onsemi-FCH072N60
| Part # | onsemi-FCH072N60 |
Download  | onsemi-FCH072N60 |
MOSFET
– N-Channel,
SUPERFET
)
II
600
V
,
5
2 A, 72 m
W
FCH072N60
Description
SUPERFET II MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II MOSFET is suitable for various AC/DC
power conversion for system miniaturization and higher efficiency.
V
R
MAX
I MAX
D
DS
DS(ON)
600 V
72 m
W
@ 10 V
52 A
D
Features
•
Typ. R
= 66 m
W
•
650 V @ T
= 150
°
C
DS(on)
J
•
Ultra Low Gate Charge (Typ. Q
= 95 nC)
G
g
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
= 421 pF)
oss(eff.)
S
•
These Devices are Pb
−
Free and are RoHS Compliant
N-CHANNEL MOSFET
Applications
•
Telecom / Sever Power Supplies
•
Industrial Power Supplies
S
D
G
TO
−
247
−
3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
072N60
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FCH072N60
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2019
−
Rev. 3
FCH072N60/D
FCH072N60
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
FCH072N60
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
600
20
−
DC
V
−
AC (f > 1 Hz)
30
I
D
Drain Current:
−
Continuous (T
= 25
°
C)
52
A
C
−
Continuous (T
= 100
°
C)
33
C
I
I
Drain Current:
−
Pulsed (Note 1)
156
A
mJ
A
DM
E
AS
AR
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
1128
9.5
E
4.8
mJ
V/ns
AR
dv/dt
100
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T =
25
°
C)
481
W
W/
°
C
°
C
D
C
−
Derate Above 25
°
C
3.85
−
55 to + 150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 9.5 A, R
= 25
W
, Starting T
= 25
°
C.
AS
G
J
3. I
≤
26 A, di/dt
≤
200 A/
m
s, V
≤
380 V, Starting T
= 25
°
C.
SD
DD
J
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
FCH072N60
FCH072N60
TO
−
247
Tube
N/A
N/A
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
FCH072N60
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.26
40
°
C/W
R
q
JC
JA
R
q
2
FCH072N60
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
= 10 mA, V
= 0
V
, T
= 25
°
C
600
650
−
−
−
−
−
−
V
DSS
D
GS
J
I
D
= 10 mA, V
= 0
V
, T
= 150
°
C
GS J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 10 mA, Referenced to 25
°
C
0.67
V/
°
C
m
A
DSS
J
I
Zero Gate Voltage Drain Current
V
V
V
= 600
V
, V
= 0 V
−
−
−
−
4.1
−
1
DSS
DS
DS
GS
GS
= 480
V
, V
= 0 V, T
=
1
25
°
C
−
GS
C
I
Gate to Body Leakage Current
=
20
V
, V
= 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 250
m
A
2.5
−
−
3.5
72
−
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
=
2
6 A
66
48
D
g
FS
= 20
V
, I
=
2
6 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 380
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
4430
115
4.43
421
95
5890
155
−
pF
pF
pF
pF
nC
nC
nC
W
iss
oss
rss
DS
GS
C
C
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
C
V
V
= 0 V to 480
V
, V
= 0 V
−
oss(eff.)
DS
GS
Q
= 380
V
, I
=
2
6 A
V =
10 V
125
−
g(tot)
DS
D
,
GS
(Note 4)
Q
21
gs
Q
24
−
gd
ESR
f = 1 MHz
0.93
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn
−
On Rise Time
Turn-Off Delay Time
Turn
−
Off Fall Time
V
V
= 380
V
, I
=
2
6 A,
−
−
−
−
33
23
97
3.5
76
56
ns
ns
ns
ns
d(on)
DD
GS
D
= 10
V
, R
=
4
.7
W
g
t
r
(Note 4)
t
204
17
d(off)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
−
52
156
1.2
−
A
A
S
I
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
=
2
6 A
−
V
GS
SD
t
rr
= 0
V
, I
=
2
6 A,
495
13
ns
m
C
GS
SD
dI /dt
= 100 A/
m
s
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature.
3
FCH072N60
TYPICAL CHARACTERISTICS
200
100
200
*Notes:
V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
GS =
100
10
1
1. V
= 20 V
DS
2. 250
m
s Pulse
T
e
st
150
o
C
25
o
C
o
10
−
55 C
*Notes:
1. 250
m
s Pulse
T
e
st
2. T
= 25
°
C
C
1
0.1
1
10 20
2
3
4
5
6
7
V
DS
, Drain
−
Source Voltage[V]
V
GS
, Gate
−
Source Voltage[V]
Figure 2. Transfer Characteristics
Figure 1. On
−
Region Characteristics
200
100
0.15
0.12
*Note: T
C
= 25
o
C
*Notes:
1. V
= 0 V
GS
2. 250
m
s Pulse
T
e
st
10
1
150
o
C
25
o
C
0.1
0.01
0.09
0.06
V
GS
= 10V
V
GS
= 20V
0.001
0.3
0.6
0.9
1.2
1.5
0.0
0
40
80
120
160
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 3. On
−
Resistance Variation vs. Drain
Current and Gate Voltage
10
100000
*Note:
I
D
= 26A
V
DS
= 120V
C
iss
10000
1000
100
8
V
DS
= 300V
DS
= 480V
6
C
oss
V
*Notes:
4
1. V
= 0 V
GS
2. f = 1 MHz
10
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
C
rss
2
0
iss
oss
rss
= C
+ C
ds
gd
= C
gd
1
0.3
0
20
40
60
80
100
0.1
1
10
100
600
V
DS
, Drain
−
Source Voltage [V]
Q ,
T
o
tal gate Charge [nC]
g
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
4
FCH072N60
TYPICAL CHARACTERISTICS
2.5
1.2
1.1
1.0
0.9
0.8
*Notes:
*Notes:
1. V
= 10 V
1. V
= 0 V
GS
GS
2. I
= 26 A
D
2. I
= 10 mA
D
2.0
1.5
1.0
0.5
−
100
−
50
0
50
100
150
200
−
100
−
50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 8. On
−
Resistance Variation
Figure 7. Breakdown Voltage Variation
vs. Temperature
vs. Temperature
300
60
48
36
24
12
0
100
10
1
10
m
s
m
s
100
1ms
10ms
Operation in This Area
DC
is Limited by R
DS(on)
*Notes:
1. T
= 25
°
C
C
2. T
= 150
°
C
J
3. Single Pulse
0.1
0.1
1
10
100
1000
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
V
DS
, Drain
−
Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 9. Maximum Safe Operating Area
30
24
18
12
6
0
0
120
240
360
480
600
V
DS
, Drain to Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
5
FCH072N60
TYPICAL CHARACTERISTICS
0.5
0.1
0.5
P
DM
0.2
0.1
t
1
t
2
*Notes:
1. Z
(t) = 0.26
°
C/W Max.
0.05
0.02
q
JC
2. Duty Factor, D = t /t
1
2
0.01
Single pulse
3. T
−
T =
P
* Z
(t)
q
JC
JM
C
DM
0.01
10
−
3
10
−
2
10
−
1
10
0
10
−
5
10
−
4
t , Rectangular Pulse Duration [sec]
1
Figure 12. Transient Thermal Response Curve
6
FCH072N60
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
FCH072N60
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM
MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
ZZ =
Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO
−
247
−
3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi’s
product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
