onsemi-EFC4615R-TR
| Part # | onsemi-EFC4615R-TR |
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Order
i
n
g number : EN
A
1
629
S
A
NYO
S
em
i
conductors
DATA S
HEET
N-Channel S
i
li
c
on
M
OSFET
G
e
nera
l
–
Purpose Sw
i
t
ch
i
n
g Device
A
p
p
l
i
c
at
i
o
ns
EFC4615R
F
e
atures
•
2.5V drive
•
Best suited for LiB charging and discharging switch
Common-drain type
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Sou
r
c
e-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Sou
r
c
e Current
(
D
C
)
Sou
r
c
e Current
(
P
u
l
s
e)
T
o
tal D
i
s
s
i
p
at
i
o
n
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
24
±12
6
SSS
V
V
GSS
I
S
A
I
PW 10 s,
duty cyc
l
e
1
%
60
A
≤
μ
≤
SP
P
When mounted on ceram
i
c
s
ubstrate
(
5
000mm
2
0.8mm)
1.6
150
W
°C
°C
×
T
Channel
T
e
mperature
Storage
T
e
mperature
T
c
h
T
s
tg
–
–
55 to +150
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
: EFCP
7067-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 5,000 pcs./reel
1.46
4
3
T
a
p
i
n
g
T
y
p
e :
T
R
M
a
rk
i
n
g
TR
FQ
L
O
T No.
1
2
El
e
ctr
i
c
al Connect
i
o
n
1
0.65
Rg
2
1
4
2
3
1 :
S
ource1
2 : Gate1
3 : Gate2
Rg
4 :
S
ource2
3
0.3
S
A
NYO : EFC
P
1515-4CC-037
Rg=200
Ω
4
No. A1629-1/5
62310PF TK IM TC-00002379
EFC4615R
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =1mA,
V =0V
GS
T
e
st Circuit 1
T
e
st Circuit 1
T
e
st Circuit 2
T
e
st Circuit 3
T
e
st Circuit 4
T
e
st Circuit 5
T
e
st Circuit 5
T
e
st Circuit 5
T
e
st Circuit 5
T
e
st Circuit 7
T
e
st Circuit 7
T
e
st Circuit 7
T
e
st Circuit 7
24
V
μ
A
μ
A
V
(BR)SSS
S
I
I
V
=
2
0V, V
=0V
GS
1
SSS
SS
GS
V
V
V
=±8
V
, V
=
0V
SS
±10
1.3
GSS
V
(off)
GS
=10V, I
=1mA
0.5
SS
S
Forward Transfer Admittance
|
yfs
|
=10V, I
=
3
A
5.4
S
SS
S
R
R
R
R
(
o
n
)
1
I =3
A
,
V
=
4.5V
S GS
19
21
24
28
27
28
31
33
44
52
m
m
m
m
Ω
Ω
Ω
Ω
SS
SS
SS
SS
(
o
n
)
2
(
o
n
)
3
(
o
n
)
4
I =3
A
,
V
=
4.0V
S GS
Stat
i
c
S
ou
r
c
e-to-Source On-State Res
i
s
tance
I =3
A
,
V
=
3.1V
S GS
33
I =3
A
,
V
=
2.5V
S GS
39
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
t
t
t
t
(
o
n)
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
13
ns
d
r
235
335
360
8.8
1
ns
ns
ns
nC
V
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
d
f
T
o
tal Gate Cha
r
g
e
Forward Source-to-Source
V
o
l
t
age
Qg
V
SS
=10
V
, V
=
4.5
V
, I
=
6A
GS
S
V
F
(
S
-S)
I =6
A
,
V
=
0V
S GS
T
e
st Circuit 6
1.2
T
e
st c
i
r
c
u
i
t
s are examp
l
e
o
f measur
i
n
g FET1
s
i
d
e
T
e
st C
i
r
c
u
i
t 1
T
e
st C
i
r
c
u
i
t 2
(
+
) /
(
–
–
)
V
/ I
I
GSS
SSS SSS
S2
S2
G2
G2
G1
G1
S1
S2
S1
S2
IT11565
IT11566
T
e
st C
i
r
c
u
i
t 3
T
e
st C
i
r
c
u
i
t 4
|
y
fs
|
V
(
o
f
f)
GS
G2
G2
G1
10V 1mA
G1
S1
S1
IT11567
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1629-2/5
EFC4615R
T
e
st C
i
r
c
u
i
t 5
(
o
n)
T
e
st C
i
r
c
u
i
t 6
R
V
F
(
S
-S)
SS
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
T
e
st C
i
r
c
u
i
t 8
Qg
T
e
st C
i
r
c
u
i
t 7
t (
o
n
)
,
t , t
(
o
f
f), t
f
d
r d
S2
V
=10V
DD
I =3A
S
R =3.33
Ω
L
V
OUT
S2
G2
V
IN
G2
G1
G1
P
W
=10
μ
s
D.C.
≤
1%
S1
IT11571
IT15409
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
I
S
— V
GS
R
(
o
n)
–
– V
SS GS
5.0
80
70
60
50
40
30
V
=10V
Ta=25
°
C
I =3A
SS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
S
20
10
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
IT15254
Gate-to-Source
V
o
ltage, V
GS
— V
IT15253
Gate-to-Source
V
o
ltage, V
GS
— V
R
(
o
n)
–
–
T
a
|
y
fs
|
— I
SS
S
10
70
60
50
40
30
20
V
=10V
SS
7
5
3
2
10
0
1.0
7
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
IT15255
2
3
5
7
2
3
5
7
0.1
1.0
10
IT15256
Source Current, I
–
– A
Ambient Temperature, Ta
–
–
°
C
S
No. A1629-3/5
EFC4615R
I
S
— V
F
(
S
-S)
SW
T
i
m
e
–
– I
S
1000
10
7
V
V
=10V
SS
GS
V
=0V
GS
7
5
=4.5V
3
2
5
3
2
1.0
7
5
3
2
100
0.1
7
5
7
5
3
2
3
2
0.01
7
5
t (on)
d
3
2
10
0.001
7
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
5
7
2
3
5
7
2
3
5 7
0.1
1.0
10
Forward Source-to-Source
V
o
ltage, V
— V
Source Current, I
–
– A
S
IT15257
IT15258
F(S-S)
V
—
Q
g
A S
O
GS
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
=10V
SS
100
7
5
3
2
I
=60A (PW
≤
10
μ
s)
SP
I =6A
S
10
7
5
3
2
I =6A
S
1.0
7
5
3
2
Operation in this area
is limited by R
(on).
SS
0.1
7
5
3
2
Ta=25
°
C
Single pulse
0.5
0
When mounted on ceramic substrate (5000mm
2
×
0.8mm)
0.01
0.01
0
1
2
3
4
5
6
7
8
9
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0.1
1.0
10
Total Gate Charge, Qg
–
–
n
C
IT15260
Source-to-Source
V
o
ltage, V
SS
— V
IT15534
P
—
T
a
T
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(5000mm
2
×
0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
IT15535
No. A1629-4/5
EFC4615R
Note on usage : Since the EFC4615R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
A
n
y and a
l
l
S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. products descr
i
b
ed or conta
i
n
ed here
i
n
a
r
e
, w
i
t
h regard to
“
s
tandard app
l
i
c
at
i
o
n”,
i
n
tended
f
o
r the use as general e
l
e
ctron
i
c
s equ
i
p
ment
(
h
ome app
l
i
a
nces,
A
V
e
qu
i
p
ment,
commun
i
c
at
i
o
n dev
i
c
e, o
f
fi
c
e equ
i
p
ment,
i
n
dustr
i
a
l equ
i
p
ment etc.
)
. T
h
e products ment
i
o
ned here
i
n
s
ha
l
l
n
ot
be
i
n
tended
f
o
r use
f
o
r any “spec
i
a
l app
l
i
c
at
i
o
n”
(
m
ed
i
c
al equ
i
p
ment whose purpose
i
s
t
o susta
i
n lif
e
,
ae
r
ospace
i
n
strument, nuc
l
e
ar control dev
i
c
e, burn
i
n
g app
l
i
a
nces, transportat
i
o
n mach
i
n
e, tra
f
fic
s
i
g
nal
s
y
s
tem, sa
f
e
ty equ
i
p
ment etc.) that sha
l
l r
e
qu
i
re
e
xtreme
l
y
h
i
g
h
l
e
v
e
l of re
l
i
a
b
i
li
t
y and can d
i
r
e
ct
l
y
t
hreaten
human
l
iv
e
s
i
n
c
ase of
f
a
i
l
u
re or ma
l
f
u
nct
i
o
n of the product or may cause harm to human bod
i
e
s, nor sha
l
l
t
hey
grant any guarantee thereo
f
. If y
o
u shou
l
d i
n
tend to use our products
f
o
r app
l
i
c
at
i
o
ns outs
i
d
e the standard
app
l
i
c
at
i
o
ns of our customer who
i
s
c
ons
i
d
e
r
ing
s
uch use and/or outs
i
d
e the scope of our
i
n
tended standard
app
l
i
c
at
i
o
ns, p
l
e
ase consu
l
t
w
i
t
h us pr
i
o
r to the
i
n
tended use.
I
f
t
here
i
s
n
o consu
l
t
at
i
o
n or
i
n
qu
i
ry
b
e
f
o
re the
i
n
tended use, our customer sha
l
l
b
e so
l
e
l
y r
e
spons
i
b
l
e f
o
r the use.
Spec
i
fi
c
at
i
o
ns of any and a
l
l
S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. products descr
i
b
ed or conta
i
n
ed here
i
n
s
t
i
p
u
l
a
te
the per
f
o
rmance, character
i
s
t
i
c
s, and
f
u
nct
i
o
ns of the descr
i
b
ed p
r
oducts
i
n
t
he
i
n
dependent state, and are
not guarantees of the per
f
o
rmance, character
i
s
t
i
c
s, and
f
u
nct
i
o
ns of the descr
i
b
ed p
r
oducts as mounted
i
n
t
he
customer
‘
s
p
r
oducts or equ
i
p
ment.
T
o v
e
r
ify
s
y
mptoms and states that cannot be eva
l
u
ated
i
n
a
n
i
n
dependent dev
i
c
e, the customer shou
l
d
a
l
w
ays eva
l
u
ate and test dev
i
c
es mounted
i
n
t
he customer
‘
s
p
r
oducts or equ
i
p
ment.
S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. assumes no respons
i
b
i
li
t
y for equ
i
p
ment
f
a
i
l
u
res that resu
l
t fr
o
m us
i
n
g
p
r
oducts at va
l
u
es that exceed, even momentar
i
ly, r
a
ted va
l
u
es
(
s
uch as max
i
m
um rat
i
n
gs, operat
i
n
g
cond
i
t
i
o
n ranges, or other parameters)
l
i
s
ted
i
n
p
r
oducts spec
i
fi
c
at
i
o
ns of any and a
l
l
S
A
NYO
S
em
i
c
onductor
Co.,
L
t
d. products descr
i
b
ed or conta
i
n
ed here
i
n
.
S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. str
i
v
e
s to supp
l
y
h
i
g
h-qua
l
i
t
y h
i
g
h-re
l
i
a
b
i
li
t
y products, however, any and a
l
l
sem
i
c
onductor products
f
a
i
l
o
r ma
l
f
u
nct
i
o
n w
i
t
h some probab
i
li
t
y.
I
t is
p
oss
i
b
l
e
t
hat these probab
i
li
s
t
i
c f
a
i
l
u
res
or ma
l
f
u
nct
i
o
n cou
l
d
g
i
ve ri
s
e to acc
i
d
ents or events that cou
l
d
e
ndanger human
l
iv
e
s, troub
l
e
t
hat cou
l
d
g
i
ve
ri
s
e to smoke or
f
ir
e
, or acc
i
d
ents that cou
l
d
c
ause damage to other property. When des
i
g
n
i
n
g equ
i
p
ment,
adopt sa
f
e
ty measures so that these k
i
n
ds of acc
i
d
ents or events cannot occur. Such measures
i
n
c
l
u
de but
a
r
e not
l
i
m
i
t
ed to protect
i
ve
c
i
r
c
u
i
t
s and error prevent
i
o
n c
i
r
c
u
i
t
s for sa
f
e
d
es
i
g
n, redundant des
i
g
n, and
structural des
i
g
n.
In
t
he event that any or a
l
l
S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. products descr
i
b
ed or conta
i
n
ed here
i
n
a
r
e
contro
l
l
e
d under any of app
l
i
c
ab
l
e l
o
cal export control
l
a
ws and regu
l
a
t
i
o
ns, such products may requ
i
re the
export
l
i
c
ense
f
r
o
m the author
i
t
i
e
s concerned
i
n
a
ccordance w
i
t
h the above
l
a
w.
No
p
a
r
t of th
i
s
p
ub
l
i
c
at
i
o
n may be reproduced or transm
i
t
ted
i
n
a
ny
f
o
rm or by any means, e
l
e
ctron
i
c
o
r
mechan
i
c
a
l
, i
n
c
l
u
d
i
n
g photocopy
i
n
g and record
i
n
g, or any
i
n
f
o
rmat
i
o
n storage or retr
i
e
v
a
l s
y
s
tem, or
otherw
i
s
e, w
i
t
hout the pr
i
o
r wr
i
t
ten consent of S
A
NYO
S
em
i
c
onductor Co.,
L
t
d.
A
n
y and a
l
l i
n
f
o
rmat
i
o
n desc
r
i
b
ed or conta
i
n
ed here
i
n
a
r
e
s
ub
j
e
ct to change w
i
t
hout not
i
c
e due to
p
r
oduct/techno
l
o
gy
i
m
provement, etc. When des
i
g
n
i
n
g equ
i
p
ment, re
f
e
r to the “De
l
iv
e
r
y
S
pec
i
fi
c
at
i
o
n”
f
o
r the
S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. product that you
i
n
tend to use.
I
n
f
o
rmat
i
o
n
(
i
n
c
l
u
d
i
n
g c
i
r
c
u
i
t
d
i
a
grams and c
i
r
c
u
i
t
p
a
r
a
meters) here
i
n is f
o
r examp
l
e
o
n
l
y; it is
n
ot guaranteed
f
o
r vo
l
u
me product
i
o
n.
U
p
on us
i
n
g the techn
i
c
al
i
n
f
o
rmat
i
o
n or products descr
i
b
ed here
i
n
, ne
i
t
her warranty nor
l
i
c
ense sha
l
l
b
e
granted w
i
t
h regard to
i
n
te
l
l
e
ctual property r
i
g
hts or any other r
i
g
hts of S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. or any
th
i
rd
p
a
r
ty. S
A
NYO
S
em
i
c
onductor Co.,
L
t
d. sha
l
l
n
ot be
l
i
a
b
l
e f
o
r any c
l
a
i
m
o
r su
i
t
s w
i
t
h regard to a th
i
rd
pa
r
ty’s intellectual
property r
i
g
hts wh
i
c
h has resu
l
t
ed
f
r
o
m the use of the techn
i
c
al
i
n
f
o
rmat
i
o
n and products
ment
i
o
ned above.
T
h
i
s
c
ata
l
o
g prov
i
d
es
i
n
f
o
rmat
i
o
n as of June, 2010. Spec
i
fi
c
at
i
o
ns and
i
n
f
o
rmat
i
o
n here
i
n
a
r
e
s
ub
j
e
ct
to change w
i
t
hout not
i
c
e.
PS No. A1629-5/5
