onsemi-EFC4K105NUZTDG
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EFC4K105NUZ
Power MOSFET
for 1‐2 Cells Lithium‐ion
Battery Protection
22
V
,
3
.55 m
W
, 25 A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device
is suitable for applications such as power switches of portable
machines. Best suited for 1-2 cells lithium-ion battery applications.
V
SSS
R
MAX
I MAX
S
SS(ON)
22 V
3.55 m
W
@ 4.5 V
3.65 m
W
@ 3.8 V
5.3 m
W
@ 3.1 V
7.2 m
W
@ 2.5 V
25 A
Features
•
2.5 V Drive
•
Common-Drain Type
•
ESD Diode-Protected Gate
•
This device is Pb-Free, Halogen Free and RoHS Compliance
ELECTRICAL CONNECTION
Applications
6, 7, 8, 10
•
1-2 Cells Lithium-ion Battery Charging and Discharging Switch
1: Source1
2: Gate1
Specifications
9
2
3: Source1
4: Source1
5: Source1
6: Source2
7: Source2
8: Source2
9: Gate2
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C)
A
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Symbol
Value
22
Unit
V
V
SSS
GSS
V
12
V
10: Source2
I
S
25
A
1, 3, 4, 5
N-Channel
Source Current (Pulse)
PW
≤
10
m
s, duty cycle
≤
1%
I
SP
100
A
Junction
T
e
mperature
P
2.5
W
T
PIN ASSIGNMENT
T
150
°
C
j
Storage
T
e
mperature
T
−
55 to +150
°
C
stg
1
10
8
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4
5
6
7
9
2
WLCSP10
(3.40 x 1.96 x 0.10)
CASE 567PL
3
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
MARKING DIAGRAM
R
50
°
C/W
θ
JA
NZ
AYWZZ
2
1. Surface
mounted on ceramic substrate (5000 mm
×
0.8 mm).
NZ
A
Y
= Specific Device Code
= Assembly Location
=
Y
e
ar
W
ZZ
= Work Week
= Assembly Lot
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
August, 2018
−
Rev. 0
EFC4K105NUZ/D
EFC4K105NUZ
ELECTRICAL CHARACTERISTICS
(T =
25
°
C)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
V
Source to Source Breakdown Voltage
I =
1 mA, V
= 0 V
22
(BR)SSS
S
GS
I
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
V
= 17.6
V
, V
= 0 V
1
m
A
m
A
V
SSS
SS
GS
SS
GS
I
V
V
=
8
V
, V
= 0 V
1
GSS
SS
V
R
(th) Gate
Threshold Voltage
= 10 V, I
= 1 mA
0.4
1.8
1.9
2.0
2.2
1.3
3.55
3.65
5.3
7.2
GS
S
(on) Static
Source to Source On-State
Resistance
I =
5 A, V
= 4.5 V
S
2.7
2.8
3.3
4.0
13
m
W
m
W
m
W
m
W
m
s
SS
GS
I =
5 A, V
= 3.8 V
S
GS
I =
5 A, V
= 3.1 V
S
GS
I =
5 A, V
= 2.5 V
S
GS
t (on)
d
Turn-ON Delay Time
Rise Time
V
= 10
V
, V
=
3
.8
V
, I
= 5 A
SS GS S
Rg = 10 k
W
Switching
T
e
st Circuit
t
r
35
m
s
t (off)
Turn-OFF Delay Time
Fall Time
185
78
m
s
d
t
f
m
s
Qg
T
o
tal Gate Charge
Forward Source to Source Voltage
V
= 10
V
, V
=
3
.8
V
, I
= 5 A
43
nC
V
SS
GS
S
V
I =
3 A, V
= 0 V
S
0.75
1.2
F(S
−
S)
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
t (on),
t , t
(off), t
f
d
r
d
S2
R
L
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
R
g
V
SS
S1
Figure 1. Switching Test Circuit
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty
/ Packing)
EFC4K105NUZTDG
NZ
WLCSOP10, 3.40 x 1.96 x 0.10
(Pb-Free / Halogen Free)
5,000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
2
EFC4K105NUZ
TYPICAL CHARACTERISTICS
6
5
4
10
4.5 V
9
V
SS
= 6 V
T =
25
°
C
A
8
Single Pulse
7
V
= 2.5 V
GS
T =
75
°
C
A
6
5
4
3
3
2
25
°
C
3.1 V
3.8 V
−
25
°
C
2
1
0
1
0
0
0.005
0.01
0.015
0.02
0.025
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-to-Source Voltage, V
(V)
Gate-to-Source Voltage, V
(V)
GS
SS
Figure 2. On-Region Characteristics
Figure 3. Transfer Characteristics
5.0
7.0
6.0
5.0
V
I
= 2.5
V
,
= 5 A
Single Pulse
I
= 5 A
GS
S
4.5
4.0
3.5
3.0
2.5
Single Pulse
S
V
I
= 3.1
V
,
= 5 A
GS
T =
75
°
C
A
S
4.0
25
°
C
−
25
°
C
3.0
2.0
1.0
V
GS
= 4.5
V
,
2.0
1.5
1.0
I
S
= 5 A
V
GS
= 3.8
V
,
I
S
= 5 A
1
2
3
4
5
6
7
8
−
60
−
40
−
20
0
20
40 60
80 100
120 140 160
Gate-to-Source Voltage, V
(V)
Ambient Temperature, T
(
5
C)
GS
A
Figure 4. On-Resistance vs. Gate-to-Source
Voltage
Figure 5. On-Resistance vs. Temperature
10
1000
V
= 0 V
GS
V
V
= 10
V
,
= 3.8 V
SS
Single Pulse
GS
td(off)
I
S
= 5 A
1
100
10
1
T =
75
°
C
A
25
°
C
tf
0.1
tr
−
25
°
C
td(on)
0.01
1
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Gate Resistance, R
(k
W
)
Forward Source-to-Source Voltage, V
(V)
g
F(S-S)
Figure 6. Forward Source-to-Source Voltage
vs. Current
Figure 7. Switching Time vs. Gate Resistance
3
EFC4K105NUZ
TYPICAL CHARACTERISTICS
4.5
4.0
I
= 100 A (PW
≤
10
m
s)
SP
100
V
I
= 10 V
= 5 A
SS
I
S
= 25 A
S
10
m
s
3.5
3.0
10
1
100
m
s
DC Operation
1 ms
2.5
2.0
10 ms
Operation in this area
is limited by R
SS(on)
100 ms
1.5
1.0
T
= 25
°
C
A
0.1
0.01
Single Pulse
When mounted on ceramic substrate
(5000 mm
×
0.8 mm)
0.5
0.0
2
0
10
20
30
40
50
60
0.01
0.1
1
10
Total Gate Charge, Q
(nC)
Source-to-Source Voltage, V
(V)
SS
g
Figure 8. Gate-to-Source Voltage vs. Total Charge
Figure 9. Safe Operating Area
3.0
Surface mounted on
ceramic substrate
(5000 mm
×
0.8 mm)
2.5
2.0
1.5
2
1.0
0.5
0.0
0
20
40
60
80
100
120
140
160
Ambient Temperature, T
(
5
C)
A
Figure 10. Total Dissipation vs. Temperature
100
Duty Cycle
−
50%
20%
10
10%
5%
2%
1
1%
Single Pulse
Surface mounted on ceramic substrate
(5000 mm
×
0.8 mm)
2
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Time, P
(s)
T
Figure 11. Thermal Response
Note on Usage:
Since the EFC4K105NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP10 3.40×1.96×0.10
CASE 567PL
ISSUE C
DATE 14 MAR 2018
SCALE 4:1
NOTES:
D
A
B
E
1. DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
MILLIMETERS
DIM
A
b
b1
b2
b3
b4
D
E
e
e1
e2
e3
MIN
0.08
0.22
0.50
1.78
0.32
0.32
NOM
0.10
0.25
0.53
1.81
MAX
0.12
0.28
0.56
1.84
0.38
0.38
PIN A1
REFERENCE
0.35
0.35
2X
2X
0.03
0.03
C
C
3.40 BSC
1.96 BSC
0.64 BSC
0.60 BSC
0.525 BSC
0.525 BSC
TOP VIEW
A
0.03
0.03
C
C
SEATING
C
SIDE VIEW
e2 e1
PLANE
4X
b2
M
0.05
C A B
e3
1
4
5
6
7
10
2X
b
M
0.05
C A B
9
2
e
3
8
4X
b1
4X
b3
M
0.05
C A
B
M
0.05
C A B
RECOMMENDED
SOLDERING FOOTPRINT*
4X
b4
0.05
M
0.525 PITCH
0.60 PITCH
C A B
BOTTOM VIEW
0.575 PITCH
PACKAGE
OUTLINE
3
8
0.64 PITCH
GENERIC
MARKING DIAGRAM*
2X
0.32
2X
0.25
2
0.25
4X
0.53
9
XX
AYWZZ
G
1
10
R0.175
0.56 PITCH
4X
0.45
A
Y
W
= Assembly Location
=
Y
e
ar
= Work Week
4X
0.35
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ZZ =
Assembly Lot
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14524G
WLCSP10 3.40×1.96×0.10
PAGE 1 OF 1
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