onsemi-EMF18XV6T5G
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DATA SHEET
(3)
(2)
(1)
Q
Dual
T
r
ansistor –
Power Management
R
1
Q
1
2
NPN/PNP Dual (Complementary)
R
2
EMF18XV6T5
(4)
(5)
(6)
Features
•
Low V
,
t
0.5 V
CE(S
A
T
)
•
These are Pb
−
Free Devices
6
1
MAXIMUM RATINGS
Q1
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
SOT
−
563
CASE 463A
PLASTIC
V
CBO
V
CEO
50
Vdc
I
C
100
mAdc
MARKING DIAGRAM
Q2
Rating
Symbol
Value
−
60
Unit
V
Collecto
r
−
Emitter Voltage
Collecto
r
−
Base Voltage
V
CEO
V
CBO
V
EBO
−
50
V
UV M
G
Emitte
r
−
Base Voltage
−
6.0
−
100
V
G
1
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
I
C
mAdc
UV =
Specific Device Code
Characteristic
(One Junction Heated)
M
= Date Code
Symbol
Max
Unit
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
T
o
tal Device Dissipation
T =
25
°
C
P
D
357
2.9
mW
A
Derate above 25
°
C
mW/
°
C
°
C/W
ORDERING INFORMATION
†
Thermal Resistance,
Junction-to-Ambient
R
350
q
JA
Device
Package
Shipping
EMF18XV6T5G
SOT
−
563
(Pb
−
Free)
8000/
T
a
pe & Reel
4000/
T
a
pe & Reel
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
EMF18XV6T1G
SOT
−
563
(Pb
−
Free)
T
o
tal Device Dissipation
T =
25
°
C
P
D
500
4.0
mW
A
Derate above 25
°
C
mW/
°
C
°
C/W
°
C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance,
Junction-to-Ambient
R
250
q
JA
Junction and Storage
T
e
mperature Range
T , T
−
55 to +150
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR
−
4 @ Minimum Pad.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
April, 2022
−
Rev. 3
EMF18XV6/D
EMF18XV6T5
ELECTRICAL CHARACTERISTICS
(T =
25
°
C) (Note 2)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Q1: NPN
Collector-Base Cutoff Current (V
= 50
V
, I
=
0
)
I
I
−
−
−
−
100
500
0.1
−
nAdc
nAdc
mAdc
Vdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50
V
, I
=
0
)
CE
B
CEO
Emitter-Base Cutoff Current (V
= 6.0
V
, I
=
0
)
I
EBO
−
−
EB
C
Collector-Base Breakdown Voltage (I
= 10
m
A, I
= 0)
V
V
50
50
80
−
−
C
E
(BR)CBO
(BR)CEO
−
−
Vdc
C
B
DC Current Gain (V
= 10
V
, I
=
5
.0 mA)
h
FE
140
−
−
CE
C
Collector-Emitter Saturation Voltage (I
= 10 mA, I
= 0.3 mA)
V
CE(sat)
0.25
0.2
−
Vdc
Vdc
Vdc
k
W
C
B
Output Voltage (on) (V
= 5.0 V, V
= 3.5 V, R
= 1.0 k
W
)
V
−
−
CC
B
L
OL
Output Voltage (off) (V
= 5.0 V, V
= 0.5 V, R
= 1.0 k
W
)
V
4.9
32.9
0.8
−
CC
B
L
OH
Input Resistor
Resistor Ratio
Q2: PNP
R1
47
1.0
61.1
1.2
R1/R2
Collector
−
Base Breakdown Voltage (I
=
−
50
m
Adc, I
= 0)
V
V
−
60
−
50
−
6.0
−
−
−
−
−
−
−
−
−
Vdc
Vdc
Vdc
nA
C
E
(BR)CBO
Collector
−
Emitter Breakdown Voltage (I
=
−
1.0 mAdc, I
= 0)
C
B
(BR)CEO
Emitter
−
Base Breakdown Voltage (I
=
−
50
m
Adc, I
= 0)
V
(BR)EBO
−
E
E
Collector
−
Base Cutoff Current (V
=
−
30 Vdc, I
= 0)
I
CBO
−
0.5
−
0.5
−
0.5
CB
E
Emitter
−
Base Cutoff Current (V
=
−
5.0 Vdc, I
= 0)
I
EBO
−
m
A
EB
B
V
−
Vdc
CE(sat)
(I =
−
50 mAdc, I
=
−
5.0 mAdc)
C
B
h
120
−
−
560
−
−
CE
C
FE
Transition Frequency (V
=
−
12 Vdc, I
=
−
2.0 mAdc, f = 30 MHz)
f
140
3.5
MHz
pF
CE
C
T
Output Capacitance (V
=
−
12 Vdc, I
= 0 Adc, f = 1.0 MHz)
C
−
−
CB
E
OB
3. Device
mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
4. Pulse
T
e
st: Pulse Width
≤
300
m
s, D.C.
≤
2%.
2
EMF18XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN
10
1
1000
V
= 10 V
CE
I /I
= 10
C B
T ꢀ=ꢀ75
°
C
A
25
°
C
-25
°
C
25
°
C
100
T ꢀ=ꢀ-25
°
C
A
75
°
C
0.1
0.01
10
0
20
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. V
CE(sat)
versus I
C
Figure 2. DC Current Gain
1
100
10
1
25
°
C
f = 1 MHz
I =
0 V
75
°
C
E
T ꢀ=ꢀ-25
°
C
A
0.8
T =
25
°
C
A
0.6
0.4
0.1
0.01
0.2
0
V =
5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 3. Output Capacitance
Figure 4. Output Current versus Input Voltage
100
V =
0.2 V
O
T ꢀ=ꢀ-25
°
C
A
25
°
C
75
°
C
10
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Input Voltage versus Output Current
3
EMF18XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS
−
Q2, PNP
1000
V
CE
= 10 V
T =
25
°
C
A
T =
25
°
C
A
120
90
T =
75
°
C
A
T =
–
2
5
°
C
A
300
m
A
250
100
200
60
150
100
30
0
I =
50
m
A
B
10
0.1
0
3
6
9
12
15
1
10
100
V
CE
, COLLECTOR VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. I
C
−
V
CE
Figure 7. DC Current Gain
2
900
T =
25
°
C
A
800
700
600
500
400
300
1.5
1
T =
25
°
C
CE
0.5
0
A
200
100
0
V
= 5 V
0.01
0.1
1
10
100
0.2 0.5
1
5
10 20
40 60 80
100 150
200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 8. Collector Saturation Region
Figure 9. On Voltage
13
14
12
11
10
12
10
8
9
8
7
6
4
2
0
6
0
1
2
3
4
0
10
20
(V)
30
40
V
EB
(V)
V
CB
Figure 10. Capacitance
Figure 11. Capacitance
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SOT
−
563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX M
G
1
XX =
Specific Device Code
M
= Month Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT
−
563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
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and applications using
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
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onsemi
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under any of its intellectual property rights nor the rights of others.
onsemi
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:
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