onsemi-ECH8501-TL-H

Part #onsemi-ECH8501-TL-H
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onsemi-ECH8501-TL-H
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i
n
g number : EN
A
1
581A  
ECH8501  
Bipolar Transistor  
(–)  
(–)  
(
)
30V,  
30A, Low V  
sat Complementary
 
Dual ECH8  
CE  
F
e
atures  
•
•
Composite type, facilitating high-density mounting  
Mounting height 0.9mm  
•
Low collector-to-emitter saturation voltage  
Halogen free compliance  
NPN : V
 
(sat)=0.075V(typ.)@I =2.5A  
CE  
C
PNP : V
 
(sat)=
–
-0.1V(typ.)@I
 
=
–
-2.5A  
CE  
C
•
( ):
 
PNP  
Spec
i
fi
c
at
i
o
ns  
at Ta=25°C  
A
b
so
l
u
te Maximum Rat
i
n
gs  
Pa
r
a
meter  
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age  
Em
i
t
te
r
–
to-Base
V
o
l
t
age  
Co
l
l
e
ctor Current  
S
y
mbol  
Cond
i
t
i
o
ns  
Rat
i
n
gs  
Unit  
V
V
(-
–
30
)
4
0  
(-
–
)
3
0  
(-
–
)
6  
CBO  
V
V
CEO  
V
V
EBO  
I
C
(-
–
)
5  
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)  
Base Current  
I
PW 1 s,
 
duty cyc
l
e
 
1
%  
≤ μ  
(-
–
)
3
0  
(-
–
)
6
00  
1.3  
A
≤
CP  
I
B
mA  
W
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n  
T
o
tal D
i
s
s
i
p
at
i
o
n  
P
P
When mounted on ceram
i
c
s
ubstrate
(
9
00mm

2

0.8mm) 1un
i
t  
When mounted on ceram
i
c
s
ubstrate
(
9
00mm

2

0.8mm)  
×
C
T
1.6  
×
Junct
i
o
n
T
e
mperature  
Storage
T
e
mperature  
Tj  
150  
C
°
°
T
s
tg  
–
–
55 to +150  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package
D
i
m
ens
i
o
ns  
unit : mm (typ)  
Product &
 
Package
I
n
f
o
rmat
i
o
n  
• Package  
: ECH8  
7011A-007  
• JEITA, JEDEC  
: –  
• Minimum Packing Quantity
 
: 3,000 pcs./reel  
Top View  
2.9  
ECH8501-TL-H  
Pack
i
n
g
T
y
p
e :
T
L  
M
a
rk
i
n
g  
0.15  
8
5
MA  
0 to 0.02  
TL  
L
O
T No.  
4
1
0.65  
0.3  
El
e
ctr
i
c
al Connect
i
o
n  
8
7
6
5
1 : Em
i
t
ter
(
N
P
N
T
R)  
2 : Base
(
N
P
N
T
R)  
3 : Em
i
t
ter
(
P
N
P TR)  
4 : Base
(
P
N
P TR)  
5 : Co
l
l
e
ctor
(
P
N
P TR)  
6 : Co
l
l
e
ctor
(
P
N
P TR)  
7 : Co
l
l
e
ctor
(
N
P
N
T
R)  
8 : Co
l
l
e
ctor
(
N
P
N
T
R)  
1
2
3
4
ECH8  
Bottom View  
Semiconductor Components Industries, LLC, 2013  
September, 2013  
53012 TKIM/72110EA TKIM TC-00002441
 
No. A1581-1/8  

ECH8501  
at Ta=25°C  
El
e
ctr
i
c
al Character
i
s
t
i
c
s  
Rat
i
n
gs  
typ  
Pa
r
a
meter  
S
y
mbol  
Cond
i
t
i
o
ns  
Unit  
m
i
n  
max  
(-
–
)
0
.1  
Co
l
l
e
ctor Cuto
f
f
C
urrent  
Em
i
t
ter Cuto
f
f
C
urrent  
I
V
=
(
–
–
)
3
0
V
, I
 
=
0A  
A
A
μ
CBO  
CB E  
I
V
=
(
–
–
)
4
V
, I
 
=
0A  
(-
–
)
0
.1  
560  
μ
EBO  
EB C  
DC Current Ga
i
n  
h
V
CE  
=
(
–
–
)
2
V
, I
 
=
(
–
–
)
5
00mA  
200  
FE  
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct  
Output Capac
i
t
ance  
f
V
=
(
–
–
)
1
0
V
, I
 
=
(
–
–
)
5
00mA  
(
2
60
)
2
80  
(
4
9
)
3
2  
MHz  
pF  
mV  
V
T
CE C  
Cob  
V
CB  
=
(
–
–
)
1
0
V
,
f
=1MHz  
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age  
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age  
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age  
T
u
rn-On Time  
V
(
s
at)  
(
s
at)  
I
C
=
(
–
–
)
2
.5
A
, I
 
=
(
–
–
)
1
25mA  
(-
–
100
)
7
5
(-
–
170
)
1
10  
CE  
B
V
I
C
=
(
–
–
)
2
.5
A
, I
 
=
(
–
–
)
1
25mA  
(-
–
)
0
.85  
(-
–
)
1
.2  
BE  
B
V
I
C
=
(
–
–
)
1
0
A
,
 
I
=
0A  
(-
–
30
)
4
0  
(-
–
)
3
0  
(-
–
)
6  
V
μ
(
B
R
)
C
BO  
E
V
I
C
=
(
–
–
)
1
m
A
, R  
=
V
∞
(
B
R
)
C
EO  
BE  
V
I =
(
–
–
)
1
0
A
,
 
I
=
0A  
E
V
μ
(
B
R
)
EBO  
C
t
t
t
(
3
7
)
3
0  
(
1
47
)
2
20  
(
1
4
)
1
2  
ns  
on  
Storage
T
i
m
e  
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.  
ns  
stg  
f
Fa
l
l Ti
m
e  
ns  
Note : The speci
fi
cations shown above are for each individual transistor.  
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t  
I
B1  
P
W
=20
μ
s  
D.C.
≤
1%  
V
o
ut  
L
I
B2  
IN
P
U
T  
R
B
V
R
R
+
50
Ω  
+
100
μ
F  
= –
–
5V  
470
μ
F  
V
BE  
V
CC  
=12V  
I =20I
 
=
–
–
20I
 
=2.5A  
B1 B2  
C
(For PN
P
,
t
he polarity is reversed.)  
Order
i
n
g
I
n
f
o
rmat
i
o
n  
D
e
v
i
c
e  
Package  
ECH8  
Sh
i
p
p
i
n
g  
memo  
ECH8501-TL-H  
3,000pcs./reel  
Pb Free and Ha
l
o
gen Free  
No. A1581-2/8  

ECH8501  
I
C
— V  
CE  
[PNP]  
I
C
— V  
CE  
[NPN]  
–
–
5.0  
–
–
4.5  
–
–
4.0  
–
–
3.5  
–
–
3.0  
–
–
2.5  
–
–
2.0  
–
–
1.5  
–
–
1.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
10mA  
–
–
10mA  
8mA  
6mA  
4mA  
–
–
8mA  
–
–
6mA  
–
–
4mA  
–
–
2mA  
2mA  
–
–
0.5  
0
0.5  
0
I =0mA  
I =0mA  
B
B
0
–
–
0.1  
–
–
0.5  
0
0.1  
0.5  
–
–
0.2  
–
–
0.3  
–
–
0.4  
0.2  
0.3  
0.4  
IT15618  
Collector-to-Emitter
V
o
ltage, V  
CE  
— V
 
IT15619  
[NPN]  
Collector-to-Emitter
V
o
ltage, V  
CE  
— V  
[PNP]  
I
— V  
I
— V  
C
BE  
C
BE  
–
–
5  
–
–
4  
–
–
3  
–
–
2  
5
4
3
2
V
=
–
–
2V  
V
=2V  
CE  
CE  
–
–
1  
0
1
0
0
–
–
0.2  
–
–
0.4  
–
–
0.6  
–
–
0.8  
–
–
1.0  
–
–
1.2  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT15621  
IT15620  
Base-to-Emitter
V
o
ltage, V  
BE  
— V  
Base-to-Emitter
V
o
ltage, V
 
–
– V  
BE  
[PNP]  
[NPN]  
h
— I  
h
— I  
FE C  
FE  
C
1000  
1000  
V
=
–
–
0.5V  
V
=0.5V  
CE  
CE  
7
5
7
5
3
2
3
2
100  
100  
7
7
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10  
–
–
0.01  
–
–
0.1  
–
–
1.0  
–
–
10  
0.01  
0.1  
1.0  
IT15622  
IT15623  
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
C
C
h
— I  
h
— I  
FE C  
[NPN]  
[PNP]  
FE  
C
1000  
1000  
V
=
–
–
2V  
V
=2V  
CE  
CE  
7
5
7
5
3
2
3
2
100  
7
100  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10  
–
–
0.01  
–
–
0.1  
–
–
1.0  
–
–
10  
IT15624  
0.1  
1.0  
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
IT15625  
C
C
No. A1581-3/8  

ECH8501  
V
CE  
(
s
at)
–
– I  
V
CE  
(
s
at)
–
– I  
[PNP]  
/ I
 
=20  
[NPN]  
C
C
3
2
3
2
I
I
/ I
 
=20  
B
C
B
C
–
–
100  
100  
7
5
7
5
3
2
3
2
–
–
10  
10  
7
5
7
5
3
3
0.01  
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
2
2
2
3
5
7
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
2
2
2
3
5
7
10  
–
–
0.1  
–
–
1.0  
0.1  
1.0  
–
–
0.01  
–
–
10  
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
IT15678  
IT15679  
C
C
[PNP]  
V
(
s
at)
–
– I  
[NPN]  
V
(
s
at)
–
– I  
CE  
C
CE  
C
7
5
3
2
I
/ I
 
=50  
B
I
/ I
 
=50  
B
C
C
3
2
100  
7
5
–
–
100  
7
5
3
2
3
2
10  
–
–
10  
7
0.01  
7
7
2
3
5
7
3
5
7
7
2
3
5
7
3
5
7
10  
–
–
0.1  
–
–
1.0  
0.1  
1.0  
–
–
0.01  
–
–
10  
Collector Current, I
 
–
– A  
IT15628  
Collector Current, I
 
–
– A  
C
IT15680  
C
[PNP]  
V
(
s
at)
–
– I  
[NPN]  
V
(
s
at)
–
– I  
BE  
C
BE  
C
3
2
3
2
I
/ I
 
=20  
B
I
/ I
 
=20  
B
C
C
–
–
1.0  
1.0  
7
5
7
5
3
3
2
2
0.01  
7
2
3
5
7
3
5
7
7
2
3
5
7
3
5
7
10  
–
–
0.1  
–
–
1.0  
0.1  
1.0  
–
–
0.01  
–
–
10  
Collector Current, I
 
–
– A  
C
IT15630  
Collector Current, I
 
–
– A  
C
IT15631  
[PNP]  
Cob
–
– V  
[NPN]  
Cob
–
– V  
CB  
CB  
3
2
100  
f=1MHz  
f=1MHz  
7
5
100  
3
2
7
5
3
2
10  
1.0  
2
3
5
7
3
5
2
3
5
7
3
5
10  
–
–
1.0  
–
–
10  
Collector-to-Base
V
o
ltage, V  
CB  
— V  
IT15632  
Collector-to-Base
V
o
ltage, V  
CB  
— V
 
IT15633  
No. A1581-4/8  

ECH8501  
f
— I  
f
— I  
[PNP]  
[NPN]  
=10V  
T
C
T C  
7
5
7
5
V
=
–
–
10V  
V
CE  
CE  
3
2
3
2
100  
100  
7
5
7
5
3
3
2
2
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0  
2
3
5 7  
–
–
10  
IT15634  
10  
IT15635  
–
–
0.01  
–
–
0.1  
–
–
1.0  
0.1  
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
C
C
A S
 
O  
[PNP/NPN]  
[PNP/NPN]  
P
—
T
a  
C
7
5
1.8  
When mounted on ceramic substrate  
I
=30A  
≤
1
μ
s  
CP  
(900mm

2  

×
0.8mm)  
3
2
1.6  
100
μ
s  
10  
7
5
1.4  
1.3  
1.2  
I =5A  
3
2
C
1.0  
0.8  
0.6  
0.4  
1.0  
7
5
3
2
0.1  
7
5
Ta=25
°
C  
Single pulse  
For PN
P
,
m
inus sign is omitted.  
3
2
0.2  
0
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
0.1  
1.0  
10  
— V
 
IT15636  
Collector-to-Emitter
V
o
ltage, V  
IT15457  
Ambient Temperature, Ta
 
–
–
°
C  
CE  
No. A1581-5/8  

ECH8501  
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n  
ECH8501-TL-H  
No. A1581-6/8  

ECH8501  
Out
l
i
n
e Draw
i
n
g  
L
a
nd Pattern Examp
l
e  
ECH8501-TL-H  
M
a
ss
(
g
)
 
Un
i
t  
Unit: mm  
0.02  
mm  
* For reference  
0.4  
0.65  
No. A1581-7/8  

ECH8501  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals”
 
must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
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PS No. A1581-8/8