onsemi-ECH8502-TL-H
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Order
i
n
g number : EN
A
1
758A
ECH8502
Bipolar Transistor
(–)
(–)
(
)
50V,
30A, Low V
sat Complementary
Dual ECH8
CE
F
e
atures
•
•
Composite type, facilitating high-density mounting
Mounting height 0.9mm
•
Low collector-to-emitter saturation voltage
NPN : V
(sat)=0.08V(typ.)@I =2.5A
CE
C
PNP : V
(sat)=
–
-0.12V(typ.)@I
=
–
-2.5A
CE
C
•
Halogen free compliance
( ):
PNP
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
(-
–
50
)
1
00
(-
–
)
5
0
(-
–
)
6
CBO
V
V
CEO
V
V
EBO
I
C
(-
–
)
5
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
Base Current
I
PW 1 s,
duty cyc
l
e
1
%
≤ μ
(-
–
)
3
0
(-
–
)
6
00
1.3
A
≤
CP
I
B
mA
W
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
T
o
tal D
i
s
s
i
p
at
i
o
n
P
P
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm) 1un
i
t
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm)
×
C
T
1.6
×
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
150
C
°
°
T
s
tg
–
–
55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
: ECH8
7011A-007
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
Top View
2.9
ECH8502-TL-H
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
0.15
8
5
0 to 0.02
MB
TL
L
O
T No.
4
1
0.65
0.3
El
e
ctr
i
c
al Connect
i
o
n
8
7
6
5
1 : Em
i
t
ter
(
N
P
N
T
R)
2 : Base
(
N
P
N
T
R)
3 : Em
i
t
ter
(
P
N
P TR)
4 : Base
(
P
N
P TR)
5 : Co
l
l
e
ctor
(
P
N
P TR)
6 : Co
l
l
e
ctor
(
P
N
P TR)
7 : Co
l
l
e
ctor
(
N
P
N
T
R)
8 : Co
l
l
e
ctor
(
N
P
N
T
R)
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
September, 2013
53012 TKIM/70710EA TKIM TC-00002428
No. A1758-1/8
ECH8502
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
(-
–
)
0
.1
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=
(
–
–
)
5
0
V
, I
=
0A
A
A
μ
CBO
CB E
I
V
=
(
–
–
)
4
V
, I
=
0A
(-
–
)
0
.1
560
μ
EBO
EB C
DC Current Ga
i
n
h
V
CE
=
(
–
–
)
2
V
, I
=
(
–
–
)
5
00mA
200
FE
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
(
–
–
)
1
0
V
, I
=
(
–
–
)
5
00mA
(
2
60
)
2
90
(
4
5
)
2
5
MHz
pF
mV
V
T
CE C
Cob
V
CB
=
(
–
–
)
1
0
V
,
f
=1MHz
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-On Time
V
(
s
at)
(
s
at)
I
C
=
(
–
–
)
2
.5
A
, I
=
(
–
–
)
1
25mA
(-
–
120
)
8
0
(-
–
200
)
1
20
CE
B
V
I
C
=
(
–
–
)
2
.5
A
, I
=
(
–
–
)
1
25mA
(-
–
)
0
.85
(-
–
)
1
.2
BE
B
V
I
C
=
(
–
–
)
1
0
A
,
I
=
0A
(-
–
50
)
1
00
(-
–
)
5
0
V
μ
(
B
R
)
C
BO
E
V
I
C
=
(
–
–
)
1
m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =
(
–
–
)
1
0
A
,
I
=
0A
E
(-
–
)
6
V
μ
(
B
R
)
EBO
C
t
t
t
(
3
0
)
3
0
(
1
80
)
2
80
(
2
0
)
2
5
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
ns
stg
f
Fa
l
l Ti
m
e
ns
Note : The speci
fi
cations shown above are for each individual transistor.
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
P
W
=20
μ
s
D.C.
≤
1%
V
o
ut
L
I
B2
IN
P
U
T
R
B
V
R
R
+
50
Ω
+
100
μ
F
= –
–
5V
470
μ
F
V
BE
V
CC
=25V
I =20I
=
–
–
20I
=2.5A
B1 B2
C
(For PN
P
,
t
he polarity is reversed.)
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
ECH8
Sh
i
p
p
i
n
g
memo
ECH8502-TL-H
3,000pcs./reel
Pb Free and Ha
l
o
gen Free
No. A1758-2/8
ECH8502
I
C
— V
CE
[PNP]
I
C
— V
CE
[NPN]
–
–
5.0
–
–
4.5
–
–
4.0
–
–
3.5
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
–
–
10mA
6mA
–
–
6mA
–
–
4mA
4mA
2mA
–
–
2mA
–
–
0.5
0
0.5
0
I =0mA
I =0mA
B
B
0
–
–
0.1
–
–
0.5
0
0.1
0.5
–
–
0.2
–
–
0.3
–
–
0.4
0.2
0.3
0.4
IT15638
Collector-to-Emitter
V
o
ltage, V
CE
— V
IT15639
[NPN]
Collector-to-Emitter
V
o
ltage, V
CE
— V
I
— V
[PNP]
I
— V
C
BE
C
BE
5
4
3
2
–
–
5
–
–
4
–
–
3
–
–
2
V
=2V
V
=
–
–
2V
CE
CE
–
–
1
0
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
IT15640
Base-to-Emitter
V
o
ltage, V
BE
— V
IT15449
Base-to-Emitter
V
o
ltage, V
BE
— V
h
— I
[NPN]
[PNP]
h
— I
FE
C
FE
C
1000
1000
V
=
–
–
0.5V
V
=0.5V
CE
CE
7
5
7
5
3
2
3
2
100
7
5
3
2
100
7
10
–
–
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
–
–
0.1
–
–
1.0
–
–
10
0.01
0.1
1.0
Collector Current, I
–
– A
IT15641
IT15681
Collector Current, I
–
– A
C
C
h
— I
C
h
— I
C
[NPN]
[PNP]
FE
FE
1000
1000
V
=
–
–
2V
V
=2V
CE
CE
7
5
7
5
3
2
3
2
100
7
5
3
2
100
10
–
–
0.01
7
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
–
–
0.1
–
–
1.0
0.1
1.0
10
IT15642
Collector Current, I
–
– A
Collector Current, I
–
– A
IT15450
C
C
No. A1758-3/8
ECH8502
V
CE
(
s
at)
–
– I
[PNP]
/ I
=20
[NPN]
V
CE
(
s
at)
–
– I
C
C
3
2
5
I
/ I
=20
I
C
B
C
B
3
2
100
7
5
–
–
100
7
5
3
2
3
2
10
7
5
–
–
10
3
0.01
7
2
3
5
5
5
7
2
3
5
7
–
–
1.0
2
3
5
7
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
2
2
3
5
7
10
0.1
1.0
–
–
0.01
–
–
0.1
Collector Current, I
–
– A
IT15453
IT15643
Collector Current, I
–
– A
C
C
V
CE
(
s
at)
–
– I
C
[PNP]
V
(
s
at)
–
– I
[NPN]
CE
C
–
–
1000
3
2
I
/ I
=50
B
I
/ I
=50
B
C
C
7
5
3
2
100
7
5
–
–
100
7
5
3
2
3
2
10
–
–
10
7
0.01
7
2
3
7
2
3
5
7
–
–
1.0
2
3
5
7
7
2
3
5
7
3
5
7
10
0.1
1.0
–
–
0.01
–
–
0.1
Collector Current, I
–
– A
Collector Current, I
–
– A
IT15644
IT15454
[PNP]
C
C
V
BE
(
s
at)
–
– I
C
V
(
s
at)
–
– I
[NPN]
BE
C
3
2
3
2
I
/ I
=20
B
I
/ I
=20
B
C
C
–
–
1.0
1.0
7
5
7
5
3
3
2
2
0.01
2
3
7
2
3
5
7
–
–
1.0
2
3
5
7
7
2
3
5
7
3
5
7
10
0.1
1.0
–
–
0.01
–
–
0.1
Collector Current, I
–
– A
IT15455
Collector Current, I
–
– A
C
IT15645
C
[PNP]
Cob
–
– V
[NPN]
Cob
–
– V
CB
CB
3
2
100
f=1MHz
f=1MHz
7
5
100
7
5
3
2
3
2
10
7
1.0
10
–
–
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
100
–
–
10
IT15452
Collector-to-Base
V
o
ltage, V
CB
— V
IT15646
Collector-to-Base
V
o
ltage, V
— V
CB
No. A1758-4/8
ECH8502
f
— I
C
f
T
— I
C
[PNP]
[NPN]
=10V
T
7
5
7
5
V
=
–
–
10V
V
CE
CE
3
2
3
2
100
100
7
5
7
5
3
3
2
2
0.01
2
3
5
7
2
3
5
7
–
–
1.0
2
3
5
7
2
3
5
7
2
3
5
7
1.0
2
3
5 7
–
–
0.01
–
–
0.1
10
IT15647
0.1
Collector Current, I
–
– A
IT15451
Collector Current, I
–
– A
C
C
A S
O
[PNP/NPN]
[PNP/NPN]
P
—
T
a
C
7
5
1.8
When mounted on ceramic substrate
I
=30A
≤
1
μ
s
CP
(900mm
2
×
0.8mm)
3
2
1.6
10
7
5
1.4
1.3
1.2
I =5A
C
3
2
1.0
0.8
0.6
0.4
1.0
7
5
3
2
0.1
7
5
Ta=25
°
C
Single pulse
For PN
P
,
m
inus sign is omitted.
3
2
0.2
0
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
0.1
1.0
10
Collector-to-Emitter
V
o
ltage, V
— V
IT15648
IT15457
Ambient Temperature, Ta
–
–
°
C
CE
No. A1758-5/8
ECH8502
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
ECH8502-TL-H
No. A1758-6/8
ECH8502
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
ECH8502-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1758-7/8
ECH8502
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
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PS No. A1758-8/8
