onsemi-D45VH10G
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D44VH10ꢀ(NPN),
D45VH10 (PNP)
Complementary Silicon
Power
T
r
ansistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits.
15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80
V
,
8
3 W
Features
•
Fast Switching
•
Key Parameters Specified @ 100
°
C
•
Low Collector−Emitter Saturation
V
o
ltage
•
Complementary Pairs Simplify Circuit Designs
•
These Devices are Pb−Free and are RoHS Compliant*
PNP
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
1
1
MAXIMUM RATINGS
BASE
BASE
Rating
Symbol
Value
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
EMITTER 3
EMITTER 3
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter Base Voltage
V
CEO
V
CEV
100
7.0
15
4
V
EB
Collector Current − Continuous
T
o
tal Power Dissipation
I
C
TO−220
CASE 221A
STYLE 1
I
20
CM
P
D
@ T
= 25
°
C
83
0.67
W
W/
°
C
C
1
2
3
Derate above 25
°
C
T , T
−
5
5 to 150
°
C
Operating and Storage Junction
T
e
mperature Range
J
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse
Width
≤
6.0 ms, Duty Cycle
≤
50%.
D4xVH10G
AYWW
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.5
Unit
°
C/W
°
C/W
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
q
JC
JA
L
R
62.5
275
q
x
= 4 or 5
T
Maximum Lead
T
e
mperature for Soldering
A
Y
= Assembly Location
=
Y
e
ar
Purposes: 1/8
″
from Case for 5 Seconds
WW =
Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
D44VH10G
TO−220
50 Units/Rail
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
D45VH10G
TO−220
(Pb−Free)
50 Units/Rail
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 8
D44VH/D
D44VH10 (NPN), D45VH10 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
25 mAdc, I
= 0)
80
−
−
C
B
Collector−Emitter Cutoff Current
I
m
Adc
CEV
(V =
Rated V
, V
, V
= 4.0 Vdc)
= 4.0 Vdc, T
= 100
°
C)
CE
CEV BE(off)
−
−
−
−
10
100
(V =
Rated V
CE
CEV BE(off)
C
Emitter Base Cutoff Current
(V =
7.0 Vdc, I
= 0)
I
m
Adc
EBO
−
−
10
EB
C
DC Current Gain
h
FE
−
(I =
2.0 Adc, V
= 1.0 Vdc)
35
20
−
−
−
−
C
CE
(I =
4.0 Adc, V
= 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
8.0 Adc, I
= 0.4 Adc)
V
Vdc
CE(sat)
C
B
D44VH10
(I =
8.0 Adc, I
= 0.8 Adc)
−
−
−
−
0.4
1.0
C
B
D45VH10
(I =
15 Adc, I
= 3.0 Adc, T
= 100
°
C)
C
B
C
D44VH10
D45VH10
−
−
−
−
0.8
1.5
Base−Emitter Saturation Voltage
(I =
8.0 Adc, I
= 0.4 Adc)
V
Vdc
BE(sat)
C
B
D44VH10
(I =
8.0 Adc, I
= 0.8 Adc)
−
−
−
−
−
−
−
−
1.2
1.0
1.1
1.5
C
B
D45VH10
(I =
8.0 Adc, I
= 0.4 Adc, T
= 100
°
C)
C
B
C
D44VH10
(I =
8.0 Adc, I
= 0.8 Adc, T
= 100
°
C)
C
B
C
D45VH10
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
f
MHz
pF
T
(I =
0.1 Adc, V
= 10 Vdc, f = 20 MHz)
−
50
−
C
CE
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f
= 1.0 MHz)
D44VH10
D45VH10
CB
C
test
−
−
120
275
−
−
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
−
−
−
−
50
250
700
90
ns
d
Rise Time
t
r
(V =
20 Vdc, I
= 8.0 Adc, I
= I
= 0.8 Adc)
CC
C
B1
B2
Storage Time
Fall Time
s
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
2
D44VH10 (NPN), D45VH10 (PNP)
1000
1000
V =
1 V
CE
V
CE
= 1 V
25
°
C
125
°
C
−40
°
C
125
°
C
25
°
C
100
100
−40
°
C
10
10
0.01
0.1
1
10
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 1. D44VH10 DC Current Gain
Figure 2. D45VH10 DC Current Gain
1000
1000
V
CE
= 5 V
V
CE
= 5 V
25
°
C
125
°
C
125
°
C
25
°
C
−40
°
C
100
100
−40
°
C
10
10
0.01
0.1
1
10
0.01
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. D44VH10 DC Current Gain
Figure 4. D45VH10 DC Current Gain
0.40
0.35
0.30
0.25
0.6
0.5
0.4
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
V
@ I
/I =
10
C B
CE(sat)
−40
°
C
−40
°
C
0.20
0.15
0.10
25
°
C
25
°
C
125
°
C
125
°
C
0.1
0
0.05
0
0.1
1
10
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. D44VH10 ON−Voltage
Figure 6. D45VH10 ON−Voltage
3
D44VH10 (NPN), D45VH10 (PNP)
1.2
1.0
0.8
0.6
0.4
1.4
V
@ I
/I =
10
C B
V
@ I
/I =
10
C B
BE(sat)
BE(sat)
1.2
1.0
0.8
0.6
0.4
−40
°
C
−40
°
C
125
°
C
125
°
C
25
°
C
25
°
C
0.2
0
0.2
0
0.1
1
10
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 7. D44VH10 ON−Voltage
Figure 8. D45VH10 ON−Voltage
100
T
A
T
C
50
30
20
1.0 ms
3.0 60
2.0 40
100
m
s
10
10
m
s
5.0
3.0
2.0
T
≤
70
°
C
dc
C
1.0
m
s
T
C
DUTY CYCLE
≤
50%
1.0
0.5
T
A
1.0 20
0.3
0.2
D44H/45H8
D44H/45H10,
1
1
0
0
0.1
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
0
20
40
60
80
100
120 140
160
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
T,
T
EMPERATURE (
°
C)
Figure 9. Maximum Rated Forward Bias
Safe Operating Area
Figure 10. Power Derating
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
0.07
0.05
R
= 1.56
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
READ TIME AT t
t
2
1
T
– T
= P
C
Z
q
(pk) JC(t)
0.01
0.01
J(pk)
DUTY CYCLE, D = t
/t
1 2
SINGLE PULSE
0.05 0.1
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0
k
0.02
t, TIME (ms)
Figure 11. Thermal Response
4
D44VH10 (NPN), D45VH10 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and the
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at
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. SCILLC
reserves the right to make changes without further notice to any products herein.
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
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o
ll Free
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D44VH/D
