onsemi-FCP16N60N
| Part # | onsemi-FCP16N60N |
Download  | onsemi-FCP16N60N |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most
current and up-to-date ordering information can be found at
www.onsemi.com
. Please
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2013
FCP16N60N / FCPF16N60NT
®
N-Channel SupreMOS
MOSFET
600 V, 16 A, 199 m
Ω
Features
Description
The SupreMOS
®
MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFE
T
s
. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
•
•
•
•
•
R
DS(on)
= 170 m
Ω
(Typ.) @ V
GS
= 10
V
,
I
D
= 8 A
Ultra Low Gate Charge (Typ. Q
g
= 40.2 nC)
Low Effective Output Capacitance (Typ. C
oss(eff.)
= 176 pF)
100% Avalanche Tested
RoHS Compliant
Application
•
•
•
•
LCD/LED/PDP TV
Lighting
Solar Inverter
AC-DC Power Supply
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
Parameter
FCP16N60N FCPF16N60NT
Unit
V
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
16.0
10.1
48.0
16.0*
10.1*
48.0*
I
D
Drain Current
A
I
DM
E
AS
I
AR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
355
5.3
E
AR
Repetitive Avalanche Energy
MOSFET dv/dt
1.34
100
20
mJ
V/ns
V/ns
W
W/
o
C
o
C
dv/dt
P
D
Peak Diode Recovery dv/dt
(Note 3)
(T
C
= 25
o
C)
– Derate Above 25
o
C
134.4
1.08
35.7
0.29
Power Dissipation
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
FCP16N60N FCPF16N60NT
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.93
62.5
3.5
o
C/W
62.5
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
1
Package Marking and Ordering Information
Part Number
FCP16N60N
Top Mark
FCP16N60N
FCPF16N60NT
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
FCPF16N60NT
TO-220F
Tube
N/A
N/A
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0V, T
C
= 25
o
C
D
= 1 mA, Referenced to 25
o
C
DS
= 480 V, V
GS
= 0 V
600
–
–
–
–
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.73
V/
o
C
V
–
–
–
–
–
–
10
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
V
DS
= 480 V, V
GS
= 0 V, T
C
= 125
o
C
100
V
GS
= ±30 V, V
DS
= 0 V
±100
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 8 A
V
DS
= 40 V, I
D
= 8 A
2.0
–
4.0
0.199
–
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
0.170
13
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
1630
70
2170
95
10
60
–
pF
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 100 V, V
GS
= 0 V,
f = 1 MHz
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
5
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
V
DS
= 380 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V to 480
V
,
V
GS
= 0 V
40
Effective Output Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
176
40.2
6.7
12.9
2.9
52.3
–
V
V
DS
= 380 V, I
D
= 8 A,
GS
= 10 V
(Note 4)
Q
gd
–
ESR
f = 1 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
15.8
15.5
60.3
20.2
41.6
41.0
ns
ns
ns
ns
V
DD
= 380 V, I
D
= 8 A,
V
GS
= 10 V, R
G
= 4.7
Ω
130.6
50.4
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
16
48
1.2
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 8 A
–
V
319
4.4
ns
μ
C
V
GS
= 0 V, I
SD
= 8 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I
= 5.3 A, R
= 25
Ω
, starting T
= 25
°
C.
AS
G
J
3. I
≤
16 A, di/dt
≤
200 A/
μ
s, V
= 380 V, starting T
= 25
°
C
SD
DD
J
4. Essentially independent of operating temperature typical characteristics.
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
10
1
10
150
o
C
25
o
C
-55
o
C
1
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
0.1
0.1
0.1
1
10
20
2
4
6
8
V
DS
, Drain-Source Voltage[V]
V
GS
, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.6
0.5
0.4
100
150
o
C
25
o
C
10
V
GS
= 10V
0.3
V
GS
= 20V
0.2
*Notes:
1. V
GS
= 0V
*Notes: T
C
= 25
o
C
40 50
2. 250
μ
s Pulse Test
0.1
1
0.2
0
10
20
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
7500
5000
2500
0
10
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
V
DS
= 120V
V
DS
= 380V
V
DS
= 480V
= C
+ C
ds gd
= C
gd
oss
rss
8
6
4
2
0
C
oss
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
iss
C
rss
*Notes: I
D
= 8A
40
0
10
20
30
50
0.1
1
10
100
600
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
0.5
2. I
D
= 1mA
2. I
D
= 8A
0.8
-100
0.0
-100
-50
0
50
100
150 200
-50
0
50
100
150
200
o
o
T
J
, Junction Temperature
[
C
]
T
J
, Junction Temperature
[
C
]
Figure 9. Maximum Safe Operating Area
for FCP16N60N
Figure 10. Maximum Safe Operating Area
for FCPF16N60NT
100
100
20
μ
s
20
μ
s
100
μ
s
100
μ
s
10
10
1ms
1ms
10ms
DC
10ms
DC
1
1
Operation in This Area
Operation in This Area
is Limited by R
DS(on)
is Limited by R
DS(on)
*Notes:
0.1
*Notes:
0.1
1. T
C
= 25
o
C
2. T
J
= 150
o
C
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
0.01
3. Single Pulse
0.01
1
10
100
1000
1
10
100
1000
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current
vs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
o
T
C
, Case Temperature
[
C
]
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
4
Typical Performance Characteristics
(Continued)
Figure 12. Transient Thermal Response Curve for FCP16N60N
2
1
0.5
0.2
P
DM
0.1
0.1
t
1
0.05
t
2
0.02
*Notes:
1. Z
θ
JC
(t) = 0.93
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.01
Single pulse
0.01
0.005
10
-5
10
-4
10
-3
10
-2
10
-1
1
t ,
Rectangular Pulse Duration [sec]
1
Figure 13. Transient Thermal Response Curve for FCPF16N60NT
5
0.5
1
0.2
0.1
P
DM
0.05
t
1
t
2
0.02
0.1
0.01
*Notes:
1. Z
θ
JC
(t) = 3.5
o
C/W Max.
Single pulse
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.01
10
-5
10
-4
10
-3
1
10
-2
la
10
-1
1
10
10
2
t
,
R
e
c
t
a
ng
u
r
P
u
l
s
e
Du
ra
t
i
o
n
[
s
e
c
]
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 15. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
6
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
7
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
8
Mechanical Dimensions
Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μ
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
10
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
