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2014
年
2
月
FCP190N60 / FCPF190N60
®
N
沟
道
SuperFET II
MOSFET
600 V, 20.2 A, 199 m
特性
•
说明
SuperFET
®
II MOSFET
是飞兆半导体新一代利用电荷平衡技术
实现出色低导通电阻和更低栅极电荷性能的高压超级结
(SJ)
MOSFET
系列产品
。
这
项技术专用于最小化导通损耗并提供卓越
的开关性能
、
dv/dt
额定值和更高雪崩能量。因此
，
SuperFET
MOSFET
非常适合开关电源应用
，
如
功率因数校
正
(PFC)
、
服
务
器
/
电信电源、平板电视电源
、
ATX
电源及工业电源应用。
650 V @ T
J
= 150°C
•
典型
值
R
DS(on)
= 170 m
•
超低栅极电
荷
（
典型
值
Q
g
= 57 nC)
•
低有效输出电
容
（
典型
值
C
oss(eff.)
= 160 pF)
•
100%
经过雪崩测试
•
符
合
RoHS
标准
应用
•
LCD / LED / PDP
电视照明
•
太阳能逆变器
AC-DC
电源
•
D
G
G
G
D
S
D
TO-220F
TO-220
S
S
绝对最大额定值
T
C
= 25°C
除非另有说明
。
FCP190N60 FCPF190N60
符号
V
DSS
参数
单位
600
±20
±30
V
漏极－源极电压
栅极－源极电压
– DC
– AC
V
GSS
I
D
V
A
(f > 1 Hz)
–
连
续
(T
C
= 25°C)
–
连
续
(T
C
= 100°C)
–
脉冲
20.2
12.7
60.6
20.2*
12.7*
60.6*
漏极电流
I
DM
E
AS
I
AR
（
注
1
）
（
注
2
）
（
注
1
）
（
注
1
）
A
mJ
A
漏极电流
400
4.0
2.1
100
20
单脉冲雪崩能量
雪崩电流
E
AR
mJ
重复雪崩能量
MOSFET dv/dt
二极管恢
复
dv/dt
峰值
dv/dt
P
D
V/ns
（
注
3
）
(T
C
= 25°C)
208
39
W
W/°C
°C
功耗
–
降低
至
25°C
以上
1.67
0.31
T
J
, T
STG
T
L
-55
至
+150
工作和存储温度范围
300
°C
用于焊接的最大引线温度，距离外
壳
1/8″
，持
续
5
秒
*
漏极电流受限于最大结温
热性能
FCP190N60 FCPF190N60
符号
参数
单位
R
JC
R
JA
0.6
3.2
结至外壳热阻最大值
结至环境热阻最大值
°C/W
62.5
62.5
1
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
不适用
带宽
数量
50
个
50
个
FCP190N60
FCP190N60
TO-220
不适用
不适用
FCPF190N60
FCPF190N60
TO-220F
塑料管
电气特
性
T
C
= 25°C
除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
600
650
–
–
–
–
BV
DSS
V
漏极－源极击穿电压
BV
DSS
/
T
J
BV
DS
I
DSS
I
GSS
击穿电压温度系数
I
D
=10 mA
，参考条件
为
25°C
–
0.67
–
V/°C
V
V
GS
= 0 V, I
D
= 20 A
–
–
–
–
700
–
1
漏
极
–
源极雪崩击穿电压
零栅极电压漏极电流
栅
极
–
体漏电流
V
DS
= 480 V, V
GS
= 0 V
–
–
–
A
V
DS
= 480 V, T
C
= 125°C
V
GS
= ±20 V, V
DS
= 0 V
10
±100
nA
导通特性
V
GS(th)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= 250
A
V
GS
= 10 V, I
D
= 10 A
V
DS
= 20
V
,
I
D
= 10 A
2.5
–
3.5
0.199
–
V
S
栅极阈值电压
–
–
0.17
21
漏极至源极静态导通电阻
正向跨导
动态特性
C
iss
–
–
–
–
–
–
–
–
–
2220
1630
85
2950
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
2165
输出电容
128
反向传输电容
输出电容
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
V
DS
= 380 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V to 480
V
,
V
GS
= 0 V
42
–
–
160
57
有效输出电容
10 V
的栅极电荷总量
栅
极
–
源极栅极电荷
栅
极
–
漏
极
“
米
勒
”
电荷
等效串联电阻
74
–
V
V
DS
= 380 V, I
D
= 10 A,
GS
= 10 V
9
（
注
4
）
Q
gd
21
–
ESR
f = 1 MHz
1
–
开关特性
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
20
10
64
5
50
30
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
V
DD
= 380 V, I
D
= 10 A,
V
GS
= 10 V, R
G
= 4.7
138
20
（
注
4
）
漏
极
–
源极二极管特性
I
S
–
–
–
–
–
–
–
20.2
60.6
1.2
–
A
A
漏
极
–
源极二极管最大正向连续电流
漏
极
–
源极二极管最大正向脉冲电流
漏
极
–
源极二极管正向电压
反向恢复时间
I
SM
V
SD
t
rr
V
GS
= 0 V, I
SD
= 10 A
–
V
280
3.8
ns
C
V
GS
= 0 V, I
SD
= 10 A,
dI
F
/dt = 100 A/
s
Q
rr
–
反向恢复电荷
注意：
1.
重复额定值：脉冲宽度受限于最大结温。
2. I
= 4 A
，
V =
50 V
，
R =
25
，启
动
T =
25°C
。
AS
DD
G
J
3. I
10 A
，
di/dt
200 A/
s
，
V
BV
，启
动
T =
25°C
。
SD
DD
DSS
J
4.
本质上独立于工作温度的典型特性。
2
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
典型性能特征
图
1.
通态区域特性
图
2.
传递特性
50
100
V
GS
= 15.0V
*Notes:
1. V
DS
= 20V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
2. 250
s Pulse Test
150
o
C
10
10
25
o
C
-55
o
C
1
*Notes:
1. 250
s Pulse Test
2. T
C
= 25
o
C
0.3
0.1
1
1
10
2
3
4
5
6
7
8
V
DS
, Drain to Source Voltage[V]
V
GS
, Gate to Source Voltage[V]
图
3.
导通电阻变化与漏极电流和栅极电压
图
4
.
体二极管正向电压变化与源极电流和温度
0.5
100
0.4
150
o
C
25
o
C
10
0.3
V
GS
= 10V
0.2
V
GS
= 20V
*Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
40
2. 250
s Pulse Test
1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
50
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
图
5.
电容特性
图
6.
栅极电荷特性
10000
10
C
iss
V
DS
= 120V
8
6
4
2
0
V
DS
= 300V
V
DS
= 480V
1000
C
oss
100
*Note:
1. V
GS
= 0V
10
2. f = 1MHz
C
rss
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
iss
= C
+ C
ds
oss
rss
gd
1
= C
gd
*Note: I
D
= 10A
40
0.5
0.1
1
10
100
600
0
20
60
Q
g
, Total Gate Charge [nC]
V
DS
, Drain to Source Voltage [V]
3
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
典型性能特
征
（接上页）
图
7.
击穿电压变化与温度的关系
图
8.
导通电阻变化与温度的关系
1.2
3.0
2.5
2.0
1.5
1.0
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
0.5
2. I
D
= 10mA
2. I
D
= 10A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
图
9.
最大安全工作
区
(FCP190N60)
图
10.
最大安全操作
区
(FCPF190N60)
100
100
10
s
10
s
100
s
1ms
10ms
DC
100
s
1ms
10ms
10
1
10
1
DC
Operation in This Area
is Limited by R
DS(on)
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
0.1
0.01
0.1
0.01
3. Single Pulse
3. Single Pulse
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, Drain to Source Voltage [V]
V
DS
, Drain to Source Voltage [V]
图
11.
最大漏极电流与壳体温度的关系
图
12. Eoss
与漏极－源极电压的关系
25
10
20
15
10
5
8
6
4
2
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T
C
, Case Temperature
[
o
C
]
V
DS
, Drain to Source Voltage
[
V
]
4
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
典型性能特
征
（接上页）
图
13.
瞬态热响应曲
线
(FCP190N60)
1
0.5
0.2
P
DM
0.1
0.1
t
1
t
2
0.05
*Notes:
0.02
1. Z
JC
(t) = 0.6
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
JC
(t)
0.01
Single pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
1
，
矩
形脉冲持续时
间
[
秒
]
图
14.
瞬态热响应曲
线
(FCPF190N60)
5
1
0.5
0.2
0.1
P
DM
0.05
t
1
t
2
0.1
0.02
0.01
*Notes:
1. Z
JC
(t) = 3.2
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
JC
(t)
Single pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
100
t
1
，
矩
形脉冲持续时
间
[
秒
]
5
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
I
=
常量
G
图
15.
栅极电荷测试电路与波形
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
图
16.
阻性开关测试电路与波形
V
GS
图
17.
非箝位感性开关测试电路与波形
6
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
图
18.
二极管恢
复
dv/dt
峰值测试电路与波形
7
© 2012
飞兆半导体公司
FCP190N60 / FCPF190N60 Rev. C16
SUPPLIER “B” PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER “A” PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE “D”
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
“A1”
8.65
7.59
1.00
0.55
SEE NOTE “F”
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE “I”
BOTTOM VIEW
NOTES:
A) REFERENCE
JEDEC, TO-220, VARIATION AB
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [
].
D) LOCATION
OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES
NOT COMPLY JEDEC STANDARD VALUE.
F) “A1” DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 – 0.61
DUAL GAUGE
= 1.10 – 1.45
G) DRAWING
FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER
DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE “F”
SEE NOTE “F”
6.88
6.48
1 X
4
5°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 – WITH SUPPORT PIN HOLE.
OPTION 2 – NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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