onsemi-ECH8501-TL-H
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Order
i
n
g number : EN
A
1
581A
ECH8501
Bipolar Transistor
(–)
(–)
(
)
30V,
30A, Low V
sat Complementary
Dual ECH8
CE
F
e
atures
•
•
Composite type, facilitating high-density mounting
Mounting height 0.9mm
•
Low collector-to-emitter saturation voltage
Halogen free compliance
NPN : V
(sat)=0.075V(typ.)@I =2.5A
CE
C
PNP : V
(sat)=
–
-0.1V(typ.)@I
=
–
-2.5A
CE
C
•
( ):
PNP
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
(-
–
30
)
4
0
(-
–
)
3
0
(-
–
)
6
CBO
V
V
CEO
V
V
EBO
I
C
(-
–
)
5
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
Base Current
I
PW 1 s,
duty cyc
l
e
1
%
≤ μ
(-
–
)
3
0
(-
–
)
6
00
1.3
A
≤
CP
I
B
mA
W
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
T
o
tal D
i
s
s
i
p
at
i
o
n
P
P
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm) 1un
i
t
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm)
×
C
T
1.6
×
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
150
C
°
°
T
s
tg
–
–
55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
: ECH8
7011A-007
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
Top View
2.9
ECH8501-TL-H
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
0.15
8
5
MA
0 to 0.02
TL
L
O
T No.
4
1
0.65
0.3
El
e
ctr
i
c
al Connect
i
o
n
8
7
6
5
1 : Em
i
t
ter
(
N
P
N
T
R)
2 : Base
(
N
P
N
T
R)
3 : Em
i
t
ter
(
P
N
P TR)
4 : Base
(
P
N
P TR)
5 : Co
l
l
e
ctor
(
P
N
P TR)
6 : Co
l
l
e
ctor
(
P
N
P TR)
7 : Co
l
l
e
ctor
(
N
P
N
T
R)
8 : Co
l
l
e
ctor
(
N
P
N
T
R)
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
September, 2013
53012 TKIM/72110EA TKIM TC-00002441
No. A1581-1/8
ECH8501
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
(-
–
)
0
.1
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=
(
–
–
)
3
0
V
, I
=
0A
A
A
μ
CBO
CB E
I
V
=
(
–
–
)
4
V
, I
=
0A
(-
–
)
0
.1
560
μ
EBO
EB C
DC Current Ga
i
n
h
V
CE
=
(
–
–
)
2
V
, I
=
(
–
–
)
5
00mA
200
FE
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
(
–
–
)
1
0
V
, I
=
(
–
–
)
5
00mA
(
2
60
)
2
80
(
4
9
)
3
2
MHz
pF
mV
V
T
CE C
Cob
V
CB
=
(
–
–
)
1
0
V
,
f
=1MHz
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-On Time
V
(
s
at)
(
s
at)
I
C
=
(
–
–
)
2
.5
A
, I
=
(
–
–
)
1
25mA
(-
–
100
)
7
5
(-
–
170
)
1
10
CE
B
V
I
C
=
(
–
–
)
2
.5
A
, I
=
(
–
–
)
1
25mA
(-
–
)
0
.85
(-
–
)
1
.2
BE
B
V
I
C
=
(
–
–
)
1
0
A
,
I
=
0A
(-
–
30
)
4
0
(-
–
)
3
0
(-
–
)
6
V
μ
(
B
R
)
C
BO
E
V
I
C
=
(
–
–
)
1
m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =
(
–
–
)
1
0
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
(
3
7
)
3
0
(
1
47
)
2
20
(
1
4
)
1
2
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
ns
stg
f
Fa
l
l Ti
m
e
ns
Note : The speci
fi
cations shown above are for each individual transistor.
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
P
W
=20
μ
s
D.C.
≤
1%
V
o
ut
L
I
B2
IN
P
U
T
R
B
V
R
R
+
50
Ω
+
100
μ
F
= –
–
5V
470
μ
F
V
BE
V
CC
=12V
I =20I
=
–
–
20I
=2.5A
B1 B2
C
(For PN
P
,
t
he polarity is reversed.)
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
ECH8
Sh
i
p
p
i
n
g
memo
ECH8501-TL-H
3,000pcs./reel
Pb Free and Ha
l
o
gen Free
No. A1581-2/8
ECH8501
I
C
— V
CE
[PNP]
I
C
— V
CE
[NPN]
–
–
5.0
–
–
4.5
–
–
4.0
–
–
3.5
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10mA
–
–
10mA
8mA
6mA
4mA
–
–
8mA
–
–
6mA
–
–
4mA
–
–
2mA
2mA
–
–
0.5
0
0.5
0
I =0mA
I =0mA
B
B
0
–
–
0.1
–
–
0.5
0
0.1
0.5
–
–
0.2
–
–
0.3
–
–
0.4
0.2
0.3
0.4
IT15618
Collector-to-Emitter
V
o
ltage, V
CE
— V
IT15619
[NPN]
Collector-to-Emitter
V
o
ltage, V
CE
— V
[PNP]
I
— V
I
— V
C
BE
C
BE
–
–
5
–
–
4
–
–
3
–
–
2
5
4
3
2
V
=
–
–
2V
V
=2V
CE
CE
–
–
1
0
1
0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
IT15621
IT15620
Base-to-Emitter
V
o
ltage, V
BE
— V
Base-to-Emitter
V
o
ltage, V
–
– V
BE
[PNP]
[NPN]
h
— I
h
— I
FE C
FE
C
1000
1000
V
=
–
–
0.5V
V
=0.5V
CE
CE
7
5
7
5
3
2
3
2
100
100
7
7
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
–
–
0.01
–
–
0.1
–
–
1.0
–
–
10
0.01
0.1
1.0
IT15622
IT15623
Collector Current, I
–
– A
Collector Current, I
–
– A
C
C
h
— I
h
— I
FE C
[NPN]
[PNP]
FE
C
1000
1000
V
=
–
–
2V
V
=2V
CE
CE
7
5
7
5
3
2
3
2
100
7
100
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
–
–
0.01
–
–
0.1
–
–
1.0
–
–
10
IT15624
0.1
1.0
Collector Current, I
–
– A
Collector Current, I
–
– A
IT15625
C
C
No. A1581-3/8
ECH8501
V
CE
(
s
at)
–
– I
V
CE
(
s
at)
–
– I
[PNP]
/ I
=20
[NPN]
C
C
3
2
3
2
I
I
/ I
=20
B
C
B
C
–
–
100
100
7
5
7
5
3
2
3
2
–
–
10
10
7
5
7
5
3
3
0.01
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
2
2
2
3
5
7
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
2
2
2
3
5
7
10
–
–
0.1
–
–
1.0
0.1
1.0
–
–
0.01
–
–
10
Collector Current, I
–
– A
Collector Current, I
–
– A
IT15678
IT15679
C
C
[PNP]
V
(
s
at)
–
– I
[NPN]
V
(
s
at)
–
– I
CE
C
CE
C
7
5
3
2
I
/ I
=50
B
I
/ I
=50
B
C
C
3
2
100
7
5
–
–
100
7
5
3
2
3
2
10
–
–
10
7
0.01
7
7
2
3
5
7
3
5
7
7
2
3
5
7
3
5
7
10
–
–
0.1
–
–
1.0
0.1
1.0
–
–
0.01
–
–
10
Collector Current, I
–
– A
IT15628
Collector Current, I
–
– A
C
IT15680
C
[PNP]
V
(
s
at)
–
– I
[NPN]
V
(
s
at)
–
– I
BE
C
BE
C
3
2
3
2
I
/ I
=20
B
I
/ I
=20
B
C
C
–
–
1.0
1.0
7
5
7
5
3
3
2
2
0.01
7
2
3
5
7
3
5
7
7
2
3
5
7
3
5
7
10
–
–
0.1
–
–
1.0
0.1
1.0
–
–
0.01
–
–
10
Collector Current, I
–
– A
C
IT15630
Collector Current, I
–
– A
C
IT15631
[PNP]
Cob
–
– V
[NPN]
Cob
–
– V
CB
CB
3
2
100
f=1MHz
f=1MHz
7
5
100
3
2
7
5
3
2
10
1.0
2
3
5
7
3
5
2
3
5
7
3
5
10
–
–
1.0
–
–
10
Collector-to-Base
V
o
ltage, V
CB
— V
IT15632
Collector-to-Base
V
o
ltage, V
CB
— V
IT15633
No. A1581-4/8
ECH8501
f
— I
f
— I
[PNP]
[NPN]
=10V
T
C
T C
7
5
7
5
V
=
–
–
10V
V
CE
CE
3
2
3
2
100
100
7
5
7
5
3
3
2
2
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
2
3
5 7
–
–
10
IT15634
10
IT15635
–
–
0.01
–
–
0.1
–
–
1.0
0.1
Collector Current, I
–
– A
Collector Current, I
–
– A
C
C
A S
O
[PNP/NPN]
[PNP/NPN]
P
—
T
a
C
7
5
1.8
When mounted on ceramic substrate
I
=30A
≤
1
μ
s
CP
(900mm
2
×
0.8mm)
3
2
1.6
100
μ
s
10
7
5
1.4
1.3
1.2
I =5A
3
2
C
1.0
0.8
0.6
0.4
1.0
7
5
3
2
0.1
7
5
Ta=25
°
C
Single pulse
For PN
P
,
m
inus sign is omitted.
3
2
0.2
0
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
0.1
1.0
10
— V
IT15636
Collector-to-Emitter
V
o
ltage, V
IT15457
Ambient Temperature, Ta
–
–
°
C
CE
No. A1581-5/8
ECH8501
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
ECH8501-TL-H
No. A1581-6/8
ECH8501
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
ECH8501-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1581-7/8
ECH8501
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performance may vary over time. All operating parameters, including “Typicals”
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PS No. A1581-8/8
