onsemi-CPH6350-TL-W

Order

i

n

g number : EN

A

1

529B  

CPH6350  

P-Channel Power MOSFET  

–

–

Ω

30V, 6A,

 

43m ,

 

Single CPH6  

F

e

atures  

•

4V drive  

•

Low ON-resistance  

•

Protection diode in  

Spec

i

fi

c

at

i

o

ns  

at Ta=25°C  

A

b

so

l

u

te Maximum Rat

i

n

gs  

Pa

r

a

meter  

Dr

a

i

n

t

o Source

V

o

l

t

age  

Gate to Source

V

o

l

t

age  

Dr

a

i

n

C

urrent

(

D

C

)  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

–

–

30  

Unit  

V

V

D

S

S  

V

±20  

V

GSS  

I

— 6  

A

D

Dr

a

i

n

C

urrent

(

P

u

l

s

e)  

All

o

wab

l

e

P

ower

D

i

s

s

i

p

at

i

o

n  

Channel

T

e

mperature  

Storage

T

e

mperature  

I

PW 10 s,

 

duty cyc

l

e

 

1

%  

When mounted on ceram

i

c

s

ubstrate

(

9

00mm

2

0.8mm)  

–

–

24  

A

≤

μ

≤

DP  

P

1.6  

W

°C  

°C  

×

D

T

c

h  

150  

T

s

tg  

–

–

55 to +150  

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  

Package

D

i

m

ens

i

o

ns  

unit : mm (typ)  

Order

i

n

g &

 

Package

I

n

f

o

rmat

i

o

n  

D

e

v

i

c

e  

Package  

Sh

i

p

p

i

n

g  

memo  

7018A-003  

CPH6  

3,000pcs./  

r

e

el  

CPH6350-T

L

–

E  

Pb-Free  

SC-74, SO

T

–

26, SO

T

–

457  

Pb-Free  

and  

H

a

l

o

gen Free  

2.9  

0.15  

0.05  

CPH6350-T

L

–

E  

CPH6350-T

L

–

W  

CPH6  

3,000pcs./  

r

e

el  

CPH6350-T

L

–

W  

SC-74, SO

T

–

26, SO

T

–

457  

6

5

4

3

Pack

i

n

g

T

y

p

e:

T

L  

M

a

rk

i

n

g  

1

2

0.95  

1 : Drain  

2 : Drain  

3 : Gate  

0.4  

TL  

4 : Source  

5 : Drain  

6 : Drain  

El

e

ctr

i

c

al Connect

i

o

n  

1, 2, 5, 6  

CPH6  

3

4

Semiconductor Components Industries, LLC, 2013  

August, 2013  

82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052

 

No. A1529-1/6  

CPH6350  

at Ta=25°C  

El

e

ctr

i

c

al Character

i

s

t

i

c

s  

Rat

i

n

gs  

typ  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Unit  

m

i

n  

–

–

30  

max  

Drain to Source Breakdown Voltage  

Zero-Gate Voltage Drain Current  

Gate to Source Leakage Current  

Cutoff Voltage  

V

I

=

–

–

1mA, V

 

=0V  

V

μ

A  

μ

A  

V

(BR)DSS  

D

GS  

=

–

–

30V, V

 

=0V  

I

I

V

V

V

V

— 1  

DSS  

DS  

GS  

DS  

DS  

GS  

=±16

V

, V

 

=

0V  

DS  

±10  

GSS  

V

(off)  

GS  

=

–

–

10V, I

 

=

–

–

1mA  

–

–

1.2  

–

–

2.6  

D

Forward Transfer Admittance  

|

yfs

|  

=

–

–

10V, I

 

=

–

–

3A  

5.4  

S

D

R

R

R

(on)1  

(on)2  

(on)3  

I

I

I

=

–

–

3A, V

 

=

–

–

10V  

GS  

33  

58  

43  

82  

86  

m

Ω  

m

Ω  

m

Ω  

pF  

pF  

pF  

ns  

DS  

DS  

DS  

D

D

D

Static Drain to Source On-State Resistance  

=

–

–

1.5A, V

 

=

–

–

4.5V  

GS  

=

–

–

1.5A, V

 

=

–

–

4V  

GS  

61  

I

n

put Capac

i

t

ance  

C

i

s

s  

600  

145  

110  

7.4  

27  

Output Capac

i

t

ance  

Reverse

T

r

a

ns

f

e

r Capac

i

t

ance  

T

u

rn-ON De

l

a

y

T

i

m

e  

Ri

s

e

T

i

m

e  

Coss  

Crss  

V

=

–

–

10

V

,

f

=1MHz  

DS  

t

t

t

t

(

o

n)  

d

r

ns  

See spec

i

fi

e

d

T

e

st C

i

r

c

u

i

t

.  

T

u

rn-OFF De

l

a

y

T

i

m

e  

Fa

l

l Ti

m

e  

(

o

f

f)  

62  

ns  

d

f

45  

ns  

T

o

tal Gate Cha

r

g

e  

Qg  

13  

nC  

nC  

nC  

V

Gate to Source Charge  

Gate to Dra

i

n “Mill

e

r

” Charge  

Di

o

de Forward

V

o

l

t

age  

Qgs  

Qgd  

V

=

–

–

15

V

, V

 

=

–

–

10

V

, I

 

=

–

–

6A  

GS  

1.8  

3.2  

–

–

0.87  

DS  

D

V

SD  

I =

–

–

6

A

,

 

V

=

0V  

S GS  

–

–

1.2  

Sw

i

t

ch

i

n

g

T

i

m

e

T

e

st C

i

r

c

u

i

t  

V =

 

–

–

15V  

DD  

V

IN  

0V  

–

–

10V  

I

= –

–

3A  

D

V

IN  

R =5

Ω  

L

D

V

OUT  

P

W

=10

μ

s  

D.C.

≤

1%  

G

CPH6350  

P. G  

50

Ω  

S

No. A1529-2/6  

CPH6350  

I

D

— V  

DS  

I

— V  

D GS  

–

–

3.0  

–

–

2.5  

–

–

2.0  

–

–

1.5  

–

–

1.0  

–

–

9  

–

–

8  

–

–

7  

–

–

6  

–

–

5  

–

–

4  

–

–

3  

–

–

2  

V

DS  

=

–

–

10V  

–

–

0.5  

0

–

–

1  

0

0

–

–

0.1

–

–

0.2

–

–

0.3

–

–

0.4

–

–

0.5

–

–

0.6

–

–

0.7

–

–

0.8

–

–

0.9

–

–

1.0  

0

–

–

0.5  

–

–

1.0  

–

–

1.5  

–

–

2.0  

–

–

2.5  

–

–

3.0  

–

–

3.5  

–

–

4.0  

Drain to Source

V

o

ltage, V  

DS  

— V  

IT14855  

Gate to Source

V

o

ltage, V  

GS  

— V  

IT14856  

R

(

o

n)

–

– V  

R

(

o

n)

–

–

T

a  

DS  

GS  

DS  

200  

180  

160  

140  

120  

100  

80  

100  

90  

80  

70  

60  

50  

40  

30  

Ta=25

°

C  

I

=

–

–

1.5A  

D

–

–

3.0A  

60  

40  

20  

10  

20  

0

0

–

–

2  

–

–

4  

–

–

6  

–

–

8  

–

–

10  

–

–

12  

–

–

14  

–

–

16  

–

–

60

–

–

40

–

–

20  

0

20  

40  

60  

80 100

 

120 140 160  

Gate to Source

V

o

ltage, V  

GS  

— V  

IT14857  

Ambient Temperature, Ta

 

–

–

°

C  

IT14858  

|

y

fs

|

— I  

I

— V  

D

S

S

D  

2

2

V

=0V  

V

=

–

–

10V  

GS  

DS  

–

–

10  

7

5

3

2

10  

7

5

–

–

1.0  

3

2

7

5

3

2

1.0  

7

–

–

0.1  

7

5

5

3

2

3

2

–

–

0.01  

7

5

3

2

0.1  

7

–

–

0.001  

2

3

5

7

2

3

5

7

–

–

1.0  

2

3

5

7

–

–

0.2  

–

–

0.4  

–

–

0.6  

–

–

0.8  

–

–

1.0  

–

–

1.2  

IT14860  

–

–

0.01  

–

–

0.1  

Drain Current, I

 

–

– A  

IT14859  

Diode Forward

V

o

ltage, V

 

–

– V  

SD  

D

SW

T

i

m

e

 

–

– I  

C

i

s

s, Coss, Crss

–

– V  

D

DS  

100  

2

f=1MHz  

t

d(off)  

7

5

1000  

t

f

7

5

3

2

3

2

10  

7

5

100  

V

V

=

–

–

15V  

=

–

–

10V  

7

5

DD  

GS  

3

2

3

5

7

2

3

5

7

2

0

–

–

5  

–

–

10  

–

–

15  

–

–

20  

–

–

25  

–

–

30  

IT14862  

–

–

0.1  

–

–

1.0  

–

–

10  

IT14861  

Drain Current, I

 

–

– A  

Drain to Source

V

o

ltage, V

 

–

– V  

DS  

D

No. A1529-3/6  

CPH6350  

A S

 

O  

=

–

–

24A (

PW

≤

10

μ

s

)  

V

GS  

—

Q

g  

5

–

–

10  

–

–

9  

–

–

8  

–

–

7  

–

–

6  

–

–

5  

–

–

4  

–

–

3  

–

–

2  

V

I

=

–

–

10V  

I

DS  

=

–

–

6A  

DP  

3

2

D

–

–

10  

7

5

I =

 

–

–

6A  

D

3

2

–

–

1.0  

7

5

3

2

Operation in this  

area is limited by R

 

(on).  

DS  

–

–

0.1  

7

5

Ta=25

°

C  

3

2

–

–

1  

0

Single pulse  

When mounted on ceramic substrate (900mm

2

×

0.8mm)  

–

–

0.01  

–

–

0.01  

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5 7  

0

1

2

3

4

5

6

7

8

9

10 11 12 13  

IT14863  

–

–

0.1  

–

–

1.0  

–

–

10  

Drain to Source

V

o

ltage, V  

— V  

IT14864  

Total Gate Charge, Qg

 

–

–

n

C  

DS  

P

—

T

a  

D

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

When mounted on ceramic substrate  

(900mm

2

×

0.8mm)  

0.2  

0

0

20  

40  

60  

80  

100  

120  

140  

160  

Ambient Temperature, Ta

 

–

–

°

C  

IT14865  

No. A1529-4/6  

CPH6350  

Out

l

i

n

e Draw

i

n

g  

L

a

nd Pattern Examp

l

e  

CPH6350-TL-E, CPH6350-TL-W  

M

a

ss

(

g

)

 

Un

i

t  

Unit: mm  

0.015  

mm  

* For reference  

0.6  

0.95  

0.95  

No. A1529-5/6  

CPH6350  

Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of  

highly charged objects.  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

must be validated for each customer application by customer’s technical  

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  

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PS No. A1529-6/6