onsemi-FCD600N65S3R0
| Part # | onsemi-FCD600N65S3R0 |
Download  | onsemi-FCD600N65S3R0 |
FCD600N65S3R0
SUPERFET III, Easy Drive
650
V
, 6
A
, 600 m
W
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
600 m
W
@ 10 V
6 A
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
D
Features
•
700 V @ T
= 150
°
C
J
G
•
Typ. R
= 493 m
W
DS(on)
•
Ultra Low Gate Charge (Typ. Q
= 11 nC)
S
g
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
= 127 pF)
N-Channel MOSFET
oss(eff.)
D
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
Compliant
G
S
Applications
D
−
PAK
TO
−
252
CASE 369AS
•
Computing / Display Power Supplies
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
MARKING DIAGRAM
•
Lighting / Charger / Adapter
$Y&Z&3&K
FCD600
N65S3R0
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&Z
&3
&K
FCD600N65S3R0 =
Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019
−
Rev. 4
FCD600N65S3R0/D
FCD600N65S3R0
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
C
Symbol
Parameter
Value
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
650
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T
= 25
°
C)
6
3.8
A
C
Continuous (T
= 100
°
C)
C
I
Drain Current
15
A
mJ
A
DM
E
MOSFET dv/dt
24
AS
AS
I
1.6
E
0.54
100
mJ
V/ns
AR
dv/dt
Power Dissipation
20
P
(T =
25
°
C)
54
W
W/
°
C
°
C
D
C
Derate Above 25
°
C
0.43
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 s
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse-width limited by maximum junction temperature.
2. I
= 1.6 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
3 A, di/dt
≤
200 A/
m
s, V
≤
400 V, starting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
2.3
Unit
R
R
Thermal Resistance, Junction to Case, Max.
_
C/W
q
JC
JA
52
q
2
4. Device
on 1 in
pad 2 oz copper pad on 1.5 x 1.5 in. board of FR
−
4 material.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping (Qty / Packing)
FCD600N65S3R0
FCD600N65S3R0
D
−
PAK
(DPAK3 (TO
−
252 3LD))
(Pb
−
Free / Halogen Free)
330 mm
16 mm
2500 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
FCD600N65S3R0
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
= 0
V
, I
= 1 mA, T
= 150
_
C
GS
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
= 1 mA, Referenced to 25
_
C
0.66
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650
V
, V
= 0 V
−
−
−
−
0.3
−
1
m
A
DSS
GS
= 520
V
, T
=
1
25
_
C
−
C
I
Gate to Body Leakage Current
=
30
V
, V
= 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 0.12 mA
2.5
−
−
4.5
600
−
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
= 3 A
493
3.6
D
g
FS
= 20
V
, I
= 3 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
465
10
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V
= 0 V
127
17
oss(eff.)
GS
C
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
Q
= 400
V
, I
= 3
A
, V
= 10 V
11
g(tot)
D
GS
Q
3
gs
Q
4.9
0.9
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400
V
, I
= 3
A
,
−
−
−
−
11
9
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10
V
, R
=
4
.7
W
g
t
r
t
29
14
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
6
A
A
V
S
I
15
1.2
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0
V
, I
= 3 A
SD
t
Reverse Recovery Time
V
= 0
V
, I
= 3
A
,
−
−
198
1.6
−
−
ns
rr
GS
F
SD
dI /dt
= 100 A/
m
s
Q
Reverse Recovery Charge
m
C
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially
independent of operating temperature typical characteristics.
3
FCD600N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS
30
10
20
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
*Notes:
1. V
= 20 V
DS
10
2. 250
m
s Pulse
T
e
st
150
°
C
5.5 V
1
0.1
25
°
C
1
−
55
°
C
*Notes:
1. 250
m
s Pulse
T
e
st
2. T
= 25
°
C
C
0.01
0.1
0.2
1
10
3
4
5
6
7
8
9
V ,
Gate
−
Source Voltage [V]
GS
V ,
Drain
−
Source Voltage [V]
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
0.8
0.4
0.0
100
10
*Note: T
= 25
°
C
*Notes:
C
1. V
= 0 V
GS
2. 250
m
s Pulse
T
e
st
150
°
C
1
V
GS
= 10 V
25
°
C
0.1
V
GS
= 20 V
−
55
°
C
0.01
0.001
0
3
6
9
12
0.0
0.5
1.0
1.5
V
SD
, Body Diode Forward Voltage [V]
I ,
Drain Current [A]
D
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
10000
*Note: I
= 3 A
D
C
iss
C
oss
C
rss
8
6
1000
100
10
V
DS
= 130 V
V
DS
= 400 V
4
2
*Notes:
1 V
= 0 V
GS
2. f = 1 MHz
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
= C
+ C
= C
1
iss
oss
rss
ds
gd
gd
0
0.1
0.1
0
3
6
9
12
1
10
100
1000
Q ,
Total Gate Charge [nC]
g
V ,
Drain
−
Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FCD600N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
1.2
1.1
1.0
0.9
0.8
3.0
*Notes:
*Notes:
1. V
= 10 V
1. V
= 0 V
GS
GS
2.5
2. I
= 3 A
D
2. I
= 10 mA
D
2.0
1.5
1.0
0.5
0.0
−
50
0
50
100
150
−
50
0
50
100
150
T ,
Junction Temperature [
5
C]
J
T ,
Junction Temperature [
5
C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
8
6
4
2
0
30
10
m
s
10
100
m
s
1 ms
10 ms
DC
1
Operation in This Area
is Limited by R
DS(on)
0.1
0.01
*Notes:
1. T
= 25
°
C
C
2. I
= 10 mA
D
3. Single Pulse
1
10
100
1000
25
50
75
100
125
150
V ,
Drain
−
Source Voltage [V]
DS
T ,
Case Temperature [
5
C]
C
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0
0
130
260
390
520
650
V ,
Drain
−
Source Voltage [V]
DS
Figure 11. E
OSS
vs. Drain to Source Voltage
5
FCD600N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
SINGLE PULSE
10
−
4
0.001
10
−
5
10
−
3
10
−
2
10
−
1
10
0
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
6
FCD600N65S3R0
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
FCD600N65S3R0
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO
−
252 3 LD)
CASE 369AS
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO
−
252 3 LD)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
