onsemi-EFC6605R-TR

Ordering number : ENA2302  

EFC6605R  

N-Channel Power MOSFET  

20

V

,

1

0A, 13.3m

Ω

, Dual EFCP  

Features  

•

2.5V drive  

•

Protection diode in  

•

Halogen free compliance  

•

Common-drain type  

•

2KV ESD HBM  

Applications  

•

Lithium-ion battery charging and discharging switch  

Specifications  

Absolute Maximum Ratings

at Ta = 25

°

C  

Parameter  

Source to Source Voltage  

Gate to Source Voltage  

Source Current (DC)  

Source Current (Pulse)  

Total Dissipation  

Symbol  

Conditions  

Value  

Unit  

V

V

20  

SSS  

V

I

10  

V

GSS  

10  

60  

A

S

I

PW

≤

10

μ

s, duty cycle

≤

1%  

When mounted on ceramic substrate (5000mm

2

×

0.8mm)  

A

SP  

P

1.6  

W

°

C  

°

C  

T

Junction Temperature  

Storage Temperature  

T

150  

j

Tstg  

– 55 to +150  

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  

damage may occur and reliability may be affected.  

Thermal Resistance Ratings  

Parameter  

Symbol  

Value  

78.1  

Unit  

Junction to Ambient  

When mounted on ceramic substrate (5000mm

2  

×

0.8mm)  

R

°

C /W  

θ

JA  

Electrical Characteristics

at Ta

=

25

°

C  

Value  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

20  

max  

Source to Source Breakdown Voltage  

Zero-Gate Voltage Source Current  

Gate to Source Leakage Current  

Gate Threshold Voltage  

V(BR)  

SSS  

I =1mA,

 

V =0V  

GS  

Test Circuit 1  

Test Circuit 1  

Test Circuit 2  

Test Circuit 3  

Test Circuit 4  

Test Circuit 5  

Test Circuit 5  

Test Circuit 5  

Test Circuit 5  

Test Circuit 5  

V

S

I

V

SS  

=20V, V

 

=0V  

GS  

1

μ

A  

μ

A  

V

SSS  

GSS  

I

V

V

V

=±8V, V

 

=0V  

SS  

1.0  

1.3  

GS  

V

(th)  

GS  

10V, I

 

=1mA  

0.5  

SS  

S

Forward Transconductance  

g

=10V, I

 

=3A  

11.4  

11.1  

11.4  

11.6  

12.5  

13.9  

S

FS  

SS  

S

RSS(on)1  

RSS(on)2  

RSS(on)3  

RSS(on)4  

RSS(on)5  

IS=3A, VGS=4.5V  

IS=3A, VGS=4.0V  

IS=3A, VGS=3.8V  

IS=3A, VGS=3.1V  

IS=3A, VGS=2.5V  

8.8  

9.1  

13.3  

13.7  

13.9  

15.6  

17.4  

m

Ω  

m

Ω  

m

Ω  

m

Ω  

m

Ω  

Static Source to Source On-State  

Resistance  

9.3  

10.0  

11.1  

Continued on next page.  

ORDERING INFORMATION  

See detailed ordering and shipping information on page 2 of this data sheet.  

Semiconductor Components Industries, LLC, 2014  

March, 2014  

32714 TKIM TC-00003101

 

No.A2302-1/6  

EFC6605R  

Continued from preceding page.  

Value  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

max  

Turn-ON Delay Time  

Rise Time  

t (on)  

154  

ns  

ns  

ns  

ns  

nC  

V

d

t

678  

r

V

V

=10V, V

 

=4.5V, I

 

=3A Test

 

Circuit 6  

GS  

SS  

S

Turn-OFF Delay Time  

Fall Time  

t (off)  

d

44400  

60800  

19.8  

0.75  

t

f

Total Gate Charge  

Forward Source to Source Voltage  

Qg  

=10V, V

 

=4.5V, I

 

=10A Test Circuit 7  

GS  

SS  

S

V

I =3A,

 

V =0V  

S GS  

Test Circuit 8  

1.2  

F(S-S)  

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  

indicated by the Electrical Characteristics if operated under different conditions.  

Ordering & Package Information  

Shipping  

Device  

Package  

note  

Pb-Free  

and  

Halogen Free  

5,000  

pcs. / reel  

EFC6605R-TR  

EFCP  

Packing Type: TR  

Marking  

Electrical Connection  

4, 6  

ME  

TR  

Rg  

5

LOT No.  

Rg  

2

Rg=200

Ω

 

1, 3  

No.A2302-2/6  

EFC6605R  

Test circuits are example of measuring FET1 side  

Test Circuit 2  

Test Circuit 1  

I

I

GSS  

SSS  

S2  

S2  

G2  

G2  

G1  

A

G1  

V

SS  

A

V

GS  

S1  

S1  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

Test Circuit 3  

Test Circuit 4  

g

V

(th)  

GS  

FS  

S2  

S2  

G2  

G1  

G2  

A

A

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

V

V

G1  

SS  

SS  

V

V

GS  

GS  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

S1  

S1  

Test Circuit 6  

Test Circuit 5  

(on)  

t (on),

 

t , t

 

(off), t  

f

d

r d  

R

SS  

S2  

S2  

RL  

IS  

G2  

G1  

G2  

V

V

G1  

V

SS  

V

GS  

S1  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

S1  

PG  

Test Circuit 8  

Test Circuit 7  

Qg  

V

F(S-S)  

S2  

S2  

I

A

S

G2  

G1  

G2  

G1  

When FET1 is measured,  

Gate and Source of FET2  

are short-circuited.  

V

I

G

=1mA  

VGS=0V  

RL  

When FET1 is  

measured,+4.5V is added to  

S1  

S1  

V

SS  

PG  

V

GS

of FET2.  

When FET2 is measured, the position of FET1 and FET2 is switched.  

No.A2302-3/6  

EFC6605R  

Source Current, I

 

–

– A  

S

No.A2302-4/6  

EFC6605R  

No.A2302-5/6  

EFC6605R  

Package Dimensions  

EFC6605R-TR  

EFCP1915-6CE-020  

unit : mm  

1: Source1  

2: Gate1  

Recommended Soldering  

Footprint  

3: Source1  

4: Source2  

5: Gate2  

6: Source2  

Note on usage : Since the EFC6605R is a MOSFET product, please avoid using this device in the vicinity  

of highly charged objects.  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  

SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as  

components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  

the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any  

such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  

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PS No.A2302-6/6