onsemi-ECH8661-TL-H
| Part # | onsemi-ECH8661-TL-H |
Download  | onsemi-ECH8661-TL-H |
Order
i
n
g number : EN
A
1
777A
ECH8661
Power MOSFET
–
–
Ω
Ω
30V, 7A, 24m
, 30V, 5.5A,
39m ,
Complementary Dual ECH8
F
e
atures
•
ON-resistance Nch:
R (on)1=18m
(typ.), Pch: ON-resistance
R (on)1=30m
(typ.)
The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
Ω
Ω
DS
DS
•
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Protection diode in
•
•
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
N-channel
30
P-channel
–
–
30
Unit
V
V
D
S
S
V
±20
7
±20
V
GSS
I
–
–
5.5
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
T
o
tal D
i
s
s
i
p
at
i
o
n
I
PW 10 s,
duty cyc
l
e
1
%
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm) 1un
i
t
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm)
40
–
–
40
A
≤
μ
≤
DP
P
P
1.3
1.5
W
W
°C
°C
×
D
T
×
Channel
T
e
mperature
Storage
T
e
mperature
T
c
h
150
–
–
55 to +150
T
s
tg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product &
Package
I
n
f
o
rmat
i
o
n
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
Top View
2.9
ECH8661-TL-H
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
0.15
8
5
TG
0 to 0.02
L
O
T No.
TL
4
1
El
e
ctr
i
c
al Connect
i
o
n
0.65
0.3
8
7
6
5
1 :
S
ource1
2 : Gate1
3 :
S
ource2
4 : Gate2
5 : Dr
a
i
n
2
6 : Dr
a
i
n
2
7 : Dr
a
i
n
1
8 : Dr
a
i
n
1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM/72110PE TKIM TC-00002431
No. A1777-1/9
ECH8661
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
max
[N
–
channe
l
]
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=1m
A
, V
=
0V
30
(
B
R
)
D
S
S
D
GS
I
V
=30
V
, V
=
0V
1
A
A
μ
D
S
S
DS GS
I
V
=±16
V
, V
=
0V
±10
2.6
μ
GSS
GS DS
V
(
o
f
f)
|
V
=10
V
, I
=
1mA
1.2
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
I
=10
V
, I
=
3.5A
D
3.7
S
|
DS
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
=3.5
A
, V
=
10V
GS
18
29
24
41
55
m
Ω
Ω
Ω
DS
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=2
A
, V
=
4.5V
GS
m
m
I
D
=2
A
, V
=
4V
GS
39
I
n
put Capac
i
t
ance
C
i
s
s
V
=10
V
,
f
=1MHz
=10
V
,
f
=1MHz
=10
V
,
f
=1MHz
710
120
72
pF
DS
Output Capac
i
t
ance
Coss
Crss
V
DS
pF
pF
ns
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
V
DS
t
t
t
t
(
o
n)
10
d
r
Ri
s
e
T
i
m
e
25
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
43
ns
d
f
25
ns
T
o
tal Gate Cha
r
g
e
Qg
11.8
2.4
2.0
0.79
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
[
P
-channe
l
]
Qgs
Qgd
V
=15
V
, V
=
10
V
, I
=
7A
GS
DS
D
V
SD
I =7
A
,
V
=
0V
S GS
1.2
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=
–
–
1m
A
, V
=
0V
–
–
30
V
(
B
R
)
D
S
S
D GS
I
V
=
–
–
30
V
, V
=
0V
–
–
1
±10
A
A
μ
D
S
S
DS
GS
I
V
=±16
V
, V
=
0V
GS DS
μ
GSS
V
(
o
f
f)
|
V
=
–
–
10
V
, I
=
–
–
1mA
DS D
–
–
1.2
–
–
2.6
V
GS
yfs
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
I
=
–
–
10
V
, I
=
–
–
2.5A
D
5.2
30
S
|
DS
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
=
–
–
2.5
A
, V
=
–
–
10V
GS
39
77
82
m
Ω
Ω
Ω
DS
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=
–
–
1.5
A
, V
=
–
–
4.5V
GS
55
m
m
I
D
=
–
–
1.5
A
, V
=
–
–
4V
GS
58
I
n
put Capac
i
t
ance
C
i
s
s
600
145
110
7.2
23
pF
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=
–
–
10
V
,
f
=1MHz
pF
pF
ns
DS
t
t
t
t
(
o
n)
d
r
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
63
ns
d
f
42
ns
T
o
tal Gate Cha
r
g
e
Qg
13
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=
–
–
15
V
, V
=
–
–
10
V
, I
=
–
–
5.5A
GS
1.8
3.2
–
–
0.82
DS
D
V
SD
I =
–
–
5.5
A
,
V
=
0V
S GS
–
–
1.2
No. A1777-2/9
ECH8661
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
[N
–
channe
l
]
[
P
-channe
l
]
V =15V
DD
V =
–
–
15V
DD
V
IN
V
IN
10V
0V
0V
–
–
10V
I
=3.5A
I =
–
–
2.5A
D
R =6
Ω
L
D
V
IN
V
IN
R =4.3
Ω
L
D
V
OUT
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
P
W
=10
μ
s
D.C.
≤
1%
G
G
ECH8661
ECH8661
P. G
P. G
50
Ω
50
Ω
S
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
ECH8
Sh
i
p
p
i
n
g
memo
Pb Free and Ha
l
o
gen Free
ECH8661-TL-H
3,000pcs./reel
[Nch]
[Nch]
=10V
I
D
— V
DS
I
— V
D GS
7
6
5
4
3
2
14
13
12
11
10
9
V
DS
8
7
6
5
4
=3.0V
GS
V
3
1
0
2
1
0
0
0
0.2
0.4
0.6
0.8
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-to-Source
V
o
ltage, V
DS
— V
IT13723
Gate-to-Source
V
o
ltage, V
GS
— V
IT13724
R
(
o
n)
–
– V
R
(
o
n)
–
–
T
a
[Nch]
[Nch]
DS
GS
DS
80
70
60
50
40
30
20
70
60
50
40
30
20
Ta=25
°
C
I
=2A
D
3.5A
10
0
10
0
0
2
4
6
8
10
12
14
16
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
GS
— V
IT13725
Ambient Temperature, Ta
–
–
°
C
IT13726
No. A1777-3/9
ECH8661
[Nch]
=10V
[Nch]
=0V
|
y
fs
|
— I
I
— V
D
S
S
D
3
2
10
V
V
DS
GS
7
10
5
7
5
3
2
3
2
1.0
7
5
1.0
7
5
3
2
3
2
0.1
7
5
3
2
0.1
7
0.01
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
0.1
1.0
10
Drain Current, I
–
– A
D
Diode Forward
V
o
ltage, V
–
– V
SD
IT13727
IT13728
SW
T
i
m
e
–
– I
[Nch]
C
i
s
s, Coss, Crss
–
– V
[Nch]
D
DS
100
2
f=1MHz
7
5
1000
Ciss
7
5
3
2
3
2
t (on)
d
10
7
5
100
7
5
V
V
=15V
3
2
DD
=10V
GS
3
2
3
5
7
2
3
5
7
2
3
0
5
10
15
20
25
30
0.1
1.0
10
Drain Current, I
–
– A
IT13729
Drain-to-Source
V
o
ltage, V
— V
IT13730
D
DS
V
—
Q
g
[Nch]
A S
O
[Nch]
GS
100
7
5
10
9
V
=15V
=7A
≤
10
μ
s)
I
=40A (PW
DP
DS
I
D
3
2
8
I =7A
10
7
5
D
7
3
2
6
1.0
5
7
5
4
Operation in this
3
2
area is limited by R
(on).
DS
3
0.1
7
5
2
Ta=25
°
C
Single pulse
3
2
1
0
When mounted on ceramic substrate
(900mm
2
×
0.8mm) 1unit
0.01
0.01
0
1
2
3
4
5
6
7
8
9
10
11
12
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0.1
1.0
Total Gate Charge, Qg
–
–
n
C
Drain-to-Source
V
o
ltage, V
–
– V
DS
IT15732
[Pch]
IT15731
I
— V
DS
I
— V
[Pch]
D
D GS
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
–
–
9
V
DS
=
–
–
10V
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
–
–
0.5
0
–
–
1
0
0
–
–
0.1
–
–
0.2
–
–
0.3
–
–
0.4
–
–
0.5
–
–
0.6
–
–
0.7
–
–
0.8
–
–
0.9
–
–
1.0
IT14855
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
–
–
3.0
–
–
3.5
–
–
4.0
Drain-to-Source
V
o
ltage, V
DS
— V
Gate-to-Source
V
o
ltage, V
GS
— V
IT14856
No. A1777-4/9
ECH8661
R
(
o
n)
–
– V
GS
[Pch]
Ta=25
°
C
R
(
o
n)
–
–
T
a
DS
[Pch]
DS
200
180
160
140
120
100
80
100
90
80
70
60
50
40
30
I
=
–
–
1.5A
D
–
–
2.5A
60
40
20
10
20
0
0
–
–
2
–
–
4
–
–
6
–
–
8
–
–
10
–
–
12
–
–
14
–
–
16
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
GS
— V
IT15727
Ambient Temperature, Ta
–
–
°
C
IT15728
[Pch]
=0V
|
y
fs
|
— I
[Pch]
I
— V
D
S
S
D
2
2
V
V
=
–
–
10V
GS
DS
–
–
10
7
5
3
2
10
7
5
–
–
1.0
3
2
7
5
3
2
1.0
7
–
–
0.1
7
5
5
3
2
3
2
–
–
0.01
7
5
3
2
0.1
7
–
–
0.001
2
3
5
7
2
3
5
7
–
–
1.0
2
3
5
7
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
–
–
0.01
–
–
0.1
Drain Current, I
–
– A
D
IT14859
Diode Forward
V
o
ltage, V
SD
— V
IT14860
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
[Pch]
[Pch]
D
DS
100
2
f=1MHz
t
d(off)
7
5
1000
t
f
7
5
3
2
3
2
10
7
5
100
V
V
=
–
–
15V
=
–
–
10V
7
5
DD
GS
3
2
3
5
7
2
3
5
7
2
0
–
–
5
–
–
10
–
–
15
–
–
20
–
–
25
–
–
30
–
–
0.1
–
–
1.0
–
–
10
IT14861
Drain Current, I
–
– A
IT14862
Drain-to-Source
V
o
ltage, V
— V
D
DS
V
—
Q
g
[Pch]
[Pch]
A S
O
GS
–
–
10
–
–
100
7
5
V
=
–
–
10V
I
DP
=
–
–
40A (
PW
≤
10
μ
s
)
DS
=
–
–
5.5A
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
I
D
3
2
–
–
10
7
5
I =
–
–
5.5A
D
3
2
–
–
1.0
7
5
Operation in this
3
2
area is limited by R
(on).
DS
–
–
0.1
7
5
Ta=25
°
C
Single pulse
3
2
–
–
1
0
When mounted on ceramic substrate
(900mm
2
×
0.8mm) 1unit
–
–
0.01
–
–
0.1
2
3
5
7
2
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10 11 12 13
–
–
1.0
–
–
10
Total Gate Charge, Qg
–
–
n
C
IT15733
Drain-to-Source
V
o
ltage, V
DS
— V
IT15729
No. A1777-5/9
ECH8661
P
—
T
a
[Nch/Pch]
D
1.8
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT15730
Ambient Temperature, Ta
–
–
°
C
No. A1777-6/9
ECH8661
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
ECH8661-TL-H
No. A1777-7/9
ECH8661
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
ECH8661-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1777-8/9
ECH8661
Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1777-9/9
