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November 2013
FCI25N60N
N-Channel SupreMOS
MOSFET
®
600 V, 25 A, 125 m
Ω
Features
Description
The SupreMOS
®
MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFE
T
s
. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
•
•
•
•
•
R
DS(on)
= 107 m
Ω
(Typ.) @ V
GS
= 10
V
,
I
D
= 12.5 A
Ultra Low Gate Charge (Typ. Q
g
= 57 nC)
Low Effective Output Capacitance (Typ. C
oss(eff.)
= 262 pF)
100% Avalanche Tested
RoHS Compliant
Application
•
•
Solar Inverter
AC-DC Power Supply
D
G
G
I
2
-PAK
D
S
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
Parameter
FCI25N60N_F102
Unit
V
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
25
I
D
Drain Current
A
16
I
DM
E
AS
I
AR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
75
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
861
8.3
E
AR
Repetitive Avalanche Energy
MOSFET dv/dt
2.2
mJ
100
dv/dt
P
D
V/ns
Peak Diode Recovery dv/dt
(Note 3)
15
(T
C
= 25
o
C)
– Derate Above 25
o
C
216
W
W/
o
C
o
C
Power Dissipation
1.72
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
o
C
Thermal Characteristics
Symbol
Parameter
FCI25N60N_F102
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.58
62.5
o
C/W
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
I
2
-PAK
Packing Method
Reel Size
Tape Width
Quantity
FCI25N60N_F102
FCI25N60N
Tube
N/A
N/A
50 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0 V,T
J
= 25
o
C
D
= 1 mA, Referenced to 25
o
C
DS
= 480 V, V
GS
= 0 V
600
–
–
–
–
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.74
V/
o
C
V
–
–
–
–
–
–
10
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
V
DS
= 480 V, T
J
= 125
o
C
100
V
GS
= ±30 V, V
DS
= 0 V
±100
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 12.5 A
V
DS
= 20 V, I
D
= 12.5 A
2.0
–
4.0
0.125
–
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
0.107
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
–
2520
103
3.2
55
3352
pF
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 100 V, V
GS
= 0
V
,
f = 1 MHz
C
oss
C
rss
Output Capacitance
137
Reverse Transfer Capacitance
Output Capacitance
5
–
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
V
DS
= 380 V, V
GS
= 0
V
, f = 1
M
Hz
V
DS
= 0 V to 480 V, V
GS
= 0 V
Effective Output Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
262
57
–
74
–
V
V
DS
= 380 V, I
D
= 12.5 A,
GS
= 10 V
10
(Note 4)
Q
gd
18
–
ESR
f = 1 MHz
1
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
21
22
68
5
52
54
ns
ns
ns
ns
V
DD
= 380
V
,
I
D
= 12.5 A,
V
GS
= 10
V
,
R
G
= 4.7
Ω
146
20
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
25
75
1.2
–
A
A
I
SM
V
SD
t
rr
–
–
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 12.5 A
V
370
7
ns
μ
C
V
GS
= 0 V, I
SD
= 12.5 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I
= 8.3 A, R
= 25
Ω
, starting T
= 25
°
C.
AS
G
J
3. I
≤
25 A, di/dt
≤
200 A/
μ
s, V
≤
380 V, starting T
= 25
°
C.
SD
DD
J
4. Essentially independent of operating temperature typical characteristics.
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
V
GS
= 15V
10V
8V
6V
4V
25
o
C
10
10
150
o
C
-55
o
C
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
1
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
1
0.3
0.05 0.1
2
4
6
8
1
10
30
V
GS
, Gate-Source Voltage[V]
V
DS
, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
350
300
250
100
150
o
C
10
25
o
C
200
V
GS
= 10V
150
100
V
GS
= 20V
*Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
60 80
2. 250
μ
s Pulse Test
1
0.4
0.6
0.8
1.0
1.2
0
20
40
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10
5
C
oss
V
DS
= 120V
DS
= 300V
DS
= 480V
10
4
8
V
V
C
iss
10
3
6
4
2
0
C
rss
10
2
*Note:
1. V
GS
= 0V
2. f = 1MHz
10
1
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
*Note: I
D
= 12.5A
40 50
C
rss
= C
gd
10
0
0
10
20
30
60
0.1
1
10
100
600
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
0.5
2. I
D
= 1mA
2. I
D
= 12.5A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
T
J
, Junction Temperature
[
C
]
T
J
, Junction Temperature
[
C
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
30
25
20
15
10
5
100
10
μ
s
100
μ
s
1ms
10
10ms
DC
Operation in This Area
1
is Limited by R
DS(on)
*Notes:
0.1
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
0.01
0
25
50
75
100
125
150
1
10
100
1000
o
T
C
, Case Temperature
[
C
]
V
DS
, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
0.05
P
DM
0.02
0.01
t
1
t
2
0.01
*Notes:
Single pulse
1. Z
θ
JC
(t) = 0.58
o
C/W Max.
2. Duty Factor, D = t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t ,
Rectangular Pulse Duration [sec]
1
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
4
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
6
Mechanical Dimensions
2
Figure 16. TO262 (I PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
7
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intended to be an exhaustive list of all such trademarks.
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Sync-Lock™
®*
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®
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tm
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GreenBridge™
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PowerXS™
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QS™
Quiet Series™
RapidConfigure™
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TinyBoost
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G
max
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I66
©2010 Fairchild Semiconductor Corporation
FCI25N60N Rev. C1
8
ON Semiconductor and
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