onsemi-EFC4626R-TR

Ordering number : ENA2292A  

EFC4626R  

N-Channel Power MOSFET  

24V, 5A, 46.2m

Ω

, Dual EFCP  

Features  



2.5V drive  



Protection diode in  



Common-drain type  



2KV ESD HBM  



Halogen free compliance  

Applications  



Lithium-ion battery charging and discharging switch  

Specifications  

Absolute Maximum Ratings

at Ta = 25



C  

Parameter  

Source to Source Voltage  

Gate to Source Voltage  

Source Current (DC)  

Source Current (Pulse)  

Total Dissipation  

Symbol  

Conditions  

Value  

Unit  

V

V

24  



10  

5

SSS  

V

I

V

GSS  

A

S

I

PW



10



s, duty cycle



1%  

When mounted on ceramic substrate (5000mm

2



0.8mm)  

60  

A

SP  

P

1.4  

150  

W



C  



C  

T

Junction Temperature  

Storage Temperature  

T

j

Tstg  

– 55 to +150  

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  

damage may occur and reliability may be affected.  

Thermal Resistance Ratings  

Parameter  

Symbol  

Value  

Unit  

Junction to Ambient  

When mounted on ceramic substrate (5000mm

2



0.8mm)  

R

84  



C /W  



JA  

Electrical Characteristics

at Ta



25



C  

Value  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

24  

max  

Source to Source Breakdown Voltage  

Zero-Gate Voltage Source Current  

Gate to Source Leakage Current  

Gate Threshold Voltage  

V(BR)  

SSS  

I =1mA,

 

V =0V  

GS  

Test Circuit 1  

Test Circuit 1  

Test Circuit 2  

Test Circuit 3  

Test Circuit 4  

V



A  



A  

V

S

I

V

SS  

=20V, V

 

=0V  

GS  

1

SSS  

GSS  

I

V

V

V

=±8V, V

 

=0V  

SS  



1  

GS  

V

(th)  

GS  

=10V, I

 

=1mA  

0.5  

1.3  

SS  

S

Forward Transconductance  

g

=10V, I

 

=2A  

7

S

FS  

SS  

S

Continued on next page.  

ORDERING INFORMATION  

See detailed ordering and shipping information on page 2 of this data sheet.  

Semiconductor Components Industries, LLC, 2014  

April, 2014  

42814HK TC-00003108/21214TKIM

 

No.A2292-1/6  

EFC4626R  

Continued from preceding page.  

Value  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

29.2  

max  

46.2  

R

R

R

R

R

(on)1  

SS  

(on)2  

SS  

(on)3  

SS  

(on)4  

SS  

(on)5  

SS  

I =2A,

 

V =4.5V  

GS  

Test Circuit 5  

Test Circuit 5  

Test Circuit 5  

Test Circuit 5  

Test Circuit 5  

37.5  

39.5  

41.0  

45.5  

54.0  

20  

m

  

m

  

m

  

m

  

m

  

ns  

S

I =2A,

 

V =4.0V  

30.8  

32.0  

35.5  

42.6  

48.6  

50.5  

58.3  

72.4  

S

GS  

Static Source to Source On-State  

Resistance  

I =2A,

 

V =3.8V  

S

GS  

I =2A,

 

V =3.1V  

S

GS  

I =2A,

 

V =2.5V  

GS  

S

Turn-ON Delay Time  

Rise Time  

t (on)  

d

t

350  

ns  

r

V

SS  

=10V, V

 

=4.5V, I

 

=2A Test

 

Circuit 6  

GS  

S

Turn-OFF Delay Time  

Fall Time  

t (off)  

22000  

38400  

7.5  

ns  

d

t

ns  

f

Total Gate Charge  

Forward Source to Source Voltage  

Qg  

V

SS  

=10V, V

 

=4.5V, I

 

=5A Test

 

Circuit 7  

GS  

nC  

V

S

V

I =2A,

 

V =0V  

S GS  

Test Circuit 8  

0.81  

1.2  

F(S-S)  

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  

indicated by the Electrical Characteristics if operated under different conditions.  

Ordering & Package Information  

Shipping  

Device  

Package  

note  

Pb-Free  

and  

Halogen Free  

8,000  

pcs. / reel  

EFC4626R-TR  

EFCP  

Packing Type: TR  

Marking  

Electrical Connection  

B

TR  

LOT No.  

No.A2292-2/6  

EFC4626R  

Test circuits are example of measuring FET1 side  

Test Circuit 2  

Test Circuit 1  

I

I

GSS  

SSS  

S2  

S2  

G2  

G1  

G2  

A

V

G1  

SS  

A

V

GS  

S1  

S1  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

Test Circuit 3  

Test Circuit 4  

g

V (th)  

GS  

FS  

S2  

S2  

G2  

G1  

G2  

A

A

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

V

V

G1  

SS  

SS  

V

V

GS  

GS  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

S1  

S1  

Test Circuit 6  

Test Circuit 5  

(on)  

t (on),

 

t , t

 

(off), t  

f

d

r d  

R

SS  

S2  

S2  

RL  

IS  

G2  

G1  

G2  

V

V

G1  

V

SS  

V

GS  

S1  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

S1  

PG  

Test Circuit 8  

Test Circuit 7  

Qg  

V

F(S-S)  

S2  

S2  

I

A

S

G2  

G1  

G2  

G1  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

V

I

G

=1mA  

VGS=0V  

RL  

SS  

When FET1 is  

measured,+4.5V is added to  

S1  

S1  

V

PG  

V

GS

of FET2.  

When FET2 is measured, the position of FET1 and FET2 is switched.  

No.A2292-3/6  

EFC4626R  

No.A2292-4/6  

EFC4626R  

No.A2292-5/6  

EFC4626R  

Package Dimensions  

EFC4626R-TR  

EFCP1010-4DG-020  

unit : mm  

Recommended Soldering  

Footprint  

1: Source1  

2: Gate1  

3: Gate2  

4: Source2  

Note on usage : Since the EFC4626R is a MOSFET product, please avoid using this device in the vicinity  

of highly charged objects.  

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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitabilit

y

o

f its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

must be validated for each customer application by customer’s technical  

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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  

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PS No.A2292-6/6