onsemi-ECH8654-TL-HQ
| Part # | onsemi-ECH8654-TL-HQ |
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Order
i
n
g number : EN
A
0
981B
ECH8654
P-Channel Power MOSFET
–
–
Ω
20V, 5A,
38m ,
Dual ECH8
F
e
atures
•
•
•
Low ON-resistance
Halogen free compliance
1.8V drive
Protection diode in
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
–
–
20
Unit
V
V
D
S
S
V
±10
V
GSS
I
— 5
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
I
PW 10 s,
duty cyc
l
e
1
%
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm) 1un
i
t
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm)
–
–
40
A
≤
μ
≤
DP
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
T
o
tal Power D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
Storage
T
e
mperature
P
P
1.3
W
W
°C
°C
×
D
T
1.5
×
T
c
h
150
T
s
tg
–
–
55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
ECH8654-TL-H
Top View
2.9
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
0.15
8
5
WZ
0 to 0.02
TL
L
O
T No.
4
1
El
e
ctr
i
c
al Connect
i
o
n
0.65
0.3
8
7
6
5
1 :
S
ource1
2 : Gate1
3 :
S
ource2
4 : Gate2
5 : Dr
a
i
n
2
6 : Dr
a
i
n
2
7 : Dr
a
i
n
1
8 : Dr
a
i
n
1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
91212 TKIM/62012 TKIM/N1407PE TIIM TC-00001014
No. A0981-1/7
ECH8654
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
–
–
20
max
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I =
–
–
1m
A
,
V
=
0V
D GS
(
B
R
)
D
S
S
I
V
=
–
–
20
V
, V
=
0V
–
–
1
A
A
μ
D
S
S
DS GS
I
V
=±8
V
, V
=
0V
±10
μ
GSS
GS DS
V
(
o
f
f)
|
V
=
–
–
10
V
, I
=
–
–
1mA
–
–
0.4
4.9
–
–
1.3
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
DS
=
–
–
10
V
, I
=
–
–
3A
D
8.3
S
|
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
I
=
–
–
3
A
, V
=
–
–
4.5V
GS
29
41
38
58
98
m
Ω
Ω
Ω
DS
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=
–
–
1.5
A
, V
=
–
–
2.5V
GS
m
m
I
D
=
–
–
0.5
A
, V
=
–
–
1.8V
GS
64
I
n
put Capac
i
t
ance
C
i
s
s
960
180
140
14
pF
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=
–
–
10
V
,
f
=1MHz
pF
pF
ns
DS
t
t
t
t
(
o
n)
d
r
55
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
92
ns
d
f
68
ns
T
o
tal Gate Cha
r
g
e
Qg
11
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=
–
–
10
V
, V
=
–
–
4.5
V
, I
=
–
–
5A
2.0
2.8
–
–
0.82
DS
GS
D
V
SD
I =
–
–
5
A
,
V
=
0V
S GS
–
–
1.2
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V
=
–
–
10V
V
DD
IN
0V
–
–
4V
I
=
–
–
3A
D
V
IN
R =3.33
Ω
L
D
V
OUT
PW=10
μ
s
D.C.
≤
1%
G
ECH8654
P
.
G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
ECH8
Sh
i
p
p
i
n
g
memo
ECH8654-TL-H
3,000pcs./reel
Pb Free and Ha
l
o
gen Free
No. A0981-2/7
ECH8654
I
D
— V
DS
I
— V
D GS
–
–
5
–
–
4
–
–
3
–
–
2
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
V
=
–
–
10V
GS
–
–
1
0
–
–
1
0
V
=
–
–
1.2V
GS
0
–
–
0.1
–
–
0.2
–
–
0.3
–
–
0.4
–
–
0.5
–
–
0.6
–
–
0.7
–
–
0.8
–
–
0.9
–
–
1.0
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
IT13074
Drain-to-Source
V
o
ltage, V
— V
Gate-to-Source
V
o
ltage, V
–
– V
GS
IT13073
DS
R
(on)
–
– V
R
DS
(on)
–
– Ta
DS
GS
140
120
100
80
100
80
Ta=25°C
I
=
–
–
0.5A
D
–
–
1.5A
–
–
3.0A
60
60
40
40
20
0
20
0
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
–
–
6
–
–
7
–
–
8
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
— V
Ambient Temperature, Ta
–
–
°
C
IT13075
IT13076
GS
|
y
fs
|
— I
I
S
— V
SD
D
3
2
–
–
10
7
5
V
=0V
V
=
–
–
10V
GS
DS
3
2
10
7
5
–
–
1.0
7
5
3
2
3
2
1.0
7
–
–
0.1
7
5
5
3
2
3
2
0.1
–
–
0.01
–
–
0.01
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
IT13078
2
3
5
7
2
3
5
7
2
3
5 7
–
–
10
–
–
0.1
–
–
1.0
Drain Current, I
–
– A
IT13077
Diode Forward
V
o
ltage, V
–
– V
SD
D
SW Time
–
– I
Ciss, Coss, Crss
–
– V
D
DS
3
2
1000
f=1MHz
V
V
=
–
–
10V
=
–
–
4V
DD
GS
7
5
3
2
Ciss
1000
7
5
100
7
5
3
2
3
2
t (on)
d
100
10
7
7
2
3
5
7
2
3
5
7
2
3
5
7
0
–
–
2
–
–
4
–
–
6
–
–
8
–
–
10
–
–
12
–
–
14
–
–
16
–
–
18
–
–
20
–
–
0.01
–
–
0.1
–
–
1.0
–
–
10
Drain Current, I
–
– A
Drain-to-Source
V
o
ltage, V
DS
— V
IT13079
IT13080
D
No. A0981-3/7
ECH8654
V
—
Q
g
A S O
GS
–
–
4.5
–
–
100
7
V
=
–
–
10V
I
=
–
–
40A
DP
DS
PW
≤
10
μ
s
5
–
–
4.0
I =
–
–
5A
D
3
2
1ms
–
–
3.5
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
–
–
10
I =
–
–
5A
7
5
D
3
2
–
–
1.0
7
5
Operation in this
area is limited by R
(on).
3
2
DS
–
–
0.1
7
5
Ta=25
°C
Single pulse
3
2
–
–
0.5
0
Mounted on a ceramic board (900mm
2
×
0.8mm) 1unit
–
–
0.01
–
–
0.01
0
1
2
3
4
5
6
7
8
9
10
11
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
–
–
0.1
–
–
1.0
–
–
10
Total Gate Charge, Qg
–
–
n
C
IT13081
Drain-to-Source
V
o
ltage, V
DS
— V
IT13082
P
— Ta
D
1.8
Mounted on a ceramic board (900mm
2
×
0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT13083
Ambient Temperature, Ta
–
–
°
C
No. A0981-4/7
ECH8654
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
ECH8654-TL-H
No. A0981-5/7
ECH8654
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
ECH8654-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A0981-6/7
ECH8654
Note on usage : Since the ECH8654 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A0981-7/7
