onsemi-CPH6341-TL-W

Part #onsemi-CPH6341-TL-W
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onsemi-CPH6341-TL-W
Ordering number : ENA1084B  
CPH6341  
P-Channel Power MOSFET  
–
–
Ω
30V, 5A,
 
59m ,
 
Single CPH6  
Features  
•
Low ON-resistance  
•
•
•
High-speed switching  
4V drive  
Protection diode in  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
–
–
30  
Unit  
V
V
V
DSS  
GSS  
±20  
V
I
I
–
–
5  
A
D
Drain Current (Pulse)  
PW 10 s,
 
duty cycle
 
1%  
–
–
20  
A
≤
m
≤
DP  
Allowable Power Dissipation  
Channel
T
e
mperature  
Storage
T
e
mperature  
P
When mounted on ceramic substrate (900mm

2

0.8mm)  
1.6  
W
°C  
°C  
×
D
T
c
h  
150  
T
s
tg  
–
–
55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: CPH6  
7018A-003  
• JEITA, JEDEC  
: SC-74, SO
T
–
26, SO
T
–
457  
• Minimum Packing Quantity
 
: 3,000 pcs./reel  
2.9  
0.15  
0.05  
CPH6341-TL-E  
CPH6341-TL-W  
6
5
4
3
Packing
T
y
pe: TL  
Marking  
TL  
1
2
0.95  
1 : Drain  
2 : Drain  
3 : Gate  
0.4  
Electrical Connection  
4 : Source  
5 : Drain  
6 : Drain  
1, 2, 5, 6  
CPH6  
3
4
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2014  
January, 2014  
11614HK TC-00002818/61312 TKIM/30508PE TIIM
 
No. A1084-1/6  

CPH6341  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–
–
30  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=
–
–
1mA, V
 
=0V  
V
m
A  
m
A  
V
(BR)DSS  
D
GS  
=
–
–
30
V
, V
 
=
0V  
I
I
V
V
V
V
–
–
1  
DSS  
DS  
GS  
DS  
DS  
GS  
=±16
V
, V
 
=
0V  
DS  
±10  
GSS  
V
(off)  
=
–
–
10
V
, I
 
=
–
–
1mA  
–
–
1.2  
2.8  
–
–
2.6  
GS  
|
yfs
|  
D
Forward Transfer Admittance  
=
–
–
10
V
, I
 
=
–
–
3A  
4.8  
45  
S
D
R
R
R
(on)1  
(on)2  
(on)3  
I
I
I
=
–
–
3A, V
 
=
–
–
10V  
GS  
59  
100  
115  
m
Ω  
m
Ω  
m
Ω  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
D
D
D
Static Drain-to-Source On-State Resistance  
=
–
–
1.5A, V
 
=
–
–
4.5V  
GS  
71  
=
–
–
1.5 A, V
 
=
–
–
4V  
GS  
82  
Input Capacitance  
Ciss  
430  
105  
75  
Output Capacitance  
Reverse
T
r
ansfer Capacitance  
T
u
rn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=
–
–
10
V
,
f
=1MHz  
DS  
t (on)  
d
7.5  
26  
t
r
See specified
T
e
st Circuit.  
T
u
rn-OFF Delay Time  
Fall Time  
t (off)  
d
45  
t
35  
f
T
o
tal Gate Charge  
Qg  
10  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
V
=
–
–
1
5
V
, V
 
=
–
–
1
0
V
, I
 
=
–
–
5
A  
DS GS  
2.0  
2.5  
–
–
0.87  
D
V
I =
–
–
 
5
A, V
 
=0V  
GS  
–
–
1.2  
SD  
S
Switching Time
T
e
st Circuit  
V
=
–
–
15V  
DD  
V
IN  
0V  
–
–
10V  
I
=
–
–
3A  
D
V
IN  
R =5
Ω  
L
D
V
OUT  
PW=10
m
s  
D.C.
≤
1%  
G
CPH6341  
P
.
G  
50
Ω  
S
Ordering Information  
Device  
Package  
CPH6  
Shipping  
3,000pcs./reel  
memo  
CPH6341-TL-E  
Pb-Free  
CPH6341-TL-W  
Pb-Free and Halogen Free  
No. A1084-2/6  

CPH6341  
I
— V  
I
— V  
GS  
D
DS  
D
–
–
5.0  
–
–
4.5  
–
–
4.0  
–
–
3.5  
–
–
3.0  
–
–
2.5  
–
–
2.0  
–
–
1.5  
–
–
1.0  
–
–
6  
–
–
5  
–
–
4  
–
–
3  
–
–
2  
V
=
–
–
10V  
DS  
–
–
1  
0
–
–
0.5  
0
0
–
–
0.1
–
–
0.2
–
–
0.3
–
–
0.4
–
–
0.5
–
–
0.6
–
–
0.7
–
–
0.8
–
–
0.9
–
–
1.0  
0
–
–
0.5  
–
–
1.0  
–
–
1.5  
–
–
2.0  
–
–
2.5  
–
–
3.0  
–
–
3.5  
–
–
4.0  
Drain-to-Source
V
o
ltage, V  
— V  
IT13379  
Gate-to-Source
V
o
ltage, V  
— V  
IT13380  
DS  
GS  
R
(on)
–
– V  
R
DS  
(on)
–
– Ta  
DS  
GS  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Ta=25
°
C  
I =
 
–
–
1.5A  
D
–
–
3.0A  
60  
60  
40  
40  
20  
0
20  
0
0
–
–
2  
–
–
4  
–
–
6  
–
–
8  
–
–
10  
–
–
12  
–
–
14  
–
–
16  
–
–
60
–
–
40
–
–
20  
0
20  
40  
60  
80 100
 
120 140 160  
Ambient Temperature, Ta
 
–
–
°
C  
Gate-to-Source
V
o
ltage, V  
— V  
IT13381  
IT13382  
GS  
|
y
fs
|
–
– I  
I
— V  
S SD  
D
–
–
10  
7
10  
7
V
=
–
–
10V  
V
=0V  
DS  
GS  
5
5
3
2
3
2
–
–
1.0  
7
5
1.0  
7
3
2
5
–
–
0.1  
7
5
3
2
3
2
0.1  
–
–
0.01  
–
–
0.01  
–
–
0.2  
2
3
5
7
2
3
5
7
2
3
5
7
–
–
0.4  
–
–
0.6  
–
–
0.8  
–
–
1.0  
–
–
1.2  
–
–
0.1  
–
–
1.0  
–
–
10  
Drain Current, I
 
–
– A  
D
IT13383  
Diode Forward
V
o
ltage, V
 
–
– V  
SD  
IT13384  
Ciss, Coss, Crss
–
– V  
SW Time
 
–
– I  
DS  
D
2
1000  
V
V
=
–
–
15V  
=
–
–
10V  
GS  
f=1MHz  
DD  
7
5
100  
7
5
3
2
3
2
10  
100  
t (on)  
d
7
5
7
5
3
2
3
2
3
5
7
2
3
5
7
0
–
–
5  
–
–
10  
–
–
15  
–
–
20  
–
–
25  
–
–
30  
IT13386  
–
–
0.1  
–
–
1.0  
–
–
10  
Drain Current, I
 
–
– A  
IT13385  
Drain-to-Source
V
o
ltage, V  
— V  
D
DS  
No. A1084-3/6  

CPH6341  
V
—
Q
g  
A S O  
GS  
–
–
10  
–
–
9  
–
–
8  
–
–
7  
–
–
6  
–
–
5  
–
–
4  
–
–
3  
–
–
2  
5
V
=
–
–
15V  
DS  
3
2
I
=
–
–
20A  
PW
≤
10
m
s  
DP  
I =
 
–
–
5A  
D
–
–
10  
7
5
I =
 
–
–
5A  
D
3
2
–
–
1.0  
7
5
3
2
Operation in this  
area is limited by R
 
(on).  
DS  
–
–
0.1  
7
5
Ta=25
°
C  
Single pulse  
3
2
–
–
1  
0
When mounted on ceramic substrate  
(900mm

2

✕
0.8mm)  
–
–
0.01  
–
–
0.01  
0
1
2
3
4
5
6
7
8
9
10  
2
3
5
7
2
3
5
7
–
–
1.0  
2
3
5
7
–
–
10  
2
3
5 7  
–
–
0.1  
Total Gate Charge, Qg
 
–
–
n
C  
IT13387  
Drain-to-Source
V
o
ltage, V  
— V  
IT13388  
DS  
P
— Ta  
D
2.0  
When mounted on ceramic substrate  
(900mm

2

✕
0.8mm)  
1.6  
1.5  
1.0  
0.5  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta
 
–
–
°
C  
IT13389  
No. A1084-4/6  

CPH6341  
Outline Drawing  
Land Pattern Example  
CPH6341-TL-E, CPH6341-TL-W  
Mass (g)
 
Unit  
Unit: mm  
0.015  
mm  
* For reference  
0.6  
0.95  
0.95  
No. A1084-5/6  

CPH6341  
Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity of  
highly charged objects.  
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warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals”
 
must be validated for each customer application by customer’s technical  
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
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PS No. A1084-6/6