onsemi-ECH8657-TL-H
| Part # | onsemi-ECH8657-TL-H |
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Order
i
n
g number : EN
A
1
710B
ECH8657
N-Channel Power MOSFET
Ω
35V, 4.5A, 59m
, Dual ECH8
F
e
atures
•
4V drive
•
Halogen free compliance
•
Protection diode in
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
35
D
S
S
V
±20
V
GSS
I
4.5
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
T
o
tal D
i
s
s
i
p
at
i
o
n
I
PW 10 s,
duty cyc
l
e
1
%
When mounted on ceram
i
c
s
ubstrate
(
1
200mm
2
0.8mm) 1un
i
t
When mounted on ceram
i
c
s
ubstrate
(
1
200mm
2
0.8mm)
30
1.3
A
≤
μ
≤
DP
P
P
W
W
°C
°C
×
D
T
1.5
×
Channel
T
e
mperature
Storage
T
e
mperature
T
c
h
150
T
s
tg
–
–
55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product &
Package
I
n
f
o
rmat
i
o
n
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
ECH8657-TL-H
Top View
2.9
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
0.15
8
5
TC
0 to 0.02
TL
L
o
t No.
4
1
El
e
ctr
i
c
al Connect
i
o
n
0.65
0.3
8
7
6
5
1 :
S
ource1
2 : Gate1
3 :
S
ource2
4 : Gate2
5 : Dr
a
i
n
2
6 : Dr
a
i
n
2
7 : Dr
a
i
n
1
8 : Dr
a
i
n
1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/D2210 TKIM/42810PE TKIM TC-00002338
No. A1710-1/7
ECH8657
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
max
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=1m
A
, V
=
0V
35
(
B
R
)
D
S
S
D
GS
I
V
=35
V
, V
=
0V
1
A
A
μ
D
S
S
DS GS
I
V
=±16
V
, V
=
0V
±10
2.6
μ
GSS
GS DS
V
(
o
f
f)
|
V
=10
V
, I
=
1mA
1.2
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
=10
V
, I
=
2A
D
1.66
45
S
|
DS
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
I
D
=2
A
, V
=
10V
GS
59
119
155
m
Ω
Ω
Ω
DS
DS
DS
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=1
A
, V
=
4.5V
GS
85
m
m
I
D
=1
A
, V
=
4V
GS
110
230
37
I
n
put Capac
i
t
ance
C
i
s
s
pF
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=20
V
,
f
=1MHz
pF
pF
ns
DS
25
t
t
t
t
(
o
n)
6
d
r
11
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
17
ns
d
f
9
ns
T
o
tal Gate Cha
r
g
e
Qg
4.6
1.0
1.0
0.85
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=20
V
, V
=
10
V
, I
=
4.5A
GS
DS
D
V
SD
I =4.5
A
,
V
=
0V
S GS
1.2
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V
=20V
V
DD
IN
10V
0V
I
=2A
D
V
IN
R =10
Ω
L
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
G
ECH8657
P. G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
ECH8
Sh
i
p
p
i
n
g
3,000pcs./reel
memo
ECH8657-TL-H
Pb Free and Ha
l
o
gen Free
No. A1710-2/7
ECH8657
I
D
— V
DS
I
— V
D GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
5
4
3
2
V
=10V
DS
1
0
V
=3.0V
GS
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Drain-to-Source
V
o
ltage, V
— V
IT14210
Gate-to-Source
V
o
ltage, V
GS
— V
IT14211
DS
R
(
o
n)
–
– V
GS
R
(
o
n)
–
–
T
a
DS
DS
240
200
160
120
80
200
160
120
80
Ta=25
°
C
I
=1A
D
2A
40
0
40
0
0
2
4
6
8
10
12
14
16
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
— V
IT16223
Ambient Temperature, Ta
–
–
°
C
IT14213
GS
|
y
fs
|
— I
I
— V
D
S
S
D
7
5
5
V
=10V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
IT14215
2
3
5
7
2
3
5
7
1.0
2
3
5
7
0.1
Drain Current, I
–
– A
D
Diode Forward
V
o
ltage, V
–
– V
SD
IT14214
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
D
DS
5
7
V
V
=15V
=10V
f=1MHz
DD
GS
5
3
2
3
2
100
10
7
5
t (on)
d
7
5
t
r
3
2
3
2
1.0
0.1
10
0
5
10
15
20
25
30
IT14217
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I
–
– A
IT14216
Drain-to-Source
V
o
ltage, V
DS
— V
D
No. A1710-3/7
ECH8657
V
GS
—
Q
g
A S
O
7
5
10
9
V
=10V
DS
=4.5A
(
PW
≤
10
μ
s)
I
=30A
DP
3
2
I
D
8
10
7
5
I
=4.5A
D
7
3
2
6
1.0
7
5
5
Operation in this
4
3
2
area is limited by R
(on).
DS
3
0.1
7
5
2
Ta=25
°
C
Single pulse
3
2
1
0
When mounted on ceramic substrate
(1200mm
2
×
0.8mm) 1unit
0.01
0.1
0
1
2
3
4
5
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
Total Gate Charge, Qg
–
–
n
C
IT14218
Drain-to-Source
V
o
ltage, V
— V
IT15504
DS
P
—
T
a
D
1.8
When mounted on ceramic substrate
(1200mm
2
×
0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT15505
Ambient Temperature, Ta
–
–
°
C
No. A1710-4/7
ECH8657
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
ECH8657-TL-H
No. A1710-5/7
ECH8657
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
ECH8657-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1710-6/7
ECH8657
Note on usage : Since the ECH8657 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A1710-7/7
