onsemi-BSS123W

Part #	onsemi-BSS123W
Download	onsemi-BSS123W

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December 2015

BSS123W

N-Channel Logic Level Enhancement Mode Field Effect

Transistor

Features

Description

• 0.17

A, 100

DS(ON)

= 6

at V

= 10 V

DS(ON)

= 10

at V

= 4.5 V

• High

Density Cell Design for Low R

DS(ON)

• Rugged

and Reliable

This N-channel enhancement mode field effect transistor

is produced using high cell density, trench MOSFET

technology. This product minimizes on-state resistance

while providing rugged, reliable and fast switching perfor-

mance. This product is particularly suited for low-voltage,

low-current applications such as small servo motor con-

trol, power MOSFET gate drivers, logic level transistor,

high speed line drivers, power management/power sup-

ply and switching applications.

• Ultra

Small Surface Mount Package

• Very

Low Capacitance

• Fast

Switching Speed

• Lead

Free / RoHS Compliant

SOT-323

Ordering Information

Part Number

Marking

Package

Packing Method

BSS123W

SOT-323 3L

pe and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Symbol

DSS

Parameter

Value

100

Unit

Drain-Source Voltage

DGR

Drain-Gate Voltage R

≤

20 k

100

GSS

Gate-Source Voltage

±20

Continuous

Pulsed

0.17

Drain Current

0.68

, T

STG

Operating and Storage

mperature Range

-55 to +150

BSS123W Rev. 1.0

www.fairchildsemi.com

Thermal Characteristics

Values are at T

= 25°C unless otherwise noted.

Symbol

Parameter

Value

200

Unit

tal Power Dissipation

Derate Above 25

1.6

mW/

C/W

Thermal Resistance, Junction-to-Ambient

(1)

625

Note:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

Electrical Characteristics

Values are at T

= 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

DSS

Drain-Source Breakdown Voltage

= 0

= 250

100

= 100 V, V

= 0 V

Zero Gate Voltage Drain Current

DSS

= 20 V, V

= 0 V

-50

GSSF

GSSR

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

= 20 V, V

= 0 V

= -20 V, V

= 0 V

On Characteristics

(2)

GS(th)

Gate Threshold Voltage

= V

= 1 mA

0.8

1.7

2.0

= 10 V, I

= 0.17 A

1.39

1.48

DS(ON)

Static Drain-Source On-Resistance

= 4.5 V, I

= 0.17 A

Forward Transconductance

= 10 V, I

= 0.17 A

Drain-Source Diode Forward

Voltage

= 0

, I

= 0.34 A

0.81

1.30

Dynamic Characteristics

iss

oss

rss

Input Capacitance

6.6

_{DS
= 25 V, V
GS
= 0 V,}

Output Capacitance

f = 1.0 MHz

Reverse Transfer Capacitance

2.74

Switching Characteristics

(2)

Turn-On Rise Time

Turn-Off Fall Time

Turn-On Delay

1.24

5.73

2.94

8.4

= 30 V, I

= 0.28 A,

= 10 V, R

GEN

= 6

d(on)

d(off)

Note:

Turn-Off Delay

2. Pulse test: pulse width

≤

300

s, duty cycle

≤

2.0%.

BSS123W Rev. 1.0

www.fairchildsemi.com

Typical Performance Characteristics

1.6

1.5

1.4

1.3

1.2

1.1

= 10V

3.5V

6.0V

0.8

4.5V

3.0V

= 2.5V

0.6

0.4

0.2

2.5V

3.0V

3.5V

4.5V

0.6

6.0V

10V

2.0V

0.9

0.2

0.4

0.8

, DRAIN CURRENT (A)

_{DS
, DRAIN TO SOURCE VOLTAGE (V)}

Figure 2. On-Resistance Variation with Drain Current

and Gate Voltage

Figure 1. On-Region Characteristics

2.2

3.4

= 170mA

= 10V

= 0.08A

1.8

1.6

1.4

1.2

= 125

2.6

2.2

1.8

0.8

0.6

0.4

1.4

= 25

-50

-25

100

125

150

, JUNCTION TEMPERATURE (

, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with Gate-to-

Source Voltage

Figure 3. On-Resistance Variation with Temperature

= 0V

= 10V

0.8

0.6

0.1

= 125

0.01

0.4

-55

= 125

0.001

0.2

-55

2.5

0.0001

1.5

0.2

0.4

0.6

0.8

1.2

, GATE TO SOURCE VOLTAGE (V)

, BODY

DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation with

Source Current and Temperature

Figure 5. Transfer Characteristics

BSS123W Rev. 1.0

www.fairchildsemi.com

Typical Performance Characteristics

(Continued)

f = 1 MHz

_{GS
= 0 V}

= 0.17A

= 30V

50V

iss

100

70V

oss

rss

0.4

0.8

1.2

1.6

0.1

100

, GATE CHARGE (nC)

– DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance

Figure 7. Gate Charge Characteristics

BSS123W Rev. 1.0

www.fairchildsemi.com

Physical Dimensions

Figure 9. 3-LEAD, SC70, EIAJ SC-70, 1.25MM WIDE

BSS123W Rev. 1.0

www.fairchildsemi.com

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MTx

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SuperSOT

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MVN

mWSaver

Xsens™

OptoHiT

௝❺

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Sync-Lock™

OPTOLOGIC

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Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary

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Definition of Terms

Datasheet Identification

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Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Preliminary

No Identification Needed

Obsolete

First Production

Full Production

Not In Production

Rev. I77

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at

www.onsemi.com/site/pdf/Patent

−

Marking.pdf

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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