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October 2016
FAM65V05DF1
Auto SPM
®
Series
Automotive 3-Phase IGBT Smart Power Module
Features
General Description
®
®
27 pin Auto SPM
module
FAM65V05DF1 is an advanced Auto SPM
module providing a fully-featured high-
performance auxiliary inverter output stage for
hybrid and electric vehicles.
These modules
integrate optimized gate drive of the built-in
IGBTs to minimize EMI and losses, while also
providing various protection features, in a
compact 12cm
2
footprint.
650 V-50 A
3-phase IGBT module with low loss IGBTs
and soft recovery diodes optimized for motor control
applications
Integrated gate drivers with Internal V
S
connection, Under
Voltage lockout, Over-current shutdown, Temperature
Sensing Unit and Fault reporting
Electrically isolated AlN substrate with low Rthjc
Module serialization for full traceability
Pb-Free and RoHS compliant
Applications Note
–
650 V
Auto SPM
®
Series;
Automotive 3-Phase IGBT Smart Power Module
UL Certified No. E209204 (UL 1557)
Automotive qualified
Use
r’s Guide
Applications and Benefits
Automotive high voltage auxiliary motors such as air
conditioning compressor and oil pump
Compact design
Simplified PCB layout and low EMI
Simplified Assembly
High reliability
Top View
Bottom View
Figure 1.
Package view
Ordering Information
Part Number
Marking
FAM65V05DF1
Package
Packing Method
Qty. per tube
Tube 10
Qty. per box
FAM65V05DF1
APM27-CAA
60
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
Pin Configuration
Figure 2.
Pin configuration
Pin Description
Pin Number
Pin
Pin Function Description
1
VCC(L)
COM
IN (UL)
IN (VL)
IN (WL)
VFO
Low-side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
2
3
Signal Input for Low-side U Phase
4
Signal Input for Low-side V Phase
5
Signal Input for Low-side W Phase
6
Fault Output
7
VTS
Output for LVIC temperature sense
8
CSC
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
9
IN (UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC
–
Link Input for U Phase
NV
Negative DC
–
Link Input for V Phase
NW
Negative DC
–
Link Input for W Phase
Output for U Phase
U
V
Output for V Phase
W
Output for W Phase
P
Positive DC
–
Link Input
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
2
Internal Equivalent Circuit and Input/Output Pins
Figure 3.
Schematic
Gate drivers block diagram
High side gate driver (x3 single channel):
Control circuit under-voltage (UV) protection
3.3/5 V CMOS/LSTTL compatible, Schmitt trigger input
High-Side Region
VB
HO
VS
AS7107X
UVLO
R
R
XOR
Common
Mode
Pre
Driver
Q
Common
Mode
Noise
Filter
VCC
Noise
Canceller
25V
Noise
Canceller
S
25V
25V
Input
Filter
Short-pulse
Generator
HIN
5K
Ω
COM
Figure 4.
High Side gate drivers (block diagram)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
3
Low side gate driver (x1 monolithic three-channel):
Control circuit under-voltage (UV) protection
Short circuit protection (SC)
Temperature sensing unit
Fault Output
3.3/5 V CMOS/LSTTL compatible, Schmitt trigger input
U-Phase
LINU
LOU
V-Phase
LINV
LOV
W-Phase
VDD
Pre
Driver
Input Filter
Matching delay
LOW
LINW
restart
5K
Ω
80mA
TSD
FO
TSU
(Temperature Sensing Unit)
TSU
CSC
VCC
COM
25V
AS4743X
Figure 5.
Low Side gate drivers (block diagram)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
4
Absolute Maximum Ratings
(T
J
= 25°C, Unless Otherwise Specified)
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability.
Inverter Part
Symbol
Parameter
Supply voltage
Condition
Rating
Unit
Applied between P- N
U
, N
V
, N
W
V
PN
500
V
Applied between P- N
U
, N
V
, N
W
dI/dt
≤
3A/ns
V
PN(Surge)
Supply Voltage (surge)
575
V
Collector-emitter Voltage at the
IGBT/diode
V
CES
± I
C
± I
CP
P
C
T
J
=25°C
650
50
V
A
A
IGBT continuous collector current
IGBT peak collector pulse current
Collector Dissipation
T
C
= 100°C, T
Jmax
=175°C
(Note1)
T
C
= 25°C, T
Jmax
=175°C,
150
V
CC
=V
BS
=15V, less than 1ms
(Note 6)
T
C
= 25°C per IGBT
IGBT/Diode
333
W
°C
°C
-40 ~ +175
-40 ~ +150
T
J
Junction Temperature
Driver IC
Control Part
Symbol
Parameter
Condition
Rating
Unit
V
CC
Control Supply Voltage
Applied between V
CC(H),
V
CC(L)
– COM
20
V
Applied between V
B(U)
– V
S(U)
, V
B(V)
V
S(V)
, V
B(W)
– V
S(W)
–
V
BS
V
IN
High-side Control Bias Voltage
Input Signal Voltage
20
V
V
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
IN
(UL)
, IN
(VL)
, IN
(WL)
– COM
,
-0.3 ~ V
CC
+0.3
V
FO
I
FO
Fault Output Supply Voltage
Fault Output Current
Applied between V
FO
– COM
Sink Current at V
FO
Pin
-0.3 ~ V
CC
+0.3
5
V
mA
V
V
SC
V
TS
Current Sensing Input Voltage
Temperature sense unit
Applied between C
SC
– COM
-0.3 ~ V
CC
+0.3
-0.3 ~ 2/3 x V
CC
)
V
Total System
Unit
Symbol
Parameter
Condition
Rating
T
STG
Storage Temperature
-40 ~ 125
°C
60Hz, Sinusoidal, AC 1 minute,
Connection Pins to heat sink plate
V
ISO
Isolation Voltage
2500
V
rms
°C
Max lead temperature at the base
of the package during pcb
assembly
T
LEAD
No remelt of internal solder joints
200
Package Characteristics
Symbol
Parameter
Conditions
Typ.
Max.
Units
R
th(j-c)Q
R
th(j-c)F
L
σ
Inverter IGBT part (per IGBT)
Inverter FWD part (per DIODE)
–
–
0.45
0.85
–
°C/W
°C/W
nH
Junction to Case Thermal
Package Stray Inductance
P to N
U
, N
V
, N
W
24
Notes:
1. Current
limited by package terminal, defined by design
2.
Case temperature measured below the package at the chip center, compliant with MIL STD 883-1012.1 (single
chip heating), DBC
discoloration allowed, please refer to application note
AN-9190
(Impact of DBC Oxidation on
SPM
®
Module Performance)
3.
Stray inductance per phase measured per IEC 60747-15
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
5
Electrical Specifications
Inverter part
(T
J
as specified)
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
CC
= V
BS
= 15 V, V
IN
= 5 V
I
C
= 50 A, T
J
= 25°C
–
1.65
–
V
V
CC
= V
BS
= 15 V, V
IN
= 5 V
I
C
= 50 A, T
J
= 125°C
–
–
1.9
2.4
V
V
F
FWD Forward Voltage
V
IN
= 0 V, I
F
= 30 A, T
J
= 25°C
2.1
1.9
–
V
V
V
IN
= 0 V, I
F
= 30 A, T
J
= 125°C
2.5
t
ON
t
C(ON)
t
OFF
V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 50 A
V
IN
= 0
V ↔ 5V,
Ls=55 nH,
–
–
–
–
–
–
–
–
–
0.73
0.12
0.80
0.14
0.10
0.70
0.15
0.87
0.19
–
–
–
–
–
–
–
–
–
High Side Switching Times
μs
μs
Inductive Load
t
C(OFF)
t
rr
HS
t
ON
t
C(ON)
t
OFF
V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 50 A
V
IN
= 0
V ↔ 5V,
Ls=55 nH,
High Side Switching Times
Low Side Switching Times
Inductive Load
t
C(OFF)
t
rr
T
J
= 125°C
–
–
0.20
0.68
0.20
0.86
0.19
0.14
0.64
0.24
0.88
0.23
0.20
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 50 A
V
IN
= 0
V ↔ 5
V, Ls=55 nH,
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
μs
μs
Inductive Load
LS
t
ON
Low Side Switching Times
V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 50 A
V
IN
= 0
V ↔ 5
V, Ls=55 nH,
t
C(ON)
t
OFF
t
C(OFF)
t
rr
Inductive Load
V
CC
= V
BS
= 15 V, V
PN
= 450 V,
T
J
= 25°C, Non-repetitive
T
J
= 25°C, V
CE
= 650 V
SCWT
–
–
–
5
3
–
–
μ
s
μ
A
μ
A
I
CES
Collector-Emitter Leakage
Current for IGBT and diode in
parallel
T
J
= 125°C, V
CE
= 650 V
150
1500
Notes:
4. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching times
of IGBT itself under the given gate driving condition internally. Refer to
Figure 6
for detailed information
5. Stray
inductance Ls is sum of stray inductance of module & setup
6. Verified
by design and bench-testing only
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
6
Control Part
(T
J
= -40°C to 150°C, unless otherwise specified, typical values specified at T
J
=125°C)
Symbol
Parameters
Conditions
V
CC
= 15 V,
IN
(UL, VL, WL)
= 0 V
Min
Typ
Max
Unit
V
CC(L)
–
COM
V
CC(H)
–
COM
I
QCCL
–
–
5
mA
Quiescent V
CC
Supply
Current
V
CC
= 15 V,
IN
(UH, VH, WH)
= 0 V
I
QCCH
–
–
–
–
150
μA
V
CC(UH)
–
COM
V
CC(VH)
–
COM
V
CC(WH)
–
COM
V
CC(UH, VH, WH)
= 15 V
f
PWM
= 20 kHz
Duty=50%, applied to
one PWM signal input
for high-side
I
PCCH
0.30
mA
Operating V
CC
Supply
Current
V
CC(UH, VH, WH)
= 15 V
f
PWM
= 20 kHz
Duty=50%, applied to
one PWM signal input
for low-side
V
CC(L)
–
COM
I
QCCL
–
–
8.5
mA
V
B(U)
– V
S(U)
V
B(V)
-V
S(V
V
B(W)
– V
S(W)
V
B(U)
– V
S(U)
V
B(V)
-V
S(V
Quiescent V
BS
Supply
Current
V
BS
= 15 V,
IN
(UH, VH, WH)
= 0V
I
QBS
–
–
–
–
–
–
150
4.5
–
μA
mA
V
Operating V
BS
Supply
Current
V
CC
=VBC=15 V
IN
(UH, VH, WH)
= 0 V
I
PBS
V
B(W)
– V
S(W)
V
SC
= 0 V, V
FO
Circuit: 4.7
kΩ to 5
V Pull-
V
FOH
up
4.5
–
Fault Output Voltage
V
SC
= 1 V, V
FO
Circuit: 4.7
kΩ to 5
V Pull-
V
FOL
up
0.5
V
V
SC(ref)
UV
CCD
Short-Circuit Trip Level
C
SC
-COM
0.45
10.6
0.52
–
0.59
13.2
V
V
Detection Level, T
J
= 125°C
UV
CCR
UV
BSD
UV
BSR
t
FOD
Reset Level, T
J
= 125°C
Detection Level, T
J
= 125°C
Reset Level, T
J
= 125°C
11.0
10.5
10.8
–
–
–
13.8
13
V
V
Supply Circuit Under-
Voltage Protection
–
13.3
–
V
Fault-out Pulse Width
60
μs
LVIC Temperature Sensing
Voltage Output
V
TS
–
2.4
–
V
V
IN(ON)
ON Threshold Voltage
OFF Threshold Voltage
–
2.6
1.2
3.1
–
V
V
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
,
IN
(UL)
, IN
(VL)
, IN
(WL)
–
COM
V
IN(OFF)
0.9
Notes:
7. Short-circuit
current protection is functional only for low side
8. T
LVIC
is the junction temperature of the LVIC itself
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
7
HINx
LINx
t
rr
t
off
t
on
100% I
Cx
I
Cx
90% I
Cx
10% V
CEx
10% V
CEx
10% I
Cx
10% I
Cx
v
CEx
t
c(on)
t
c(off)
Figure 6a.
Switching Time Definition
Figure 7b.
Switching Evaluation Circuit
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
8
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
Operating Conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
V
PN
Parameters
Supply Voltage
Conditions
Min
–
Typ
450
15
15
–
Max
500
16.5
18.5
1
Unit
V
Applied between P – N
U
, N
V
, N
W
Applied between V
CC(H),
V
CC(L)
COM
–
V
CC
Control Supply Voltage
High-side Bias Voltage
Control supply variation
13.5
13.3
-1
V
Applied between V
B(U)
– V
S(U)
V
B(V)
– V
S(V)
, V
B(W)
– V
S(W)
,
V
BS
V
dV
CC
/dt,
dV
BS
/dt
V/µs
µs
Blanking Time for Preventing Arm-
short
t
dead
f
PWM
For Each Input Signal
1.0
–
–
–
PWM Input Signal
T
C
= 125°C
–
20
kHz
Applied between N
U
, N
V
, N
W
V
SEN
Voltage for Current Sensing
Junction temperature
-4
–
–
4
V
–
COM (Including surge
voltage)
T
J
-40
150
°C
Mechanical Characteristics and Ratings
Limits
Typ.
0.62
Parameter
Conditions
Conditions
Units
Min.
0.51
Max.
Mounting Torque
Device Flatness
Weight
Mounting Screw: – M3
Recommended 0.62N•m
0.80
N•m
μm
g
+150
15
Figure 8
. Flatness Measurement Position
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
9
Typical Inverter Characteristics
100
90
80
70
60
50
40
30
20
10
0
100
T
J
=25
ꢀ
C
T
J
=125
ꢀ
C
T
J
=150
ꢀ
C
T
J
=25
ꢀ
C
90
T
J
=125
ꢀ
C
T
J
=150
ꢀ
C
80
70
60
50
40
30
20
10
0
0
1
2
3
4
0
1
2
3
4
V
CE
[V]
V
CE
[V]
Figure 9. Output characteristics IGBT inverter (typical)
Figure 10. Forward characteristics DIODE inverter
V
CC
= V
BS
= 15 V, V
IN
=5 V
(typical)
V
IN
=0 V
18.00
18.00
EON, VPN=450V
EON, VPN=450V
16.00
14.00
12.00
10.00
8.00
EOFF, VPN=450V
EON, VPN=300V
EOFF, VPN=300V
16.00
14.00
12.00
10.00
8.00
EOFF, VPN=450V
EON, VPN=300V
EOFF, VPN=300V
6.00
6.00
4.00
4.00
2.00
2.00
0.00
0.00
0
20
40
60
80
100
0
20
40
60
80
100
Collector Current I
C
(A)
Collector Current I
C
(A)
Figure 11. Switching losses IGBT inverter High-Side
(typical) versus
collector current
VCC = VBS = 15 V
Figure 12. Switching losses IGBT inverter Low-Side
(typical) versus
collector current
VCC = VBS = 15 V
VIN = 0 V
↔
5 V, Ls=55 nH, Inductive Load, T
J
=125°C
VIN = 0 V
↔
5 V, Ls=55 nH, Inductive Load, T
J
=125°C
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
10
Typical Inverter Characteristics
0.50
175
150
125
100
75
ERR, VPN=450V, HS
ERR, VPN=450V, LS
ERR, VPN=300V, HS
ERR, VPN=300V, LS
0.40
IC Module
IC Chip
0.30
0.20
0.10
0.00
50
25
0
0
100
200
300
400
500
600
700
0
20
40
60
80
100
V
CE
(V)
Forward Current I
F
(A)
Figure 13. Reverse recovery energy DIODE inverter
(typical) versus forward current
VCC = VBS = 15 V
Figure 14. Reverse Bias Safe Operating Area IGBT
(RBSOA) inverter
V
CC
= V
BS
= 15 V, Tj=150°C
VIN = 0 V
↔
5 V, Ls=55nH, Inductive Load, T
J
=125°C
1.00
1.00
ZthJC DIODE
ZthJC IGBT
0.10
0.10
i:
ri [°C/W]: 0.0070
0.1389 0.2439
τ
[s]:
1
2
3
4
i:
ri [°C/W]: 0.0264
0.0615 0.132
τ
[s]:
1
2
3
4
0.05
0.1411
1.05e-5 1.31e-4
2.09e-3 5.86e-
6.04e-6 5.8e-5 1.25e-3 5.14e-3
0.01
0.0001
0.01
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
T
i
me Duration (s)
T
i
me Duration (s)
Figure 15. Transient thermal impedance IGBT inverter
Figure 16. Transient thermal impedance DIODE inverter
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
11
Typical Controller Characteristics
3.50
3.00
2.50
2.00
1.50
1.00
0.50
3.50
VIN(ON)
VIN(OFF)
VTS
3.00
2.50
2.00
1.50
1.00
0.50
0.00
-40
-10
20
50
80
110
140
-40
-10
20
50
80
110
140
TJ
[
C]
TJ
[
C]
Figure 17. Temperature profile of V
TS
(typical)
Figure 18. Threshold voltage versus temperature
12.40
12.80
UVCCD
UVBSD
UVCCR
UVBSR
12.60
12.20
12.40
12.20
12.00
11.80
11.60
11.40
11.20
12.00
11.80
11.60
11.40
11.20
11.00
-40
-10
20
50
80
110
140
-40
-10
20
50
80
110
140
TJ
[
C]
TJ
[
C]
Figure 19. Supply under-voltage protection high-side
(typical)
Figure 20. Supply under-voltage protection low-side
(typical)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
12
Timing Chart Protective Functions
Lower arms
control input
A6
A7
Protection
circuit state
SET
RESET
Lower arms
gate input
A4
A3
A2
SC
A1
Output Current
Sensing Voltage
A8
SC Reference Voltage
t
FOD
A5
Fault Output Signal
Step
Description
A1
A2
A3
A4
Normal operation. IGBT on and carrying current
Short-circuit current threshold reached
Protection function triggered
IGBT turns off with soft turn-off
Fault output activated (initial
delay 2
μs
,
t
FOD
min.
50
μ
s
)
IGBT “LO” input
A5
A6
A7
A8
IGBT “HI” input is ignored
Current stays at zero during fault state
Figure 21.
Short-Circuit Current Protection
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
13
Input Signal
Protection Circuit
State
RESET
SET
RESET
UV
CCR
Filtering
B1
B6
Control
Supply Voltage
UV
CCD
B3
B4
B2
B7
Restart
Output Current
High-level (no fault output)
B5
Fault Output Signal
Step
Description
B1
B2
B3
B4
B5
B6
Control supply voltage rises above reset voltage UV
CCR
Normal operation. IGBT on and carrying current
Control supply voltage falls below detection voltage UV
CCD
Filtered supply voltage falls below UV
CCD
and IGBT turns off
Fault output activated (initial
delay 2
μs
,
t
FOD
min. 50
μ
s
)
Control supply voltage rises above reset voltage UV
CCR
IGBT “HI” input is followed after fault output duration and supply voltage
rise
B7
Figure 22
. Under-Voltage Protection (Low-side)
Input Signal
Protection Circuit
RESET
SET
RESET
State
UV
BSR
Filtering
C1
C5
Control
Supply Voltage
UV
BSD
C3
C4
C2
C6
Restart
Output Current
High-level (no fault output)
Fault Output Signal
Step
Description
C1
C2
Control supply voltage rises above reset voltage UV
CCR
Normal operation. IGBT on and carrying current
Control supply voltage falls below detection voltage
UV
CCD
Filtered supply voltage falls below UV
CCD
and IGBT turns
off
C3
C4
C5
C6
Control supply voltage rises above reset voltage UV
CCR
IGBT “HI” input is followed after supply voltage rise
Figure 23
Under-Voltage Protection (High-side)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
14
Physical Dimensions
Dimension is in millimeter unless otherwise noted.
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
15
Physical Dimensions
Note: Marking pattern shown for final production version, which slightly differ from previous
engineering versions.
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
16
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