onsemi-BDX54CG
| Part # | onsemi-BDX54CG |
Download  | onsemi-BDX54CG |
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VO
L
TS, 65 WATTS
Features
•
High DC Current Gain −
h
FE
= 2500 (Typ) @ I
= 4.0 Adc
C
•
Collector Emitter Sustaining
V
o
ltage − @ 100 mAdc
V
V
= 80 Vdc (Min) − BDX53B, 54B
= 100 Vdc (Min) − BDX53C, 54C
CEO(sus)
CEO(sus)
4
•
Low Collector−Emitter Saturation
V
o
ltage −
V
V
= 2.0 Vdc (Max) @ I
= 3.0 Adc
C
CE(sat)
= 4.0 Vdc (Max) @ I
= 5.0 Adc
CE(sat)
C
•
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
1
2
3
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
Vdc
CEO
TO−220
CASE 221A
STYLE 1
BDX53B, BDX54B
BDX53C, BDX54C
80
100
Collector−Base Voltage
V
Vdc
CB
BDX53B, BDX54B
BDX53C, BDX54C
80
100
MARKING DIAGRAM
& PIN ASSIGNMENT
Emitter−Base Voltage
V
5.0
Vdc
Adc
EB
4
Collector Current
− Continuous
− Peak
I
8.0
12
C
Collector
Base Current
I
B
0.2
Adc
T
o
tal Device Dissipation @ T
= 25
°
C
P
D
65
0.48
W
W/
°
C
C
Derate above 25
°
C
BDX5xyG
AY WW
Operating and Storage Junction
T
e
mperature Range
T , T
−65 to +150
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
3
Base
Emitter
2
Collector
THERMAL CHARACTERISTICS
BDX5xy =
Device Code
x = 3 or 4
Characteristic
Symbol
Max
70
Unit
°
C/W
°
C/W
y = B or C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
A
Y
WW
G
=
=
=
=
Assembly Location
Y
e
ar
Work Week
R
1.92
q
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 15
BDX53B/D
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
T
A
T
C
4.0 80
3.0 60
T
C
2.0 40
1.0 20
0
T
A
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
100 mAdc, I
= 0)
BDX53B, BDX54B
BDX53C, BDX54C
80
100
−
−
C
B
Collector Cutoff Current
(V =
40 Vdc, I
= 0)
I
I
mAdc
mAdc
CEO
CBO
BDX53B, BDX54B
BDX53C, BDX54C
−
−
0.5
0.5
CE
B
(V =
50 Vdc, I
= 0)
CE
B
Collector Cutoff Current
(V =
80 Vdc, I
= 0)
BDX53B, BDX54B
BDX53C, BDX54C
−
−
0.2
0.2
CB
E
(V =
100 Vdc, I
= 0)
CB
E
DC Current Gain
h
FE
750
−
−
(I =
3.0 Adc, V
= 3.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
3.0 Adc, I
= 12 mAdc)
V
V
−
−
2.0
4.0
Vdc
CE(sat)
BE(sat)
C
B
Base−Emitter Saturation Voltage
(I =
3.0 Adc, I
= 12 mA)
−
2.5
Vdc
C
C
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
h
fe
4.0
−
−
(I =
3.0 Adc, V
= 4.0 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
C
pF
ob
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
CB
BDX53B, 53C
BDX54B, 54C
−
−
300
200
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
2
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
V
CC
–
3
0 V
5.0
R
AND R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
D MUST
BE FAST RECOVERY TYPES, e.g.:
B
t
s
3.0
2.0
1
ꢂ1N5825 USED ABOVE I
[
100 mA
B
R
C
ꢂMSD6100 USED BELOW I
[
100 mA
B
SCOPE
t
f
TUT
1.0
0.7
0.5
R
B
V
2
APPROX
+
8
.0 V
D
51
1
[
8.0 k
[
120
0.3
0.2
0
t
r
V
= 30 V
I /I
= 250
CC
V
+
4
.0 V
1
C
B
= I
APPROX
-12 V
25
m
s
0.1
0.07
0.05
I
B1 B2
for t
and t , D
is disconnected
d
r
1
T =
25
°
C
t @
V
d
= 0 V
J
BE(off)
and V
= 0
2
t , t
v
10 ns
r
f
DUTY CYCLE = 1.0%
For NPN test circuit reverse all polarities
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
0.05
0.02
0.1
0.07
0.05
R
R
(t) = r(t) R
q
JC
q
q
JC
JC
= 1.92
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
SINGLE
PULSE
0.03
0.02
t
2
SINGLE PULSE
0.01
1
T
– T
= P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
20
There are two limitations on the power handling ability of
a transistor average junction temperature and second
100
m
s
500
m
s
10
breakdown. Safe operating area curves indicate I
−V
C
CE
5.0
5.0 ms
1.0 ms
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
dc
2.0
1.0
0.5
T =
150
°
C
J
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
= 25
°
C
ꢂ(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
The data of Figure 5 is
based on T
= 150
°
C; T
is
C
J(pk)
C
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
0.2
0.1
CURVES APPLY BELOW RATED V
CEO
T
t
150
°
C. T
may be calculated from the data in
J(pk)
J(pk)
Figure 4.
At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
BDX53B, BDX54B
BDX53C, BDX54C
0.02
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
3
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
10,000
5000
300
200
T =
+ 25
°
C
J
3000
2000
1000
500
C
100
ob
300
200
T =
25
°
C
J
V
= 3.0 V
CE
= 3.0 A
C
ib
70
50
I
C
100
50
30
20
PNP
NPN
PNP
NPN
10
1.0
30
0.1
2.0
5.0 10
20
50 100 200
500 1000
0.2
0.5
1.0 2.0
5.0 10
20
50 100
V ,
REVERSE VOLTAGE (VOLTS)
R
f, FREQUENCY (kHz)
Figure 6. Small-Signal Current Gain
Figure 7. Capacitance
NPN
PNP
BDX53B, 53C
BDX54B, 54C
20,000
10,000
5000
20,000
10,000
V
CE
= 4.0 V
V
CE
= 4.0 V
T =
150
°
C
J
5000
T =
150
°
C
J
3000
2000
3000
2000
25
°
C
25
°
C
1000
500
1000
500
-ꢃ55
°
C
-ꢃ55
°
C
300
200
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T =
25
°
C
T =
25
°
C
J
J
2.6
2.2
1.8
1.4
1.0
I
= 2.0 A
4.0 A
6.0 A
I
= 2.0 A
4.0 A
6.0 A
C
C
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20 30
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
4
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
3.0
3.0
2.5
2.0
T =
25
°
C
J
T =
25
°
C
J
2.5
2.0
V
@ I
/I =
250
C B
BE(sat)
V
@ V
= 4.0 V
CE
BE
1.5
1.0
0.5
1.5
1.0
0.5
V
BE
@ V
= 4.0 V
CE
V
@ I
/I =
250
C B
BE(sat)
V
@ I
/I =
250
C B
CE(sat)
V
@ I
/I =
250
C B
CE(sat)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
NPN
BDX53B, BDX53C
PNP
BDX54B, BDX54C
+ꢃ5.0
+ꢃ4.0
+ꢃ3.0
+ꢃ2.0
+ꢃ1.0
0
+ꢃ5.0
+ꢃ4.0
*I /I
v
h
*I /I
v
h
C
B
FE/3
C
B
FE/3
+ꢃ3.0
25
°
C to 150
°
C
-ꢃ55
°
C to 25
°
C
25
°
C to 150
°
C
-ꢃ55
°
C to 25
°
C
+ꢃ2.0
+ꢃ1.0
0
-ꢃ1.0
-ꢃ2.0
*
q
for V
VC
*
q
for V
VC CE(sat)
-ꢃ1.0
-ꢃ2.0
CE(sat)
25
°
C to 150
°
C
25
°
C to 150
°
C
-ꢃ3.0
-ꢃ4.0
-ꢃ3.0
-ꢃ4.0
q
for V
q
for V
VB BE
VB
BE
-ꢃ55 to 150
°
C
5.0 7.0 10
-ꢃ55 to 150
°
C
2.0 3.0
5.0 7.0 10
-ꢃ5.0
-ꢃ5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
0.1
0.2 0.3
0.5 0.7 1.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 11. Temperature Coefficients
5
5
10
10
REVERSE
= 30 V
FORWARD
FORWARD
REVERSE
4
4
10
10
V
CE
V
CE
= 30 V
3
3
10
10
2
10
2
1
0
10
10
10
T =
150
°
C
J
T =
150
°
C
J
1
10
100
°
C
25
°
C
100
°
C
0
10
25
°
C
-ꢃ0.6 -ꢃ0.4
-ꢃ0.2
-ꢃ1
-ꢃ1
10
10
0
+ꢃ0.2 +ꢃ0.4 +ꢃ0.6
+ꢃ0.8 +ꢃ1.0
+ꢃ1.2 +
1.4
+ꢃ0.6 +ꢃ0.4 +ꢃ0.2
0
-ꢃ0.2 -ꢃ0.4 -ꢃ0.6 -ꢃ0.8 -ꢃ1.0 -ꢃ1.2
-ꢃ1.4
V
BE
, BASE‐EMITTER VOLTAGE (VOLTS)
V
BE
, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
5
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
NPN
BDX53B
BDX53C
COLLECTOR
PNP
BDX54B
BDX54C
COLLECTOR
BASE
BASE
[
8.0 k
[
120
[
8.0 k
[
120
EMITTER
EMITTER
Figure 13. Darlington Schematic
ORDERING INFORMATION
†
Device
Package
Shipping
BDX53BG
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
BDX53CG
BDX54BG
BDX54CG
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
6
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800−282−9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
Literature Distribution Center for ON Semiconductor
P
.
O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303−675−2175 or 800−344−3860
T
o
ll Free USA/Canada
Fax
: 303−675−2176 or 800−344−3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
BDX53B/D
