onsemi-EFC2J004NUZTDG
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EFC2J004NUZ
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12 V, 7.1 m
Ω
, 14 A, Dual N-Channel
ww
w
.onsemi.com
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
V
R
SS
(on) Max
I
SSS
S Max
7.1 m
Ω
@ 4.5 V
7.7 m
Ω
@ 3.8 V
9.5 m
Ω
@ 3.1 V
12.4m
Ω
@ 2.5 V
Features
2.5 V Drive
2 kV ESD HBM
Common-Drain Type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
12 V
14 A
ELECTRICAL CONNECTION
N-Channel
Applications
4, 6
1-Cell Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
at
Ta = 25
C
(Notes 1, 2)
Parameter
Source to Source Voltage
Gate to Source Voltage
5
2
Symbol
Value
Unit
V
V
12
8
14
SSS
GSS
V
V
1 : Source1
2 : Gate1
Source Current (DC)
I
A
S
3 : Source1
4 : Source2
5 : Gate2
Source Current (Pulse)
PW
10
s, duty cycle
1%
Total Dissipation (Note 2)
A
I
60
SP
P
1.5
W
C
C
T
6 : Source2
1, 3
Junction Temperature
Storage Temperature
Tj
150
Tstg
55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
WLCSP6, 2.11×1.18×0.10
THERMAL RESISTANCE RATINGS
GENERIC
MARKING DIAGRAM
Parameter
Symbol
Value
Unit
Junction to Ambient (Note 2)
C/W
R
JA
83
NA
AYWZZ
Note 2 : Surface mounted on ceramic substrate (5000 mm
2
0.8 mm).
NA =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
W
= Work Week
ZZ =
Assembly Lot
= Pb-Free Package
ORDERING INFORM
A
T
ION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
February 2017 – Re
v
. 1
1
Publication Order Number :
EFC2J004NUZ/D
EFC2J004NUZ
ELECTRICAL CHARACTERISTICS
at Ta
25
C
(Notes 3, 4)
Value
typ
Parameter
Symbol
Conditions
Unit
V
min
12
max
Source to Source Breakdown
Voltage
V(
)
I
= 1 mA, V
= 0 V
Test Circuit 1
BR SSS
S
GS
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
I
I
V
V
V
= 10 V, V
= 0 V
Test Circuit 1
= 0 V
Test Circuit 2
1
A
A
V
SSS
GSS
SS
GS
SS
GS
=
8 V, V
1
1.3
SS
V
(th)
= 6 V, I
= 1 mA
Test Circuit 3
0.4
3.7
4.1
4.6
5.8
GS
S
I
I
= 5 A, V
= 4.5 V
= 3.8 V
Test Circuit 4
Test Circuit 4
5.4
5.9
6.7
8.4
15
7.1
m
Ω
m
Ω
m
Ω
m
Ω
s
S
S
GS
GS
= 5 A, V
= 5 A, V
= 5 A, V
7.7
Static Source to Source On-State
Resistance (Note 4)
R
(on)
SS
I
I
= 3.1 V
= 2.5 V
Test Circuit 4
Test Circuit 4
9.5
S
S
GS
GS
12.4
Turn-ON Delay Time
Rise Time
t (on)
d
t
35
s
r
V
= 5 V, V
= 3.8 V, I
= 5 A
S
SS
Rg = 10 k
Ω
GS
t (off)
d
Test Circuit 5
Turn-OFF Delay Time
Fall Time
100
75
s
t
f
s
V
I
= 6 V, V
= 4.5 V, I
= 14 A
S
SS
GS
36
Qg
V
nC
V
Total Gate Charge
Test Circuit 6
Forward Source to Source Voltage
= 3 A, V
= 0 V
GS
Test Circuit 7
0.76
F(S-S)
S
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 4 : Mounted on ON Semiconductor board.
2
EFC2J004NUZ
Test circuits are example of measuring FET1 side
Test Circuit 2
Test Circuit 1
I
V
/ I
GSS
(BR)SSS SSS
S2
S2
G2
G2
G1
A
G1
V
SS
A
V
GS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 3
(th)
Test Circuit 4
R
(on)
V
SS
GS
S2
S2
IS
G2
G2
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
G1
V
SS
G1
V
GS
V
GS
S1
S1
Test Circuit 5
Test Circuit 6
Qg
t (on),
t t (off),
t
f
d
r, d
S2
S2
RL
A
G2
G1
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
I
=1mA
G
RL
Rg
V
SS
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
V
SS
PG
DC
Test Circuit 7
V
F(S-S)
S2
I
S
G2
G1
V
VGS=0V
When FET1 is
measured,+4.5V is added to
GS
of FET2.
S1
V
When FET2 is measured, the position of FET1 and FET2 is switched.
3
EFC2J004NUZ
I
S
— V
I
— V
SS
S
GS
6.0
15
12
V
=6V
Ta=25
C
SS
5.0
4.0
3.0
2.0
9
6
3
0
1.0
0
0
1
0
0.01
0.02
0.03
0.04
0.05
0.06
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Source to Source
V
o
ltage, V
SS
— V
Gate to Source
V
o
ltage, V
–
– V
GS
R
(on)
–
– V
R
(on)
–
– Ta
SS
GS
SS
10
9
14
12
Ta=25
C
I =5A
S
8
10
8
7
6
6
5
4
2
4
3
2
3
4
5
6
7
8
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate to Source
V
o
ltage, V
GS
— V
Ambient Temperature, Ta
–
–
C
I
— V
SW Time
–
– R
S
F(S-S)
g
1000
10
7
7
5
V
=0V
5
GS
3
2
3
2
1.0
7
5
100
7
5
3
2
0.1
3
2
7
5
3
2
t
10
7
5
r
0.01
7
V
V
=5V
=3.8V
5
SS
3
2
3
2
GS
I =5A
S
0.001
1.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
5
7
2
10
Forward Source to Source
V
o
ltage, V
— V
Gate Resistance, Rg
–
–
k
F(S-S)
V
—
Q
g
S O A
GS
4.5
4.0
3.5
3.0
2.5
2.0
100
7
V
=6V
SS
5
(PW
10
s)
=60A
I =14A
I
I =14A
SP
S
S
3
2
10
7
5
10ms
3
2
1.0
7
5
Operation in this area
is limited by R
(on).
SS
3
2
1.5
1.0
0.1
7
5
Ta=25
C
Single pulse
3
2
0.5
0
Surface mounted on ceramic substrate
(5000mm
2
0.8mm)
0.01
0.01
0
5
10
15
20
25
30
35
40
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
0.1
1.0
Total Gate Charge, Qg
–
–
n
C
Source to Source
V
o
ltage, V
— V
SS
4
EFC2J004NUZ
P
— Ta
T
1.6
Surface mounted on ceramic substrate
(5000mm
2
0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
200
Ambient Temperature, Ta
–
–
C
R
—
P
ulse
Time
JA
100
7
5
Duty Cycle=0.5
3
2
0.2
0.1
10
7
5
3
2
1.0
7
5
3
2
Surface mounted on ceramic substrate
(5000mm
2
0.8mm)
0.1
0.00001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.0001
0.001
0.01
0.1
1.0
10
Pulse Time, PT
–
– s
5
EFC2J004NUZ
PACKAGE DIMENSIONS
unit : mm
WLCSP6, 2.11×1.18×0.10
CASE 567NP
ISSUE B
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
D
A
B
E
MILLIMETERS
DIM
A
b
b1
b2
D
E
e
e2
MIN
0.08
0.22
0.27
0.575
NOM
0.10
0.25
0.30
0.605
2.11 BSC
1.18 BSC
0.55 BSC
0.6775 BSC
MAX
0.12
0.28
0.33
0.635
PIN A1
REFERENCE
2X
0.05
0.05
C
C
2X
TOP VIEW
SIDE VIEW
A
0.05
0.05
C
RECOMMENDED
SOLDERING FOOTPRINT*
C
SEATING
PLANE
4X
C
2X
0.605
0.25
PACKAGE
OUTLINE
4X
b2
0.05
e2
0.55
PITCH
M
C A
B
1
2
3
4X
0.30
e
1
0.678
PITCH
DIMENSIONS: MILLIMETERS
6
5
4
4X
b1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mountin
g
T
e
chniques Reference Manual, SOLDERRM/D.
2X
b
M
0.05
C A B
M
0.05
BOTTOM VIEW
C A B
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
ORDERING INFORMATION
Device
Marking
NA
Package
Shipping (Qty / Packing)
5,000 / Tape & Reel
WLCSP6, 2.11×1.18×0.10
(Pb-Free / Halogen Free)
EFC2J004NUZTDG
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC2J004NUZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support
systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an
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