onsemi-FCH104N60
| Part # | onsemi-FCH104N60 |
Download  | onsemi-FCH104N60 |
June 2014
FCH104N60
N-Channel SuperFET
II MOSFET
®
600 V, 37 A, 104 m
Ω
Features
Description
•
•
•
•
•
•
650 V @ T
J
= 150°C
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
Typ. R
DS(on)
= 96 m
Ω
Ultra Low Gate Charge (Typ. Q
g
= 63 nC)
Low Effective Output Capacitance (Typ. C
oss(eff.)
= 280 pF)
100% Avalanche
T
e
sted
RoHS Compliant
Applications
•
•
T
e
lecom / Sever Power Supplies
Industrial Power Supplies
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
Parameter
FCH104N60
600
Unit
Drain to Source Voltage
Gate to Source Voltage
V
– DC
±20
V
GSS
I
D
V
A
– AC
(f > 1 Hz)
±30
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
37
Drain Current
24
I
DM
E
AS
I
AR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
111
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
809
6.8
E
AR
Repetitive Avalanche Energy
MOSFET dv/dt
3.57
100
mJ
dv/dt
P
D
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
(T
C
= 25
o
C)
– Derate Above 25
o
C
357
W
W/
o
C
o
C
Power Dissipation
2.85
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
o
C
Thermal Characteristics
Symbol
Parameter
Unit
FCH104N60
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.35
40
o
C/W
1
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FCH104N60
FCH104N60
TO-247
Tube
N/A
N/A
30 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25
°
C
600
650
–
–
–
–
V
V
BV
DSS
Drain to Source Breakdown Voltage
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150
°
C
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 10 mA, Referenced to 25
o
C
DS
= 600 V, V
GS
= 0 V
–
0.67
–
V/
o
C
V
–
–
–
–
1.98
–
1
–
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
V
DS
= 480 V, V
GS
= 0
V
,
T
C
= 125
o
C
V
GS
= ±20 V, V
DS
= 0 V
±100
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 18.5 A
V
DS
= 20
V
,
I
D
= 18.5 A
2.5
–
3.5
104
–
V
m
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
96
33
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
3130
75
4165
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 380 V, V
GS
= 0 V,
f = 1 MHz
C
oss
C
rss
Output Capacitance
100
Reverse Transfer Capacitance
Effective Output Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
3.66
280
63
–
–
C
oss(eff.)
Q
g(tot)
Q
gs
V
DS
= 0 V to 480
V
,
V
GS
= 0 V
82
–
V
V
DS
= 380 V, I
D
= 18.5 A,
GS
= 10 V
14
(Note 4)
Q
gd
15
–
ESR
f = 1 MHz
0.97
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
26
18
72
3.3
62
46
ns
ns
ns
ns
V
DD
= 380 V, I
D
= 18.5 A,
V
GS
= 10 V, R
g
= 4.7
Ω
154
17
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
37
114
1.2
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 18.5 A
–
V
414
8.8
ns
μ
C
V
GS
= 0 V, I
SD
= 18.5 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive Rating: pulse width limited by maximum junction temperature.
2. I
= 6.8 A, R
= 25
Ω
, Starting T
= 25
°
C
AS
G
J
3. I
≤
18.5 A, di/dt
≤
200 A/
μ
s, V
≤
380
V
, Starting T
= 25
°
C
SD
DD
J
4. Essentially Independent of Operating
T
e
mperature.
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
2
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
100
*Notes:
V
GS
=
10.0V
1. V
DS
= 10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
100
2. 250
μ
s Pulse Test
150
o
C
25
o
C
-55
o
C
10
10
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
1
1
0.3
2
3
4
5
6
7
1
10
20
V
GS
, Gate-Source Voltage[V]
V
DS
, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
0.24
*Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
2. 250
μ
s Pulse Test
10
0.20
0.16
150
o
C
1
25
o
C
0.1
V
GS
= 10V
0.12
0.01
0.001
V
GS
= 20V
0.08
0.0
0.3
0.6
0.9
1.2
1.5
0
20
40
60
80
100
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
20000
*Note: I
D
= 18.5A
10000
1000
100
10
V
DS
= 120V
C
iss
8
V
DS
= 300V
V
DS
= 480V
6
C
oss
4
2
0
*Note:
1. V
GS
= 0V
2. f = 1MHz
1
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
iss
= C
+ C
ds gd
C
rss
oss
rss
= C
gd
0.1
0
14
28
42
56
70
0.1
1
10
100
600
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
3
Typical Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
2.5
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
2. I
D
= 10mA
1.1
2. I
D
= 18.5A
2.0
1.5
1.0
0.5
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
40
30
20
10
0
300
10
μ
s
100
100
μ
s
10
1ms
10ms
Operation in This Area
is Limited by R
DS(on)
DC
1
0.1
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
100
0.01
25
50
75
100
125
150
1
10
1000
T
C
, Case Temperature [
o
C]
V
DS
, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
20
16
12
8
4
0
0
120
240
360
480
600
V
DS
, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
4
Typical Characteristics
(Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1
0.2
0.1
P
DM
0.05
t
1
t
2
0.02
0.01
0.01
1E-3
*Notes:
1. Z
θ
JC
(t) = 0.35
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
Single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Rectangular Pu
se Durat
on [sec]
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
5
Figure 13. Gate Charge Test Circuit & Waveform
I
= const.
G
Figure 14. Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
V
GS
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
6
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
7
Mechanical Dimensions
TO-247 3L
Figure 17. TO-247,Molded, 3 Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
F-PFS™
®*
AX-CAP
®
*
FRFET
®
®
BitSiC™
Global Power Resource
SM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
G
max
™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
PowerTrench
®
PowerXS™
TinyBoost
®
TinyBuck
®
TinyCalc™
TinyLogic
®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
Current Transfer Logic™
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficentMax™
ESBC™
Programmable Active Droop™
QFET
®
QS™
TINYOPTO™
TinyPower™
TinyPWM™
Quiet Series™
RapidConfigure™
™
TinyWire™
TranSiC™
ng our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
®
TriFault Detect™
TRUECURRENT
®
*
μ
SerDes™
®
Fairchild
®
MillerDrive™
STEALTH™
UHC
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
MotionMax™
SuperFET
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
mWSaver
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
®
SyncFET™
Sync-Lock™
FAST
®
FastvCore™
FETBench™
FPS™
OptoHiT™
OPTOLOGIC
®
OPTOPLANAR
®
? ?
™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
9
