onsemi-BUL45D2G
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BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (
150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an h
window. It’s characteristics make it also suitable for PFC application.
FE
COLLECTOR
2, 4
Features
•
Low Base Drive Requirement
•
High Peak DC Current Gain
1
BASE
•
Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
•
Integrated Collector−Emitter Free Wheeling Diode
3
EMITTER
•
Fully Characterized and Guaranteed Dynamic V
CE(sat)
•
“6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
4
•
These Devices are Pb−Free and are RoHS Compliant*
TO−220
CASE 221A
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
400
700
700
12
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
V
CEO
V
CBO
1
2
3
V
CES
EBO
MARKING DIAGRAM
V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
I
5
C
I
I
10
CM
I
2
B
BUL45D2G
AY WW
Base Current − Peak (Note 1)
T
o
tal Device Dissipation
4
BM
P
D
@ T
= 25
_
C
75
0.6
W
W/
_
C
_
C
C
Derate above 25
°
C
Operating and Storage
T
e
mperature
T , T
−65 to +150
J
stg
A
Y
= Assembly Location
=
Y
e
ar
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WW
G
= Work Week
= Pb−Free Package
1. Pulse
T
e
st: Pulse Width = 5 ms, Duty Cycle
≤
10%.
ORDERING INFORMATION
Device
BUL45D2G
Package
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
TO−220
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 8
BUL45D2/D
BUL45D2G
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
1.65
62.5
260
Unit
_
C/W
_
C/W
_
C
Thermal Resistance, Junction−to−Case
R
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient
R
q
Maximum Lead
T
e
mperature for Soldering Purposes 1/8
″
from Case for 5 Seconds
T
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
Vdc
Vdc
CEO(sus)
(I =
100 mA, L = 25 mH)
C
400
700
12
450
910
14.1
−
−
−
Collector−Base Breakdown Voltage
V
V
CBO
EBO
CEO
(I
CBO
= 1 mA)
Emitter−Base Breakdown Voltage
(I =
1 mA)
Vdc
−
EBO
Collector Cutoff Current
(V =
Rated V
, I
= 0)
I
m
Adc
m
Adc
−
100
CE
CEO
B
Collector Cutoff Current
I
CES
(V =
Rated V
, V
= 0)
CE
CES
EB
@ T
= 25
°
C
−
−
−
−
100
500
C
@ T
= 125
°
C
C
(V =
500
V
, V
=
0
)
CE
EB
@ T
= 125
°
C
−
−
−
−
100
100
C
Emitter−Cutoff Current
I
m
Adc
EBO
(V =
10 Vdc, I
= 0)
EB
C
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
V
Vdc
BE(sat)
(I =
0.8 Adc, I
= 80 mAdc)
C
B
@ T
= 25
°
C
−
−
0.8
0.7
1
0.9
C
@ T
= 125
°
C
C
(I =
2 Adc, I
= 0.4 Adc)
C
B
@ T
= 25
°
C
−
−
0.89
0.79
1
0.9
C
@ T
= 125
°
C
C
Collector−Emitter Saturation Voltage
V
Vdc
CE(sat)
(I =
0.8 Adc, I
= 80 mAdc)
C
B
@ T
= 25
°
C
−
−
0.28
0.32
0.4
0.5
C
@ T
= 125
°
C
C
(I =
2 Adc, I
= 0.4 Adc)
C
B
@ T
= 25
°
C
−
−
0.32
0.38
0.5
0.6
C
@ T
= 125
°
C
C
(I =
0.8 Adc, I
= 40 mAdc)
C
B
@ T
= 25
°
C
−
−
0.46
0.62
0.75
1
C
@ T
= 125
°
C
C
DC Current Gain
(I =
0.8 Adc, V
= 1 Vdc)
C
h
FE
−
CE
@ T
= 25
°
C
22
20
34
29
−
−
C
@ T
= 125
°
C
C
(I =
2 Adc, V
= 1 Vdc)
C
CE
@ T
= 25
°
C
10
7
14
9.5
−
−
C
@ T
= 125
°
C
C
DIODE CHARACTERISTICS
Forward Diode Voltage
V
EC
V
(I =
1 Adc)
EC
@ T
= 25
°
C
−
−
1.04
0.7
1.5
−
C
@ T
= 125
°
C
C
(I =
2 Adc)
EC
@ T
= 25
°
C
−
−
1.2
−
1.6
−
C
@ T
= 125
°
C
C
(I =
0.4 Adc)
EC
@ T
= 25
°
C
−
−
0.85
0.62
1.2
−
C
@ T
= 125
°
C
C
2
BUL45D2G
ELECTRICAL CHARACTERISTICS
(continued) (T
= 25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS
Forward Recovery Time (see Figure 27)
T
fr
ns
(I =
1 Adc, di/dt = 10 A/
m
s)
F
@ T
= 25
°
C
−
−
−
330
360
320
−
−
−
C
(I =
2 Adc, di/dt = 10 A/
m
s)
F
@ T
= 25
°
C
C
(I =
0.4 Adc, di/dt = 10 A/
m
s)
F
@ T
= 25
°
C
C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
f
MHz
pF
T
(I =
0.5 Adc, V
= 10 Vdc, f = 1 MHz)
−
−
−
13
50
−
C
CE
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f = 1 MHz)
75
CB
E
Input Capacitance
(V =
8 Vdc)
EB
C
pF
ib
340
500
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1
m
s and
3
m
s respectively after
I
= 1 A
= 100 mA
= 300 V
@ T
= 25
°
C
V
CE(dsat)
−
−
3.7
9.4
−
−
V
V
V
V
@ 1
m
s
@ 3
m
s
@ 1
m
s
@ 3
m
s
C
C
I
V
@ T
= 125
°
C
B1
C
CC
@ T
= 25
°
C
−
−
0.35
2.7
−
−
C
rising I
reaches
@ T
= 125
°
C
B1
C
90% of final I
B1
I
C
= 2 A
= 0.8 A
= 300 V
@ T
= 25
°
C
−
−
3.9
12
−
−
C
I
@ T
= 125
°
C
B1
C
V
CC
@ T
= 25
°
C
−
−
0.4
1.5
−
−
C
@ T
= 125
°
C
C
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
m
s)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
I
= 2 Adc, I
= 0.4 Adc
@ T
= 25
°
C
t
on
t
off
t
on
t
off
−
−
90
105
150
−
ns
m
s
ns
m
s
C
C
B1
C
I
B2
= 1 Adc
@ T
= 125
°
C
C
V
CC
= 300 Vdc
@ T
= 25
°
C
−
−
1.15
1.5
1.3
−
C
@ T
= 125
°
C
C
I
= 2 Adc, I
= 0.4 Adc
@ T
= 25
°
C
−
−
90
110
150
−
B1
C
I
= 0.4 Adc
= 300 Vdc
@ T
= 125
°
C
B2
C
V
CC
@ T
= 25
°
C
2.1
−
−
3.1
2.4
−
C
@ T
= 125
°
C
C
SWITCHING CHARACTERISTICS: Inductive Load
(V
= 300
V
, V
=
1
5
V
, L =
2
00
m
H)
CC
clamp
Fall Time
I
= 1 Adc
= 100 mAdc
= 500 mAdc
@ T
= 25
°
C
t
f
−
−
90
93
150
−
ns
m
s
ns
ns
m
s
ns
C
C
I
I
@ T
= 125
°
C
B1
B2
C
Storage Time
Crossover Time
Fall Time
@ T
= 25
°
C
t
s
t
c
−
−
0.72
1.05
0.9
−
C
@ T
= 125
°
C
C
@ T
= 25
°
C
−
−
95
95
150
−
C
@ T
= 125
°
C
C
I
C
= 2 Adc
= 0.4 Adc
= 0.4 Adc
@ T
= 25
°
C
t
f
−
−
80
105
150
−
C
I
I
@ T
= 125
°
C
B1
C
B2
Storage Time
Crossover Time
@ T
= 25
°
C
t
s
t
c
1.95
−
−
2.9
2.25
−
C
@ T
= 125
°
C
C
@ T
= 25
°
C
−
−
225
450
300
−
C
@ T
= 125
°
C
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
BUL45D2G
TYPICAL STATIC CHARACTERISTICS
100
80
60
40
20
0
100
V
CE
= 1 V
V
CE
= 5 V
T =
125
°
C
T =
125
°
C
J
80
60
40
20
0
J
T =
25
°
C
J
T =
25
°
C
J
T =
-ꢀ20
°
C
J
T =
-ꢀ20
°
C
J
0.001
0.01
0.1
1
10
10
10
0.001
0.01
0.1
1
10
10
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
4
3
2
10
T =
25
°
C
J
I /I
= 5
B
C
T =
25
°
C
J
1
T =
125
°
C
J
5 A
3 A
1
0
2 A
4 A
T =
-ꢀ20
°
C
J
1 A
I =
500 mA
C
0.1
0.001
0.001
0.01
0.1
I ,
BASE CURRENT (AMPS)
1
0.01
0.1
1
I ,
COLLECTOR CURRENT (AMPS)
C
B
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
10
10
I /I
= 10
B
I /I
= 20
C B
C
1
1
T =
125
°
C
J
T =
25
°
C
J
T =
-ꢀ20
°
C
T =
-ꢀ20
°
C
J
J
T =
125
°
C
J
T =
25
°
C
J
0.1
0.001
0.1
0.001
0.01
0.1
1
0.01
0.1
1
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
4
BUL45D2G
TYPICAL STATIC CHARACTERISTICS
10
10
I /I
= 5
C B
I /I
= 10
C B
T =
25
°
C
J
T =
-ꢀ20
°
C
J
1
1
T =
-ꢀ20
°
C
J
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 7. Base−Emitter Saturation Region
Figure 8. Base−Emitter Saturation Region
10
10
I /I
= 20
C B
25
°
C
1
1
T =
-ꢀ20
°
C
J
125
°
C
T =
125
°
C
J
T =
25
°
C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Region
Figure 10. Forward Diode Voltage
1000
100
1000
900
800
700
600
T =
25
°
C
(test)
T =
25
°
C
J
J
C
(pF)
ib
BVCER @ 10 mA
f
= 1 MHz
C
(pF)
ob
10
1
BVCER(sus) @ 200 mA
500
400
1
10
100
10
100
(
W
)
1000
V ,
REVERSE VOLTAGE (VOLTS)
R
R
BE
Figure 11. Capacitance
Figure 12. BVCER = f(ICER)
5
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
5
1000
800
600
400
I =
I
Bon Boff
I
= I
T =
125
°
C
T =
25
°
C
J
Bon Boff
J
V
CC
= 300 V
V
= 300 V
I /I
= 10
C B
CC
4
3
2
PW = 20
m
s
PW = 20
m
s
I /I
= 10
C B
I /I
= 5
B
C
I /I
= 5
B
C
1
0
T =
125
°
C
T =
25
°
C
J
J
200
0
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
4
4
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 14. Resistive Switch Time, t
off
Figure 13. Resistive Switch Time, t
on
5
4
3
2
4
3
2
I
= I
Bon Boff
= 15 V
I
= I
Bon Boff
= 15 V
I /I
= 5
B
C
V
CC
V
CC
V =
300 V
Z
V =
300 V
Z
L =
200
m
H
C
L =
200
m
H
C
1
0
1
0
T =
125
°
C
J
T =
125
°
C
J
T =
25
°
C
J
T =
25
°
C
J
0
1
2
3
4
0
1
2
3
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 16. Inductive Storage Time,
Figure 15. Inductive Storage Time,
t
si
@ I
C
/I
B
= 10
t
si
@ I
C
/I
B
= 5
600
500
400
300
200
400
300
200
I
= I
Bon Boff
= 15 V
T =
125
°
C
J
I
= I
Boff Bon
= 15 V
V
CC
T =
25
°
C
J
V
CC
V =
300 V
Z
V =
300 V
Z
t
c
L =
200
m
H
C
L =
200
m
H
C
100
0
100
0
T =
125
°
C
J
T =
25
°
C
J
t
fi
0
1
2
3
0
1
2
3
4
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 17. Inductive Switching,
t
c
& t
fi
@ I
C
/I
B
= 5
Figure 18. Inductive Switching,
t
fi
@ I
C
/I
B
= 10
6
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
1500
1000
5
I
= I
Bon Boff
= 15 V
T =
125
°
C
T =
25
°
C
J
I
= I
Boff Bon
= 15 V
T =
125
°
C
T =
25
°
C
J
J
J
V
CC
V
CC
V =
300 V
Z
V =
300 V
Z
I =
1 A
C
L =
200
m
H
C
L =
200
m
H
C
4
500
3
2
I =
2 A
C
0
0
1
2
3
4
0
5
10
15
20
I ,
COLLECTOR CURRENT (AMPS)
C
h
FE
, FORCED GAIN
Figure 19. Inductive Switching,
t
c
@ I
C
/I
B
= 10
Figure 20. Inductive Storage Time
450
350
250
1400
1200
1000
800
I
= I
Boff Bon
= 15 V
T =
125
°
C
T =
25
°
C
J
I
= I
Bon Boff
= 15 V
T =
125
°
C
T =
25
°
C
J
J
J
V
CC
V
CC
V =
300 V
Z
V =
300 V
Z
I =
1 A
C
L =
200
m
H
C
L =
200
m
H
C
I =
2 A
C
600
400
150
50
200
0
I =
2 A
C
I =
1 A
C
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
h ,
FORCED GAIN
FE
12
14
16
18
20
h
FE
, FORCED GAIN
Figure 21. Inductive Fall Time
Figure 22. Inductive Crossover Time
3000
2000
360
340
I =
I
B1 B2
I
= I
Bon Boff
= 15 V
V
dI/dt = 10 A/
m
s
T =
25
°
C
CC
V =
300 V
Z
C
L =
200
m
H
C
I =
50 mA
B
I =
100 mA
B
1000
320
300
I =
200 mA
B
I =
500 mA
B
I =
1 A
B
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
I ,
COLLECTOR CURRENT (AMPS)
C
I , FORWARD CURRENT (AMP)
F
Figure 23. Inductive Storage Time, t
si
Figure 24. Forward Recovery Time t
fr
7
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
V
CE
dyn 1
m
s
dyn 3
m
s
0 V
90% I
B
1
m
s
I
B
3
m
s
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
10
9
I
C
90% I
C
8
t
fi
t
si
7
6
10% I
C
V
clamp
10% V
clamp
5
t
c
4
3
I
B
90% I
B1
2
1
0
0
1
2
3
4
5
6
8
7
TIME
Figure 26. Inductive Switching Measurements
V
FRM
V
(1.1 V
unless
F
otherwise specified)
FR
V
F
V
F
t
fr
0.1 V
F
0
I
F
10% I
F
0
2
4
6
8
10
Figure 27. t
fr
Measurements
8
BUL45D2G
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
I PEAK
C
100
m
F
1
m
F
100
W
3 W
MTP8P10
150
W
3 W
V
CE
PEAK
V
CE
MTP8P10
R
MPF930
B1
I 1
B
MUR105
MJE210
MPF930
I
+10 V
out
I
B
A
I 2
B
50
W
R
B2
COMMON
MTP12N10
150
W
3 W
V
(BR)CEO(sus)
L = 10 mH
Inductive Switching
L = 200
m
H
RBSOA
L = 500
m
H
500
m
F
R
=
∞
= 20 Volts
= 100 mA
R
= 0
= 15 Volts
selected for
R
= 0
= 15 Volts
selected for
B2
CC
B2
B2
V
V
CC
V
CC
1
m
F
I
R
desired I
R
B1
C(pk)
B1
-V
off
desired I
B1
B1
TYPICAL CHARACTERISTICS
100
6
T
≤
125
°
C
C
5
GAIN
≥
5
L =
2 mH
1
m
s
10
1
C
10
m
s
1 ms
4
3
2
5 ms
DC
-5 V
0.1
1
0
0 V
-1.5 V
600
0.01
10
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
200
300
400
500
700
800
V
CE
V ,
COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 28. Forward Bias Safe Operating Area
Figure 29. Reverse Bias Safe Operating Area
9
BUL45D2G
TYPICAL CHARACTERISTICS
1
0.8
0.6
SECOND BREAKDOWN
DERATING
THERMAL DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
T ,
CASE TEMPERATURE (
°
C)
C
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
breakdown. Safe operating area curves indicate I
−V
T
may be calculated from the data in Figur
e
3
1. At any
C
CE
J(pk)
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
based on T
= 25
°
C; T
is variable depending on power
level. Second breakdown pulse limits are valid for duty
C
J(pk)
cycles to 10% but must be derated when T
> 25
°
C. Second
C
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
TYPICAL THERMAL RESPONSE
1
0.5
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
q
JC
q
q
JC
JC
0.1
0.05
= 2.5
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
1
t
2
SINGLE PULSE
T
– T
= P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 31. Typical Thermal Response (Z
q
JC
(t)) for BUL45D2
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
STYLE 2:
PIN 1.
BASE
2. EMITTER
STYLE 3:
STYLE 4:
PIN 1.
MAIN TERMINAL 1
PIN 1.
CATHODE
2. ANODE
3. GATE
2. MAIN
TERMINAL 2
3. GATE
3. EMITTER
3. COLLECTOR
4. EMITTER
4. COLLECTOR
4. ANODE
4. MAIN
TERMINAL 2
STYLE 5:
PIN 1.
GATE
STYLE 6:
PIN 1.
ANODE
STYLE 7:
STYLE 8:
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. ANODE
2. DRAIN
3. SOURCE
4. DRAIN
2. CATHODE
3. ANODE
3. CATHODE
4. ANODE
3. EXTERNAL
TRIP/DELAY
4. ANODE
4. CATHODE
STYLE 9:
PIN 1.
GATE
STYLE 10:
PIN 1.
GATE
STYLE 11:
STYLE 12:
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
2. COLLECTOR
3. EMITTER
2. SOURCE
3. DRAIN
4. COLLECTOR
4. SOURCE
4. SOURCE
4. NOT
CONNECTED
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
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DOCUMENT NUMBER:
DESCRIPTION:
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TO
−
220
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