onsemi-ECH8693R-TL-W
| Part # | onsemi-ECH8693R-TL-W |
Download  | onsemi-ECH8693R-TL-W |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
onsemi
andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or
subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.
onsemi
reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ECH8693R
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
24 V, 7 m
Ω
, 14 A, Dual N-Channel
ww
w
.onsemi.com
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines.
Best suited for 1-2 cells Lithium-ion Battery applications.
V
R
(on) Max
I
DSS
DS
D Max
14 A
Features
Low On-Resistance
2.5 V drive
Common-Drain Type
ESD Diode-Protected Gate
Built-in Gate Protection Resistor
Pb-Free, Halogen Free and RoHS compliance
7 m
Ω
@ 4.5 V
7.5 m
Ω
@ 4.0 V
9.1 m
Ω
@ 3.1 V
10.5 m
Ω
@ 2.5 V
24 V
ELECTRICAL CONNECTION
N-Channel
Typical Applications
8
7
6
5
1-2 cells Lithium-ion Battery Charging and Discharging Switch
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING
at Ta = 25
C
(Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Value
Unit
V
V
V
24
DSS
GSS
12.5
V
1
2
3
4
I
14
A
D
Drain Current (Pulse)
I
60
A
DP
PW
10
s, duty cycle
1%
MARKING
Power Dissipation
Surface mounted on ceramic substrate
(900 mm
2
0.8 mm) 1 unit
Total Dissipation
P
P
1.4
W
D
T
UQ
Surface mounted on ceramic substrate
(900 mm
2
0.8 mm)
1.5
W
LOT No.
Junction Temperature
Storage Temperature
Tj
150
C
C
SOT-28FL / ECH8
Tstg
55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
ORDERING INFORM
A
T
ION
See detailed ordering and shipping
information on page 5 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
Symbol
Value
Unit
R
JA
89.2
C/W
Surface mounted on ceramic substrate
(900 mm
2
0.8 mm) 1 unit
© Semiconductor Components Industries, LLC, 2016
December 2016 – Rev. 3
1
Publication Order Number :
ECH8693R/D
ECH8693R
ELECTRICAL CHARACTERISTICS
at Ta
25
C
(Note 2)
Value
typ
Parameter
Symbol
V(
Conditions
= 1 mA, V
= 0 V
GS
Unit
min
24
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
)
I
V
A
A
V
BR DSS
D
I
I
V
V
V
V
= 20 V, V
= 0 V
1
DSS
GSS
DS
GS
DS
DS
GS
DS
=
8 V, V
= 0 V
1
V
(th)
= 10 V, I
= 1 mA
0.5
1.3
GS
FS
D
Forward Transconductance
g
= 10 V, I
= 5 A
8
S
D
I
I
I
I
= 5 A, V
= 4.5 V
= 4.0 V
= 3.1 V
4.4
4.6
5.2
6
5.6
5.8
7
7.5
m
m
m
m
ns
ns
s
s
ns
ns
s
s
nC
nC
nC
V
D
D
D
D
GS
GS
GS
= 5 A, V
= 5 A, V
Static Drain to Source On-State
Resistance
R
(on)
DS
6.5
9.1
= 2.5 A, V
= 2.5 V
7.5
10.5
GS
Turn-ON Delay Time
Rise Time
t (on)
d
545
525
18.65
22.2
545
525
1,130
410
13
t
r
See Fig. 1
(Note 3)
See Fig. 2
(Note 3)
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Turn-ON Delay Time
Rise Time
t (on)
d
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
Qgs
Qgd
3
V
I
= 10 V, V
= 4.5 V, I
= 14 A
GS D
DS
2.4
V
= 14 A, V
= 0 V
GS
0.78
1.2
SD
S
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : The fall switching time is dependent on the input pulse width.
Fig.1 Switching Time Test Circuit 1
Fig.2 Switching Time Test Circuit 2
V
=10V
V
V
=10V
DD
D
V
IN
IN
DD
4.5V
0V
4.5V
0V
I
=7A
D
I
=7A
D
V
V
IN
IN
R =1.4
L
R =1.4
L
V
D
V
OUT
OUT
PW=10
s
D.C.
1%
PW
10ms
D.C.
1%
R
R
g
g
G
G
ECH8693R
ECH8693R
P
.
G
50
P
.
G
S
50
S
R =1k
g
R =1k
g
2
ECH8693R
I
D
— V
I
— V
D GS
DS
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
14.0
12.0
V
=10V
DS
T
a
=25
C
10.0
8.0
6.0
4.0
2.0
0
1.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
Drain to Source Voltage, V
— V
Gate to Source Voltage, V
— V
GS
DS
R
(on)
–
– V
R
(on)
–
– Ta
DS
DS
GS
14
12
20
18
T
a
=25
C
16
10
8
14
12
5A
10
8
6
I =2.5A
D
6
4
2
0
4
2
0
0
2
4
6
8
10
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate to Source Voltage, V
— V
Ambient Temperature, Ta
–
–
C
GS
I
S
— V
SD
S/W Time
–
– I
D
100k
3
2
V
V
=10V
DD
GS
V
=0V
GS
7
5
=4.5V
10
7
5
PW=10
μ
s
3
2
3
2
10k
7
1.0
5
7
5
3
2
3
2
1k
7
5
0.1
7
5
3
2
t
r
3
2
0.01
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
2
3
5
7
2
3
5
7
1.0
10
Forward Source to Drain Voltage, V
— V
Source Current, I
–
– A
S
S/W Time
–
–
I
nput
Pulse Width
SD
V
—
Q
g
GS
4.5
10k
1k
V
V
=10V
=4.5V
V
=10V
DD
GS
DS
4.0
3.5
I =14A
D
I =7A
D
3.0
2.5
2.0
1.5
1.0
100
10
1
t
r
0.5
0
t (on)
d
0.1
0.01
0
2
4
6
8
10
12
14
0.1
1.0
10
100
Input Pulse Width
–
–
m
s
T
o
tal Gate Charge, Qg
–
–
n
C
3
ECH8693R
S O A
P
— Ta
D
2
1.6
1.5
Surface mounted on ceramic substrate
100
7
5
3
2
I
=60A(PW
10
s)
DP
(900mm
2
0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
I
=14A
D
1ms
10
7
5
3
2
1.0
7
5
3
2
Operation in this
area is limited by R
(on).
DS
0.1
7
5
3
2
T
a
=25
C
Single pulse
0.2
0
Surface mounted on ceramic substrate
(900mm
2
0.8mm) 1unit
0.01
0.01
2
3
5 7
2
3
5 7
2
3
5 7
10
2
3
5 7
100
0
20
40
60
80
100
120
140 150
0.1
1.0
Drain to Source Voltage, V
— V
Ambient
T
e
mperature,
T
a
—
C
DS
R
JA
—
P
ulse
Time
100
7
Duty Cycle=0.5
5
3
0.2
2
0.1
0.05
10
7
5
3
0.02
0.01
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
Surface mounted on ceramic substrate
3
(900mm
2
0.8mm) 1unit
2
0.001
0.000001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
2
3
5 7
1.0
0.00001
0.0001
0.001
0.01
0.1
Pulse Time, PT
–
– s
4
ECH8693R
PACKAGE DIMENSIONS
unit : mm
SOT-28FL / ECH8
CASE 318BF
ISSUE O
to
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
Recommended
Soldering Footprint
7 : Drain
8 : Drain
0.4
0.65
ORDERING INFORMATION
Device
Marking
UQ
Package
Shipping (Qty / Packing)
3,000 / Tape & Reel
SOT-28FL / ECH8
(Pb-Free / Halogen Free)
ECH8693R-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the ECH8693R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support
systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
5
