onsemi-FCMT360N65S3
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N-Channel, SUPERFET
)
III,
Easy-Drive
650
V
,
1
0 A, 360 m
W
FCMT360N65S3
General Description
SuperFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
360 m
ꢀ
@ 10 V
10 A
Consequently, SuperFET III MOSFET Easy
−
drive series helps
manage EMI issues and allows for easier design implementation.
The Power88 package is an ultra
−
slim surface
−
mount package
D
S1 : Driver Source
S2 : Power Source
2
(1 mm
high) with a low profile and small footprint (8×8 mm ).
SuperFET III MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. Power88 offers Moisture
Sensitivity Level 1 (MSL 1).
G
S1 S2
Features
N-CHANNEL MOSFET
•
700 V @ T
= 150
°
C
J
•
Typ R
= 310 m
ꢀ
DS(on)
•
Ultra Low Gate Charge (Typ. Q
= 18 nC)
g
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
•
These Devices are Pb
−
Free and are RoHS Compliant
= 173 pF)
oss(eff.)
S2
S2
S1
G
PQFN4 8X8 2P
CASE 483AP
Applications
•
Computing / Display Power Supplies
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
•
Lighting / Charger / Adapter
MARKING DIAGRAM
&Z&3&K
FCMT
360N65S3
&Z
&3
&K
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
FCMT360N65S3 =
Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2020
−
Rev. 1
FCMT360N65S3/D
FCMT360N65S3
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise specified)
C
Symbol
Parameter
Value
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
650
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T
= 25
°
C)
10
A
C
Continuous (T
= 100
°
C)
6
25
C
I
Drain Current
A
mJ
A
DM
E
MOSFET dv/dt
40
AS
AS
I
2.1
E
0.83
100
mJ
V/ns
AR
dv/dt
Power Dissipation
20
P
(T =
25
°
C)
83
W
W/
°
C
°
C
D
C
Derate Above 25
°
C
0.67
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 s
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse
−
width limited by maximum junction temperature.
2. I
= 2.1 A, R
= 25
ꢀ
starting T
= 25
°
C
AS
G
J
3. I
≤
5 A, di/dt
≤
200 A/
ꢁ
s, V
≤
400
V
,
s
tarting T
= 25
°
C
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.5
Unit
Thermal Resistance, Junction to Case, Max.
°
C/W
R
R
ꢂ
JC
JA
45
ꢂ
2
4. Device
on 1 in
pad 2 oz copper pad on 1.5 x 1.5 in. board of FR
−
4 material.
ORDERING INFORMATION
†
Device
Marking
Package
Reel Size
Tape Width
Quantity
FCMT360N65S3
FCMT360N65S3
PQFN8
13
″
13.3 mm
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
2
FCMT360N65S3
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0
V
, I
= 1
m
A, T
= 25
°
C
650
700
V
V
DSS
GS
D
J
= 0
V
, I
= 1
m
A, T
= 150
°
C
GS
D
J
ꢃ
BV
Breakdown Voltage
T
e
mperature
Coefficient
I
= 1mA, referenced to 25
°
C
0.68
0.58
V/
°
C
DSS
J
D
/
ꢃ
T
I
Zero Gate Voltage Drain Current
V
V
V
= 650 V, V
= 0 V
10
ꢁ
A
nA
V
DSS
DS
DS
GS
GS
= 520 V, T
= 125
°
C
C
I
Gate to Source Leakage Current
=
30
V
, V
= 0 V
100
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
V
V
= V
, I
= 200
ꢁ
A
2.5
4.5
GS(th)
DS(on)
GS
GS
DS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
= 5 A
310
6
360
m
ꢀ
D
g
FS
= 20
V
, I
= 5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
730
15
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
V
= 0 V to 400
V
, V
= 0 V
173
26
oss(eff.)
DS
DS
DS
GS
C
= 0 V to 400
V
, V
= 0 V
GS
oss(er.)
Q
= 400
V
, V
=
1
0
V
,
18
g(tot)
GS
I
= 5 A
D
Q
4.3
7.6
1
gs
Q
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 400
V
, I
= 5
A
, V
= 10
V
,
GEN
12
11
34
10
ns
ns
ns
ns
d(on)
DD
D
GS
R
= 4.7
ꢀ
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
SOURCE
−
DRAIN DIODE CHARACTERISTICS
I
S
Source to Drain Diode Forward VoltageMaximum Continuous Source to Drain
Diode Forward Current
10
A
I
Maximum Pulsed Source to Drain Diode Forward Current
25
A
V
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= 5 A
1.2
SD
GS
SD
t
rr
= 400
V
, I
= 5
A
,
di /dt
= 100 A/
ꢁ
s
241
2.4
ns
ꢁ
C
DD
SD
F
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially
independent of operating temperature typical characteristics.
3
FCMT360N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
50
10
50
V
GS
=
10.0V
*Notes:
1. V
= 20V
8.0V
7.0V
6.5V
6.0V
5.5V
DS
2. 250
ꢁ
s Pulse Test
10
1
150
o
C
25
o
C
1
−
55
o
C
*Notes:
1. 250
ꢁ
s Pulse Test
2. T
C
= 25
o
C
0.1
0.1
0.2
1
10
20
2
3
4
5
6
7
8
V
DS
, Drain
−
Source Voltage[V]
V
GS
, Gate
−
Source Voltage[V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
10
1
*Note: T
C
= 25
o
C
*Notes:
1. V
GS
= 0V
2. 250
ꢁ
s Pulse Test
150
o
C
25
o
C
V
GS
= 10V
0.1
V
GS
= 20V
o
−
55 C
0.01
0.001
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
100000
*Note:
I
D
= 5A
10000
1000
100
8
V
DS
= 130V
C
iss
V
DS
= 400V
6
4
2
0
C
oss
*Note:
1. V
= 0V
GS
10
2. f = 1MHz
C
C
C
= C
+ C
(C
= shorted)
gs gd
ds
iss
C
rss
1
= C
+ C
oss
rss
ds
gd
gd
= C
0.1
0.1
0
5
10
15
20
1
10
100
1000
Q
g
, Total Gate Charge [nC]
V
DS
, Drain
−
Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FCMT360N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
3.0
1.2
1.1
1.0
0.9
0.8
*Notes:
1. V
= 10V
*Notes:
1. V
= 0V
GS
GS
2.5
2.0
1.5
1.0
0.5
0.0
2.
I
D
= 5A
2.
I
D
= 10mA
−
50
0
50
100
150
−
50
0
50
100
150
T
J
, Junction Temperature
[
o
C]
T
J
, Junction Temperature
[
o
C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
12
10
8
100
10
10
ꢁ
s
100
ꢁ
s
1ms
10ms
DC
6
1
Operation in This Area
is Limited by R
DS(on)
4
*Notes:
1. T
C
= 25
o
C
0.1
0.01
2
2. T
= 150
o
3. Single Pulse
C
J
0
25
50
75
100
125
150
1
10
100
1000
V
DS
, Drain
−
Source Voltage [V]
T
C
, Case Temperature [
o
C]
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
5
4
3
2
1
0
0
130
260
390
520
650
V
DS
, Drain to Source Voltage [V]
Figure 11. E
OSS
vs. Drain to Source Voltage
5
FCMT360N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
ꢂ
JC
ꢂ
JC
R
= 1.5
C/W
ꢂ
JC
Peak T
= P
Duty Cycle, D = t
/ t
x Z
(t) + T
SINGLE PULSE
10
−
4
J
DM
ꢂ
JC
C
1
2
0.001
10
−
5
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
6
FCMT360N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= Const.
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
FCMT360N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13664G
PQFN4 8X8, 2P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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©
Semiconductor Components Industries, LLC, 2019
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,
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