onsemi-FCPF067N65S3
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FCPF067N65S3
MOSFET
– Powe
r
,
N
-Channel,
SUPERFET III, Easy Drive
650
V
,
4
4 A, 67 m
W
Description
SUPERFET III MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
67 m
W
@ 10 V
44 A
D
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
•
700 V @ T
= 150
°
C
G
J
•
Typ. R
= 59 m
W
DS(on)
•
Ultra Low Gate Charge (Typ. Q
= 78 nC)
g
S
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
= 715 pF)
oss(eff.)
POWER MOSFET
•
These Devices are Pb
−
Free and are RoHS Compliant
Applications
•
Computing / Display Power Supplies
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
G
D
S
TO
−
220F
CASE 221AT
•
Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCPF
067N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
FCPF067N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019
−
Rev. 3
FCPF067N65S3/D
FCPF067N65S3
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
C
Symbol
Parameter
FCPF067N65S3
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
650
30
−
DC
V
−
AC (f > 1 Hz)
30
I
D
Drain Current
−
Continuous (T
= 25
°
C)
44*
A
C
−
Continuous (T
= 100
°
C)
28*
C
I
Drain Current
−
Pulsed (Note 1)
110*
214
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
AS
AS
I
4.8
E
0.46
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T =
25
°
C)
46
W
W/
°
C
°
C
D
C
−
Derate Above 25
°
C
0.37
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature
.
1. Repetitive
rating: pulse width limited by maximum junction temperature.
2. I
= 4.8 A, R
= 25
W
, starting T
= 25
°
C.
AS
G
J
3. I
≤
22 A, di/dt
≤
200 A/
m
s, V
≤
380
V
,
s
tarting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
FCPF067N65S3
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.7
_
C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
N/A
Tape Width
N/A
Quantity
FCPF067N65S3
FCPF067N65S3
TO
−
220F
Tube
50 Units
2
FCPF067N65S3
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0
V
, I
= 1 mA, T
= 25
_
C
DSS
GS
D
J
= 0
V
, I
= 1 mA, T
= 150
_
C
GS
D
J
D
BV
/
D
T
Breakdown Voltage
T
e
mperature
Coefficient
= 1 mA, Referenced to 25
_
C
0.72
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650
V
, V
= 0 V
−
−
−
−
2.2
−
1
m
A
DSS
GS
= 520
V
, T
=
1
25
_
C
−
C
I
Gate to Body Leakage Current
=
30
V
, V
= 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 0.99 mA
2.5
−
−
4.5
67
−
V
m
W
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
=
2
2 A
59
29
D
g
FS
= 20
V
, I
=
2
2 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
3090
68
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V
= 0 V
715
104
78
oss(eff.)
GS
C
= 0 V to 400 V, V
= 0 V
GS
oss(er.)
Q
= 400
V
, I
=
2
2 A, V
= 10 V
D GS
g(tot)
(Note 4)
Q
18
gs
Q
30
gd
ESR
f = 1 MHz
0.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400
V
, I
=
2
2 A, V
= 10
V
,
−
−
−
−
26
52
89
16
−
−
−
−
ns
ns
ns
ns
d(on)
DD
g
D
GS
R =
4.7
W
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
44
110
1.2
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= 22
A
−
V
GS
SD
t
rr
= 0
V
, I
= 22
A,
435
9.2
ns
m
C
GS
SD
dI /dt
= 100 A/
m
s
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature typical characteristics.
3
FCPF067N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
V
GS
=
1
0.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
= 20 V
DS
100
250
m
s Pulse
T
e
st
100
10
1
150
°
C
10
1
25
°
C
−
55
°
C
250
m
s Pulse
T
e
st
= 25
°
C
T
C
0.3
1
10
20
2
3
GS
4
5
6
7
V
DS
, Drain
−
Source Voltage (V)
V
, Gate
−
Source Voltage (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.25
0.20
200
100
V
= 0 V
T
C
= 25
°
C
GS
250
m
s Pulse
T
e
st
10
1
0.15
0.10
0.05
150
°
C
25
°
C
V
GS
= 10 V
V
GS
= 20 V
−
55
°
C
0.1
0.00
0.0
0.3
0.6
0.9
1.2
1.5
0
30
60
90
120
V
SD
, Body Diode Forward Voltage (V)
I ,
Drain Current (A)
D
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On
−
Resistance Variation vs.
Drain Current and Gate Voltage
100000
10000
1000
100
10
8
I
D
= 22 A
C
iss
V
DS
= 130 V
V
DS
= 400 V
6
C
oss
4
V
GS
= 0 V
10
f = 1 MHz
C
rss
2
C
C
C
= C
+ C
(C =
shorted)
iss
gs
gd
ds
1
= C
+ C
oss
rss
ds
gd
= C
gd
0.1
0
0.1
1
10
100
1000
0
20
g
40
60
80
100
Q ,
Total Gate Charge (nC)
V
DS
, Drain
−
Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FCPF067N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1.2
1.1
1.0
0.9
0.8
3.0
V
I
= 0 V
= 1 mA
V
I
= 10 V
= 22 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.5
0.0
−
50
50
100
150
0
−
50
0
50
100
150
T ,
Junction Temperature (
5
C)
J
T ,
Junction Temperature (
5
C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On
−
Resistance Variation
vs. Temperature
200
100
50
40
10
m
s
100
m
s
1 ms
10
1
10 ms
DC
30
20
10
0
Operation in this Area
is Limited by R
DS(on)
0.1
T
C
= 25
°
C
T =
150
°
C
J
Single Pulse
0.01
150
1
10
100
1000
25
50
75
100
125
T ,
Case Temperature (
5
C)
V
DS
, Drain
−
Source Voltage (V)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
16
12
8
4
0
0
100 200 300 400 500 600
650
, Drain to Source Voltage (V)
V
DS
Figure 11. E
OSS
vs. Drain to Source Voltage
5
FCPF067N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Z
R
(t) = r(t) x R
q
q
JC
JC
1E
−
3
1E
−
4
= 2.7
°
C/W
q
JC
Peak T
= P
Duty Cycle, D = t
/ t
x Z
(t) + T
q
JC C
J
DM
SINGLE PULSE
10
−
4
1
2
10
−
5
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
6
FCPF067N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
@
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
FCPF067N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
−
dv/dt controlled by R
G
−
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220 Fullpack, 3
−
Lead / TO
−
220F
−
3SG
CASE 221AT
ISSUE B
DATE 19 JAN 2021
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67439E
TO
−
220 FULLPACK, 3
−
LEAD / TO
−
220F
−
3SG
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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©
Semiconductor Components Industries, LLC, 2019
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