onsemi-BUL42D
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BUL42D
High Speed, High Gain
Bipolar NPN
T
r
ansistor
Integrating an
Antisaturation Network and
a
T
r
ansient Voltage
Suppression Capability
4 AMPERES
700 VOLTS, 75 WATTS
POWER TRANSISTOR
The BUL42D is a state
−
of
−
the
−
art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
•
Free Wheeling Diode Built In
•
Flat DC Current Gain
•
Fast Switching Times and Tight Distribution
•
“Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
MAXIMUM RATINGS
Rating
Symbol
Value
400
700
700
9
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector
−
Emitter Sustaining Voltage
Collector
−
Base Breakdown Voltage
Collector
−
Emitter Breakdown Voltage
Emitter
−
Base Voltage
V
CEO
V
CBO
MARKING
DIAGRAM
V
CES
EBO
V
TO
−
220
CASE 221A
STYLE 1
BUL
42D
YWW
Collector Current
−
Continuous
I
C
4.0
8.0
I
I
CM
Base Current
−
Continuous
I
B
1.0
2.0
Adc
BM
*
T
o
tal Device Dissipation @ T
= 25
_
C
P
75
0.6
Watt
W/
_
C
_
C
C
D
Y
WW
=
Y
e
ar
= Work Week
*Derate above 25
_
C
Operating and Storage
T
e
mperature
TYPICAL GAIN
T , T
J
−
65 to +150
stg
Typical Gain @ I
= 1 A, V
= 2 V
h
h
13
16
−
−
C
CE
FE
FE
Typical Gain @ I
= 0.3 A, V
= 1 V
C
CE
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Device
BUL42D
Package
Shipping
Symbol
Value
Unit
TO
−
220
50 Units/Rail
Thermal Resistance
−
Junction
−
to
−
Case
R
1.66
°
C/W
θ
JC
JA
L
Thermal Resistance
−
Junction
−
to
−
Ambient
R
62.5
260
°
C/W
°
C
θ
Maximum Lead
T
e
mperature for Soldering
T
Purposes: 1/8
″
from Case for 5 seconds
1. Pulse
T
e
st: Pulse Width = 5.0 ms, Duty Cycle = 10%
1
©
Semiconductor Components Industries, LLC, 2006
Publication Order Number:
August, 2006
−
Rev. 2
BUL42D/D
BUL42D
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage
(I =
100 mA, L = 25 mH)
C
V
Vdc
Vdc
CEO(sus)
400
700
9.0
430
780
12
−
−
−
Collector
−
Base Breakdown Voltage
V
V
CBO
EBO
CEO
(I
CBO
= 1 mA)
Emitter
−
Base Breakdown Voltage
(I =
1 mA)
Vdc
EBO
Collector Cutoff Current
(V =
Rated V
, I
= 0)
@ T
= 25
°
C
I
−
−
−
−
100
200
m
Adc
m
Adc
m
Adc
C
@ T
= 125
°
C
CE
CEO
B
C
Collector Cutoff Current
(V =
Rated V
, V
= 0)
@ T
= 25
°
C
I
−
−
−
−
10
200
C
CES
@ T
= 125
°
C
CE
CES
EB
C
Emitter
−
Cutoff Current
(V =
9 Vdc, I
= 0)
I
EBO
−
−
100
EB
C
ON CHARACTERISTICS
Base
−
Emitter Saturation Voltage
V
V
−
−
0.85
0.2
1.2
1.0
Vdc
Vdc
BE(sat)
(I =
1 Adc, I
= 0.2 Adc)
C
B
Collector
−
Emitter Saturation Voltage
(I =
2 Adc, I
= 0.5 Adc)
CE(sat)
C
B
DC Current Gain
(I =
1 Adc, V
= 2 Vdc)
h
FE
−
8.0
10
13
12
−
−
C
CE
(I =
2 Adc, V
= 5 Vdc)
C
CE
DIODE CHARACTERISTICS
Forward Diode Voltage
V
EC
V
(I =
1.0 Adc)
EC
−
0.9
1.5
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 40
m
s)
Turn
−
Off Time
T
off
m
s
m
s
(I =
1.2 Adc, I
= 0.4 A, I
= 0.1 A, V
= 300 V)
4.6
−
−
6.55
0.8
C
B1
B2
CC
Fall Time
T
f
(I =
2.5 Adc, I
= I
= 0.5 A, V
= 150
V
, V
=
−
2 V)
−
C
B1
B2
CC
BE
DYNAMIC SATURATION VOLTAGE
V
−
−
2.8
3.2
−
−
V
@ 1
m
s
@ 3
m
s
@ 1
m
s
@ 3
m
s
@ T
= 25
°
C
C
CE(dsat)
I
I
V
= 400 mA
= 40 mA
@ T
= 125
°
C
C
C
Dynamic Saturation
Voltage:
Determined 1
m
s and
3
m
s respectively after
B1
@ T
= 25
°
C
−
−
0.75
1.3
−
−
C
= 300 V
CC
@ T
= 125
°
C
C
@ T
= 25
°
C
−
−
2.1
4.7
−
−
C
rising I
reaches
I
C
= 1 A
B1
@ T
= 125
°
C
C
90% of final I
I
B1
= 200 mA
B1
@ T
= 25
°
C
−
−
0.35
0.6
−
−
C
V
= 300 V
CC
@ T
= 125
°
C
C
2
BUL42D
TYPICAL STATIC CHARACTERISTICS
100
100
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
25
°
C
J
10
10
T =
−ꢀ20
°
C
J
T =
−ꢀ20
°
C
J
1
1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ V
CE
= 1 V
Figure 2. DC Current Gain @ V
CE
= 5 V
3
2
10
I /I
= 5
C B
T =
25
°
C
J
2 A
1
1.5 A
T =
125
°
C
J
1 A
T =
25
°
C
J
1
0
0.1
T =
−ꢀ20
°
C
J
0.4 A
I =
0.2 A
C
0.01
0.001
0.01
0.1
I ,
BASE CURRENT (AMPS)
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
B
Figure 3. Collector Saturation Region
Figure 4. Collector
−
Emitter Saturation Voltage
100
10
I /I
= 8
C B
I /I
= 10
C B
T =
−ꢀ20
°
C
J
10
1
T =
125
°
C
J
T =
25
°
C
J
1
T =
125
°
C
J
T =
−ꢀ20
°
C
J
T =
25
°
C
J
0.1
0.1
0.01
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector
−
Emitter Saturation Voltage
Figure 6. Collector
−
Emitter Saturation Voltage
3
BUL42D
TYPICAL STATIC CHARACTERISTICS
10
10
I /I
= 5
C B
I /I
= 8
C B
1
1
T =
−ꢀ20
°
C
J
T =
−ꢀ20
°
C
J
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
25
°
C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 7. Base
−
Emitter Saturation Region
Figure 8. Base
−
Emitter Saturation Region
10
10
I /I
= 10
C B
V
EC(V)
= −ꢀ20
°
C
1
1
T =
−ꢀ20
°
C
J
V
EC(V)
= 125
°
C
V
EC(V)
= 25
°
C
T =
125
°
C
J
T =
25
°
C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
REVERSE EMITTER−COLLECTOR CURRENT
Figure 9. Base
−
Emitter Saturation Region
Figure 10. Forward Diode Voltage
4
BUL42D
TYPICAL SWITCHING CHARACTERISTICS
1000
100
900
T =
25
°
C
J
C
ib
f
= 1 MHz
(test)
800
700
600
500
I
= 10 mA
CER
C
ob
10
1
I
= 100 mA
l =
25 mH
CER
C
400
300
T =
25
°
C
C
1
10
100
10
100
1000
10000
V ,
REVERSE VOLTAGE (VOLTS)
R
R
BE
(
W
)
Figure 11. Capacitance
Figure 12. B
VCER
= f(R
BE
)
800
700
600
500
400
300
200
9
6
I
= I
Bon Boff
I
= I
Bon Boff
V
P
= 300 V
CC
= 40
μ
s
V
P
= 300 V
CC
= 40
μ
s
W
W
h
= 10
FE
h
FE
= 5
h
= 5
FE
3
0
T =
125
°
C
T =
25
°
C
T =
125
°
C
T =
25
°
C
J
J
J
100
0
J
h
FE
= 10
0
0.5
1
1.5
2
0
0.5
1
1.5
2
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 13. Resistive Switching, t
on
Figure 14. Resistive Switching, t
off
4
4
3
I
= I
Bon Boff
= 15 V
I
= I
Bon Boff
= 15 V
T =
125
°
C
V
J
CE
V
CE
V =
300 V
Z
V =
300 V
Z
T =
125
°
C
J
3
2
L =
200
μ
H
C
L =
200
μ
H
C
T =
25
°
C
J
T =
25
°
C
J
2
1
1
0
0
0.5
1
1.5
2
0.5
1
1.5
2
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 15. Inductive Storage Time,
t
si
@ h
FE
= 5
Figure 16. Inductive Storage Time,
t
si
@ h
FE
= 10
5
BUL42D
TYPICAL SWITCHING CHARACTERISTICS
250
400
300
I
= I
Bon Boff
= 15 V
T =
125
°
C
T =
25
°
C
J
V
J
CC
V =
300 V
Z
L =
200
μ
H
C
T =
125
°
C
J
200
t
c
T =
25
°
C
J
I
= I
Bon Boff
= 15 V
200
100
150
100
V
CE
t
fi
V =
300 V
Z
L =
200
μ
H
C
0
0.5
1
1.5
2
0.5
1
1.5
2
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 17. Inductive Fall and Cross Over Time,
t
fi
and t
c
@ h
FE
= 5
Figure 18. Inductive Fall Time,
t
fi
@ h
FE
= 10
500
400
5
I
= I
Bon Boff
= 15 V
T =
125
°
C
T =
25
°
C
J
T =
125
°
C
J
J
V
CC
I
= I
Bon Boff
= 15 V
V =
300 V
Z
V
CC
4
3
L =
200
μ
H
C
V =
300 V
Z
L =
200
μ
H
C
I =
1 A
C
300
200
I =
0.3 A
C
T =
25
°
C
J
2
1
0.5
1
1.5
2
3
4
5
6
7
8
9
10
11
12
I ,
COLLECTOR CURRENT (AMPS)
C
h
FE
, FORCED GAIN
Figure 19. Inductive Cross Over Time,
t
c
@ h
FE
= 10
Figure 20. Inductive Storage Time, t
si
300
300
I
= I
Bon Boff
= 15 V
V
CC
V =
300 V
Z
I =
0.3 A
C
I =
0.3 A
C
L =
200
μ
H
C
I =
1 A
C
200
200
I =
1 A
C
I
= I
Bon Boff
= 15 V
V
CC
V =
300 V
Z
T =
125
°
C
J
T =
125
°
C
J
L =
200
μ
H
C
T =
25
°
C
J
T =
25
°
C
J
100
100
3
4
5
6
7
8
9
10
2
4
6
8
10
h
FE
, FORCED GAIN
h
FE
, FORCED GAIN
Figure 21. Inductive Fall Time, t
f
Figure 22. Inductive Cross Over Time, t
c
6
BUL42D
TYPICAL SWITCHING CHARACTERISTICS
440
3
2.5
2
I 1
& 2 = 200 mA
B
di/dt = 10 A/
m
s, T
= 25
°
C
C
I
= I
Bon Boff
= 15 V
420
V
CC
V =
300 V
Z
L =
200
μ
H
400
C
500 mA
380
50 mA
100 mA
360
340
1.5
1
320
300
0
0.5
1
1.5
2
0
0.5
1
1.5
2
I ,
COLLECTOR CURRENT (AMPS)
C
I , FORWARD CURRENT (AMPS)
F
Figure 23. Inductive Storage Time, t
si
Figure 24. Forward Recovery Time, t
fr
10
8
I
C
V
CE
90% I
C
t
fi
t
si
Dyn 1
m
s
Dyn 3
m
s
10% I
C
6
10% V
clamp
V
clamp
0 V
90% I
B
t
c
4
1
m
s
I
B
90% I
B1
I
B
3
m
s
2
0
0
2
4
6
8
TIME
TIME
Figure 25. Dynamic Saturation Voltage
Measurements
Figure 26. Inductive Switching Measurements
7
BUL42D
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
I PEAK
C
100
μ
F
1
μ
F
100
Ω
3 W
MTP8P10
150
Ω
3 W
V
CE
PEAK
V
CE
MTP8P10
R
B1
MPF930
I
B1
MUR105
MJE210
MPF930
I
+10 V
out
I
B
A
I
B2
50
Ω
R
B2
COMMON
V
(BR)CEO(sus)
L = 10 mH
Inductive Switching
L = 200
μ
H
RBSOA
L = 500
μ
H
MTP12N10
150
Ω
3 W
500
μ
F
R
B2
CC
=
∞
= 20 Volts
= 100 mA
R
= 0
= 15 Volts
selected for
R
= 0
= 15 Volts
selected for
B2
B2
V
V
CC
V
CC
R
B1
1
μ
F
I
R
B1
ꢁdesired I
C(pk)
ꢁdesired I
B1
B1
−V
off
V
FRM
V
(1.1 V
) UNLESS
F
OTHERWISE SPECIFIED
FR
t
fr
0.1 V
F
10% I
F
Figure 27. t
fr
Measurement
8
BUL42D
MAXIMUM RATINGS
10
1
5
1
m
s
T =
125
°
C
J
10
m
s
1 ms
5 ms
GAIN
≥
4
L =
500
m
H
4
3
2
dc
C
0.1
V
BE(off)
= −5 V
1
0
V
BE
= 0 V
V
BE(off)
= −1.5 V
500
0.01
10
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
300
400
600
700
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
CE
Figure 28. Forward Bias Safe Operating Area
Figure 29. Reverse Bias Safe Operating Area
1
0.8
0.6
0.4
SECOND BREAKDOWN
DERATING
0.2
0
THERMAL DERATING
100 120
T ,
CASE TEMPERATURE (
°
C)
20
40
60
80
140
160
C
Figure 30. Power Derating
9
BUL42D
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
Figure 28 may be found at any case temperature by using the
breakdown. Safe operating area curves indicate I
−
V
T
C
CE
j(pk)
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn
−
off with the base to emitter junction reverse biased. The
safe level is specified as reverse biased safe operating area
(Figure 29)
. This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
based on T
= 25
°
C; T
is variable depending on power
C
j(pk)
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
> 25
°
C. Second
C
Breakdown limitations do not derate like thermal
limitations. Allowable current at the voltages shown on
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
P
(pk)
R
R
(t) = r(t) R
θ
JC
= 1.66
°
C/W MAX
θ
JC
JC
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
1
t
2
SINGLE PULSE
0.01
0.01
T
− T
= P
C
R (t)
θ
JC
J(pk)
(pk)
DUTY CYCLE, D = t
/t
1 2
0.1
1
10
100
1000
t, TIME (ms)
Figure 31. Thermal Response
10
BUL42D
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AA
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−
T
−
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN
MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
G
H
J
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
2
3
U
H
K
L
L
R
J
N
Q
R
S
T
U
V
Z
V
G
D
N
0.080
2.04
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
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y
,
i
ncluding without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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PUBLICATION ORDERING INFORMATION
Literature Fulfillment
:
JAPAN
: ON Semiconductor, Japan Customer Focus Center
4
−
32
−
1 Nishi
−
Gotanda, Shinagawa
−
ku,
T
o
kyo, Japan 141
−
0031
Phone
: 81
−
3
−
5740
−
2700
Literature Distribution Center for ON Semiconductor
P
.
O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: ONlit@hibbertco.com
Email
: r14525@onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free USA/Canada
BUL42D/D
