onsemi-FCP9N60N
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November 2013
FCP9N60N / FCPF9N60NT
®
N-Channel SupreMOS
MOSFET
600 V, 9 A, 385 m
Ω
Features
Description
•
•
•
•
•
R
DS(on)
= 330 m
Ω
(Typ.) @ V
GS
= 10
V
,
I
D
= 4.5 A
Ultra Low Gate Charge (Typ. Q
g
= 22 nC)
Low Effective Output Capacitance (Typ. C
oss(eff.)
= 106 pF)
100% Avalanche Tested
The SupreMOS
®
MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFE
T
s
. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
RoHS Compliant
Application
•
•
•
•
LCD/LED/PDP TV
Lighting
Solar Inverter
AC-DC Power Supply
D
G
G
D
S
G
D
TO-220F
TO-220
S
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
Parameter
FCP9N60N
FCPF9N60NT
Unit
V
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
9.0
5.7
27
9.0*
5.7*
27*
I
D
Drain Current
A
I
DM
E
AS
I
AR
Drain Current
– Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
135
3
E
AR
Repetitive Avalanche Energy
MOSFET dv/dt
0.83
100
20
mJ
V/ns
V/ns
W
W/
o
C
o
C
dv/dt
P
D
Peak Diode Recovery dv/dt
(Note 3)
(T
C
= 25
o
C)
– Derate Above 25
o
C
83.3
0.67
29.8
0.24
Power Dissipation
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
FCP9N60N
1.5
FCPF9N60NT
Unit
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
4.2
o
C/W
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
1
Package Marking and Ordering Information
Part Number
FCP9N60N
Top Mark
FCP9N60N
FCPF9N60NT
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
FCPF9N60NT
TO-220F
Tube
N/A
N/A
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0 V, T
C
= 25
o
C
D
= 1 mA, Referenced to 25
o
C
DS
= 480 V, V
GS
= 0 V
600
–
–
–
–
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.72
V/
o
C
V
–
–
–
–
–
–
10
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
V
DS
= 480 V, V
GS
= 0 V, T
C
= 125
o
C
100
V
GS
= ±30 V, V
DS
= 0 V
±100
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 4.5 A
V
DS
= 40 V, I
D
= 4.5 A
2.0
–
4.0
0.385
–
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
0.33
7.5
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
930
35
1240
pF
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 100 V, V
GS
= 0 V,
f = 1 MHz
C
oss
C
rss
Output Capacitance
50
4
–
Reverse Transfer Capacitance
Output Capacitance
2
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
V
DS
= 380 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V to 480
V
,
V
GS
= 0 V
20
Effective Output Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
106
22.0
4.1
7.1
2.9
–
29
–
V
V
DS
= 380 V, I
D
= 4.5 A,
GS
= 10 V
(Note 4)
Q
gd
–
ESR
f = 1 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
12.7
8.7
35.4
27.4
83.8
30.4
ns
ns
ns
ns
V
DD
= 380 V, I
D
= 4.5 A,
V
GS
= 10 V, R
G
= 4.7
Ω
36.9
10.2
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
9.0
27
1.2
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 4.5 A
–
V
213
2.2
ns
μ
C
V
GS
= 0 V, I
SD
= 4.5 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I
= 3 A, R
= 25
Ω
, starting T
= 25
°
C.
AS
G
J
3. I
≤
9 A, di/dt
≤
200 A/
μ
s, V
= 380 V, starting T
= 25
°
C.
SD
DD
J
4. Essentially independent of operating temperature typical characteristics.
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
60
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
10
10
1
6.0 V
5.5 V
5.0 V
150
o
C
25
o
C
-55
o
C
1
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
0.1
0.1
0.1
1
10
20
2
4
6
8
V
DS
, Drain-Source Voltage[V]
V
GS
, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.2
1.0
0.8
100
150
o
C
25
o
C
10
V
GS
= 10V
0.6
V
GS
= 20V
0.4
*Notes:
1. V
GS
= 0V
*Notes: T
C
= 25
o
C
20 25
2. 250
μ
s Pulse Test
0.2
1
0.4
0
5
10
15
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
10
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
= C
+ C
ds gd
oss
rss
= C
gd
4000
3000
2000
1000
0
8
6
4
2
0
C
oss
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
iss
C
rss
*Notes: I
D
= 4.5A
20
0
5
10
15
25
0.1
1
10
100
600
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.9
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
0.5
2. I
D
= 1mA
2. I
D
= 4.5A
0.8
-100
0.0
-100
-50
0
50
100
150 200
-50
0
50
100
150
200
o
o
T
J
, Junction Temperature
[
C
]
T
J
, Junction Temperature
[
C
]
Figure 9. Maximum Safe Operating Area
for FCPF9N60N
Figure 10. Maximum Safe Operating Area
for FCPF9N60NT
50
100
10
μ
s
10
μ
s
10
1
100
μ
s
1ms
10ms
100
μ
s
1ms
10
1
DC
10ms
Operation in This Area
is Limited by R
DS(on)
Operation in This Area
is Limited by R
DS(on)
DC
0.1
0.01
*Notes:
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
0.1
0.01
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
3. Single Pulse
1
10
100
1000
1
10
100
1000
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
25
50
75
100
125
150
o
T
C
, Case Temperature
[
C
]
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
4
Typical Performance Characteristics
(Continued)
Figure 12. Transient Thermal Response Curve for FCP9N60N
2
1
0.5
0.2
0.1
P
DM
0.05
0.1
t
1
0.02
0.01
t
2
*Notes:
Single pulse
1. Z
θ
JC
(t) = 1.5
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.01
0.005
10
-5
10
-4
10
-3
10
-2
10
-1
1
t ,
Rectangular Pulse Duration [sec]
1
Figure 13. Transient Thermal Response Curve for FCPF9N60NT
5
0.5
1
0.2
0.1
P
DM
0.05
t
1
0.1
0.02
t
2
*Notes:
0.01
1. Z
θ
JC
(t) = 4.2
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
Single pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t ,
Rectangular Pulse Duration [sec]
1
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 15. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
6
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
7
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
8
Mechanical Dimensions
Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μ
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
10
