onsemi-BSS84LT1G

BSS84L, BVSS84L  

Power MOSFET  

Single P-Channel SOT-23  

-50

V

,

1

0

W

 

•

SOT

−

23 Surface Mount Package Saves Board Space  

•

AEC Q101 Qualified and PPAP Capable

−

BVSS84L  

•

These Devices are Pb

−

Free and are RoHS Compliant  

V

R

MAX  

DS(ON)  

(BR)DSS  

MAXIMUM RATINGS

(T =

 

25

°

C unless otherwise noted)  

−

50 V  

10

W

@ 10 V  

J

Rating  

Drain

−

to

−

Source Voltage  

Gate

−

to

−

Source Voltage

−

Continuous  

Drain Current  

Symbol  

Value  

50  

Unit  

Vdc  

Vdc  

mA  

P

−

Channel  

3

V

DSS  

V

GS  

20  

Continuous @ T

 

= 25

°

C  

I

130  

520  

A

D

I

Pulsed Drain Current (t

 

≤

10

m

s)  

DM  

p

1

T

o

tal Power Dissipation @ T

 

= 25

°

C  

P

D

225  

mW  

A

Operating and Storage

T

e

mperature  

Range  

T , T  

−

55 to  

150  

°

C  

J

stg  

2

Thermal Resistance

−

Junction

−

to

−

Ambient  

R

556  

260  

°

C/W  

°

C  

q

JA  

Maximum Lead

T

e

mperature for Soldering  

Purposes, for 10 seconds  

T

L

3

SOT

−

23  

CASE 318  

STYLE 21  

Stresses exceeding Maximum Ratings may damage the device. Maximum  

Ratings are stress ratings only. Functional operation above the Recommended  

Operating Conditions is not implied. Extended exposure to stresses above the  

Recommended Operating Conditions may affect device reliability.  

1

2

MARKING DIAGRAM & PIN ASSIGNMENT  

3

Drain  

PD M

G  

G

1

Gate  

2

Source  

PD  

M

G

= Specific Device Code  

= Date Code  

= Pb

−

Free Package  

(*Note: Microdot may be in either location)  

ORDERING INFORMATION  

†

Device  

Package  

Shipping  

BSS84LT1G  

SOT

−

23  

3000 /

T

a

pe & Reel  

(Pb

−

Free)  

BVSS84LT1G  

SOT

−

23  

3000 /

T

a

pe & Reel  

(Pb

−

Free)  

†For information on tape and reel specifications,  

including part orientation and tape sizes, please  

refer to our

T

a

pe and Reel Packaging Specifications  

Brochure, BRD8011/D.  

©

Semiconductor Components Industries, LLC, 2012  

1

Publication Order Number:  

October, 2012

−

Rev. 8  

BSS84LT1/D  

BSS84L, BVSS84L  

ELECTRICAL CHARACTERISTICS

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Drain

−

to

−

Source Breakdown Voltage  

V

−

50  

−

−

Vdc  

(BR)DSS  

(V =

 

0 Vdc, I

 

=

−

250

m

Adc)  

GS  

D

Zero Gate Voltage Drain Current  

(V =

 

−

25 Vdc, V

 

= 0 Vdc)  

I

m

Adc  

DSS  

−

−

−

−

−

−

−

0.1  

−

15  

−

60  

DS  

GS  

(V =

 

−

50 Vdc, V

 

= 0 Vdc)  

DS  

GS  

(V =

 

−

50 Vdc, V

 

= 0 Vdc, T

 

= 125

°

C)  

DS  

GS  

J

Gate

−

Body Leakage Current (V  

=

20 Vdc, V

 

= 0 Vdc)  

I

−

−

10  

nAdc  

GS  

DS  

GSS  

ON CHARACTERISTICS

Gate

−

Source Threaded Voltage (V

 

= V

 

, I

 

=

−

250

m

A)  

V

−

0.9  

−

−

4.7  

−

−

2.0  

10  

Vdc  

W

DS  

GS  

D

GS(th)  

Static Drain

−

to

−

Source On

−

Resistance (V

 

=

−

5.0 Vdc, I

 

=

−

100 mAdc)  

R

GS  

D

DS(on)  

Transfer Admittance (V

 

=

−

25 Vdc, I

 

=

−

100 mAdc, f = 1.0 kHz)  

|y |  

fs  

50  

−

mS  

DS  

D

DYNAMIC CHARACTERISTICS  

Input Capacitance  

Output Capacitance  

Transfer Capacitance  

V

V

= 5.0 Vdc  

= 5.0 Vdc  

= 5.0 Vdc  

C

−

−

−

36  

17  

−

−

−

pF  

ns  

DS  

DS  

DG  

iss  

C

oss  

V

C

6.5  

rss  

SWITCHING CHARACTERISTICS

Turn

−

On Delay Time  

t

−

−

−

−

−

3.6  

9.7  

12  

−

−

−

−

−

d(on)  

Rise Time  

t

r

V

=

−

15 Vdc, I

 

=

−

2.5 Adc,  

D

DD  

R =

 

50

W  

L

Turn

−

Off Delay Time  

Fall Time  

t

d(off)  

t

1.7  

2.2  

f

Gate Charge  

V

=

−

40 Vdc, I

 

=

−

0.5 A,  

V

Q

T

nC  

DD  

D

=

−

10 V  

GS  

SOURCE

−

DRAIN DIODE CHARACTERISTICS  

Continuous Current  

I

−

−

−

−

−

−

−

0.130  

−

0.520  

−

2.2  

A

V

S

Pulsed Current  

I

SM  

Forward Vo

V

GS  

= 0

V

, I

 

=

−

130 mA  

V

SD  

S

1. Pulse

 

T

e

st: Pulse Width

≤

300

m

s, Duty Cycle

≤

2%.  

2. Switching

 

characteristics are independent of operating junction temperature.  

TYPICAL ELECTRICAL CHARACTERISTICS  

0.6  

0.5  

0.4  

0.3  

0.2  

0.5  

25

°

C  

V

DS  

= 10 V  

V

GS  

= -3.5 V  

-3.25 V  

T =

 

25

°

C  

J

0.45  

0.4  

–

5

5

°

C  

150

°

C  

0.35  

0.3  

-3.0 V  

0.25  

0.2  

-2.75 V  

-2.5 V  

0.15  

0.1  

0.1  

0

-2.25 V  

0.05  

0

1

1.5  

2

2.5  

3

3.5  

4

0

1

2

3

4

5

6

7

8

9

10  

-V ,

 

GATE-TO-SOURCE VOLTAGE (VOLTS)  

GS  

-V ,

 

DRAIN-TO-SOURCE VOLTAGE (VOLTS)  

DS  

Figure 1. Transfer Characteristics  

Figure 2. On

−

Region Characteristics  

2

BSS84L, BVSS84L  

TYPICAL ELECTRICAL CHARACTERISTICS  

9

8

7

6

5

4

3

2

7

150

°

C  

V

GS  

= -4.5 V  

V

GS  

= -10 V  

6.5  

6

150

°

C  

5.5  

5

4.5  

4

25

°

C  

25

°

C  

3.5  

3

-55

°

C  

-55

°

C  

2.5  

2

0

0.1  

0.2  

0.3  

0.4  

0.5  

0.6  

0

0.1  

0.2  

0.3  

0.4  

0.5  

0.6  

-I ,

 

DRAIN CURRENT (AMPS)  

D

-I ,

 

DRAIN CURRENT (AMPS)  

D

Figure 4. On

−

Resistance versus Drain Current  

Figure 3. On

−

Resistance versus Drain Current  

2

-8  

-7  

-6  

-5  

-4  

V

= -40 V  

DS  

T =

 

25

°

C  

1.8  

1.6  

1.4  

1.2  

1

V

= -10 V  

GS  

I =

 

-0.52 A  

J

D

V

= -4.5 V  

GS  

I =

 

-0.13 A  

D

I =

 

-0.5 A  

D

-3  

-2  

0.8  

-1  

0

0.6  

-ꢀ55  

-5  

45  

95  

145  

0

500  

1000  

1500  

2000  

T , JUNCTION TEMPERATURE (

°

C)  

J

Q , TOTAL GATE CHARGE (pC)  

T

Figure 6. Gate Charge  

Figure 5. On

−

Resistance Variation with Temperature  

1

T =

 

150

°

C  

J

25

°

C  

-55

°

C  

0.1  

0.01  

0.001  

0

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

-V ,

 

DIODE FORWARD VOLTAGE (VOLTS)  

SD  

Figure 7. Body Diode Forward Voltage  

3

BSS84L, BVSS84L  

PACKAGE DIMENSIONS  

SOT

−

23 (TO

−

236)  

CASE 318

−

08  

ISSUE AP  

NOTES:  

1. DIMENSIONING

 

AND TOLERANCING PER ANSI Y14.5M, 1982.  

2. CONTROLLING

 

DIMENSION: INCH.  

D

3. MAXIMUM

 

LEAD THICKNESS INCLUDES LEAD FINISH  

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

SEE VIEW C  

3

4. DIMENSIONS

 

D AND E DO NOT INCLUDE MOLD FLASH,  

PROTRUSIONS, OR GATE BURRS.  

H

E

MILLIMETERS  

INCHES  

NOM  

0.040  

0.002  

0.018  

0.005  

0.114  

0.051  

0.075  

0.008  

0.021  

0.094  

−−−  

E

DIM  

A

A1  

b

c

D

E

e

L

L1  

MIN  

0.89  

0.01  

0.37  

0.09  

2.80  

1.20  

1.78  

0.10  

0.35  

2.10  

0

°  

NOM  

1.00  

0.06  

0.44  

0.13  

2.90  

1.30  

1.90  

0.20  

0.54  

2.40  

−−−  

MAX  

MIN  

0.035  

0.001  

0.015  

0.003  

0.110  

0.047  

0.070  

0.004  

0.014  

0.083  

0

°  

MAX  

0.044  

0.004  

0.020  

0.007  

0.120  

0.055  

0.081  

0.012  

0.029  

0.104  

10

°  

1.11  

0.10  

0.50  

0.18  

3.04  

1.40  

2.04  

0.30  

0.69  

2.64  

10

°  

c

1

2

b

0.25  

e

q

H

A

E

q

L

STYLE 21:  

A1  

PIN 1.

 

GATE  

L1  

VIEW C  

2. SOURCE  

3. DRAIN  

SOLDERING FOOTPRINT*  

0.95  

0.037  

0.95  

0.037  

2.0  

0.079  

0.9  

0.035  

mm  

inches  

ǒ

Ǔ

SCALE 10:1  

0.8  

0.031  

*For additional information on our Pb

−

Free strategy and soldering  

details, please download the ON Semiconductor Soldering and  

Mounting

T

e

chniques Reference Manual, SOLDERRM/D.  

ON Semiconductor

and  

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).

 

SCILLC reserves the right to make changes without further notice  

to any products herein.

 

SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

 

All  

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.

 

SCILLC does not convey any license under its patent rights  

nor the rights of others.

 

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

 

Should  

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

 

SCILLC is an Equal  

Opportunity/Affirmative Action Employer.

 

This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PUBLICATION ORDERING INFORMATION  

LITERATURE FULFILLMEN

T

:  

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o

ll Free  

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1050  

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BSS84LT1/D  

4