onsemi-FCP290N80

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December 2015  

FCP290N80  

N-Channel SuperFET

 

II MOSFET  

800 V, 17 A, 0.29



 

®

Features  

Description  

®

•

•

•

•

•

•

Typ. R  

= 0.245



 

SuperFET II

 

MOSFET is Fairchild Semiconductor’s brand-new  

high voltage super-junction (SJ) MOSFET family that is utilizing  

charge balance technology for outstanding low on-resistance  

and lower gate charge performance. This technology is tailored  

to minimize conduction loss, provide superior switching perfor-  

mance, dv/dt rate and higher avalanche energy. Consequently,  

SuperFET II MOSFET is very suitable for the switching power  

applications such as PFC, server/telecom power, FPD TV  

power, ATX power and industrial power applications.  

DS(on)  

Ultra Low Gate Charge (Typ. Q

 

= 58 nC)  

g

Low E  

(Typ. 5.6 uJ @ 400 V)  

oss  

Low Effective Output Capacitance (Typ. C  

100% Avalanche Tested  

= 240 pF)  

oss(eff.)  

RoHS Compliant  

Applications  

•

AC-DC Power Supply  

•

LED Lighting  

D

G

G

D

S

TO-220  

S

o

Absolute Maximum Ratings

T =

 

25 C

 

unless otherwise noted.  

C

Symbol  

Parameter  

FCP290N80  

800  

Unit  

V

V

Drain to Source Voltage  

Gate to Source Voltage  

V

DSS  

– DC  

– AC  

±20  

V

A

GSS  

(f >1 Hz)  

±30  

o

– Continuous (T

 

= 25 C)  

17  

C

I

I

Drain Current  

D

o

– Continuous (T

 

= 100 C)  

10.8  

42  

C

Drain Current  

– Pulsed  

(Note 1)  

A

mJ  

A

DM  

E

Single Pulsed Avalanche Energy  

Avalanche Current  

(Note 2)  

(Note 1)  

(Note 1)  

882  

AS  

I

3.4  

AR  

E

Repetitive Avalanche Energy  

MOSFET dv/dt  

2.12  

100  

mJ  

AR  

dv/dt  

V/ns  

W

Peak Diode Recovery dv/dt  

(Note 3)  

20  

o

(T =

 

25 C)  

212  

C

P

Power Dissipation  

D

o

o

– Derate Above 25

 

C  

1.7  

W/ C  

o

T , T  

Operating and Storage Temperature Range  

-55 to +150  

C

J

STG  

Maximum Lead Temperature for Soldering,  

1/8” from Case for 5 Seconds  

o

T

300  

C

L

Thermal Characteristics  

Symbol  

Parameter  

Unit  

FCP290N80  

0.59  

R

R

Thermal Resistance, Junction to Case, Max.  

Thermal Resistance, Junction to Ambient, Max.  



JC  

o

C/W  

62.5  



JA  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

1

Package Marking and Ordering Information  

Part Number  

Top Mark  

Package  

Packing Method  

Reel Size  

Tape Width  

Quantity  

FCP290N80  

FCP290N80  

TO-220  

Tube  

N/A  

N/A  

50 units  

o

Electrical Characteristics

T =

 

25 C

 

unless otherwise noted.  

C

Symbol  

Parameter  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

Off Characteristics  

BV  

Drain to Source Breakdown Voltage  

V

= 0 V, I

 

= 1 mA, T

 

= 25



C  

800  

–

–

–

–

V

DSS  

GS  

D

J



BV  

/



T  

Breakdown Voltage Temperature  

Coefficient  

o

o

DSS  

I

= 1 mA, Referenced to 25 C  

0.8  

V/ C  

D

J

V

V

V

= 800 V, V

 

= 0 V  

–

–

–

–

25  

DS  

DS  

GS  

GS  

I

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  



A  

DSS  

GSS  

o

= 640 V, T

 

= 125

 

C  

–

250  

C

I

= ±20 V, V

 

= 0 V  

–

ꢀ

 

±100  

nA  

DS  

On Characteristics  

V

Gate Threshold Voltage  

V

V

V

= V

 

, I

 

= 1.7 mA  

2.5  

–

ꢀ  

–

–

4.5  

0.290  

–

V



S

GS(th)  

GS  

GS  

DS  

DS  

D

R

g

Static Drain to Source On Resistance  

Forward Transconductance  

= 10 V, I

 

= 8.5 A  

0.245  

20  

DS(on)  

D

= 20 V, I

 

= 8.5 A  

D

FS  

Dynamic Characteristics  

C

C

C

C

C

Input Capacitance  

–

–

–

–

–

–

–

–

–

2410  

75  

3205  

pF  

pF  

pF  

pF  

pF  

nC  

nC  

nC  



iss  

V

= 100 V, V

 

= 0 V,  

GS  

DS  

Output Capacitance  

100  

oss  

f = 1 MHz  

Reverse Transfer Capacitance  

Output Capacitance  

0.36  

35  

–

–

rss  

V

V

= 480 V, V

 

= 0 V, f = 1 MHz  

GS  

oss  

DS  

DS  

Effective Output Capacitance  

Total Gate Charge at 10V  

Gate to Source Gate Charge  

Gate to Drain “Miller” Charge  

Equivalent Series Resistance  

= 0 V to 480 V, V

 

= 0 V  

240  

58  

–

oss(eff.)  

GS  

Q

Q

Q

75  

–

g(tot)  

gs  

V

V

= 640 V, I

 

= 17 A,  

DS  

GS  

D

= 10 V  

11  

(Note 4)  

22  

–

gd  

ESR  

f = 1 MHz  

0.75  

–

Switching Characteristics  

t

t

t

t

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

–

–

–

–

22  

14  

61  

2.6  

54  

38  

ns  

ns  

ns  

ns  

d(on)  

V

V

= 400 V, I

 

= 17 A,  

DD  

GS  

D

r

= 10 V, R

 

= 4.7

  

g

132  

15  

d(off)  

f

(Note 4)  

Drain-Source Diode Characteristics  

I

I

Maximum Continuous Drain to Source Diode Forward Current  

Maximum Pulsed Drain to Source Diode Forward Current  

–

–

–

–

–

–

–

17  

42  

1.2  

–

A

A

S

SM  

V

t

Drain to Source Diode Forward Voltage  

Reverse Recovery Time  

V

= 0 V, I

 

= 17 A  

–

V

SD  

GS  

SD  

511  

12  

ns  



C  

V

= 0 V, I

 

= 17 A,  

rr  

GS  

SD  

dI /dt

 

= 100 A/



s  

Q

Reverse Recovery Charge  

–

F

rr  

Notes:  

1. Repetitive rating: pulse-width limited by maximum junction temperature.  

2. I

 

= 3.4 A, V

 

= 50 V, R

 

= 25



, starting T

 

= 25



C.  

AS  

DD  

G

J

3. I

 



17 A, di/dt



200 A/



s, V

 



BV  

, starting T

 

= 25



C.  

SD  

DD  

DSS  

J

4. Essentially independent of operating temperature typical characteristics.  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

2

Typical Performance Characteristics  

Figure 1. On-Region Characteristics  

Figure 2. Transfer Characteristics  

Figure 3. On-Resistance Variation vs.  

Drain Current and Gate Voltage  

Figure 4. Body Diode Forward Voltage  

Variation vs. Source Current  

and Temperature  

Figure 5. Capacitance Characteristics  

Figure 6. Gate Charge Characteristics  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

3

Preliminary  

Typical Performance Characteristics

(Continued)  

Figure 7. Breakdown Voltage Variation  

vs. Temperature  

Figure 8. On-Resistance Variation  

vs. Temperature  

Figure 9. Maximum Safe Operating Area  

Figure 10.

 

Maximum Drain Current  

vs. Case Temperature  

Figure 11. Eoss vs. Drain to Source Voltage  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

4

Typical Performance Characteristics

(Continued)  

Figure 12. Transient Thermal Response Curve  

P

P

D

D

M

M  

t

t

1  

t

2

2  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

5

I

G

= const.  

Figure 13. Gate Charge Test Circuit & Waveform  

V

GS  

Figure 14. Resistive Switching Test Circuit & Waveforms  

V

GS  

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

6

Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms  

©2015 Fairchild Semiconductor Corporation  

FCP290N80 Rev. 1.0  

7

SUPPLIER “B” PACKAGE  

SHAPE  

‘ꢀꢁꢂꢂ  

3.50  

10.67  

9.65  

SUPPLIER “A” PACKAGE  

SHAPE  

E

3.40  

2.50  

16.30  

13.90  

IF PRESENT, SEE NOTE “D”  

E

16.51  

15.42  

9.40  

8.13  

E

1

2

3

4.10  

2.70  

[2.46]  

C

14.04  

12.70  

2.13  

2.06  

FRONT VIEWS  

H

4.70  

4.00  

1.62  

1.42  

1.62  

1.10  

2.67  

2.40  

“A1”  

8.65  

7.59  

1.00  

0.55  

SEE NOTE “F”  

ꢃƒ  

ꢄƒ  

ꢃƒ  

ꢄƒ  

6.69  

6.06  

OPTIONAL  

CHAMFER  

E

14.30  

11.50  

NOTE “I”  

BOTTOM VIEW  

NOTES:  

A) REFERENCE

 

JEDEC, TO-220, VARIATION AB  

B) ALL

 

DIMENSIONS ARE IN MILLIMETERS.  

C) DIMENSIONS

 

COMMON TO ALL PACKAGE  

SUPPLIERS EXCEPT WHERE NOTED [

 

].  

D) LOCATION

 

OF MOLDED FEATURE MAY VARY  

(LOWER LEFT CORNER, LOWER CENTER  

AND CENTER OF THE PACKAGE)  

3

2

1

E DOES

 

NOT COMPLY JEDEC STANDARD VALUE.  

F) “A1” DIMENSIONS AS BELOW:  

SINGLE GAUGE = 0.51 – 0.61  

DUAL GAUGE

 

= 1.10 – 1.45  

G) DRAWING

 

FILE NAME: TO220B03REV9  

H

PRESENCE IS SUPPLIER DEPENDENT  

I) SUPPLIER

 

DEPENDENT MOLD LOCKING HOLES  

IN HEATSINK.  

0.60  

0.36  

2.85  

2.10  

BACK VIEW  

SIDE VIEW  

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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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