onsemi-EFC4621R-TR
| Part # | onsemi-EFC4621R-TR |
Download  | onsemi-EFC4621R-TR |
Ordering number : ENA2180A
EFC4621R
Power MOSFET
24V, 9A, 18m
Ω
N-Channel Dual EFCP
Features
2.5V drive
Protection diode in
Common-drain type
2KV ESD HBM
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings
at Ta = 25
C
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Symbol
Conditions
Ratings
Unit
V
V
SSS
24
V
GSS
12
V
I
I
9
60
A
S
PW
10
s, duty cycle
1%
When mounted on ceramic substrate (5000mm
2
0.8mm)
A
SP
P
T
1.6
W
C
C
Channel Temperature
Storage Temperature
Tch
150
Tstg
– 55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
Shipping
Device
Package
note
Pb-Free
and
Halogen-Free
5000
pcs. / reel
EFC4621R-TR
EFCP
1.81
EFC4621R-TR
4
3
Packing Type: TR
Marking
TR
FW
LOT No.
1
2
Electrical Connection
4
0.65
Rg
3
1: Source1
2: Gate1
Rg
3: Gate2
2
4: Source2
0.3
EFCP1818-4CE-022
Rg=200
1
Semiconductor Components Industries, LLC, 2014
January, 2014
12314HK/51513TKIM TC-00002912
No.A2180-1/9
EFC4621R
Electrical Characteristics
at Ta
25
C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
24
max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Cutoff Voltage
V(BR)
SSS
I =1mA,
V =0V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
V
A
A
V
S
GS
I
V
SS
=20V, V
=0V
1
SSS
GSS
GS
I
V
V
V
=±8V, V
=0V
SS
1
GS
V
(off)
GS
=10V, I
=1mA
0.5
1.3
SS
S
Forward Transfer Admittance
| yfs |
=10V, I
=3A
7.3
15.5
16
S
SS
S
R
R
R
R
R
(on)1
SS
(on)2
SS
(on)3
SS
(on)4
SS
(on)5
SS
I =3A,
V =4.5V
GS
10.8
11.1
11.5
12.5
14.9
18
19
m
m
m
m
m
ns
S
I =3A,
V =4.0V
GS
S
Static Source to Source On-State
Resistance
I =3A,
V =3.7V
GS
16.5
18
20
S
I =3A,
V =3.1V
GS
23.5
30
S
I =3A,
V =2.5V
GS
23
S
Turn-ON Delay Time
Rise Time
t (on)
340
600
26000
28000
29
d
t
ns
r
V
SS
=10V, V
=4.5V, I
=3A Test
Circuit 7
GS
S
Turn-OFF Delay Time
Fall Time
t (off)
ns
d
t
ns
f
Total Gate Charge
Forward Source to Source Voltage
Qg
V
SS
=10V, V
=4.5V, I
=9A Test
Circuit 8
GS
nC
V
S
V
I =3A,
V =0V
S GS
Test Circuit 6
0.77
1.2
F(S-S)
No.A2180-2/9
EFC4621R
Test circuits are example of measuring FET1 side
Test Circuit 2
Test Circuit 1
I
I
GSS
SSS
S2
S2
G2
G1
G2
A
V
G1
SS
A
V
GS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 3
Test Circuit 4
fs
y
V
(off)
GS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
V
SS
V
G1
SS
V
GS
V
GS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
S1
Test Circuit 6
Test Circuit 5
(on)
V
F(S-S)
R
SS
S2
S2
4.5V
IF
IS
G2
G1
G2
V
V
G1
VGS=0V
V
GS
When FET1 is
measured,+4.5V is added to
S1
S1
V
GS
of FET2.
Test Circuit 8
Qg
Test Circuit 7
t (on),
t , t
(off), t
f
d
r d
S2
S2
RL
A
G2
G1
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
I
=1mA
G
V
RL
R
R
V
SS
S1
S1
50
V
SS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
PG
No.A2180-3/9
EFC4621R
I
S
— V
I
–
–
V
S GS
SS
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
9
8
7
6
5
4
3
2
V
=10V
SS
1
0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
Source to Source
V
o
ltage, V
— V
Gate to Source
V
o
ltage, V
–
– V
GS
SS
R
SS
(on)
–
– V
R
(on)
–
– Ta
SS
GS
100
90
80
70
60
50
40
30
20
35
30
25
20
15
0
Ta=25
°
C
I =3A
S
10
0
0
2
4
6
8
10
–
–
60
–
–
40
–
–
20
0
20
40
60
80
100 120 140 160
Gate to Source
V
o
ltage, V
GS
— V
Ambient Temperature, Ta
–
–
°
C
|
y
fs
|
–
– I
I
S
— V
S
F(S-S)
10
7
5
10
7
5
V
=10V
V
=0V
GS
SS
3
2
3
2
1.0
7
5
1.0
7
5
3
2
3
2
0.1
7
5
0.1
7
5
3
2
3
2
0.01
0.001
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
0
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1.0
Source Current, I
–
– A
Forward Source to Source
V
o
ltage, V
— V
S
F(S-S)
A S O
V
GS
—
Q
g
100
4.5
4.0
3.5
7
V
I =6A
S
=10V
SS
5
3
2
I
=60A(PW
≤
10
μ
s)
SP
I =9A
S
10
7
5
3.0
2.5
2.0
1.5
1.0
3
2
1.0
7
5
3
2
Operation in this area
is limited by R
(on).
SS
0.1
7
5
3
2
Ta=25
°
C
0.5
0
Single pulse
When mounted on ceramic substrate (5000mm
2
×
0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
2 3
0
5
10
15
20
20
30
0.1
1.0
Source
V
o
ltage to Source
V
o
ltage, V
SS
— V
Total Gate Charge, Qg
–
–
n
C
No.A2180-4/9
EFC4621R
P
— Ta
T
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
When mounted on ceramic substrate
(5000mm
2
×
0.8mm)
0
20
40
60
80
100
120
140
Ambient Temperature, Ta
–
–
°
C
No.A2180-5/9
EFC4621R
Taping Specification
EFC4621R-TR
No.A2180-6/9
EFC4621R
No.A2180-7/9
EFC4621R
Outline Drawing
EFC4621R-TR
Land Pattern Example
Mass (g)
Unit
Unit: mm
0.0017
mm
* For reference
No.A2180-8/9
EFC4621R
Note on usage : Since the EFC4621R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
warranty, representation or guarantee regarding the suitabilit
y
o
f its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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PS No.A2180-9/9
