onsemi-ECH8660-TL-H
| Part # | onsemi-ECH8660-TL-H |
Download  | onsemi-ECH8660-TL-H |
Order
i
n
g number : EN
A
1
358B
ECH8660
Power MOSFET
–
–
Ω
Ω
30V, 4.5A, 59m
, 30V, 4.5A,
59m ,
Complementary Dual ECH8
F
e
atures
•
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
•
•
4V drive
Halogen free compliance
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
N-channel
30
P-channel
–
–
30
Unit
V
V
D
S
S
V
±20
4.5
30
±20
V
GSS
I
–
–
4.5
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
T
o
tal D
i
s
s
i
p
at
i
o
n
I
PW 10 s,
duty cyc
l
e
1
%
–
–
30
A
≤
μ
≤
DP
P
P
When mounted on ceram
i
c
s
ubstrate
(
1
200mm
2
0.8mm) 1un
i
t
When mounted on ceram
i
c
s
ubstrate
(
1
200mm
2
0.8mm)
1.3
1.5
W
W
°C
°C
×
D
T
×
Channel
T
e
mperature
Storage
T
e
mperature
T
c
h
150
–
–
55 to +150
T
s
tg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product &
Package
I
n
f
o
rmat
i
o
n
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
ECH8660-TL-H
Top View
2.9
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
0.15
8
5
TF
L
o
t No.
0 to 0.02
TL
4
1
El
e
ctr
i
c
al Connect
i
o
n
0.65
0.3
8
7
6
5
1 :
S
ource1
2 : Gate1
3 :
S
ource2
4 : Gate2
5 : Dr
a
i
n
2
6 : Dr
a
i
n
2
7 : Dr
a
i
n
1
8 : Dr
a
i
n
1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695
No. A1358-1/8
ECH8660
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
max
[N
–
channe
l
]
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=1m
A
, V
=
0V
30
(
B
R
)
D
S
S
D
GS
I
V
=30
V
, V
=
0V
1
A
A
μ
D
S
S
DS GS
I
V
=±16
V
, V
=
0V
±10
2.6
μ
GSS
GS DS
V
(
o
f
f)
|
V
=10
V
, I
=
1mA
1.2
1
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
I
=10
V
, I
=
2A
D
1.66
45
S
|
DS
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
=2
A
, V
=
10V
GS
59
119
155
m
Ω
Ω
Ω
DS
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=1
A
, V
=
4.5V
GS
85
m
m
I
D
=1
A
, V
=
4V
GS
110
240
45
I
n
put Capac
i
t
ance
C
i
s
s
V
=10
V
,
f
=1MHz
=10
V
,
f
=1MHz
=10
V
,
f
=1MHz
pF
DS
Output Capac
i
t
ance
Coss
Crss
V
pF
pF
ns
DS
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
V
30
DS
t
t
t
t
(
o
n)
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
6.2
11
d
r
Ri
s
e
T
i
m
e
ns
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
17
ns
d
f
7.5
4.4
1.1
0.64
0.84
ns
T
o
tal Gate Cha
r
g
e
Qg
V
=10
V
, V
=
10
V
, I
=
4.5A
GS
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
[
P
-channe
l
]
Qgs
Qgd
V
=10
V
, V
=
10
V
, I
=
4.5A
GS
DS
D
V
=10
V
, V
=
10
V
, I
=
4.5A
GS
DS
D
V
I =4.5
A
,
V
=
0V
GS
1.2
SD
S
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=
–
–
1m
A
, V
=
0V
–
–
30
V
(
B
R
)
D
S
S
D GS
I
V
=
–
–
30
V
, V
=
0V
–
–
1
±10
A
A
μ
D
S
S
DS
GS
I
V
=±16
V
, V
=
0V
GS DS
μ
GSS
V
(
o
f
f)
|
V
=
–
–
10
V
, I
=
–
–
1mA
DS D
–
–
1.2
2.5
–
–
2.3
V
GS
yfs
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
I
=
–
–
10
V
, I
=
–
–
2A
D
4.2
45
S
|
DS
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
=
–
–
2
A
, V
=
–
–
10V
GS
59
100
115
m
Ω
Ω
Ω
DS
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=
–
–
1
A
, V
=
–
–
4.5V
GS
71
m
m
I
D
=
–
–
1
A
, V
=
–
–
4V
GS
82
I
n
put Capac
i
t
ance
C
i
s
s
V
=
–
–
10
V
,
f
=1MHz
=
–
–
10
V
,
f
=1MHz
=
–
–
10
V
,
f
=1MHz
430
105
75
pF
DS
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
DS
pF
pF
ns
V
DS
t
t
t
t
(
o
n)
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
7.5
26
d
r
ns
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
45
ns
d
f
35
ns
T
o
tal Gate Cha
r
g
e
Qg
V
=
–
–
10
V
, V
=
–
–
10
V
, I
=
–
–
4.5A
GS
10
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
DS
=
–
–
10
V
, V
=
–
–
10
V
, I
=
–
–
4.5A
GS
2.0
2.5
–
–
0.85
D
V
DS
=
–
–
10
V
, V
=
–
–
10
V
, I
=
–
–
4.5A
GS
GS
D
V
SD
I =
–
–
4.5
A
,
V
=
0V
S
–
–
1.2
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
[N
–
channe
l
]
[
P
-channe
l
]
V =15V
DD
V =
–
–
15V
DD
V
IN
V
IN
10V
0V
0V
–
–
10V
I
=2A
I =
–
–
2A
D
R =7.5
Ω
L
D
V
IN
V
IN
R =7.5
Ω
L
D
V
OUT
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
P
W
=10
μ
s
D.C.
≤
1%
G
G
ECH8660
ECH8660
P. G
P. G
50
Ω
50
Ω
S
S
No. A1358-2/8
ECH8660
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
ECH8
Sh
i
p
p
i
n
g
memo
ECH8660-TL-H
3,000pcs./reel
Pb-Free and Ha
l
o
gen Free
I
— V
DS
[Nch]
I
— V
[Nch]
=10V
D
D GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
5
4
3
2
1
V
DS
V
=3.0V
GS
0.5
0
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
Drain-to-Source
V
o
ltage, V
— V
IT14210
Gate-to-Source
V
o
ltage, V
GS
— V
IT14211
DS
R
(
o
n)
–
– V
GS
[Nch]
R
(
o
n)
–
–
T
a
[Nch]
DS
DS
240
200
160
120
80
200
160
120
80
Ta=25
°
C
I
D
=1A
2A
40
0
40
0
0
2
4
6
8
10
12
14
16
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
— V
IT16223
Ambient Temperature, Ta
–
–
°
C
IT14213
GS
|
y
fs
|
— I
[Nch]
=10V
I
— V
[Nch]
D
S
S
D
7
5
5
V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
IT14215
2
3
5
7
2
3
5
7
1.0
2
3
5
7
0.1
Drain Current, I
–
– A
Diode Forward
V
o
ltage, V
–
– V
SD
IT14214
D
No. A1358-3/8
ECH8660
SW
T
i
m
e
–
– I
[Nch]
C
i
s
s, Coss, Crss
–
– V
[Nch]
D
DS
5
7
5
V
V
=15V
=10V
f=1MHz
DD
GS
3
2
3
2
100
10
7
5
t (on)
d
7
5
t
r
3
2
3
2
1.0
0.1
10
0
5
10
15
20
25
30
IT14217
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I
–
– A
IT14216
Drain-to-Source
V
o
ltage, V
— V
D
DS
V
—
Q
g
[Nch]
A S
O
[Nch]
PW
≤
10
μ
s
GS
7
5
10
9
V
I
=10V
=4.5A
I
=30A
DS
D
DP
3
2
8
10
7
5
I
=4.5A
1ms
D
7
3
2
6
1.0
7
5
5
Operation in this
4
3
2
area is limited by R
(on).
DS
3
0.1
7
5
2
Ta=25
°
C
Single pulse
3
2
1
0
When mounted on ceramic substrate
(1200mm
2
×
0.8mm)
0.01
0.1
0
0
0
1
2
3
4
5
IT14218
[Pch]
2
3
5
7
2
3
5
7
2
3
5
1.0
10
Total Gate Charge, Qg
–
–
n
C
Drain-to-Source
V
o
ltage, V
— V
IT14195
DS
I
— V
DS
I
— V
[Pch]
D
D GS
–
–
4.0
–
–
3.5
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
–
–
6
V
=
–
–
10V
DS
–
–
5
–
–
4
–
–
3
–
–
2
–
–
1
0
–
–
0.5
0
–
–
0.1
–
–
0.2
–
–
0.3
–
–
0.4
–
–
0.5
–
–
0.6
–
–
0.7
–
–
0.8
–
–
0.9
–
–
1.0
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
–
–
3.0
–
–
3.5
–
–
4.0
Drain-to-Source
V
o
ltage, V
DS
— V
IT14186
Gate-to-Source
V
o
ltage, V
GS
— V
IT14187
R
(
o
n)
–
– V
[Pch]
R
(
o
n)
–
–
T
a
[Pch]
DS
GS
DS
180
160
140
120
100
80
160
140
120
100
80
Ta=25
°
C
I
D
=
–
–
1A
–
–
2A
60
60
40
40
20
0
20
0
–
–
2
–
–
4
–
–
6
–
–
8
–
–
10
–
–
12
–
–
14
–
–
16
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
GS
— V
IT16224
Ambient Temperature, Ta
–
–
°
C
IT14189
No. A1358-4/8
ECH8660
|
y
fs
|
— I
[Pch]
I
— V
[Pch]
=0V
D
S
S
D
–
–
10
7
5
2
V
=
–
–
10V
V
GS
DS
10
7
5
3
2
3
2
–
–
1.0
1.0
7
5
7
5
3
2
3
2
–
–
0.1
0.1
7
5
7
5
3
2
3
2
0.01
7
–
–
0.01
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
–
–
10
IT14190
–
–
0.001
–
–
0.01
–
–
0.1
–
–
1.0
Drain Current, I
–
– A
D
Diode Forward
V
o
ltage, V
–
– V
SD
IT14191
SW
T
i
m
e
–
– I
[Pch]
[Pch]
C
i
s
s, Coss, Crss
–
– V
D
DS
1000
100
V
V
=
–
–
15V
=
–
–
10V
f=1MHz
DD
GS
7
5
7
5
3
2
3
2
100
10
t (on)
d
7
5
7
5
3
3
0
–
–
5
–
–
10
–
–
15
–
–
20
–
–
25
–
–
30
2
3
5
7
2
3
5
7
–
–
0.1
–
–
1.0
–
–
10
Drain Current, I
–
– A
IT14193
IT14192
Drain-to-Source
V
o
ltage, V
— V
D
DS
V
—
Q
g
[Pch]
A S
O
[Pch]
GS
7
5
–
–
10
V
=
–
–
10V
I
=
–
–
30A
DP
PW
≤
10
μ
s
DS
=
–
–
4.5A
3
2
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
I
D
–
–
10
7
5
1ms
I
=
–
–
4.5A
D
3
2
–
–
1.0
7
5
Operation in this
3
2
area is limited by R
(on).
DS
–
–
0.1
7
5
Ta=25
°
C
Single pulse
3
2
–
–
1
0
When mounted on ceramic substrate
(1200mm
2
×
0.8mm)
–
–
0.01
–
–
0.1
0
1
2
3
4
5
6
7
8
9
10
11
2
3
5
7
2
3
5
7
2
3
5
–
–
1.0
–
–
10
Total Gate Charge, Qg
–
–
n
C
IT14194
Drain-to-Source
V
o
ltage, V
DS
— V
IT14196
P
—
T
a
[Nch/Pch]
D
1.8
When mounted on ceramic substrate
(1200mm
2
×
0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT14197
Ambient Temperature, Ta
–
–
°
C
No. A1358-5/8
ECH8660
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
ECH8660-TL-H
No. A1358-6/8
ECH8660
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
ECH8660-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1358-7/8
ECH8660
Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1358-8/8
