onsemi-BSS123LT1G
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BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N
−
Channel SOT
−
23
170 mAMPS
100 VOLTS
R
DS(on)
= 6
W
Features
•
BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
N
−
Channel
•
These Devices are Pb
−
Free and are RoHS Compliant
3
MAXIMUM RATINGS
Rating
Drain
−
Source Voltage
Symbol
Value
Unit
V
DSS
100
Vdc
1
Gate
−
Source Voltage
−
Continuous
V
20
40
Vdc
Vpk
GS
−
Non
−
repetitive (t
≤
50
m
s)
V
GSM
p
2
Drain Current
Adc
I
0.17
0.68
D
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
I
DM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
3
1
SA M
G
THERMAL CHARACTERISTICS
2
G
Characteristic
Symbol
Max
Unit
SOT
−
23
CASE 318
STYLE 21
T
o
tal Device Dissipation FR
−
5 Board
1
Gate
2
Source
P
D
225
1.8
mW
mW/
°
C
A
Derate above 25
°
C
SA =
Device Code
Thermal Resistance,
Junction
−
to
−
Ambient
R
556
°
C/W
q
JA
M
= Date Code
G
= Pb
−
Free Package
Junction and Storage
T
e
mperature
T , T
J
−
55 to +150
°
C
stg
(*Note: Microdot may be in either location)
1. The
Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse
Width
v
300
m
s, Duty Cycle
v
2.0%.
3. FR
−
5 = 1.0
ꢀ
0.75
ꢀ
0.062 in.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
November, 2013
−
Rev. 9
BSS123LT1/D
BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
−
Source Breakdown Voltage
V
100
−
−
Vdc
(BR)DSS
(V =
0, I
= 250
m
Adc)
GS
D
Zero Gate Voltage Drain Current
(V =
0, V
= 100 Vdc)
T =
25
°
C
I
m
Adc
DSS
−
−
−
−
15
60
GS
DS
J
T =
125
°
C
J
Gate
−
Body Leakage Current
(V =
20 Vdc, V
= 0)
I
−
−
50
nAdc
GSS
GS
DS
Gate Threshold Voltage
V
1.6
−
−
−
−
2.6
6.0
−
Vdc
W
GS(th)
(V =
V ,
I =
1.0 mAdc)
DS
GS
D
Static Drain
−
Source On
−
Resistance
(V =
10 Vdc, I
= 100 mAdc)
r
DS(on)
GS
D
Forward Transconductance
(V =
25 Vdc, I
= 100 mAdc)
g
fs
80
mmhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V =
25 Vdc, V
= 0, f = 1.0 MHz)
DS
C
−
−
−
20
9.0
4.0
−
−
−
pF
pF
pF
iss
GS
Output Capacitance
(V =
25 Vdc, V
= 0, f = 1.0 MHz)
C
oss
DS
GS
Reverse Transfer Capacitance
(V =
25 Vdc, V
= 0, f = 1.0 MHz)
C
rss
DS
GS
SWITCHING CHARACTERISTICS
(4)
Turn
−
On Delay Time
t
−
−
20
40
−
−
ns
ns
d(on)
(V =
30 Vdc, I
= 0.28 Adc,
CC
C
V
GS
= 10 Vdc, R
= 50
W
)
GS
Turn
−
Off Delay Time
t
d(off)
REVERSE DIODE
Diode Forward On
−
Voltage
V
SD
−
−
1.3
V
(I =
0.34 Adc, V
= 0 Vdc)
D
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
ORDERING INFORMATION
†
Device
Package
Shipping
BSS123LT1G
BSS123LT3G
BVSS123LT1G*
SOT
−
23
3000 /
T
a
pe & Reel
(Pb
−
Free)
SOT
−
23
(Pb
−
Free)
10000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.6
V
GS
= 10 V
8 V
T =
25
°
C
J
1.4
1.2
1.0
0.8
0.6
0.4
V
DS
= 10 V
6 V
5 V
4 V
T =
25
°
C
J
3 V
9
0.2
0
0.2
0
T =
150
°
C
T =
−
55
°
C
J
J
0
1
2
3
4
5
6
7
8
10
1
0
0
2
3
4
5
6
V
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
3.50
3.25
3.00
2.75
50
40
T =
25
°
C
J
T =
25
°
C
J
V
GS
= 0
V
= 4.5 V
= 10 V
GS
30
20
C
iss
V
GS
C
oss
2.50
2.25
10
0
C
rss
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90
100
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
I ,
DRAIN CURRENT (mA)
D
V
DS
Figure 3. On
−
Resistance vs. Drain Current and
Figure 4. Capacitance Variation
Gate Voltage
10
8
1
Q
T
V
GS
= 0 V
0.1
6
0.01
Q
GS
4
T =
25
°
C
J
Q
0.001
GD
V
V
I
= 10 V
= 30 V
= 0.2 A
GS
2
0
DS
T =
125
°
C T
= 25
°
C
J
T =
−
55
°
C
D
J
J
0.0001
0
1
2
3
4
5
6
7
8
0.2
0.4
0.6
0.8
1.0
1.2
Q ,
TOTAL GATE CHARGE (nC)
G
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
Figure 5. Gate
−
to
−
Source and
Drain
−
to
−
Source Voltage vs. Total Charge
Figure 6. Diode Forward Voltage vs. Current
3
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1
0 V
≤
V
≤
20 V
GS
100
m
s
SINGLE PULSE
T =
25
°
C
T =
150
°
C
J
A
1 ms
10 ms
0.1
0.01
100 ms
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
dc
0.001
0.1
1
10
100
1000
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
2
1 oz. Cu Pad, 5
m
m thick, 25mm
area
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1 10
100 1000
t, TIME (s)
Figure 8. Thermal Response
4
BSS123LT1G, BVSS123LT1G
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AP
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
q
2.10
0
°
2.40
−−−
2.64
10
°
0.083
0
°
0.094
−−−
0.104
10
°
A
E
L
STYLE 21:
PIN 1.
GATE
A1
L1
VIEW C
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
P
.
O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
BSS123LT1/D
