onsemi-EMI7403FCTBG

Part #onsemi-EMI7403FCTBG
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onsemi-EMI7403FCTBG
EMI7403  
EMI Filter with ESD  
Protection for MicroSD Card  
Applications  
Product Description  
MARKING  
The EMI7403 is a combination EMI filter with integrated TVS  
diodes for use on Multimedia Card interfaces. This state
−
of
−
the
−
art  
device utilizes solid
−
state, silicon
−
avalanche technology for superior  
clamping performance and DC electrical characteristics. The  
EMI7403 has been optimized for protection of MicroSD interfaces in  
smart phones and other portable electronics.  
DIAGRAM  
74  
YW  
G
WLCSP15  
CASE 567FX  
Features  
•
Provides ESD Protection to IEC61000
−
4
−
2:  
15 kV Contact Discharge  
74  
Y
W
G
= Specific Device Code  
=
Y
e
ar  
= Work Week  
•
Protection and Termination for 6 Lines + V  
CC  
= Pb
−
Free Package  
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS  
Compliant  
ORDERING INFORMATION  
†
Applications  
Device  
Package  
Shipping  
•
MicroSD Interfaces  
•
MMC Interfaces  
EMI7403FCTBG WLCSP15  
5000 /  
T
a
pe & Reel  
(Pb
−
Free)  
•
Feature Phones, Smart Phones  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specifications  
Brochure, BRD8011/D.  
PACKAGE / PINOUT DIAGRAMS  
A1 Corner  
Indicator  
1
2
3
4
4
3
2
1
A
B
C
D
A
B
C
D
74  
YW  
T
o
p View  
(Bumps Down View)  
Bottom View  
(Bumps Up View)  
©
Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
July, 2014
−
Rev. 0  
EMI5106/D  

EMI7403  
Figure 1. Electrical Schematic  
Table 1. PIN DESCRIPTIONS  
Pin  
A1  
A2  
A3  
A4  
Description  
data0 Internal  
Pin  
B1  
B2  
B3  
B4  
Description  
Pin  
Description  
Pin  
D1  
D2  
D3  
D4  
Description  
data3 Internal  
clk Internal  
C1  
cmd Internal  
data1 Internal  
V
CC  
External  
data2 Internal  
SDdata1 External  
SDdata0 External  
GND  
SDclk External  
C3  
C4  
GND  
SDdata2 External  
SDdata3 External  
SDcmd External  
2

EMI7403  
ELECTRICAL SPECIFICATIONS AND CONDITIONS  
Table 2. PARAMETERS AND OPERATING CONDITIONS  
Parameter  
Rating  
Unit  
°
C  
Storage
T
e
mperature Range  
Operating
T
e
mperature Range  
−
55 to +150  
−
40 to +85  
°
C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Symbol  
Parameter  
Reverse Working Voltage  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
V
RWM  
3.3  
V
Breakdown Voltage  
6.0  
9.0  
0.5  
V
BR  
T
I
Channel Leakage Current  
Channel Resistance (R1 to R6)  
Cut
–
off Frequency  
V
IN  
= 3.3 V  
0.1  
40  
m
A  
W
LEAK  
R
CH  
f
50
W
Source and Load  
300  
MHz  
3dB  
T
e
rmination  
F
Stop Band Attenuation  
@ 700 MHz  
@ 900 MHz  
20  
35  
dB  
kV  
atten  
V
In
–
system ESD Withstand Voltage  
a) Contact discharge per IEC 61000
–
4
–
2 standard, Level 4  
(External Pins)  
b) Contact discharge per IEC 61000
–
4
–
2 standard, Level 1  
(Internal Pins)  
ESD  
15  
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Standard
 
IEC61000
−
4
−
2 with C  
= 150 p
F
, R  
= 330, GND grounded.  
Discharge  
Discharge  
2. These
 
measurements performed with no external capacitor
.  
3. TVS
 
devices are normally selected according to the working peak reverse voltage (V  
or continuous peak operating voltage level.  
), which should be equal to or greater than the DC  
RWM  
4. V
 
is measured at pulse test current I
 
.  
BR  
T
3
 

EMI7403  
RF CHARACTERISTICS  
m1  
0
−
5  
−
10  
−
15  
−
20  
−
25  
−
30  
−
35  
−
40  
−
45  
−
50  
1E+06  
1E+07  
1E+08  
1E+09  
1E+10  
FREQUENCY (Hz)  
Figure 2. S21 Attenuation Simulation  
Data Rate  
(Mbyte/s)  
Interface  
Fundamental Frequency (MHz)  
EMI7403 Insertion Loss (dB)  
m1 = 3.27  
DDR50/SDR50  
50  
100 (m1)  
4

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WLCSP15, 1.56×1.56  
CASE 567FX  
ISSUE O  
SCALE 4:1  
DATE 07 JUN 2012  
D
A
B
E
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER  
ASME Y14.5M, 1994.  
PIN A1  
REFERENCE  
2. CONTROLLING
 
DIMENSION: MILLIMETERS.  
3. COPLANARITY
 
APPLIES TO SPHERICAL  
CROWNS OF SOLDER BALLS.  
MILLIMETERS  
DIM  
A
A1  
A2  
b
D
E
MIN  
0.47  
0.185  
0.305 REF  
0.24  
1.56 BSC  
1.56 BSC  
0.40 BSC  
MAX  
0.53  
0.205  
2X  
0.10  
0.10  
C
0.29  
2X  
C
TOP VIEW  
SIDE VIEW  
e
A2  
A
0.10  
C
GENERIC  
MARKING DIAGRAM*  
0.05  
C
XX  
YW  
G
SEATING  
PLANE  
NOTE 3  
C
A1  
e/2  
XX =
 
Specific Device Code  
15X  
b
Y
W
G
=
Y
e
ar  
= Work Week  
= Pb
−
Free Package  
e
e
0.05  
0.03  
C
C
A B  
D
C
B
A
e/2  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb
−
Free indicator, “G” or microdot “
G
”,  
may or may not be present.  
1
2
3
4
BOTTOM VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
0.40  
PITCH  
A1  
PACKAGE  
OUTLINE  
15X  
0.23  
0.40  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb
−
Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON81359E  
WLCSP15, 1.56X1.56  
PAGE 1 OF 1  
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Semiconductor Components Industries, LLC, 2019  

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onsemi
” or its affiliates  
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−
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onsemi
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onsemi
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