50 100 200
500 1000
0.5
1.0 2.0
V ,
REVERSE VOLTAGE (VOLTS)
5.0 10
20
50 100
R
Figure 3. Small−Signal Current Gain
Figure 4. Capacitance
3
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
NPN
PNP
BDX33B, 33C
BDX34B, 34C
20,000
10,000
20,000
V
CE
= 4.0 V
V
CE
= 4.0 V
10,000
5000
T =
150
°
C
J
5000
T =
150
°
C
J
3000
2000
3000
2000
25
°
C
25
°
C
1000
500
1000
500
-ꢁ55
°
C
-ꢁ55
°
C
300
200
300
200
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 5. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T =
25
°
C
T =
25
°
C
J
J
2.6
2.2
1.8
1.4
1.0
I
= 2.0 A
4.0 A
6.0 A
I
= 2.0 A
4.0 A
6.0 A
C
C
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20 30
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 6. Collector Saturation Region
3.0
3.0
2.5
2.0
T =
25
°
C
J
T =
25
°
C
J
2.5
2.0
V
@ I
/I =
250
C B
BE(sat)
V
@ V
= 4.0 V
CE
BE
1.5
1.0
0.5
1.5
1.0
0.5
V
BE
@ V
= 4.0 V
CE
V
@ I
/I =
250
C B
BE(sat)
V
@ I
/I =
250
C B
CE(sat)
V
@ I
/I =
250
C B
CE(sat)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 7. “On” Voltages
4
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
ORDERING INFORMATION
†
Device
Package
Shipping
BDX33BG
BDX33CG
BDX34BG
BDX34CG
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO
−
220
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