onsemi-EMD5DXV6T5G
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DATA SHEET
(3)
(2)
(1)
Dual Bias Resistor
R
Transistors
1
R
2
Q
1
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
Q
2
R
2
R
1
(4)
(5)
4
(6)
EMD5DXV6T5G
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base
−
emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD5DXV6 series, two
complementary BRT devices are housed in the SOT
−
563 package
which is ideal for low power surface mount applications where board
space is at a premium.
5
6
3
2
1
SOT
−
563
CASE 463A
MARKING DIAGRAM
U5 M
G
Features
G
1
•
Simplifies Circuit Design
•
Reduces Board Space
U5 =
Specific Device Code
M
G
= Month Code
= Pb
−
Free Package
•
Reduces Component Count
•
Available in 8 mm, 7 inch Tape and Reel
•
Lead Free Solder Plating
(Note: Microdot may be in either location)
•
These Devices are Pb
−
Free and are RoHS Compliant
ORDERING INFORMATION
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted, common for Q
A
1
†
and Q
,
−
minus sign for Q
(PNP) omitted)
Device
Package
Shipping
2
1
EMD5DXV6T5G
SOT
−
563
(Pb
−
Free)
8000 /
T
a
pe &
Reel
Rating
Symbol
Value
50
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
CBO
V
CEO
Vdc
Vdc
EMD5DXV6T1G
SOT
−
563
(Pb
−
Free)
4000 /
T
a
pe &
Reel
50
I
C
100
mAdc
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
T
o
tal Device Dissipation
T =
25
°
C
P
357
2.9
mW
A
D
Derate above 25
°
C
mW/
°
C
°
C/W
Thermal Resistance
Junction-to-Ambient
R
350
q
JA
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
T
o
tal Device Dissipation
T =
25
°
C
P
500
4.0
mW
A
D
Derate above 25
°
C
mW/
°
C
°
C/W
°
C
Thermal Resistance
Junction-to-Ambient
Junction and Storage
T
e
mperature
R
250
q
JA
T , T
J
−
55 to
+150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
4 @ Minimum Pad
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2022
−
Rev. 2
EMD5DXV6/D
EMD5DXV6T5G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50
V
, I
=
0
)
I
I
−
−
−
−
−
−
100
500
1.0
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50
V
, I
=
0
)
CB
B
CEO
Emitter-Base Cutoff Current (V
= 6.0, I
= 5.0 mA)
I
EBO
EB
C
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
= 10
m
A, I
= 0)
V
V
50
50
20
−
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (I
= 2.0 mA, I
= 0)
C
B
(BR)CEO
DC Current Gain (V
= 10
V
, I
=
5
.0 mA)
h
FE
35
−
−
CE
C
Collector
−
Emitter Saturation Voltage (I
= 10 mA, I
= 0.3 mA)
V
0.25
0.2
−
Vdc
Vdc
Vdc
k
W
C
B
CE(SAT)
Output Voltage (on) (V
= 5.0 V, V
= 2.5 V, R
= 1.0 k
W
)
V
OL
−
−
CC
B
L
Output Voltage (off) (V
= 5.0 V, V
= 0.5 V, R
= 1.0 k
W
)
V
OH
4.9
3.3
0.38
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R1/R2
4.7
0.47
6.1
0.56
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50
V
, I
=
0
)
I
I
−
−
−
−
−
−
100
500
0.1
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50
V
, I
=
0
)
CB
B
CEO
Emitter-Base Cutoff Current (V
= 6.0, I
= 5.0 mA)
I
EBO
EB
C
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
= 10
m
A, I
= 0)
V
V
50
50
80
−
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (I
= 2.0 mA, I
= 0)
C
B
(BR)CEO
DC Current Gain (V
= 10
V
, I
=
5
.0 mA)
h
FE
140
−
−
CE
C
Collector
−
Emitter Saturation Voltage (I
= 10 mA, I
= 0.3 mA)
V
0.25
0.2
−
Vdc
Vdc
Vdc
k
W
C
B
CE(SAT)
Output Voltage (on) (V
= 5.0 V, V
= 2.5 V, R
= 1.0 k
W
)
V
OL
−
−
CC
B
L
Output Voltage (off) (V
= 5.0 V, V
= 0.5 V, R
= 1.0 k
W
)
V
OH
4.9
33
0.8
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R1/R2
47
1.0
61
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
250
200
150
100
R
= 833
°
C/W
q
JA
50
0
-ꢀ50
0
50
100
150
T ,
AMBIENT TEMPERATURE (
°
C)
A
Figure 1. Derating Curve
2
EMD5DXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6 PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C B
T ꢁ=ꢁ75
°
C
A
25
°
C
100
-25
°
C
T ꢁ=ꢁ75
°
C
A
25
°
C
0.1
-25
°
C
10
1
0.01
1
10
100
1000
0
10
20
30
40
50
60
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
12
100
10
f = 1 MHz
I =
0 mA
10
8
E
75
°
C
T =
25
°
C
A
6
1
0.1
V =
5 V
O
4
SERIES 1
T ꢁ=ꢁ-25
°
C
A
2
0
25
°
C
0.01
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
3
EMD5DXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6 NPN TRANSISTOR
10
1
1000
V
= 10 V
CE
I /I
= 10
C B
T ꢁ=ꢁ75
°
C
A
25
°
C
-25
°
C
25
°
C
100
T ꢁ=ꢁ-25
°
C
A
75
°
C
0.1
0.01
10
0
20
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. V
CE(sat)
versus I
C
Figure 7. DC Current Gain
1
100
10
1
25
°
C
f = 1 MHz
I =
0 mA
75
°
C
E
T ꢁ=ꢁ-25
°
C
A
0.8
T =
25
°
C
A
0.6
0.4
0.1
0.01
0.2
0
V =
5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 8. Output Capacitance
Figure 9. Output Current versus Input Voltage
100
V =
0.2 V
O
T ꢁ=ꢁ-25
°
C
A
25
°
C
75
°
C
10
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 10. Input Voltage versus Output Current
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SOT
−
563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX M
G
1
XX =
Specific Device Code
M
= Month Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
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onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
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onsemi
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under any of its intellectual property rights nor the rights of others.
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